Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/1996
11/12/1996US5574295 Dielectrically isolated SiC mosfet
11/12/1996US5574294 Vertical dual gate thin film transistor with self-aligned gates / offset drain
11/12/1996US5574292 Semiconductor device with monosilicon layer
11/12/1996US5574291 Oligothiophenes
11/12/1996US5574222 Acceleration sensor
11/12/1996US5573979 Sloped storage node for a 3-D dram cell structure
11/12/1996US5573965 Method of fabricating semiconductor devices and integrated circuits using sidewall spacer technology
11/12/1996US5573964 Method of making thin film transistor with a self-aligned bottom gate using diffusion from a dopant source layer
11/12/1996US5573961 Method of making a body contact for a MOSFET device fabricated in an SOI layer
11/12/1996US5573960 Method of manufacturing semiconductor layers by bonding without defects created by bonding
11/12/1996US5573959 Method of forming a liquid crystal device
11/12/1996US5573958 Method of fabricating a thin film transistor wherein the gate terminal is formed after the gate insulator
11/12/1996CA2078940C Compound semiconductor device
11/07/1996WO1996035231A1 Self-aligned contact trench dmos transistor structure and methods of fabricating same
11/07/1996WO1996035230A1 Method of fabricating self-aligned contact trench dmos transistors
11/07/1996DE19542606A1 MIS transistor with three-layer, transistor insulating film
11/06/1996EP0741417A2 Heterostructure field effect device having refractory ohmic contact directly on channel layer and method of making
11/06/1996EP0741416A1 Thin epitaxy RESURF ic containing HV p-ch and n-ch devices with source or drain not tied to grounds potential
11/06/1996EP0741414A2 Monolithic microwave integrated circuit and method
11/06/1996EP0741413A2 Monolithic high frequency integrated circuit structure and method of manufacturing the same
11/06/1996EP0741412A2 Semiconductor device having high voltage protection capability
11/06/1996EP0741405A2 Method of fabricating doped polysilicon gate electrodes
11/06/1996EP0740854A1 A self-aligned dual-bit split gate (dsg) flash eeprom cell
11/06/1996EP0740794A1 Process for producing an acceleration sensor
11/06/1996EP0642425A4 Method of fabricating group iii-v compound semiconductor devices using selective etching.
11/06/1996CN1135220A Self-addressable self-assembling microelectronic system and devices for molecular biological analysis and diagnostics
11/06/1996CN1135095A Semiconductor device and its related integrated circuit
11/06/1996CN1135039A Semiconductor composition sensor
11/05/1996US5572464 Semiconductor memory device and method of using the same
11/05/1996US5572394 CMOS on-chip four-LVTSCR ESD protection scheme
11/05/1996US5572063 Bipolar transistor with L-shaped emitter
11/05/1996US5572060 Uncooled YBaCuO thin film infrared detector
11/05/1996US5572055 Insulated-gate bipolar transistor with reduced latch-up
11/05/1996US5572054 Method of operating a single transistor non-volatile electrically alterable semiconductor memory device
11/05/1996US5572052 Electronic device using zirconate titanate and barium titanate ferroelectrics in insulating layer
11/05/1996US5572051 Solid state image sensing device
11/05/1996US5572049 Multi-layer collector heterojunction transistor
11/05/1996US5572048 Voltage-driven type semiconductor device
11/05/1996US5572047 Electro-Optic device having pairs of complementary transistors
11/05/1996US5572045 Light valve device using semiconductive composite substrate
11/05/1996US5572044 Monocrystalline semiconductor commutator with grain boundry
11/05/1996US5572043 Schottky junction device having a Schottky junction of a semiconductor and a metal
11/05/1996US5572040 Mos device
11/05/1996US5571747 Method for producing a semiconductor commutator
11/05/1996US5571745 Fabrication method of semiconductor device containing n- and p-channel MOSFETs
11/05/1996US5571744 Defect free CMOS process
11/05/1996US5571741 Membrane dielectric isolation IC fabrication
11/05/1996US5571740 Method of making a capped modular microwave integrated circuit
11/05/1996US5571738 Method of making poly LDD self-aligned channel transistors
11/05/1996US5571736 Fabricating a high density EPROM cell by removing a portion of the field insulator regions
