| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 08/26/1997 | US5661312 Silicon carbide MOSFET |
| 08/26/1997 | US5661311 Semiconductor device and process for fabricating the same |
| 08/26/1997 | US5661087 Vertical interconnect process for silicon segments |
| 08/26/1997 | US5661085 Method for forming a low contact leakage and low contact resistance integrated circuit device electrode |
| 08/26/1997 | US5661072 Method for reducing oxide thinning during the formation of a semiconductor device |
| 08/26/1997 | US5661066 Semiconductor integrated circuit |
| 08/26/1997 | US5661063 Semiconductor memory device provided with capacitors formed above and below a cell transistor and method for manufacturing the same |
| 08/26/1997 | US5661059 Boron penetration to suppress short channel effect in P-channel device |
| 08/26/1997 | US5661057 Method of making flash memory |
| 08/26/1997 | US5661056 Non-volatile semiconductor memory device and method of manufacturing the same |
| 08/26/1997 | US5661052 Forming gate oxide on zones separated by isolation regions; patterning; etching |
| 08/26/1997 | US5661051 Liquid phase deposition of silicon dioxide |
| 08/26/1997 | US5661050 Method of making a TFT with reduced channel length for LCDs |
| 08/26/1997 | US5661048 Method of making an insulated gate semiconductor device |
| 08/26/1997 | US5660971 Thin film device and a method for fabricating the same |
| 08/26/1997 | US5660680 Method for fabrication of high vertical aspect ratio thin film structures |
| 08/21/1997 | DE19651109A1 Semiconductor device having high integration |
| 08/21/1997 | DE19623517C1 MOS transistors for biotechnical applications |
| 08/20/1997 | EP0789935A1 Heterojunction energy gradient structure |
| 08/20/1997 | EP0789934A1 Ballast monitoring for radio frequency power transistors |
| 08/20/1997 | EP0789933A2 Silicon-on-insulator device with floating collector |
| 08/20/1997 | EP0728367A4 A flash eprom transistor array and method for manufacturing the same |
| 08/20/1997 | EP0674799B1 Memory array with field oxide islands eliminated |
| 08/20/1997 | EP0643883A4 Sub-nanoscale electronic systems, devices and processes. |
| 08/20/1997 | CN1157488A Power semiconductor element |
| 08/20/1997 | CN1157480A Method of forming unilateral, graded-channel semiconductor device using gate electrode disposable spacer |
| 08/20/1997 | CN1157458A Method for reading and restoring data in data storage element |
| 08/20/1997 | CN1157448A Active matrix display device |
| 08/19/1997 | US5659514 Memory cell and current mirror circuit |
| 08/19/1997 | US5659505 Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor |
| 08/19/1997 | US5659504 Method and apparatus for hot carrier injection |
| 08/19/1997 | US5659501 Method and device for supplying negative programming voltages to non-volatile memory cells in a non-volatile memory device |
| 08/19/1997 | US5659500 Nonvolatile memory array with compatible vertical source lines |
| 08/19/1997 | US5659197 Hot-carrier shield formation for bipolar transistor |
| 08/19/1997 | US5659196 Integrated circuit device for acceleration detection |
| 08/19/1997 | US5659194 Semiconductor device having metal silicide film |
| 08/19/1997 | US5659193 Semiconductor device and method for manufacturing the same |
| 08/19/1997 | US5659190 Semiconductor device in a thin active layer with high breakdown voltage |
| 08/19/1997 | US5659188 Capped anneal |
| 08/19/1997 | US5659187 Low defect density/arbitrary lattice constant heteroepitaxial layers |
| 08/19/1997 | US5659185 Insulated Gate thyristor |
| 08/19/1997 | US5659183 Thin film transistor having a drain offset region |
| 08/19/1997 | US5659181 Thin film transistors; monoclinic crystal symmetry |
| 08/19/1997 | US5659180 Heterojunction interband tunnel diodes with improved P/V current ratios |
| 08/19/1997 | US5659179 Ultra-small semiconductor devices having patterned edge planar surfaces |
| 08/19/1997 | US5659138 Surface type acceleration sensor |
| 08/19/1997 | US5658834 Introducing into chamber containing substrate a precursor vapor containing carbon and boron, energizing vapor to form boron carbide film |
| 08/19/1997 | US5658820 Forming lower electrode, ferroelectric thin film, upper platinum electrode, forming photoresist on upper electrode, patterning, etching |
| 08/19/1997 | US5658815 Patterning gate conductive line on gate insulating film, depositing conductive layer, implanting low density impurity, converting first conductivity layer to second conductivity layer, patterning, implanting high density impurity |
| 08/19/1997 | US5658813 Method for manufacturing a semiconductor integrated circuit device having a stack gate structure |
| 08/19/1997 | US5658812 Nonvolatile semiconductor memory device and its manufacturing method |
