Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/1998
10/13/1998US5821583 Trenched DMOS transistor with lightly doped tub
10/13/1998US5821581 Non-volatile memory cell structure and process for forming same
10/13/1998US5821580 MOS device having a trench gate structure
10/13/1998US5821578 Semiconductor switching element, programmable functional device, and operation methods for programmable functional device
10/13/1998US5821577 Graded channel field effect transistor
10/13/1998US5821576 Silicon carbide power field effect transistor
10/13/1998US5821575 Compact self-aligned body contact silicon-on-insulator transistor
10/13/1998US5821574 Charge-coupled device having different light-receiving region and charge isolation layer structures
10/13/1998US5821573 Field effect transistor having an arched gate and manufacturing method thereof
10/13/1998US5821565 Thin film transistor structure having increased on-current
10/13/1998US5821564 TFT with self-align offset gate
10/13/1998US5821563 Semiconductor device free from reverse leakage and throw leakage
10/13/1998US5821560 Thin film transistor for controlling a device such as a liquid crystal cell or electroluminescent element
10/13/1998US5821559 Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
10/13/1998US5821173 Introducing chromium and/or a chromium compound only in the region of the silicon oxide film
10/13/1998US5821172 Oxynitride incorporated into gate dielectric; nitrogen free silicon oxide formed between substrate and oxynitride layer; carrier mobility preserved, reduced boron penetration, reliablity; increased oxidation rate
10/13/1998US5821171 Article comprising a gallium layer on a GaAs-based semiconductor, and method of making the article
10/13/1998US5821159 Thin film transistor substrate having low resistive and chemical resistant electrode interconnections and method of forming the same
10/13/1998US5821155 Adding gaseous compounds of group 3 and group 5 elements; simultaneously adding silicon iodide as dopant gas with a carrier; low growth temperatures; dopant concentration control
10/13/1998US5821154 Plated heat sink structure; gold layer, gallium arsenide substrate, tungsten layer
10/13/1998US5821149 Method of fabricating a heterobipolar transistor
10/13/1998US5821148 Method of fabricating a segmented emitter low noise transistor
10/13/1998US5821147 Integrated circuit fabrication
10/13/1998US5821144 Lateral DMOS transistor for RF/microwave applications
10/13/1998US5821143 Fabrication methods for nonvolatile memory devices including extended sidewall electrode
10/13/1998US5821138 Forming multilayer of first and second insulating films, an amorophous silicon films, holding a metal element that enhance the crystallization of silicon, crystallization by heat treatment, forming thin film transistor and sealing film
10/13/1998US5821137 Thin film semiconductor device including a driver and a matrix circuit
10/13/1998US5821133 Method of manufacturing active matrix substrate
10/13/1998US5821005 Ferroelectrics thin-film coated substrate and manufacture method thereof and nonvolatile memory comprising a ferroelectrics thinfilm coated substrate
10/13/1998US5820650 Optical processing apparatus and optical processing method
10/08/1998WO1998044567A1 Nonvolatile semiconductor storage device and method for manufacturing the same and semiconductor device and method for manufacturing the same
10/08/1998WO1998044566A1 Display
10/08/1998WO1998044565A1 A scalable flash eeprom memory cell and array
10/08/1998WO1998044561A1 A thermal conducting trench in a semiconductor structure and method for forming the same
10/08/1998WO1998044560A1 Multiple gated mosfet for use in dc-dc converter
10/08/1998WO1998044548A1 Method of forming a contact opening adjacent to an isolation trench in a semiconductor substrate
10/08/1998WO1998044522A2 Capacitor structure
10/08/1998WO1998044498A1 Electric or electronic component and application as non volatile memory and device with surface acoustic waves
10/08/1998WO1998024163A3 Multiple magnetic tunnel structures
10/08/1998WO1998021755A3 Patterns of electrically conducting polymers and their application as electrodes or electrical contacts
10/08/1998DE19747589A1 Nonvolatile memory device
10/08/1998DE19711481A1 Verfahren zur Herstellung eines vertikalen MOS-Transistors Process for the preparation of a vertical MOS transistor
10/07/1998EP0869612A1 The pre-positioned photoelectric transducer driven insulated-gate bipolar transistor
10/07/1998EP0869611A1 Faster switching GaAs fet switches by illumination with high intensity light
10/07/1998EP0869560A2 Power diode
10/07/1998EP0869559A2 Leistungsdiode
10/07/1998EP0869558A2 Insulated gate bipolar transistor with reduced electric fields
10/07/1998EP0869557A2 Ferroelectric memory cell and method of making the same
10/07/1998EP0869552A2 DRAM with asymmetrical channel doping
10/07/1998EP0868750A1 Current-limiting semiconductor arrangement
10/07/1998EP0868749A1 Silicon bipolar junction transistor having reduced emitter line width
10/07/1998EP0868745A2 Method of producing a neuron mos transistor on the basis of a cmos process
10/07/1998EP0868742A2 Process for producing an mos transistor
10/07/1998EP0808513A4 TRENCH FIELD EFFECT TRANSISTOR WITH REDUCED PUNCH-THROUGH SUSCEPTIBILITY AND LOW R DSon?