11/05/1996US5571735 Method of manufacturing a semiconducter device capable of easily forming metal silicide films on source and drain regions
11/05/1996US5571734 Method for forming a fluorinated nitrogen containing dielectric
11/05/1996US5571732 Method for fabricating a bipolar transistor
11/05/1996US5571731 Procedure for the manufacture of bipolar transistors without epitaxy and with fully implanted base and collector regions which are self-positioning relative to each other
11/05/1996US5571730 Semiconductor device having vertical metal oxide semiconductors and a method for manufacturing the same
11/05/1996US5571391 Group 3a metal nitride semiconductor layer, metal silicide electrode layer, free energy
11/05/1996US5571376 Quantum device and method of making such a device
11/05/1996CA2061349C Surface-normal optoelectronic fusion device
10/1996
10/30/1996EP0740352A2 Power MOS-gated device with recessed gate and method for its fabrication
10/30/1996EP0740351A2 Bipolar transistor having an emitter region formed of silicon carbide
10/30/1996EP0740350A1 Compound semiconductor device having reduced resistance
10/30/1996EP0740348A1 Semiconductor memory structure, using a ferroelectric dielectric and method of formation
10/30/1996EP0740345A2 Semiconductor device having static memory cell provided with data retaining means
10/30/1996EP0740344A2 Method and apparatus for coupling multiple independent on-chip Vdd busses to an ESD core clamp
10/30/1996EP0740338A2 Composite integrated circuit device
10/30/1996EP0740337A1 Method of forming a thick field dielectric and a self-aligned channel stopper in a semiconductor device
10/30/1996EP0740335A2 SOI-BiCMOS Fabrication
10/30/1996EP0740306A2 Method of programming a semiconductor memory device
10/30/1996EP0739542A1 Input/output transistors with optimized esd protection
10/30/1996EP0739538A1 High value gate leakage resistor
10/30/1996CN2239078Y Solid discharge diode
10/29/1996US5569953 Algaas
10/29/1996US5569952 Semiconductor device with a semiconductor element provided in a mesa structure
10/29/1996US5569949 Area efficient high voltage MOSFETs with vertical RESURF drift regions
10/29/1996US5569948 Semiconductor device having a contact plug and contact pad
10/29/1996US5569946 Flash memory cell with self-aligned tunnel dielectric area above LDD structure
10/29/1996US5569945 Formed on a semiconductor substrate
10/29/1996US5569944 Compound semiconductor heterojunction bipolar transistor
10/29/1996US5569943 Semiconductor device
10/29/1996US5569941 Insulated gate semiconductor device with a buried gapped semiconductor region
10/29/1996US5569940 Alternating current switch
10/29/1996US5569937 High breakdown voltage silicon carbide transistor
10/29/1996US5569936 Semiconductor device employing crystallization catalyst
10/29/1996US5569935 Semiconductor device and process for fabricating the same
10/29/1996US5569933 Optical controlled resonant tunneling oscillator
10/29/1996US5569932 Porous silicon carbide (SIC) semiconductor device
10/29/1996US5569852 Capacitive accelerometer sensor and method for its manufacture
10/29/1996US5569624 Method for shallow junction formation
10/29/1996US5569616 Process for forming an output circuit device for a charge transfer element having tripartite diffusion layer
10/29/1996US5569615 Method for forming a flash memory by forming shallow and deep regions adjacent the gate
10/29/1996US5569613 Method of making bipolar junction transistor
10/29/1996US5569612 Process for manufacturing a bipolar power transistor having a high breakdown voltage
10/29/1996US5569611 Method of manufacturing a bipolar transistor operating at low temperature
10/29/1996US5569609 Bidirectional Shockley diode
10/29/1996US5569272 Tissue-connective devices with micromechanical barbs
10/24/1996WO1996033514A1 Semiconductor device and method of production thereof
10/24/1996WO1996033511A2 Method of manufacturing a progammable semiconductor device in the form of an anti-fuse
10/24/1996DE19615324A1 Vertical bipolar transistor prodn. method
10/24/1996DE19614162A1 Semiconducting device, esp. high speed bipolar transistor
10/24/1996DE19534604C1 Field effect power semiconductor element
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