| 08/19/1997 | US5658811 Introducing impurity to form a punch-through stopper between source and drain; on first tungsten film inside opening, second tungsten film is selectively deposited to form gate electrode |
| 08/19/1997 | US5658808 Method of fabricating polycrystalline silicon thin-film transistor having symmetrical lateral resistors |
| 08/19/1997 | US5658807 Methods of forming conductive polysilicon lines and bottom gated thin film transistors |
| 08/19/1997 | US5658806 Method for fabricating thin-film transistor with bottom-gate or dual-gate configuration |
| 08/19/1997 | US5658805 Method of fabricating thin-film transistors |
| 08/14/1997 | WO1997029519A1 Short channel fermi-threshold field effect transistors including drain field termination region and methods of fabricating same |
| 08/14/1997 | WO1997029518A1 Field effect controlled semiconductor component |
| 08/14/1997 | WO1997029400A1 Contact structure for multilayer wiring, active matrix substrate and method of manufacturing the same |
| 08/14/1997 | WO1997021249A3 Field effect transistor |
| 08/14/1997 | DE19604890A1 Optical break-over diode for motor vehicle ignition voltage distributor |
| 08/14/1997 | DE19604044A1 Field effect semiconductor device |
| 08/13/1997 | EP0789403A1 Zener zap diode and method of manufacturing the same |
| 08/13/1997 | EP0789402A1 Gate contact structure of a vertical high frequency semiconductor device |
| 08/13/1997 | EP0789401A2 LD MOSFET or MOSFET with an integrated circuit containing thereof and manufacturing method |
| 08/13/1997 | EP0789400A2 Semiconductor device and method for fabricating the same |
| 08/13/1997 | EP0789399A2 Output circuit device for charge transfer element |
| 08/13/1997 | EP0789395A2 Semiconductor device having capacitor and manufacturing method therefor |
| 08/13/1997 | EP0789388A2 Structure and fabrication method for schottky and ohmic electrodes onto semiconductor devices |
| 08/13/1997 | EP0789387A1 Laminate for forming ohmic electrode and ohmic electrode |
| 08/13/1997 | EP0789386A2 Method of fabricating an abrupt hetero interface by organometallic vapor phase growth |
| 08/13/1997 | EP0789144A2 A turbine engine ignition exciter circuit incluiding low voltage lockout control |
| 08/13/1997 | EP0788660A2 Semiconductor device of hv-ldmost type |
| 08/13/1997 | EP0788659A1 High voltage lateral dmos device with enhanced drift region |
| 08/13/1997 | EP0788657A1 High resolution active matrix lcd cell design |
| 08/13/1997 | EP0740854A4 A self-aligned dual-bit split gate (dsg) flash eeprom cell |
| 08/13/1997 | EP0739538A4 High value gate leakage resistor |
| 08/13/1997 | EP0632880B1 Micromechanical sensor |
| 08/13/1997 | EP0474637B1 Overvoltage protective circuit for mos components |
| 08/13/1997 | CN1156906A MOS field effect transistor in dynamic random access memory device and method for fabricating same |
| 08/13/1997 | CN1156905A Insulated gate bipolar transistor |
| 08/12/1997 | US5657271 Nonvolatile semiconductor memory device in which band to band tunneling current is suppressed |
| 08/12/1997 | US5657270 Electrically erasable programmable read-only memory with threshold value controller for data programming |
| 08/12/1997 | US5657207 Alignment means for integrated circuit chips |
| 08/12/1997 | US5657206 Conductive epoxy flip-chip package and method |
| 08/12/1997 | US5657189 Hall-effect magnetic sensor and a thin-film magnetic head using such a hall-effect magnetic sensor |
| 08/12/1997 | US5656966 Turbine engine ignition exciter circuit including low voltage lockout control |
| 08/12/1997 | US5656859 Semiconductor device |
| 08/12/1997 | US5656852 High-dielectric-constant material electrodes comprising sidewall spacers |
| 08/12/1997 | US5656844 Semiconductor-on-insulator transistor having a doping profile for fully-depleted operation |
| 08/12/1997 | US5656843 Semiconductor device having a vertical insulated gate field effect device and a breakdown region remote from the gate |
| 08/12/1997 | US5656842 Vertical mosfet including a back gate electrode |
| 08/12/1997 | US5656841 Semiconductor device with contact hole |
| 08/12/1997 | US5656839 Semiconductor integrated circuit device having single-element type nonvolatile memory elements |
| 08/12/1997 | US5656838 Non-volatile semiconductor memory having programming region for injecting and ejecting carriers into and from floating gate |
| 08/12/1997 | US5656837 Flash memory system, and methods of constructing and utilizing same |
| 08/12/1997 | US5656832 Single crystal substrate with aluminum nitride buffer layer having pinholes to control polarity and nucleus formation, plurality of aluminum/gallium/indium nitride layers |
| 08/12/1997 | US5656828 Electronic component with a semiconductor composite structure |
| 08/12/1997 | US5656826 Liquid crystal device with thick passivation layer over driver region |
| 08/12/1997 | US5656825 Thin film transistor having crystalline semiconductor layer obtained by irradiation |