| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 03/11/1997 | US5610415 Turn-off semiconductor component having amphoteric properties |
| 03/11/1997 | US5610411 Silicon carbide bipolar semiconductor device with birdsbeak isolation structure |
| 03/11/1997 | US5610410 III-V compound semiconductor device with Schottky electrode of increased barrier height |
| 03/11/1997 | US5610335 Microelectromechanical lateral accelerometer |
| 03/11/1997 | US5610098 N-INP Schottky diode structure and a method of making the same |
| 03/11/1997 | US5610097 Method for forming electrode on semiconductor |
| 03/11/1997 | US5610091 Method for manufacturing a non-volatile memory cell |
| 03/11/1997 | US5610090 Method of making a FET having a recessed gate structure |
| 03/11/1997 | US5610089 Method of fabrication of semiconductor integrated circuit device |
| 03/11/1997 | US5610087 Method for fabricating narrow base width lateral bipolar junction transistor, on SOI layer |
| 03/11/1997 | US5610086 Method of making an AlPSb/InP single heterojunction bipolar transistor on InP substrate for high-speed, high-power applications |
| 03/11/1997 | US5610085 Method of making a vertical FET using epitaxial overgrowth |
| 03/11/1997 | US5610084 Method of manufacturing an antifuse utilizing nitrogen implantation |
| 03/11/1997 | US5610082 Method for fabricating thin film transistor using back light exposure |
| 03/06/1997 | WO1997008755A1 Off-state gate-oxide field reduction in cmos |
| 03/06/1997 | WO1997008754A2 SiC SEMICONDUCTOR DEVICE COMPRISING A PN JUNCTION WITH A VOLTAGE ABSORBING EDGE |
| 03/06/1997 | WO1997008747A1 Method of producing an eeprom semiconductor structure |
| 03/06/1997 | WO1997008744A1 Laminate for forming ohmic electrode and ohmic electrode |
| 03/06/1997 | DE19631389A1 Monolithischer spannungsvariabler Kondensator Monolithic voltage variable capacitor |
| 03/06/1997 | DE19623069A1 Flüssigkristallanzeigevorrichtung und Verfahren zum Herstellen derselben A liquid crystal display device and method of manufacturing the same |
| 03/06/1997 | DE19609449A1 HF circuitry with silicon substrate with specific resistance of more than 100 ohms per cm |
| 03/06/1997 | DE19603279A1 Semiconductor pressure sensor with chip with central diaphragm |
| 03/06/1997 | DE19548056C1 Gate electrode mfg. method for MOS structure |
| 03/06/1997 | CA2203557A1 Multi-layered structure for fabricating an ohmic electrode and ohmic electrode |
| 03/05/1997 | EP0760529A2 Lateral IGBT |
| 03/05/1997 | EP0760528A2 Semiconductor device on silicium base with a high blocking voltage edge termination |
| 03/05/1997 | EP0760515A2 Method for reading and restoring data in a data storage element |
| 03/05/1997 | EP0760167A1 Semiconductor structure with one or more lateral highly blocking semiconductor components |
| 03/05/1997 | EP0760148A1 Electronic devices comprising an array |
| 03/05/1997 | EP0760020A1 Device having a switch comprising a chromium layer and method for depositing chromium layers by sputtering |
| 03/05/1997 | EP0354226B1 Process for forming isolation regions in a semiconductor substrate |
| 03/05/1997 | CN1144403A Semiconductor diode consisting of groove form casing component and packaging method |
| 03/05/1997 | CN1144402A High frequency static induction transistor having high output |
| 03/05/1997 | CN1144401A Semiconductor device and method for fabricating the same |
| 03/04/1997 | US5608616 Power converter |
| 03/04/1997 | US5608557 Circuitry with gate line crossing semiconductor line at two or more channels |
| 03/04/1997 | US5608340 Four-terminal semiconductor device |
| 03/04/1997 | US5608338 Evaluating the lifetime and reliability of a TFT in a stress test using gate voltage and temperature measurements |
| 03/04/1997 | US5608266 Thin film for a multilayer semiconductor device for improving thermal stability and a method thereof |
| 03/04/1997 | US5608259 Reverse current flow prevention in a diffused resistor |
| 03/04/1997 | US5608258 MOS precision capacitor with low voltage coefficient |
| 03/04/1997 | US5608253 Advanced transistor structures with optimum short channel controls for high density/high performance integrated circuits |
| 03/04/1997 | US5608251 Thin film semiconductor integrated circuit and method of fabricating the same |
| 03/04/1997 | US5608250 Volatile memory cell with interface charge traps |
| 03/04/1997 | US5608244 Semiconductor diode with reduced recovery current |
| 03/04/1997 | US5608241 Semiconductor device having a memory cell portion and a logic portion |
| 03/04/1997 | US5608239 Field effect transistor |
| 03/04/1997 | US5608238 Semiconductor device having two insulated gates and capable of thyristor function and method for operating the same |
| 03/04/1997 | US5608237 Bidirectional semiconductor switch |
