| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 09/11/1998 | WO1998039797A1 Semiconductor and method relating to semiconductors |
| 09/11/1998 | WO1998029897A3 Well boosting threshold voltage rollup |
| 09/11/1998 | CA2283396A1 Semiconductor and method relating to semiconductors |
| 09/11/1998 | CA2281763A1 Strontium bismuth niobate tantalate ferroelectric thin film |
| 09/11/1998 | CA2251219A1 Thin film ferroelectric capacitors having improved memory retention through the use of essentially smooth bottom electrode structures |
| 09/09/1998 | EP0863554A2 Field-effect transistor |
| 09/09/1998 | EP0863553A1 Semiconductor device and production method thereof |
| 09/09/1998 | EP0863552A1 GaAs-based mosfet, and method of making same |
| 09/09/1998 | EP0863547A2 Gate unit for a hard-driven GTO |
| 09/09/1998 | EP0863539A1 Insulator-compound semiconductor interface-structure and methods of fabrication |
| 09/09/1998 | EP0863495A1 Display device |
| 09/09/1998 | EP0863392A1 A method of manufacturing pressure microsensors |
| 09/09/1998 | EP0863227A1 Method and apparatus for forming laminated thin films or layers |
| 09/09/1998 | EP0862793A2 Electronic devices including electrodes comprising chromium nitride and a method of manufacturing such devices |
| 09/09/1998 | EP0862787A1 Mos transistor and lateral insulating method of a mos transistor active region |
| 09/09/1998 | CN1192587A 场效应晶体管 FET |
| 09/09/1998 | CN1192586A Semiconductor device and method for mfg. same |
| 09/09/1998 | CN1192585A Semiconductor device and method of mfg. the same |
| 09/09/1998 | CN1192583A Semiconductor device, semiconductor equipment, and method for mfg. same |
| 09/08/1998 | US5805497 Semiconductor static random access memory cell with additional capacitor coupled to memory nodes and process of fabrication thereof |
| 09/08/1998 | US5805494 Trench capacitor structures |
| 09/08/1998 | US5805248 Active matrix liquid crystal display |
| 09/08/1998 | US5805013 Non-volatile memory device having a floating gate with enhanced charge retention |
| 09/08/1998 | US5804878 Electronic circuit |
| 09/08/1998 | US5804877 Gallium arsenide surface; layer of indium gallium arsenide with a layer of titanium tungstide in ohmic contact |
| 09/08/1998 | US5804868 Semiconductor device having planar junction |
| 09/08/1998 | US5804867 Thermally balanced radio frequency power transistor |
| 09/08/1998 | US5804864 High withstand voltage semiconductor device and manufacturing method thereof |
| 09/08/1998 | US5804863 Field effect transistors including side branch grooves and fabrication methods therefor |
| 09/08/1998 | US5804862 Semiconductor device having contact hole open to impurity region coplanar with buried isolating region |
| 09/08/1998 | US5804858 Body contacted SOI MOSFET |
| 09/08/1998 | US5804857 Semiconductor device with element window defined by closed loop conductor |
| 09/08/1998 | US5804856 Depleted sidewall-poly LDD transistor |
| 09/08/1998 | US5804855 Thin film transistors |
| 09/08/1998 | US5804854 Memory cell array |
| 09/08/1998 | US5804851 Semiconductor memory device and manufacturing method thereof |
| 09/08/1998 | US5804850 Ferroelectric based capacitor cell for use in memory systems |
| 09/08/1998 | US5804849 Compound semiconductor device and method of manufacture |
| 09/08/1998 | US5804848 Field effect transistor having multiple gate electrodes surrounding the channel region |
| 09/08/1998 | US5804847 Backside illuminated FET optical receiver with gallium arsenide species |
| 09/08/1998 | US5804846 Process for forming a self-aligned raised source/drain MOS device and device therefrom |
| 09/08/1998 | US5804842 Optically writing erasable conductive patterns at a bandgap-engineered heterojunction |
| 09/08/1998 | US5804841 Optical trigger thyristor and fabrication method |
| 09/08/1998 | US5804839 III-V nitride compound semiconductor device and method for fabricating the same |
| 09/08/1998 | US5804838 Thin film transistors |
| 09/08/1998 | US5804837 Polysilicon thin-film transistor and method for fabricating the same |
| 09/08/1998 | US5804834 Semiconductor device having contact resistance reducing layer |
| 09/08/1998 | US5804497 Doping n-channel region of silicon substrate with first boron and the second boron imuprities, doping p-channel region with first and second phosphorus impurities, forming gate dielectric then conductive layer, patterning conductive layer |
| 09/08/1998 | US5804496 Semiconductor device having reduced overlap capacitance and method of manufacture thereof |
| 09/08/1998 | US5804487 Depositing epitaxial layers on substrate, depositing photoresist, patterning, developing, depositing metal to form ohmic contact, lifting off metal |
