Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/1998
08/05/1998CN1189921A Tunnelling device and method of producing a tunnelling device
08/05/1998CN1189920A Insulating film for use in semiconductor device
08/05/1998CN1189918A Method of mfg. a pic(power integrated circuit) device, and a pic device manufactured by such a method
08/05/1998CN1189699A Field-effect transistor and its mfg. method
08/05/1998CN1189698A Thin-film transistor and its mfg. method, array substrate and liquid crystal display
08/05/1998CN1189697A Semiconductor device having improved transistor structure and capable of greatly reducing its occupied area and method of manufacturing the same
08/05/1998CN1189696A Transistor, transistor array, method for manufacturing transistor array, and nonvolatile semiconductor memory
08/05/1998CN1189694A Semiconductor device having N mos and P mos transmistors on common substrate
08/05/1998CN1189688A Process for fabricating semiconductor device without separation between silicide layer and insulating layer
08/05/1998CN1039464C Semiconductordevice and method for mfg. the same
08/04/1998US5789971 Protection circuit and method for power transistors, voltage regulator using the same
08/04/1998US5789968 Controllable semiconductor switch
08/04/1998US5789820 Method for manufacturing heat radiating resin-molded semiconductor device
08/04/1998US5789802 Shallow
08/04/1998US5789801 Varactor with electrostatic barrier
08/04/1998US5789800 Bipolar transistor having an improved epitaxial base region
08/04/1998US5789796 Programmable anti-fuse device and method for manufacturing the same
08/04/1998US5789791 Multi-finger MOS transistor with reduced gate resistance
08/04/1998US5789790 Semiconductor device
08/04/1998US5789786 High-Voltage CMOS transistors on a standard CMOS wafer
08/04/1998US5789782 Lateral semiconductor device with maximized breakdown voltage, and methods of fixing potential of same
08/04/1998US5789780 Transistor with source and drain regions within the semiconductor substrate detached or laterally displaced from the transistor gate
08/04/1998US5789779 IGFET circuit preventing parasitic diode current
08/04/1998US5789778 Semiconductor device with gate insulator film
08/04/1998US5789777 Non-volatile memory having multi-bit data cells with double layered floating gate structure
08/04/1998US5789771 Camel-gate field-effect transistor with multiple modulation-doped channels
08/04/1998US5789770 Hexagonal architecture with triangular shaped cells
08/04/1998US5789769 Semiconductor device having an improved trench isolation
08/04/1998US5789767 Compound semiconductor device
08/04/1998US5789762 Semiconductor active matrix circuit
08/04/1998US5789761 Thin-film transistor array having light shading film and antireflection layer
08/04/1998US5789760 Multiquantum barrier Schottky junction device
08/04/1998US5789312 Method of fabricating mid-gap metal gates compatible with ultra-thin dielectrics
08/04/1998US5789311 Depositing electrode on silicon carbide semiconductor; hetaing
08/04/1998US5789310 Doping with an inert gas; forming intakes, drains
08/04/1998US5789303 Method of adding on chip capacitors to an integrated circuit
08/04/1998US5789301 Method for reducing extrinsic base-collector capacitance
08/04/1998US5789298 High performance mosfet structure having asymmetrical spacer formation and method of making the same
08/04/1998US5789297 Method of making EEPROM cell device with polyspacer floating gate
08/04/1998US5789294 Manufacturing method of nonvolatile memory
08/04/1998US5789293 Nonvolatile memory device and manufacturing method thereof
08/04/1998US5789292 Laser processing method, method for forming a flash memory, insulated gate semiconductor device and method for forming the same
08/04/1998US5789286 Method of making a CMOS structure with FETS having isolated wells with merged depletions
08/04/1998US5789284 Method for fabricating semiconductor thin film
08/04/1998US5789283 Lightly doped drain
08/04/1998US5789282 Method for fabricating thin film transistor
08/04/1998US5789277 Method of making chalogenide memory device
08/04/1998US5789269 Field implant for semiconductor device
08/04/1998US5789266 Metal oxide semiconductor field effect transistor (MOSFET) fabrication method
07/1998
07/30/1998WO1998033218A1 Semiconductor diodes having low forward conduction voltage drop and low reverse current leakage
07/30/1998WO1998033209A1 Method for obtaining a thin film, in particular semiconductor, comprising a protected ion zone and involving an ion implantation
