Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/1996
11/27/1996CN1136712A MIS gate composite semiconductor device and its driving method and power change-over device
11/27/1996CN1136709A Method of manufacturing transistor in semiconductor device
11/27/1996CN1136599A Corrosion apparatus
11/26/1996US5579260 Non-volatile semiconductor memory device and data programming method
11/26/1996US5579257 Method for reading and restoring data in a data storage element
11/26/1996US5578867 Passivation method and structure using hard ceramic materials or the like
11/26/1996US5578860 Monolithic high frequency integrated circuit structure having a grounded source configuration
11/26/1996US5578859 Semiconductor structure having one or more lateral, high-blocking semiconductor components
11/26/1996US5578855 High-voltage CMOS transistors on a standard CMOS wafer
11/26/1996US5578853 Semiconductor memory cell having information storage transistor and switching transistor
11/26/1996US5578852 Semiconductor memory cell having information storage transistor and switching transistor
11/26/1996US5578851 Trenched DMOS transistor having thick field oxide in termination region
11/26/1996US5578850 Vertically oriented DRAM structure
11/26/1996US5578848 Ultra thin dielectric for electronic devices and method of making same
11/26/1996US5578846 Static ferroelectric memory transistor having improved data retention
11/26/1996US5578845 Dielectric thin film device with lead erbium zirconate titanate
11/26/1996US5578844 Semiconductor element and process for production for the same
11/26/1996US5578843 Semiconductor sensor with a fusion bonded flexible structure
11/26/1996US5578842 Charge coupled device image sensor
11/26/1996US5578841 Vertical MOSFET device having frontside and backside contacts
11/26/1996US5578840 Microelectronic integrated circuit structure and method using three directional interconnect routing based on hexagonal geometry
11/26/1996US5578838 Structure of and fabricating method for a thin film transistor
11/26/1996US5578522 Semiconductor device and method of fabricating same
11/26/1996US5578514 Lateral double diffused insulated gate field effect transistor and fabrication process
11/26/1996US5578513 Method of making a semiconductor device having a gate all around type of thin film transistor
11/26/1996US5578511 Method of making signal charge transfer devices
11/26/1996US5578509 Method of making a field effect transistor
11/26/1996US5578508 Vertical power MOSFET and process of fabricating the same
11/26/1996US5578506 Method of fabricating improved lateral Silicon-On-Insulator (SOI) power device
11/22/1996EP0757835A4 High-speed, non-volatile electrically programmable and erasable cell and method
11/21/1996WO1996036998A1 Method for making direct multistage tft devices with grid-source or drain interconnection
11/21/1996WO1996036990A1 Silicon-based semiconductor component with a porous layer and process for producing porous silicon layers
11/21/1996DE19621144A1 Prodn. of silicon based component with a porous layer
11/21/1996DE19620021A1 U=shaped trench MOS semiconductor power transistor device
11/20/1996EP0743754A1 Starter circuit of a fluorescent tube
11/20/1996EP0743753A1 Switching and power supply unit
11/20/1996EP0743687A2 Optical trigger thyristor and fabrication method
11/20/1996EP0743685A2 Nonvolatile semiconductor memory utilizing polarization of ferroelectric material
11/20/1996EP0743684A2 Thin film transistor with reduced channel length for liquid crystal displays
11/20/1996EP0743683A1 Protection element of an integrated circuit of a MOS type
11/20/1996EP0742958A1 Turn-off power semiconductor component
11/20/1996EP0742957A1 Mos-controlled thyristor
11/20/1996EP0742944A1 Semiconductor memory with non-volatile memory transistor
11/20/1996EP0612376B1 Capacitive discharge ignition system with self-triggering solid state switch
11/20/1996CN1136367A Input/output transistors with optimized ESD protection
11/20/1996CN1136366A Layout for radio frequency power transistors
11/20/1996CN1136224A Piezoelectric element and method of manufacturing the same
11/20/1996CN1136223A Thin film transistor and method of fabrication
11/20/1996CN1136221A Shell of semiconductor pressure contactor
11/20/1996CN1136207A 半导体存储器 Semiconductor memory
