| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
|---|
| 07/15/1997 | US5648294 Layers of aluminum gallium arsenide, gallium arsenide and indium gallium arsenide etched with boron trichloride |
| 07/15/1997 | US5648288 Threshold adjustment in field effect semiconductor devices |
| 07/15/1997 | US5648286 Method of making asymmetrical transistor with lightly doped drain region, heavily doped source and drain regions, and ultra-heavily doped source region |
| 07/15/1997 | US5648285 Method for manufacturing semiconductor nonvolatile memory device with field insulating layer |
| 07/15/1997 | US5648284 Field effect transistor including silicon oxide film and nitrided oxide film as gate insulator film and manufacturing method thereof |
| 07/15/1997 | US5648283 High density power device fabrication process using undercut oxide sidewalls |
| 07/15/1997 | US5648282 Semiconductors |
| 07/15/1997 | US5648281 Method for forming an isolation structure and a bipolar transistor on a semiconductor substrate |
| 07/15/1997 | US5648280 Method for fabricating a bipolar transistor with a base layer having an extremely low resistance |
| 07/15/1997 | US5648278 Forming islands that do not cross boundaries |
| 07/15/1997 | US5648277 Performing ion introduction for forming impurity regions using the gate electrode and extensions of gate insulating film as mask; varying conditions of introduction in order to control concentration |
| 07/15/1997 | US5648276 Method and apparatus for fabricating a thin film semiconductor device |
| 07/15/1997 | US5648146 Multilayer |
| 07/15/1997 | US5648114 Chemical vapor deposition process for fabricating layered superlattice materials |
| 07/10/1997 | WO1997024795A1 Active rectifier having minimal energy losses |
| 07/10/1997 | WO1997024769A1 Method and device for the deposit of at least one film of intrinsic microcrystalline or nanocrystalline hydrogenated silicon and photovoltaic cell obtained by this method |
| 07/10/1997 | WO1997024766A1 Use of oblique implantation in forming emitter of bipolar transistor |
| 07/10/1997 | WO1997024762A1 Rectifier diode |
| 07/10/1997 | WO1997024758A1 Microwave power soi-mosfet with high conductivity metal gate |
| 07/10/1997 | WO1997024757A1 A method of manufacturing a self-aligned vertical bipolar transistor on an soi |
| 07/10/1997 | WO1997024756A1 Method for manufacturing a microwave vertical bipolar transistor on an soi with buried base metal conductor |
| 07/10/1997 | WO1997024753A1 Thin-film transistor and method for the deposit of at least one semiconductor film for its manufacture |
| 07/10/1997 | WO1997024752A2 A METHOD OF MANUFACTURING A HIGH VOLTAGE GaN-AlN BASED SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MADE |
| 07/10/1997 | DE19620641C1 Bidirectional horizontal charge transfer device for image sensor |
| 07/10/1997 | CA2241271A1 Active rectifier having minimal energy losses |
| 07/09/1997 | EP0783181A1 Electrically programmable memory cell arrangement and process for making the same |
| 07/09/1997 | EP0783180A1 Electrically programmable memory cell arrangement and process for making the same |
| 07/09/1997 | EP0783108A1 Micromechanical element with planarized cover over a cavity and method of fabrication |
| 07/09/1997 | EP0782770A1 Self-aligned field-effect transistor for high frequency applications |
| 07/09/1997 | EP0782769A1 Controllable semiconductor component |
| 07/09/1997 | CN1154001A Process of fabricating semiconductor device having non-single crystal thin film transistor free from residual hydrogen left therein during hydrogen treatment stage |
| 07/09/1997 | CN1153915A Manufacturing method of display device |
| 07/08/1997 | US5646888 Semiconductor device having isolating regions |
| 07/08/1997 | US5646559 Single-electron tunnelling logic device |
| 07/08/1997 | US5646435 Method for fabricating CMOS field effect transistors having sub-quarter micrometer channel lengths with improved short channel effect characteristics |
| 07/08/1997 | US5646433 Pad protection diode structure |
| 07/08/1997 | US5646432 Semiconductor thin film formed on a supporting substrate |
| 07/08/1997 | US5646431 Surface breakdown reduction by counter-doped island in power mosfet |
| 07/08/1997 | US5646430 Non-volatile memory cell having lightly-doped source region |
| 07/08/1997 | US5646428 Output circuit provided with source follower circuit having depletion type MOS transistor |
| 07/08/1997 | US5646424 Transistor device employing crystallization catalyst |
| 07/08/1997 | US5646420 Single electron transistor using protein |
| 07/08/1997 | US5646418 Quantum effect switching device |
| 07/08/1997 | US5646070 Hydrosilation |
| 07/08/1997 | US5646069 Alloying a deposited metal alloy multilayer |
| 07/08/1997 | US5646060 Method for making an EEPROM cell with isolation transistor |
| 07/08/1997 | US5646058 Method for fabricating a self-aligned double-gate MOSFET by selective lateral epitaxy |
| 07/08/1997 | US5646056 Method of fabricating ultra-large-scale integration metal-oxide semiconductor field effect transistor |
| 07/08/1997 | US5646055 Method for making bipolar transistor |
