| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 03/02/1999 | US5877518 Semiconductor device and inverter apparatus using the semiconductor device |
| 03/02/1999 | US5877515 SiC semiconductor device |
| 03/02/1999 | US5877513 Semiconductor integrated circuit |
| 03/02/1999 | US5877512 Liquid crystal display device having uniform parasitic capacitance between pixels |
| 03/02/1999 | US5877511 Single-electron controlling magnetoresistance element |
| 03/02/1999 | US5877421 Acceleration sensor |
| 03/02/1999 | US5877419 Method for estimating the service life of a power semiconductor component |
| 03/02/1999 | US5877095 Method of fabricating a semiconductor device having a silicon nitride film made of silane, ammonia and nitrogen |
| 03/02/1999 | US5877085 Method of manufacturing semiconductor device |
| 03/02/1999 | US5877083 Method of manufacturing a semiconductor device |
| 03/02/1999 | US5877082 Method of manufacturing semiconductor device without plasma damage |
| 03/02/1999 | US5877077 Heat resistance |
| 03/02/1999 | US5877057 Method of forming ultra-thin oxides with low temperature oxidation |
| 03/02/1999 | US5877056 Ultra-short channel recessed gate MOSFET with a buried contact |
| 03/02/1999 | US5877049 Method for forming advanced transistor structures with optimum short channel controls for high density/high performance integrated circuits |
| 03/02/1999 | US5877047 Lateral gate, vertical drift region transistor |
| 03/02/1999 | US5877046 Methods of forming semiconductor-on-insulator substrates |
| 03/02/1999 | US5877044 Method of making MOS-gated semiconductor devices |
| 03/02/1999 | US5877041 Self-aligned power field effect transistor in silicon carbide |
| 03/02/1999 | US5876901 Method for fabricating semiconductor device |
| 03/02/1999 | US5876861 Stress reduced sputtered nickel layer |
| 02/25/1999 | WO1999009600A1 Semiconductor device and method for manufacturing the same |
| 02/25/1999 | WO1999009599A2 Vertical interconnect process for silicon segments with dielectric isolation |
| 02/25/1999 | WO1999009598A1 Semiconductor structure comprising an alpha silicon carbide zone, and use of said semiconductor structure |
| 02/25/1999 | WO1999009597A1 High voltage component and method for making same |
| 02/25/1999 | WO1999009585A1 Semiconductor substrate and semiconductor device |
| 02/25/1999 | WO1999009576A1 A carbon film for field emission devices |
| 02/25/1999 | WO1998053505A3 Lateral mos semiconductor device |
| 02/25/1999 | WO1998053491A3 Manufacture of a semiconductor device with a mos transistor having an ldd structure |
| 02/25/1999 | DE19825524A1 Thin film transistor useful for a SRAM cell |
| 02/25/1999 | DE19810534A1 Multiple axis acceleration sensor |
| 02/25/1999 | DE19733921A1 Bauelement mit Gleichrichtungsfunktion mit Hilfe von Ladungstransport durch Ionen Component with rectification function using charge transport through ion |
| 02/25/1999 | DE19732912A1 Cascade MOS thyristor |
| 02/24/1999 | EP0898315A1 Tunneling magnetoresistive element, and magnetic sensor using the same |
| 02/24/1999 | EP0898306A2 Method of forming a self-aligned refractory metal silicide layer |
| 02/24/1999 | EP0898304A2 Asymmetric channel doped MOS structure and method for same |
| 02/24/1999 | EP0897598A1 Semiconductor device with a programmable semiconductor element |
| 02/24/1999 | EP0897594A1 Control of junction depth and channel length using generated interstitial gradients to oppose dopant diffusion |
| 02/24/1999 | EP0827604B1 Constant current source with an eeprom cell |
| 02/24/1999 | CN1209222A Active rectifier having minimal energy losses |
| 02/24/1999 | CN1208967A Semiconductor device and mfg. method of the same |
| 02/24/1999 | CN1208957A Method of mfg. split-gate flash memory cell |
| 02/24/1999 | CN1208956A Integrated circuits and mfg. methods |
| 02/23/1999 | US5875129 Nonvolatile semiconductor memory device including potential generating circuit |
| 02/23/1999 | US5875085 Lithium electronic-mechanical automatic protection system (LEAPS) |
| 02/23/1999 | US5875009 In a liquid crystal display device |
| 02/23/1999 | US5874774 Flat package semiconductor device |
| 02/23/1999 | US5874772 Semiconductor device |
| 02/23/1999 | US5874771 Punch-through resistor |
| 02/23/1999 | US5874769 Mosfet isolation structure with planar surface |
