| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 07/28/1998 | US5786241 Method for forming a thin film semiconductor device utilizing a gate and gate side walls as masks |
| 07/28/1998 | CA2055675C Method for forming crystal article |
| 07/23/1998 | WO1998032178A1 JUNCTION TERMINATION FOR SiC SCHOTTKY DIODE |
| 07/23/1998 | WO1998032177A1 A SCHOTTKY DIODE OF SiC AND A METHOD FOR PRODUCTION THEREOF |
| 07/23/1998 | WO1998032176A1 As/P HYBRID nLDD JUNCTION AND MEDIUM Vdd OPERATION FOR HIGH SPEED MICROPROCESSORS |
| 07/23/1998 | WO1998032175A1 Semiconductor device provided with a metallization with a barrier layer comprising at least titanium, tungsten, or nitrogen, and method of manufacturing same |
| 07/23/1998 | WO1998032174A1 Semiconductor devices |
| 07/23/1998 | WO1998032173A1 Corrosion resistant imager |
| 07/23/1998 | WO1998032166A1 Method for producing a silicium capacitor |
| 07/23/1998 | WO1998031998A1 Pressure sensor for semi-conductor |
| 07/22/1998 | EP0854580A2 Digital to analogue converter |
| 07/22/1998 | EP0854519A1 SOI MOS field effect transistor |
| 07/22/1998 | EP0854518A1 Trench insulated gate bipolar transistor |
| 07/22/1998 | EP0854517A2 A solid-state imaging device |
| 07/22/1998 | EP0854515A1 A floating gate cell for a semiconductor memory array and method of fabrication |
| 07/22/1998 | EP0854514A1 An asymmetric cell for a semiconductor memory array and a manufacturing method therefor |
| 07/22/1998 | EP0854509A1 Fabrication method for non-volatile memory with high-voltage and logic components |
| 07/22/1998 | EP0854358A1 High sensitivity miniature pressure transducer |
| 07/22/1998 | EP0853821A1 Semiconductor diode with suppression of auger generation processes |
| 07/22/1998 | EP0853820A1 Nonvolatile reprogrammable interconnect cell with fn tunneling and programming method thereof |
| 07/22/1998 | EP0853819A1 Mos transistor with high output voltage endurance |
| 07/22/1998 | EP0853818A1 Low voltage short channel trench dmos transistor |
| 07/22/1998 | EP0853815A1 Formation of source/drain from doped glass |
| 07/22/1998 | EP0809847B1 Multi-valued read-only storage location with improved signal-to-noise ratio |
| 07/22/1998 | EP0729394B1 Making quantum dot particles of uniform size |
| 07/22/1998 | CN1188243A 有源矩阵显示器件及其制作方法 Active matrix display device and manufacturing method thereof |
| 07/21/1998 | USRE35854 Programmable protection circuit and its monolithic manufacturing |
| 07/21/1998 | US5784327 Electrically programmable/electrically readable semiconductor memory device |
| 07/21/1998 | US5784325 Semiconductor nonvolatile memory device |
| 07/21/1998 | US5784310 Low imprint ferroelectric material for long retention memory and method of making the same |
| 07/21/1998 | US5784187 Wafer level integration of an optical modulator and III-V photodetector |
| 07/21/1998 | US5784183 Semiconductor optical device and method for fabricating the same |
| 07/21/1998 | US5784133 Structure of liquid crystal display and manufacturing method thereof |
| 07/21/1998 | US5784132 Display device |
| 07/21/1998 | US5783966 Reducing junction capacitance and increasing current gain in collector-up bipolar transistors |
| 07/21/1998 | US5783856 Method for fabricating self-assembling microstructures |
| 07/21/1998 | US5783855 Lateral transistor |
| 07/21/1998 | US5783852 Used in peripheral circuit of liquid crystal displays |
| 07/21/1998 | US5783851 Semiconductor device |
| 07/21/1998 | US5783849 Semiconductor device |
| 07/21/1998 | US5783848 Memory cell |
| 07/21/1998 | US5783845 Semiconductor device and its manufacture utilizing crystal orientation dependence of impurity concentration |
| 07/21/1998 | US5783843 Method of fabricating polycrystalline silicon thin-film transistor having symmetrical lateral resistors |
| 07/21/1998 | US5783842 Semiconductor device having an insulating layer having a concave section formed by oxidizing a semiconductor layer |
| 07/21/1998 | US5783840 Universal quantum dot logic cell |
| 07/21/1998 | US5783838 Carrier layer of zinc and/or cadmium sulfide, selenide, or telluride, absorption layer of hydrogen doped siliicon, silicon nitride, silicon oxynitride or silicon carbide, improved sensitivity, less noise, low voltage |
| 07/21/1998 | US5783494 Using a gas including a freon-14 gas and either hydrogen chloride or chlorine-excluding carbontetrachloride and hydrogen bromide; uniform etch rate and easily controlled |
| 07/21/1998 | US5783491 Method of forming a truck MOS gate or a power semiconductor device |
| 07/21/1998 | US5783479 Structure and method for manufacturing improved FETs having T-shaped gates |
| 07/21/1998 | US5783478 Forming a composite gate electrode on a gate insulating layer on a silicon substrate; forming source/drain regions in the substrate that are self-aligned to the outside edges of the composite gate electrode |
| 07/21/1998 | US5783475 Method of forming a spacer |