11/20/1996CN1033344C Nonvolatile semiconductor memories with a nand logic cell structure
11/20/1996CA2176643A1 Thin film transistor with reduced channel length for liquid crystal displays
11/19/1996US5576995 Method for rewriting a flash memory
11/19/1996US5576579 Alternating layers of tantalum nitride and silicon nitride, semiconductors, oxidation resistance
11/19/1996US5576574 Mosfet with fully overlapped lightly doped drain structure and method for manufacturing same
11/19/1996US5576573 Stacked CVD oxide architecture multi-state memory cell for mask read-only memories
11/19/1996US5576572 Semiconductor integrated circuit device and method of manufacturing the same
11/19/1996US5576571 Semiconductor memory cell having information storage transistor and switching transistor
11/19/1996US5576570 Semiconductor device having CMOS circuit
11/19/1996US5576569 Electrically programmable and erasable memory device with depression in lightly-doped source
11/19/1996US5576568 Single-transistor electrically-alterable switch employing fowler nordheim tunneling for program and erase
11/19/1996US5576567 Vertical memory cell array and method of fabrication
11/19/1996US5576565 MIS capacitor and a semiconductor device utilizing said MIS capacitor
11/19/1996US5576564 Ferroelectric thin film with intermediate buffer layer
11/19/1996US5576559 Heterojunction electron transfer device
11/19/1996US5576556 Thin film semiconductor device with gate metal oxide and sidewall spacer
11/19/1996US5576555 Thin film semiconductor device
11/19/1996US5576251 Process for making a semiconductor sensor with a fusion bonded flexible structure
11/19/1996US5576250 Process for the production of accelerometers using silicon on insulator technology
11/19/1996US5576245 Method of making vertical current flow field effect transistor
11/19/1996US5576231 Thin films, reliability, high product yield
11/19/1996US5576230 Method of fabrication of a semiconductor device having a tapered implanted region
11/19/1996US5576229 Method of fabricating a thin-film transistor and liquid-crystal display apparatus
11/19/1996US5576227 Process for fabricating a recessed gate MOS device
11/19/1996US5576226 Method of fabricating memory device using a halogen implant
11/14/1996WO1996036082A1 Electronic devices based on discotic liquid crystals
11/14/1996WO1996036076A1 Emitter switched thyristor
11/14/1996WO1996036072A2 Method of manufacturing a device, by which method a substrate with semiconductor element and conductor tracks is glued to a support body with metallization
11/14/1996DE19621244A1 Semiconductor component, e.g. vertical MOS transistor
11/14/1996DE19612948A1 Semiconductor component, e.g. flash EEPROM cell
11/14/1996DE19548386A1 Insulation film separated MOS transistor mfr.
11/13/1996EP0742593A2 Semiconductor device with multilevel structured insulator and fabrication method thereof
11/13/1996EP0742591A1 Complete protection component for interface circuit of subscriber lines
11/13/1996EP0742582A2 Doping procedure for semiconductor growth processes
11/13/1996EP0742581A2 Sealed cavity arrangement
11/13/1996EP0741911A1 Thin film transistor for liquid crystal display and method for fabricating the same
11/13/1996EP0601068A4 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom.
11/13/1996EP0591554B1 Acceleration sensor and its manufacture
11/13/1996EP0467928B1 Improved novram cell using two differential, decouplable nonvolatile memory elements
11/13/1996CN1135656A Method for fabricating metal oxide semiconductor field
11/12/1996US5574685 Self-aligned buried channel/junction stacked gate flash memory cell
11/12/1996US5574683 Memory device and a method for writing information in the memory device
11/12/1996US5574395 Semiconductor circuit
11/12/1996US5574308 Semiconductor device and its manufacturing method
11/12/1996US5574306 Lateral bipolar transistor and FET
11/12/1996US5574303 Semiconductor voltage sensing device
11/12/1996US5574302 Field effect transistor structure of a diving channel device
11/12/1996US5574301 Vertical switched-emitter structure with improved lateral isolation
11/12/1996US5574299 Semiconductor device having vertical conduction transistors and cylindrical cell gates
11/12/1996US5574297 Gate turnoff thyristor with reduced gate trigger current
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