| 02/23/1999 | US5874768 Semiconductor device having a high breakdown voltage |
| 02/23/1999 | US5874767 Semiconductor device including a lateral power device |
| 02/23/1999 | US5874766 Semiconductor device having an oxynitride film |
| 02/23/1999 | US5874765 Semiconductor device and method for fabricating the same |
| 02/23/1999 | US5874761 Semiconductor memory device with three-dimensional cluster distribution |
| 02/23/1999 | US5874760 4F-square memory cell having vertical floating-gate transistors with self-aligned shallow trench isolation |
| 02/23/1999 | US5874759 Flash memory cell and method of fabricating the same |
| 02/23/1999 | US5874757 Dual-packed capacitor DRAM cell structure |
| 02/23/1999 | US5874755 Ferroelectric semiconductor device and method of manufacture |
| 02/23/1999 | US5874753 Field effect transistor |
| 02/23/1999 | US5874751 Insulated gate thyristor |
| 02/23/1999 | US5874750 Pressure-contact type semiconductor device |
| 02/23/1999 | US5874746 TFT, method of making and matrix displays incorporating the TFT |
| 02/23/1999 | US5874745 Thin film transistor with carbonaceous gate dielectric |
| 02/23/1999 | US5874353 Method of forming a self-aligned silicide device |
| 02/23/1999 | US5874352 Doping impurities at high concentration in upper section of gate electrode and low concentration in gate dielectric film to avoid shifting of transistor threshold voltage |
| 02/23/1999 | US5874348 Semiconductor wafer and method of manufacturing same |
| 02/23/1999 | US5874342 Process for forming MOS device in integrated circuit structure using cobalt silicide contacts as implantation media |
| 02/23/1999 | US5874341 Method of forming trench transistor with source contact in trench |
| 02/23/1999 | US5874340 Method for fabrication of a non-symmetrical transistor with sequentially formed gate electrode sidewalls |
| 02/23/1999 | US5874338 MOS-technology power device and process of making same |
| 02/23/1999 | US5874337 Method of forming eeprom cell with channel hot electron programming |
| 02/23/1999 | US5874331 Method of manufacturing CMOS semiconductor devices by forming a salicide structure |
| 02/23/1999 | US5874329 Method for artificially-inducing reverse short-channel effects in deep sub-micron CMOS devices |
| 02/23/1999 | US5874326 Method for fabricating thin film transistor |
| 02/23/1999 | CA2073030C Method of making silicon quantum wires |
| 02/18/1999 | WO1999008327A1 Component with rectifying function, fulfilled by means of charge transport by ions |
| 02/18/1999 | WO1999008326A1 Power transistor cell |
| 02/18/1999 | WO1999008325A2 Electrode means, with or without functional elements and an electrode device formed of said means |
| 02/18/1999 | WO1999008323A1 Rf power device having voltage controlled linearity |
| 02/18/1999 | WO1999008284A2 Novel multi-state memory |
| 02/18/1999 | WO1999008082A1 Temperature sensing circuits |
| 02/18/1999 | WO1998052230A3 Silicongermanium semiconductor device and a method of manufacturing the same |
| 02/18/1999 | WO1998034268A3 Fabrication method for reduced-dimension integrated circuits |
| 02/18/1999 | DE19738512A1 Doped diamond layer of a microelectronic component |
| 02/18/1999 | DE19735542A1 High voltage component especially ignition system thyristor |
| 02/18/1999 | DE19734985A1 Transistor component for power application |
| 02/18/1999 | DE19734509A1 Leistungstransistorzelle Power transistor cell |
| 02/18/1999 | DE19733559A1 MOSFET production |
| 02/18/1999 | DE19733410A1 Wafermarkierung Wafer marking |
| 02/18/1999 | DE19733351A1 Power MOSFET |
| 02/18/1999 | DE19732870A1 Semiconductor read-only memory cell, e.g. EEPROM cell |
| 02/17/1999 | EP0896736A1 High-voltage ldmos transistor device |
| 02/17/1999 | EP0896734A1 All-metal, giant magnetoresistive, solid-state component |
| 02/17/1999 | CN1208257A MIS semiconductor device and method of fabricating the same |
| 02/16/1999 | US5872734 Semiconductor nonvolatile memory device and computer system using the same |
| 02/16/1999 | US5872732 Nonvolatile memory |
| 02/16/1999 | US5872392 Semiconductor device and a method of fabricating the same |
| 02/16/1999 | US5872391 Bipolar junction transistors having an increased safe operating area |
| 02/16/1999 | US5872387 Deuterium-treated semiconductor devices |