| 07/21/1998 | US5783474 Forming masking layer, patterning, doping, etching. growing insulation layer over surface, depositing polysilicon layer on top of insulation layer, masking, patterning, doping; fewer masking steps |
| 07/21/1998 | US5783473 An oxidation masking layer on first conductive layer is formed before performing thermal oxidation so that the asperity structure is reduced |
| 07/21/1998 | US5783472 Method of making an SOI transistor |
| 07/21/1998 | US5783471 Structure and method for improved memory arrays and improved electrical contacts in semiconductor devices |
| 07/21/1998 | US5783469 Method for making nitrogenated gate structure for improved transistor performance |
| 07/21/1998 | US5783458 Providing silicon substrate, doping with p-type dopant, exposing drain, source to nitrogen, oxygen, growing oxides |
| 07/21/1998 | US5783457 Method of making a flash memory cell having an asymmetric source and drain pocket structure |
| 07/21/1998 | US5783253 Two barium strontium titanate layers, each with different composition, one serves as nucleation layer |
| 07/21/1998 | US5782665 Fabricating array with storage capacitor between cell electrode and dark matrix |
| 07/16/1998 | WO1998031050A1 Improved active matrix esd protection and testing scheme |
| 07/16/1998 | DE19738166A1 Gallium arsenide metal-semiconductor FET with gate electrode |
| 07/16/1998 | DE19701055A1 Halbleiter-Drucksensor A semiconductor pressure sensor |
| 07/16/1998 | DE19700734A1 Sensor production from wafer stack |
| 07/16/1998 | CA2529996A1 Nitride semiconductor device |
| 07/15/1998 | EP0853344A1 Semiconductor device employing tunnel effect and method of fabricating the same |
| 07/15/1998 | EP0853337A1 Method and mold for manufacturing semiconductor device, semiconductor device, and method for mounting the device |
| 07/15/1998 | EP0853254A2 Liquid crystal display |
| 07/15/1998 | EP0852814A1 Quantum well mos transistor and methods for making same |
| 07/15/1998 | EP0852813A2 Integrated circuit device with embedded flash memory and method for manufacturing same |
| 07/15/1998 | EP0852726A1 Monolithic acceleration transducer |
| 07/15/1998 | EP0852617A1 Apparatus and methods for active programmable matrix devices |
| 07/15/1998 | EP0752165B1 Quantum-layer structure |
| 07/15/1998 | CN1187907A Electrically erasable and programmable non-volatile storage location |
| 07/14/1998 | US5781389 Transistor protection circuit |
| 07/14/1998 | US5781255 Active matrix display device using aluminum alloy in scanning signal line or video signal line |
| 07/14/1998 | US5781254 Active matrix LCD having a non-conductive light shield layer |
| 07/14/1998 | US5780996 Alternating current generator and schottky barrier diode |
| 07/14/1998 | US5780929 A silicon surface cleaned by bombardment with low energy ions |
| 07/14/1998 | US5780922 An aluminum oxide passivation layer, germanium channel region covering passivation layer, gate oxide of aluminum over channel, a controlling layer in contact with passivation layer to control excess arsenic migration to passivation |
| 07/14/1998 | US5780917 Composite controlled semiconductor device and power conversion device using the same |
| 07/14/1998 | US5780912 On a semiconductor substrate |
| 07/14/1998 | US5780911 Thin film transistor and method for fabricating the same |
| 07/14/1998 | US5780909 Semiconductor memory device with a two-layer top gate |
| 07/14/1998 | US5780908 An intermetallic layer sandwiched between the refractory metal film and nitrides barrier layer; nondiffusing, no leakage |
| 07/14/1998 | US5780903 Method of fabricating a lightly doped drain thin-film transistor |
| 07/14/1998 | US5780902 Semiconductor device having LDD structure with pocket on drain side |
| 07/14/1998 | US5780901 Semiconductor device with side wall conductor film |
| 07/14/1998 | US5780900 Thin film silicon-on-insulator transistor having an improved power dissipation, a high break down voltage, and a low on resistance |
| 07/14/1998 | US5780899 For use in an integrated circuit |
| 07/14/1998 | US5780896 Semiconductor device having shallow impurity region without short-circuit between gate electrode and source and drain regions and process of fabrication thereof |
| 07/14/1998 | US5780895 Forward overvoltage protection circuit for a vertical semiconductor component |
| 07/14/1998 | US5780894 Nonvolatile semiconductor memory device having stacked-gate type transistor |
| 07/14/1998 | US5780893 Non-volatile semiconductor memory device including memory transistor with a composite gate structure |
| 07/14/1998 | US5780892 Flash E2 PROM cell structure with poly floating and control gates |
| 07/14/1998 | US5780891 Nonvolatile floating gate memory with improved interploy dielectric |
| 07/14/1998 | US5780889 Non-volatile memory cell |
| 07/14/1998 | US5780888 Semiconductor device with storage node |
| 07/14/1998 | US5780887 Conductivity modulated MOSFET |
| 07/14/1998 | US5780886 Field effect transistor having a ferroelectric bismuth titanate layer as the gate insulator |