Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/1999
03/09/1999US5880514 Protection circuit for semiconductor device
03/09/1999US5880513 Asymmetric snubber resistor
03/09/1999US5880512 Programmable interconnect structures and programmable integrated circuits
03/09/1999US5880511 Low-voltage punch-through transient suppressor employing a dual-base structure
03/09/1999US5880509 Semiconductor pressure sensor and its manufacturing method
03/09/1999US5880508 MOSFET with a high permitivity gate dielectric
03/09/1999US5880507 Semiconductor device with improved pn junction breakdown voltage
03/09/1999US5880505 Solid solution with high heat resistance and low sheet resistance
03/09/1999US5880502 Low and high voltage CMOS devices and process for fabricating same
03/09/1999US5880501 Semiconductor integrated circuit and manufacturing method of the same
03/09/1999US5880500 Semiconductor device and process and apparatus of fabricating the same
03/09/1999US5880499 Memory cell of a nonvolatile semiconductor device
03/09/1999US5880498 Flash read only memory
03/09/1999US5880484 Lateral resonant tunneling transistor having two non-symmetric quantum dots
03/09/1999US5880483 Active layer comprising groups 3-5 materials; field effect transistors
03/09/1999US5880371 Pressure transducer apparatus and method for making
03/09/1999US5880040 Gate dielectric based on oxynitride grown in N2 O and annealed in NO
03/09/1999US5880038 Forming a resist mask on an upper portion of an aluminum gate electrode, anodizing to form an oxide on unmasked regions; forming silicon oxide film, hydrofluoric acid etching to form contact holes to semiconductor and wire simultaneously
03/09/1999US5880022 Self-aligned contact window
03/09/1999US5880015 Method of producing stepped wall interconnects and gates
03/09/1999US5880008 Selectively etching a portion of the semiconductor substrate with the first silicon nitride film and sidewall spacer used as a mask; forming thin field oxide in a self-aligned manner relative to polysilicon layer; floating gate memory devices
03/09/1999US5880001 Method for forming epitaxial pinched resistor having reduced conductive cross sectional area
03/09/1999US5880000 Method for fabricating an NPN transistor of minimum surface
03/09/1999US5879999 Method of manufacturing an insulated gate semiconductor device having a spacer extension
03/09/1999US5879998 Adaptively controlled, self-aligned, short channel device and method for manufacturing same
03/09/1999US5879997 Method for forming self aligned polysilicon contact
03/09/1999US5879996 Implanting germanium (ge) layer under existing gate oxide and growing the silicide in a low temperature furnace; efficient manufacture of complementary metal oxide semiconductor (cmos) with stable gate oxide over a silicon-ge transistor channel
03/09/1999US5879995 High-voltage transistor and manufacturing method therefor
03/09/1999US5879994 Self-aligned method of fabricating terrace gate DMOS transistor
03/09/1999US5879993 Nitride spacer technology for flash EPROM
03/09/1999US5879992 Method of fabricating step poly to improve program speed in split gate flash
03/09/1999US5879990 Semiconductor device having an embedded non-volatile memory and method of manufacturing such a semicondutor device
03/09/1999US5879989 Method for fabricating nonvolatile memory device using disposable layer
03/09/1999US5879983 Semiconductor device and method for manufacturing the same
03/09/1999US5879982 Methods of forming integrated circuit memory devices having improved electrical interconnects therein
03/09/1999US5879979 Method of manufacturing a semiconductor device containing CMOS elements
03/09/1999US5879978 Semiconductor device and method of fabricating the same
03/09/1999US5879977 Deposition of metal catalyst promotes crystallization of amorphous silicon film
03/09/1999US5879976 Thin film transistor and method for producing the same
03/09/1999US5879974 Using a metal which promotes crystallization of silicon and an amorphous silicon film
03/09/1999US5879973 Method for fabricating thin-film transistor
03/09/1999US5879970 Process of growing polycrystalline silicon-germanium alloy having large silicon content
03/09/1999US5879969 Anodic oxidation of electrode pattern by feeding an electric field through wiring on substrate
03/09/1999US5879968 Process for manufacture of a P-channel MOS gated device with base implant through the contact window
03/09/1999US5879967 Methods forming power semiconductor devices having latch-up inhibiting regions
03/09/1999US5879960 Manufacturing method of thin film diode for liquid crystal display device
03/09/1999US5879958 Method of producing an electro-optical device
03/09/1999US5879957 Method for manufacturing a capacitor
03/09/1999US5879956 Forming insulation film having contact hole, forming electrodes including perovskite structures, etching, forming spacers
