Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/1998
11/11/1998EP0853818A4 Low voltage short channel trench dmos transistor
11/11/1998EP0787356A4 Mos-controlled high-power thyristor
11/11/1998CN1198839A Method and mold for manufacturing semiconductor device, semiconductor device, and method for mounting the device
11/11/1998CN1198596A Film transistor and making method thereof and LCD device using it
11/11/1998CN1198595A Semiconductor device and making method thereof
11/11/1998CN1198592A Semiconductor device
11/11/1998CN1198591A Integrated circuit and making method
11/11/1998CN1040710C Short circuit structure on side of positive pole of unsymetric thyristor
11/10/1998US5835985 Reverse conducting gate-turnoff thyristor
11/10/1998US5835415 Flash EEPROM memory systems and methods of using them
11/10/1998US5835172 Thin film transistor liquid crystal display with main gate electrode contacting subsidiary gate electrodes and method of fabricating
11/10/1998US5834846 Semiconductor device with contact structure and method of manufacturing the same
11/10/1998US5834827 Gate electrode is alpha constructed tantalum that contains hydrogen or nitrogen
11/10/1998US5834826 Protection against adverse parasitic effects in junction-isolated integrated circuits
11/10/1998US5834823 Transistor with constant voltage diode
11/10/1998US5834821 Triangular semiconductor "AND" gate device
11/10/1998US5834817 Field effect transistor with a shaped gate electrode
11/10/1998US5834816 MOSFET having tapered gate electrode
11/10/1998US5834814 Semiconductor integrated circuit
11/10/1998US5834813 Field-effect transistor for one-time programmable nonvolatile memory element
11/10/1998US5834810 Asymmetrical vertical lightly doped drain transistor and method of forming the same
11/10/1998US5834809 MIS transistor semiconductor device
11/10/1998US5834808 Non-volatile semiconductor memory device
11/10/1998US5834807 Nonvolatile memory device having an improved integration and reduced contact failure
11/10/1998US5834804 Improved diffusion barrier or buffer layer
11/10/1998US5834802 Metal semiconductor field effect transistors having improved intermodulation distortion using different pinch-off voltages
11/10/1998US5834800 Heterojunction bipolar transistor having mono crystalline SiGe intrinsic base and polycrystalline SiGe and Si extrinsic base regions
11/10/1998US5834798 Semiconductor device containing semiconductor region formed in active layer on sidewall of contact opening
11/10/1998US5834797 Transistor having first and second gate electrodes
11/10/1998US5834796 Amorphous silicon thin film transistor and method of preparing same
11/10/1998US5834793 Semiconductor devices
11/10/1998US5834792 Articles comprising doped semiconductor material
11/10/1998US5834773 Method and apparatus for testing the function of microstructure elements
11/10/1998US5834354 Ultra high density NOR gate using a stacked transistor arrangement
11/10/1998US5834353 Method of making deep sub-micron meter MOSFET with a high permitivity gate dielectric
11/10/1998US5834348 Method for manufacturing a semiconductor device having a ferroelectric capacitor
11/10/1998US5834347 MIS type semiconductor device and method for manufacturing same
11/10/1998US5834345 Method of fabricating field effect thin film transistor
11/10/1998US5834344 Method for forming high performance thin film transistor structure
11/10/1998US5834343 Method of manufacturing thin film transistor
11/10/1998US5834342 Using two different photoresist masks formed from same optical mask, forming thin film transistor with reduced source and drain resistance
11/10/1998US5834334 Method of forming a multi-chip module from a membrane circuit
11/10/1998US5834333 Transducer having a resonating silicon beam and method for forming same
11/10/1998US5834332 Micromechanical semiconductor components and manufacturing method therefor
11/10/1998US5834071 Polycrystalline silicon
11/10/1998US5833870 Method for forming a high density quantum wire
11/10/1998US5833749 Compound semiconductor substrate and process of producing same
11/05/1998WO1998049762A1 Device for limiting electrical alternating currents, especially during short-circuits
11/05/1998WO1998049733A1 Semi-conductor device and use thereof
11/05/1998WO1998049732A2 Lateral mos transistor device
11/05/1998WO1998049731A1 Silicon carbide field conrolled bipolar switch
11/05/1998WO1998049730A1 DESIGN AND FABRICATION OF ELECTRONIC DEVICES WITH InA1AsSb/A1Sb BARRIER