| 07/08/1997 | US5646054 Method for manufacturing MOS transistor of high breakdown voltage |
| 07/08/1997 | US5645684 Microelectromechanical systems, electronic circuits and mechanical devices integrated on the same chip |
| 07/03/1997 | WO1997023911A1 Current-limiting semiconductor arrangement |
| 07/03/1997 | WO1997023910A1 Silicon bipolar junction transistor having reduced emitter line width |
| 07/03/1997 | WO1997023908A1 Bicmos semiconductor device comprising a silicon body with locos and oxide filled groove regions for insulation |
| 07/03/1997 | WO1997023905A2 Method of producing a neuron mos transistor on the basis of a cmos process |
| 07/03/1997 | WO1997023902A2 Process for producing an mos transistor |
| 07/03/1997 | WO1997023901A1 Method of manufacturing a resurf semiconductor device, and a semiconductor device manufactured by such a method |
| 07/03/1997 | WO1997023900A1 Method of manufacturing a semiconductor device with a pn junction provided through epitaxy |
| 07/03/1997 | WO1997020350A3 Semiconductor device with schottky contact and a process for the production thereof |
| 07/03/1997 | DE19654753A1 MOSFET manufacturing method |
| 07/03/1997 | DE19654738A1 Semiconductor memory manufacturing method for e.g. DRAM |
| 07/03/1997 | DE19654697A1 Substrat mit Silicium auf einem Isolator und Verfahren zu dessen Herstellung With silicon on insulator substrate and process for its preparation |
| 07/03/1997 | DE19654692A1 Semiconductor power device, e.g. insulated gate bipolar transistor |
| 07/03/1997 | DE19654561A1 Speicherzellenfeld Memory cell array |
| 07/03/1997 | DE19654280A1 Halbleitereinrichtung und Verfahren zu deren Herstellung Semiconductor device and process for their preparation |
| 07/03/1997 | DE19653656A1 Halbleitereinrichtung und Verfahren zu deren Herstellung Semiconductor device and process for their preparation |
| 07/03/1997 | DE19653493A1 Titanium silicide interconnection manufacturing method for semiconductor MOS transistor |
| 07/03/1997 | DE19651605A1 Epitaxial pinch-effect resistor manufacturing method using dopant implantation |
| 07/03/1997 | DE19629894A1 MOSFET manufacturing method |
| 07/03/1997 | DE19618731A1 Semiconductor component manufacturing method for lightly doped drain MOSFET |
| 07/03/1997 | DE19617632A1 Non-volatile memory cell device, e.g. ROM cell |
| 07/03/1997 | DE19549202A1 Gleichrichterdiode Rectifier diode |
| 07/02/1997 | EP0782201A1 MOS-technology power device integrated structure |
| 07/02/1997 | EP0782200A2 A silicon controlled rectifier built in polysilicon |
| 07/02/1997 | EP0782199A2 High voltage semiconductor device and method for manufacturing the same |
| 07/02/1997 | EP0782198A2 High-voltage bipolar transistor utilizing field-terminated bond-pad electrodes |
| 07/02/1997 | EP0782194A2 A high voltage breakdown isolation semiconductor device and manufacturing process for making the device |
| 07/02/1997 | EP0782183A2 Methods of fabrication of submicron features in semiconductor devices |
| 07/02/1997 | EP0782182A2 MOS transistor and manufacturing method of the same |
| 07/02/1997 | EP0782181A2 Method of manufacturing VDMOS with a termination structure |
| 07/02/1997 | EP0782178A1 Solid phase epitaxial crystallization of amorphous silicon films on insulating substrates |
| 07/02/1997 | EP0782040A2 Method for manufacturing liquid crystal display |
| 07/02/1997 | EP0782035A1 Method of forming array of light active cells and array |
| 07/02/1997 | EP0781736A2 Ferroelectric thin film, substrate provided with ferroelectric thin film, device having capacitor structure and method for manufacturing ferroelectric thin film |
| 07/02/1997 | EP0781727A1 Clathrate compounds and processes for production thereof |
| 07/02/1997 | CN1153399A Method for fabricating semiconductor device with planarization step using CMP |
| 07/02/1997 | CN1153313A Liquid crystal display device and method of fabricating the same |
| 07/02/1997 | CN1035350C Generator motor for vehicles |
| 07/01/1997 | US5644533 Flash memory system, and methods of constructing and utilizing same |
| 07/01/1997 | US5644532 Method for programming a cell in a source-coupling, split-gate, virtual ground flash EEPROM array |
| 07/01/1997 | US5644528 Non-volatile memory having a cell applying to multi-bit data by multi-layered floating gate architecture and programming method for the same |
| 07/01/1997 | US5644157 High withstand voltage type semiconductor device having an isolation region |
| 07/01/1997 | US5644156 Porous silicon photo-device capable of photoelectric conversion |
| 07/01/1997 | US5644155 Structure and fabrication of high capacitance insulated-gate field effect transistor |
| 07/01/1997 | US5644152 Conductive germanium/silicon member with a roughened surface thereon suitable for use in an integrated circuit structure |
| 07/01/1997 | US5644150 Insulated gate thyristor |
| 07/01/1997 | US5644149 Anode-side short structure for asymmetric thyristors |
| 07/01/1997 | US5644148 Power transistor device having ultra deep increased concentration region |
| 07/01/1997 | US5644147 Electro-optical device incorporating pixel transistors with plural gate electrodes |
| 07/01/1997 | US5644146 Thin film transistor |