03/09/1999US5879447 Semiconductor device and its fabricating method
03/04/1999WO1999010939A2 A method of manufacturing a field-effect transistor substantially consisting of organic materials
03/04/1999WO1999010925A1 Vertical interconnect process for silicon segments with thermally conductive epoxy preform
03/04/1999WO1999010924A1 Reduction of charge loss in nonvolatile memory cells by phosphorous implantation into pecvd nitride/oxynitride films
03/04/1999WO1999010920A1 METHOD FOR THERMAL SELF-HEALING OF AN SiC SEMICONDUCTOR AREA DOPED BY MEANS OF IMPLANTATION AND A SiC BASED SEMICONDUCTOR COMPONENT
03/04/1999WO1999010919A1 Silicon carbide substrate, process for producing the same, and semiconductor element containing silicon carbide substrate
03/04/1999WO1998056020A3 Method for arrangement of a buried capacitor, and a buried capacitor arranged according to said method
03/04/1999DE19832803A1 Gate dielectric for field effect transistor, especially MISFET
03/04/1999DE19819438A1 Semiconductor device production by the salicide technique
03/04/1999DE19757327C1 Single electron device especially a single electron transistor device
03/04/1999DE19747996C1 Ruthenium-doped semi-insulating III-V compound semiconductor epitaxy
03/04/1999DE19739498C1 Cascade MOS thyristor
03/04/1999DE19733350C1 MOSFET production process uses only three photolithography or masking steps
03/04/1999CA2269912A1 Silicon carbide substrate, process for producing the same, and semiconductor element containing silicon carbide substrate
03/03/1999EP0899835A1 Semiconductor Laser Device
03/03/1999EP0899796A2 Light emitting semiconductor device using nanocrystals
03/03/1999EP0899794A2 High frequency diode and method for fabricating it
03/03/1999EP0899793A2 Transistor having localized source and drain extensions and method
03/03/1999EP0899792A2 Transistor with structured sidewalls and method
03/03/1999EP0899791A2 Trench-gated MOSFET with bidirectional voltage clamping
03/03/1999EP0899790A2 DRAM cell array and method of producing the same
03/03/1999EP0899784A2 Semiconductor device and method of fabricating thereof
03/03/1999EP0899783A2 Circuit arrangement with at least four transistors and method of fabrication
03/03/1999EP0899782A2 Method of manufacturing a field effect transistor
03/03/1999EP0898808A1 Three-terminal power mosfet switch for use as synchronous rectifier or voltage clamp
03/03/1999EP0898785A1 Active matrix displays and method of making
03/03/1999CN1209648A Method for mfg. of semiconductor device
03/03/1999CN1209647A Method for mfg. of dual-polar state induction transistor
03/03/1999CN1209646A Mfg. method for semiconductor device
03/03/1999CN1209609A Method for simulating collision ionization phenomenon in semiconductor device
03/03/1999CN1209606A Device analog method
03/02/1999US5877986 Multi-state Flash EEprom system on a card that includes defective cell substitution
03/02/1999US5877980 Nonvolatile memory device having a program-assist plate
03/02/1999US5877977 Nonvolatile memory based on metal-ferroelectric-metal-insulator semiconductor structure
03/02/1999US5877943 Clustering adapter for spherical shaped devices
03/02/1999US5877646 Method for the turn-on regulation of an IGBT and apparatus for carrying out the method
03/02/1999US5877558 Gallium nitride-based III-V group compound semiconductor
03/02/1999US5877540 Epitaxial-base bipolar transistor
03/02/1999US5877539 Bipolar transistor with a reduced collector series resistance
03/02/1999US5877538 Bidirectional trench gated power MOSFET with submerged body bus extending underneath gate trench
03/02/1999US5877535 CMOS semiconductor device having dual-gate electrode construction and method of production of the same
03/02/1999US5877534 Method of forming electrostatic discharge protection device for integrated circuit
03/02/1999US5877532 Semiconductor device and method of manufacturing the same
03/02/1999US5877531 MIS type semiconductor device and method for manufacturing same
03/02/1999US5877530 Formation of gradient doped profile region between channel region and heavily doped source/drain contact region of MOS device in integrated circuit structure using a re-entrant gate electrode and a higher dose drain implantation
03/02/1999US5877529 Mosfet termination design and core cell configuration to increase breakdown voltage and to improve device ruggedness
03/02/1999US5877528 Structure to provide effective channel-stop in termination areas for trenched power transistors
03/02/1999US5877527 Semiconductor device and method of producing the same
03/02/1999US5877526 Semiconductor device having polysilicon thin-film
03/02/1999US5877524 Non-volatile semiconductor memory device
03/02/1999US5877523 Multi-level split- gate flash memory cell
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