11/05/1998WO1998049726A1 Board for mounting semiconductor element, method for manufacturing the same, and semiconductor device
11/05/1998WO1998049724A1 Process for manufacturing semiconductor device
11/05/1998WO1998049719A1 Undoped silicon dioxide as etch stop for selective etch of doped silicon dioxide
11/05/1998WO1998049587A1 Method and apparatus for modulation of guided plasmons
11/05/1998WO1998049543A1 Scanning optical detection system
11/05/1998WO1998048608A2 Microbellows actuator
11/05/1998DE19717791A1 MOSFET for testing voltage strength of wafer containing transistors
11/04/1998EP0875943A2 Non-volatile semiconductor memory having programming region for injecting and ejecting carrier into and from floating gate
11/04/1998EP0875942A2 MOS transistor and its method of fabrication
11/04/1998EP0875941A2 Heterojunction bipolar transistor having a multilayer emitter structure
11/04/1998EP0875938A1 Electronic material, its manufacturing method, ferroelectric capacitator, and non-volatile memory
11/04/1998EP0875930A2 Planarization of an interconnection structure
11/04/1998EP0875929A2 Planarisation of an interconnect structure
11/04/1998EP0875077A2 A SEMICONDUCTOR DEVICE WITH A LOW RESISTANCE OHMIC CONTACT BETWEEN A METAL LAYER AND A SiC-LAYER
11/04/1998EP0875074A1 Semiconductor devices, and methods for same
11/04/1998CN1198250A Method for manufacturing semiconductor device
11/04/1998CN1198019A Field effect transistor and power amplifier including the same
11/04/1998CN1198018A Semiconductor device for shortening channel length
11/04/1998CN1198008A Fabrication method of semiconductor device with CMOS structure
11/04/1998CN1198003A MOS-gated semiconductor devices
11/03/1998US5831903 Electrically erasable programmable read-only memory with threshold value controller for data programming and method of programming the same
11/03/1998US5831694 TFT panel for high resolution- and large size- liquid crystal display
11/03/1998US5831338 Power MOSFET and method of preparing the same
11/03/1998US5831337 Vertical-type transistor device, having a bump electrode that has a shape with no interior angle exceeding 270°
11/03/1998US5831334 Field effect transistors comprising electrically conductive plugs having monocrystalline and polycrystalline silicon
11/03/1998US5831329 Layered system with an electrically activatable layer
11/03/1998US5831328 Semiconductor device and manufacturing method of the device
11/03/1998US5831324 Electromagnetic wave suppression method in a semiconductor manufacturing process
11/03/1998US5831320 High voltage metal oxide silicon field effect transistor
11/03/1998US5831319 Conductive spacer lightly doped drain (LDD) for hot carrier effect (HCE) control
11/03/1998US5831318 Radhard mosfet with thick gate oxide and deep channel region
11/03/1998US5831317 Semiconductor device and manufacture thereof
11/03/1998US5831316 Multi-finger MOS transistor element
11/03/1998US5831308 MOSFET having a particular SOI structure
11/03/1998US5831306 Asymmetrical transistor with lightly doped drain region, heavily doped source and drain regions, and ultra-heavily doped source region
11/03/1998US5831304 Semiconductor memory device that converges a floating gate threshold voltage to a predetermined positive value during data erasure
11/03/1998US5831303 Field effect transistor utilizing the gate structure two-dimensionally
11/03/1998US5831299 Thin ferroelectric film element having a multi-layered thin ferroelectric film and method for manufacturing the same
11/03/1998US5831297 Structure of metal-insulator-semiconductor-like mutiple-negative-differential-resistance device
11/03/1998US5831296 Semiconductor device
11/03/1998US5831294 Quantum box structure and carrier conductivity modulating device
11/03/1998US5831293 Semiconductor thyristor switching device and power converter using same
11/03/1998US5831292 IGBT having a vertical channel
11/03/1998US5831291 Semiconductor device
11/03/1998US5831289 Silicon carbide gate turn-off thyristor arrangement
11/03/1998US5831288 Silicon carbide metal-insulator semiconductor field effect transistor
11/03/1998US5831287 Bipolar semiconductor device having semiconductor layers of SiC and a method for producing a semiconductor device of SiC
11/03/1998US5831286 High mobility p-type transition metal tri-antimonide and related skutterudite compounds and alloys for power semiconducting devices
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