| 09/08/1998 | US5804486 Process for manufacturing a high-frequency bipolar transistor structure |
| 09/08/1998 | US5804483 Heating to diffuse p-type dopants into silicon carbide layer which is doped with n-type dopants |
| 09/08/1998 | US5804476 Method of forming BiCMOS devices having mosfet and bipolar sections therein |
| 09/08/1998 | US5804475 Molecular beam epitaxy to form a single quantum well layer effect device |
| 09/08/1998 | US5804474 Method for forming a V-shaped gate electrode in a semiconductor device, and the structure of the electrode |
| 09/08/1998 | US5804473 Introducing a metallic element into amorphous silicon film to form intermetallic compound and atleast one nonmetallic element of group 6a and 7a or nitrogen is also doped, thermal annealing to crystallize amorphous film |
| 09/08/1998 | US5804472 Method of making spacer-type thin-film polysilicon transistor for low-power memory devices |
| 09/08/1998 | US5804457 Method for manufacturing a force sensor |
| 09/08/1998 | US5804454 Heating and evaporating silicon raw materials, reacting evaporated materials and oxygen in vapor phase, generating silicon dioxide, adhering silicon dioxide to substrate, forming second film |
| 09/08/1998 | US5804004 Stacked devices for multichip modules |
| 09/08/1998 | US5803961 Integrated circuits having mixed layered superlattice materials and precursor solutions for use in a process of making the same |
| 09/05/1998 | CA2231206A1 Field effect transistor |
| 09/03/1998 | WO1998038682A1 Semiconductor device with a programmable semiconductor element |
| 09/03/1998 | WO1998038681A1 Field effect controllable semiconductor component |
| 09/03/1998 | WO1998038674A1 Methods and apparatus for forming a high dielectric film and the dielectric film formed thereby |
| 09/03/1998 | WO1998028786A3 Method of manufacturing a glass-covered semiconductor device and a glass-covered semiconductor device |
| 09/03/1998 | DE19738324C1 DMOS power semiconductor transistor |
| 09/03/1998 | DE19730759C1 Vertical power MOSFET |
| 09/02/1998 | EP0862224A1 Semiconductor device |
| 09/02/1998 | EP0862223A2 Power high-frequency field effect transistor |
| 09/02/1998 | EP0862222A1 Semiconductor device and process for manufacturing the same |
| 09/02/1998 | EP0862221A1 Semiconductor device |
| 09/02/1998 | EP0862220A1 Semiconductor switching device and a power converter using the same and a drive method therefor |
| 09/02/1998 | EP0862204A1 Method for fabricating a capacitor for a semiconductor structure |
| 09/02/1998 | EP0862201A2 Method of manufacturing a thin film transistor |
| 09/02/1998 | EP0862077A2 Liquid crystal device, manufacturing method thereof and projection type display device |
| 09/02/1998 | EP0758489B1 Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices, and methods of fabricating same |
| 09/02/1998 | CN1192056A Optoelectronic device with multiple quantum trap structure |
| 09/02/1998 | CN1192055A Method of producing semiconductor member and method of producing solar cell |
| 09/02/1998 | CN1192053A MOSFET and manufacturing method thereof |
| 09/02/1998 | CN1192052A Electrostatic induction device and its making method |
| 09/02/1998 | CN1192044A Thin membrane semiconductor integrated circuit and its manufacturing method |
| 09/02/1998 | CN1192039A Method of manufacturing semiconductor device |
| 09/01/1998 | US5801993 Nonvolatile memory device |
| 09/01/1998 | US5801836 Doped layers of silicon carbide; reduced risk of voltage breakdown |
| 09/01/1998 | US5801573 Protected switch having a power semiconductor device |
| 09/01/1998 | US5801572 Power MOSFET |
| 09/01/1998 | US5801557 High voltage drivers which avoid -Vs failure modes |
| 09/01/1998 | US5801445 Electrode interposed between insulation film and wire which is bonded thereto; crack prevention |
| 09/01/1998 | US5801444 Multilevel electronic structures containing copper layer and copper-semiconductor layers |
| 09/01/1998 | US5801431 Enclosed in a plastic housing |
| 09/01/1998 | US5801429 Semiconductor device |
| 09/01/1998 | US5801428 MOS transistor for biotechnical applications |
| 09/01/1998 | US5801427 Accurate pattern configuration |
| 09/01/1998 | US5801426 Field effect transistor with improved source/drain diffusion regions having an extremely small capacitance |
| 09/01/1998 | US5801425 Semiconductor device having a wiring layer including a TISI2, film of the C49 or C54 structure |
| 09/01/1998 | US5801424 MOSFET with reduced leakage current |
| 09/01/1998 | US5801422 Hexagonal SRAM architecture |
| 09/01/1998 | US5801420 Lateral semiconductor arrangement for power ICS |
| 09/01/1998 | US5801419 High frequency MOS device |