Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/1998
09/01/1998US5801418 High voltage power integrated circuit with level shift operation and without metal crossover
09/01/1998US5801417 Self-aligned power MOSFET device with recessed gate and source
09/01/1998US5801416 FET having gate insulating film of nonuniform thickness and asymmetrical source and drain structures
09/01/1998US5801415 Non-volatile-memory cell for electrically programmable read only memory having a trench-like coupling capacitors
09/01/1998US5801414 Non-volatile semiconductor memory having programming region for injecting and ejecting carriers into and from a floating gate
09/01/1998US5801411 Integrated capacitor with reduced voltage/temperature drift
09/01/1998US5801410 Ferroelectric capacitors including extended electrodes
09/01/1998US5801409 Multiphase charge coupled device solid-state image sensors
09/01/1998US5801408 Insulated gate semiconductor device and method of manufacturing the same
09/01/1998US5801405 High frequency
09/01/1998US5801401 Flash memory with microcrystalline silicon carbide film floating gate
09/01/1998US5801399 Semiconductor device with antireflection film
09/01/1998US5801398 Field effect transistor
09/01/1998US5801397 Device having a self-aligned gate electrode wrapped around the channel
09/01/1998US5801395 Thin film transistor having a buffering pad layer for a liquid crystal display and a method for manufacturing the same
09/01/1998US5801313 Capacitive sensor
09/01/1998US5801095 Production worthy interconnect process for deep sub-half micrometer back-end-of-line technology
09/01/1998US5801091 Method for current ballasting and busing over active device area using a multi-level conductor process
09/01/1998US5801089 Method of forming stacked devices
09/01/1998US5801081 Semiconductor device and method of manufacturing semiconductor device
09/01/1998US5801080 Method of manufacturing semiconductor substrate having total and partial dielectric isolation
09/01/1998US5801078 Forming barrier isolation layer and electrode on surface of semiconductor substrate, then doping and thermal annealing
09/01/1998US5801076 Method of making non-volatile memory device having a floating gate with enhanced charge retention
09/01/1998US5801075 Forming protective dielectrics on the metal spacers which are isolated from the gate electrodes
09/01/1998US5801069 Method of fabricating thin film piezoelectric device
09/01/1998US5800794 Clathrate compounds and processes for production thereof
09/01/1998CA2125052C Integrated device having mos transistors which enable positive and negative voltages swings
08/1998
08/27/1998WO1998037630A1 Power device with a short-circuit detector
08/27/1998WO1998037584A1 Solid state power-control device using group iii nitrides
08/27/1998WO1998037583A1 Method for manufacturing semiconductor device
08/27/1998DE19807569A1 Bidirectional thyristor e.g. photothyristor for mains AC line
08/27/1998DE19749345A1 MOSFET semiconductor component with SOI structure
08/27/1998DE19735555A1 Bipolar transistor production
08/27/1998DE19723176C1 Semiconductor device with alternate p-n and Schottky junctions
08/27/1998DE19706789A1 CMOS circuit with all-round dielectric insulation of source drain zones
08/26/1998EP0860884A2 Vertical junction field effect transistors
08/26/1998EP0860883A1 Transistor and method of manufacturing the same
08/26/1998EP0860863A2 A laminated structure of polysilicon and tungsten silicide and a method of forming the same
08/26/1998EP0860028A1 Varactor with electrostatic barrier
08/26/1998EP0860027A1 Charge coupled device, and method of manufacturing such a device
08/26/1998EP0860026A1 Process for reducing defects in oxide layers on silicon carbide
08/26/1998EP0860024A2 Circuit structure having a flip-mounted matrix of devices
08/26/1998EP0764335B1 Electrode structure and method for anodically-bonded capacitive sensors
08/26/1998CN2289302Y Floating metal-oxide-semiconductor field effect transistor
08/26/1998CN1191641A Monolithic class D amplifier
08/26/1998CN1191394A Insulated-gate bipolar transistor driven by pre-photo-electric transfer component
08/25/1998US5798744 Liquid crystal display apparatus
08/25/1998US5798562 Semiconductor device having an isolation layer and two passivation layers with edges that are not aligned with each other