| 03/04/1997 | US5608236 Semiconductor device |
| 03/04/1997 | US5608235 In a semiconductor substrate |
| 03/04/1997 | US5608232 Silicon film containing at least one compound of nickel, iron, cobalt, platinum, and palladium; thin film transistors |
| 03/04/1997 | US5608231 Field effect transistor having channel with plural quantum boxes arranged in a common plane |
| 03/04/1997 | US5608229 Quantum box semiconductor device |
| 03/04/1997 | US5607884 Method for fabricating MOS transistor having source/drain region of shallow junction and silicide film |
| 03/04/1997 | US5607872 Method of fabricating charge coupled device |
| 03/04/1997 | US5607869 Method for manufacturing asymmetrical LDD type MIS device |
| 03/04/1997 | US5607868 Method of fabricating semiconductor device with channel ion implantation through a conductive layer |
| 03/04/1997 | US5607865 Semiconductors |
| 02/27/1997 | WO1997007548A1 Low voltage short channel trench dmos transistor |
| 02/27/1997 | WO1997007547A1 High density trenched dmos transistor |
| 02/27/1997 | WO1997007546A1 Metal insulator semiconductor structure with polarization-compatible buffer layer |
| 02/27/1997 | WO1997007535A1 Hex metal on rectangular cells; metal or metal two is hex |
| 02/27/1997 | WO1997007534A1 A process for fabricating semiconductor devices with shallowly doped regions using dopant compounds containing elements of high solid solubility |
| 02/27/1997 | WO1997007533A1 Trenched dmos transistor with buried layer for reduced on-resistance and ruggedness |
| 02/27/1997 | WO1997007518A1 Capacitor with a double electrical layer |
| 02/27/1997 | WO1997002592A3 Power semiconductor devices |
| 02/27/1997 | WO1996041412A3 Monolithic class d amplifier |
| 02/27/1997 | DE19632110A1 Power semiconductor device with isolating trench |
| 02/27/1997 | DE19610272A1 Semiconductor device with contact hole manufacturing method for e.g. MOS transistor of memory |
| 02/27/1997 | CA2228608A1 Metal insulator semiconductor structure with polarization-compatible buffer layer |
| 02/26/1997 | EP0759640A1 Semiconductor superlattice oscillator and methods of manufacturing and operating the same |
| 02/26/1997 | EP0759639A2 Source/drain structure of high voltage MOSFET and method of fabricating the same |
| 02/26/1997 | EP0759638A2 High withstand voltage semiconductor device and manufacturing method thereof |
| 02/26/1997 | EP0759622A2 Nonvolatile memory and method of programming the same |
| 02/26/1997 | EP0639266B1 A method of manufacturing a measuring device |
| 02/26/1997 | CN1143833A Semiconductor device |
| 02/26/1997 | CN1143814A Nonvolatile memory and emthod of programming the same |
| 02/25/1997 | US5606524 Non-volatile semiconductor memory device capable of effecting high-speed operation with low voltage |
| 02/25/1997 | US5606521 Electrically erasable and programmable read only memory with non-uniform dielectric thickness |
| 02/25/1997 | US5606278 Circuit for limiting the output voltage of a power transistor |
| 02/25/1997 | US5606202 Planarized gate conductor on substrates with above-surface isolation |
| 02/25/1997 | US5606197 High capacitance capacitor in an integrated function block or an integrated circuit |
| 02/25/1997 | US5606195 High-voltage bipolar transistor utilizing field-terminated bond-pad electrodes |
| 02/25/1997 | US5606192 Semiconductor integrated circuits having bipolar transistors and LDD-structured MOSFET |
| 02/25/1997 | US5606191 Semiconductor device with lightly doped drain regions |
| 02/25/1997 | US5606190 Microelectronic circuit structure having improved structural fineness and method for manufacturing same |
| 02/25/1997 | US5606185 Parabolically graded base-collector double heterojunction bipolar transistor |
| 02/25/1997 | US5606184 Semiconductor |
| 02/25/1997 | US5606183 Double-gated turn-off thyristor |
| 02/25/1997 | US5606180 III-V compound semiconductor with high crystal quality and luminous efficiency |
| 02/25/1997 | US5606179 Insulated gate field effect transistor having a crystalline channel region |
| 02/25/1997 | US5606178 Bipolar resonant tunneling transistor |
| 02/25/1997 | US5606177 Silicon oxide resonant tunneling diode structure |
| 02/25/1997 | US5606175 Multiple quantum well device |
| 02/25/1997 | US5605861 Thin polysilicon doping by diffusion from a doped silicon dioxide film |
| 02/25/1997 | US5605858 Method of forming high-dielectric-constant material electrodes comprising conductive sidewall spacers of same material as electrodes |
| 02/25/1997 | US5605855 Process for fabricating a graded-channel MOS device |
| 02/25/1997 | US5605852 Method for fabricating high voltage transistor having trenched termination |
| 02/25/1997 | US5605851 Method of forming semiconductor device with a buried junction |