10/07/1998EP0777910A4 Process for manufacture of mos gated device with reduced mask count
10/07/1998CN1195425A Method of producing EEPROM semiconductor structure
10/07/1998CN1195199A Field effect transistor and method of manufacturing same
10/07/1998CN1195198A Semiconductor integrated-circuit device having n-type and p-type semiconductor conductive regions formed in contact with each other
10/07/1998CN1195197A Non-volatile memory device and method for fabricating same
10/07/1998CN1195195A Semiconductor device comprising high density integrated circuit having large number of insulated gate field effect transistors
10/07/1998CN1195193A Semiconductor device and method of manufacturing same
10/07/1998CN1195189A Method for producing semiconductor device
10/07/1998CN1195121A Method for manufacturing electrical optical elements
10/07/1998CN1195117A 显示板 Dashboard
10/06/1998US5818761 Non-volatile semiconductor memory device capable of high speed programming/erasure
10/06/1998US5818760 Method and device for supplying negative programming voltages to non-volatile memory cells in a non-volatile memory device
10/06/1998US5818753 Electrically-erasable and programmable ROM with pulse-driven memory cell
10/06/1998US5818550 Color display device
10/06/1998US5818549 Active matrix substrate and manufacturing method of the same
10/06/1998US5818282 Bridge circuitry comprising series connection of vertical and lateral MOSFETS
10/06/1998US5818099 MOS high frequency switch circuit using a variable well bias
10/06/1998US5818098 Semiconductor device having a pedestal
10/06/1998US5818093 Semiconductor device having a movable gate
10/06/1998US5818092 Polycide film
10/06/1998US5818091 Semiconductor device with selectively patterned connection pad layer for increasing a contact margin
10/06/1998US5818085 Body contact for a MOSFET device fabricated in an SOI layer
10/06/1998US5818084 Pseudo-Schottky diode
10/06/1998US5818083 Semiconductor memory device having a floating gate
10/06/1998US5818082 E2 PROM device having erase gate in oxide isolation region in shallow trench and method of manufacture thereof
10/06/1998US5818081 Semiconductor device
10/06/1998US5818079 Semiconductor integrated circuit device having a ceramic thin film capacitor
10/06/1998US5818078 Semiconductor device having a regrowth crystal region
10/06/1998US5818077 Field effect transistor including a plurality of electrode units arranged in a row
10/06/1998US5818076 Transistor and semiconductor device
10/06/1998US5818075 Charge transfer device
10/06/1998US5818074 Smooth switching thyristor
10/06/1998US5818073 Semiconductor device including doped spontaneously formed superlattice layer
10/06/1998US5818070 Electro-optical device incorporating a peripheral dual gate electrode TFT driver circuit
10/06/1998US5818067 Thin film transistor and method for fabricating thereof
10/06/1998US5817570 Semiconductor structure for an MOS transistor and method for fabricating the semiconductor structure
10/06/1998US5817564 Depth of diffusion
10/06/1998US5817563 Method for fabricating an LDD transistor
10/06/1998US5817561 Insulated gate semiconductor device and method of manufacture
10/06/1998US5817560 Ultra short trench transistors and process for making same
10/06/1998US5817558 Method of forming a T-gate Lightly-Doped Drain semiconductor device
10/06/1998US5817556 Method of manufacturing a semiconductor memory device including memory cells having connected source regions
10/06/1998US5817551 Semiconductor device and method of manufacturing the same
10/06/1998US5817550 Method for formation of thin film transistors on plastic substrates
10/06/1998US5817549 Method for manufacturing a semiconductor device
10/06/1998US5817547 Method for fabricating a metal oxide semiconductor field effect transistor having a multi-layered gate electrode
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