07/30/1998DE19802541A1 Semiconductor device especially MESFET
07/30/1998DE19703206A1 Drucksensor-Bauteil mit Schlauchanschluß Pressure sensor component with hose connection
07/30/1998DE19702531A1 In-plane-gate transistor production by CMOS compatible process
07/29/1998EP0855748A1 Heterojunction field effect transistor and method of fabricating the same
07/29/1998EP0855747A1 Vertical pnp transistor
07/29/1998EP0855614A1 Thin film device having coating film, liquid crystal panel, electronic apparatus and method of manufacturing the thin film device
07/29/1998EP0855584A2 Pressure transducer apparatus and method for making
07/29/1998EP0855451A1 Wiring film, sputter target for forming the wiring film and electronic component using the same
07/29/1998EP0687384B1 A quantum well device
07/29/1998EP0349633B1 Polysilicon thin film process
07/29/1998CN1189234A 半导体存储器 Semiconductor memory
07/29/1998CN1188991A Semiconductor device and method for manufacturing same
07/29/1998CN1188990A Static induction device
07/29/1998CN1188982A Semiconductor device and method for producing same
07/28/1998US5787037 Non-volatile memory device which supplies erasable voltage to a flash memory cell
07/28/1998US5787036 Flash memory including improved transistor cells and a method of programming the memory
07/28/1998US5787035 Memory cell array
07/28/1998US5787034 Nonvolatile semiconductor memory having a stress relaxing voltage applied to erase gate during data write
07/28/1998US5786988 Integrated circuit chips made bendable by forming indentations in their back surfaces flexible packages thereof and methods of manufacture
07/28/1998US5786722 Integrated RF switching cell built in CMOS technology and utilizing a high voltage integrated circuit diode with a charge injecting node
07/28/1998US5786707 Method of detecting possible defect of liquid crystal panel
07/28/1998US5786638 Semiconductor device with moisture impervious film
07/28/1998US5786634 Semiconductor device
07/28/1998US5786632 Semiconductor package
07/28/1998US5786625 Moisture resistant semiconductor device
07/28/1998US5786622 Bipolar transistor with a ring emitter
07/28/1998US5786620 Fermi-threshold field effect transistors including source/drain pocket implants and methods of fabricating same
07/28/1998US5786619 Depletion mode power MOSFET with refractory gate and method of making same
07/28/1998US5786617 High voltage charge pump using low voltage type transistors
07/28/1998US5786616 Semiconductor integrated circuit having an SOI structure, provided with a protective circuit
07/28/1998US5786615 Junction field-effect transistor (JFET) semiconductor integrated circuit device including JFET
07/28/1998US5786614 Separated floating gate for EEPROM application
07/28/1998US5786613 Integrated overvoltage protection device having electrodes separated by a gas-filled cavity
07/28/1998US5786612 Semiconductor device comprising trench EEPROM
07/28/1998US5786610 Field effect transistor
07/28/1998US5786604 Element-isolated hydrogen-terminated diamond semiconductor device and its manufacturing method
07/28/1998US5786603 Reducing excessive voltage drop at n-n hetero-interface lengthening service life of device
07/28/1998US5786269 II-VI group compound semiconductor device and method for manufacturing the same
07/28/1998US5786268 Antifuses; gate arrays
07/28/1998US5786266 Multi cut wafer saw process
07/28/1998US5786258 Method of making an SOI transistor
07/28/1998US5786257 Method of fabricating a LDD transistor
07/28/1998US5786255 Method of forming a metallic oxide semiconductor
07/28/1998US5786254 Hot-carrier reliability in submicron MOS devices by oxynitridation
07/28/1998US5786252 Method of manufacturing a semiconductor device, and semiconductor device manufactured by such a method
07/28/1998US5786251 Method for producing a channel region layer in a voltage controlled semiconductor device
07/28/1998US5786245 Method for forming a stable SRAM cell using low backgate biased threshold voltage select transistors
07/28/1998US5786244 Method for making GaAs-InGaAs high electron mobility transistor
07/28/1998US5786242 Forming a layer of silicon oxide on single crystal silicon substrate, a layer of non-single crystalline silicon is coated over oxide, crystallizing, forming semiconductor integrated circuit, bonding insulating substrate, and etching
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