08/25/1998US5798561 Semiconductor device
08/25/1998US5798560 Semiconductor integrated circuit having a spark killer diode
08/25/1998US5798555 Enhancement-depletion logic based on Ge mosfets
08/25/1998US5798554 MOS-technology power device integrated structure and manufacturing process thereof
08/25/1998US5798553 Trench isolated FET devices, and method for their manufacture
08/25/1998US5798552 Transistor suitable for high voltage circuit
08/25/1998US5798550 Vertical type semiconductor device and gate structure
08/25/1998US5798549 Conductive layer overlaid self-aligned MOS-gated semiconductor devices
08/25/1998US5798548 Semiconductor device having multiple control gates
08/25/1998US5798543 Semiconductor element structure with stepped portion for formation of element patterns
08/25/1998US5798540 Electronic devices with InAlAsSb/AlSb barrier
08/25/1998US5798539 Bipolar transistor for very high frequencies
08/25/1998US5798538 IGBT with integrated control
08/25/1998US5798534 Manufacture of electronic devices comprising thin-film circuitry
08/25/1998US5798296 Method of fabricating a gate having a barrier of titanium silicide
08/25/1998US5798293 Wafer bonding technique: two amorphous layers are placed face to face and bonded by heating; piece is annealed at such a high temperature that the material of the amorphous layer is allowed to flow for relaxing a 3c-sic-layer; epitaxial growth
08/25/1998US5798291 Method of making a semiconductor device with recessed source and drain
08/25/1998US5798287 Method for forming a power MOS device chip
08/25/1998US5798279 Method of fabricating non-volatile memories with overlapping layers
08/25/1998US5798278 Method of forming raised source/drain regions in an integrated circuit
08/25/1998US5798277 Forming a base with an epitaxial growth method; concurrently performing a device isolation process, a collector-base self-alignment and a selective collector ion implantation process using a single mask
08/25/1998US5797560 Method and device for continuously feeding film
08/20/1998WO1998036457A1 Bipolar transistor with reduced vertical collector resistance
08/20/1998WO1998036456A1 Communicating between stations
08/20/1998DE19806555A1 Semiconductor device including Zener diode
08/20/1998DE19736981A1 Semiconductor component of low loss and high breakdown voltage
08/20/1998DE19733974A1 MOSFET structure with first conductivity-type semiconductor substrate
08/20/1998DE19731956A1 Semiconductor device with numerous transistors, loads, or capacitive elements
08/20/1998DE19730957A1 Semiconductor component with insulating film on semiconductor substrate
08/20/1998DE19706282A1 Transistor having zones of different dopant concentration
08/20/1998DE19705728A1 Schottky diode with semiconductor substrate of first doping type esp. for signal processing
08/20/1998DE19705519A1 Silicon carbide product for vertical electronic device structure
08/20/1998DE19705516A1 Silicon carbide product for microelectronic device
08/20/1998DE19704534A1 Halbleiterkörper Semiconductor body
08/19/1998EP0859415A2 Insulated gate field effect transistor and manufacturing method of the same
08/19/1998EP0859414A1 Semiconductor power device
08/19/1998EP0859405A2 Method of manufacturing a raised capacitor electrode
08/19/1998EP0859402A2 Method of manufacturing a MOS electrode
08/19/1998EP0859401A2 Semiconductor device with a self-aligned structure
08/19/1998EP0858673A2 Electron devices comprising a thin-film electron emitter
08/19/1998EP0789935A4 Heterojunction energy gradient structure
08/19/1998EP0630523B1 Circuit construction for controlling saturation of a transistor
08/19/1998CN1190825A Oscilation circuit and delay circuit
08/19/1998CN1190803A Semiconductor device and productive method thereof
08/19/1998CN1190801A Semiconductor and making method thereof
08/19/1998CN1190800A Semiconductor memory device with ferroelectric memory capacitor
08/19/1998CN1190798A Semiconductor and making method thereof
08/19/1998CN1190788A Method of fabricating integrated microstructures of semiconductor material
08/19/1998CN1039559C Semiconductor device and mfg. method
08/18/1998US5796801 Charge coupled device with high charge transfer efficiency
08/18/1998US5796671 Dynamic random access memory
08/18/1998US5796290 Temperature detection method and circuit using MOSFET
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