| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/26/1999 | US5863817 Semiconductor device |
| 01/26/1999 | US5863659 Silicon wafer, and method of manufacturing the same |
| 01/26/1999 | US5863232 Fabrication method of micro tip for field emission display device |
| 01/26/1999 | CA2009068C Trench jfet integrated circuit elements |
| 01/24/1999 | CA2243776A1 Apparatus for limiting the holding current of a gate turn-off thyristor |
| 01/21/1999 | WO1999003204A1 Sr flip flop |
| 01/21/1999 | WO1999003156A1 II-VI SEMICONDUCTOR COMPONENT WITH AT LEAST ONE JUNCTION BETWEEN AN Se-CONTAINING LAYER AND A BeTe CONTAINING LAYER AND METHOD FOR PRODUCING SAID JUNCTION |
| 01/21/1999 | WO1999003152A2 Semiconductor device with memory capacitor and method of manufacturing such a device |
| 01/21/1999 | WO1999003151A2 A process for manufacturing ic-components to be used at radio frequencies |
| 01/21/1999 | DE19832297A1 Driver circuit for TFT LCD or projection display |
| 01/21/1999 | DE19827925A1 Silicon carbide semiconductor contacting process |
| 01/21/1999 | DE19730083A1 Verfahren zur gezielten Herstellung von n-leitenden Bereichen in Diamantschichten mittels Ionenimplantation A process for the targeted production of n-type regions in diamond layers by ion implantation |
| 01/21/1999 | CA2295990A1 A process for manufacturing ic-components to be used at radio frequencies |
| 01/20/1999 | EP0892443A2 Electrode of n-type nitride semiconductor, semiconductor device having the electrode, and method of fabricating the same |
| 01/20/1999 | EP0892441A2 Field effect transistor with recessed gate and a method for manufacturing the same |
| 01/20/1999 | EP0892440A1 Controllable conduction device |
| 01/20/1999 | EP0892438A2 Solid-state relay |
| 01/20/1999 | EP0892435A1 Integrated semiconductor transistor with current sensing |
| 01/20/1999 | EP0892429A2 Process for semiconductor device fabrication |
| 01/20/1999 | EP0892426A2 Multi-layer approach for optimizing ferroelectric film performance |
| 01/20/1999 | EP0892425A2 Fabriciation method for a platinum-metal pattern by means of a lift-off process |
| 01/20/1999 | EP0892424A2 Use of deuterated materials in semiconductor processing |
| 01/20/1999 | EP0891636A1 High-voltage mos transistor device |
| 01/20/1999 | EP0891635A1 REDUCING REVERSE SHORT-CHANNEL EFFECT WITH LIGHT DOSE OF P WITH HIGH DOSE OF As IN N-CHANNEL LDD |
| 01/20/1999 | CN1205802A Current-limiting semiconductor arrangement |
| 01/20/1999 | CN1205554A Trenched semiconductor device and method of fabricating the same |
| 01/19/1999 | US5862464 Pin diode variable attenuator |
| 01/19/1999 | US5862081 Multi-state flash EEPROM system with defect management including an error correction scheme |
| 01/19/1999 | US5862080 Multi-state flash EEprom system with defect handling |
| 01/19/1999 | US5861929 Active matrix color display with multiple cells and connection through substrate |
| 01/19/1999 | US5861675 Tungsten nitride fluorine film having good step coverage for a fine hole |
| 01/19/1999 | US5861659 Semiconductor device |
| 01/19/1999 | US5861657 Graded concentration epitaxial substrate for semiconductor device having resurf diffusion |
| 01/19/1999 | US5861653 Semiconductor device having gaseous isolating layer formed in inter-level insulating layer and process of fabrication thereof |
| 01/19/1999 | US5861651 Second layer of doped polycrystalline silicon separated by nitrogen doped silicon oxide |
| 01/19/1999 | US5861649 Trench-type semiconductor memory device |
| 01/19/1999 | US5861644 High-frequency traveling wave field-effect transistor |
| 01/19/1999 | US5861642 Semiconductor device having charge transfer device equipped with three semiconductor layers of same conductivity type with mutually different concentrations |
| 01/19/1999 | US5861640 Mesa bipolar transistor with sub base layer |
| 01/19/1999 | US5861639 Breakover-triggered dipole component having a controlled sensitivity |
| 01/19/1999 | US5861638 Insulated gate bipolar transistor |
| 01/19/1999 | US5861340 Method of forming a polycide film |
| 01/19/1999 | US5861336 High-frequency wireless communication system on a single ultrathin silicon on sapphire chip |
| 01/19/1999 | US5861335 Semiconductor fabrication employing a post-implant anneal within a low temperature high pressure nitrogen ambient to improve channel and gate oxide reliability |
| 01/19/1999 | US5861334 Method for fabricating semiconductor device having a buried channel |
| 01/19/1999 | US5861333 Thermal oxidation to create a silicon oxide film, removal of silicon nitride and silicon oxide pad by photolithography and dry etching, doping to create buried n+ type impurity |
| 01/19/1999 | US5861329 Forming a gate and silicon oxide layer on the silicon substrate, gate including polysilicon electrode and dielectric layer, nitriding, first ion implanting on gate, forming spacers of silicon dioxide, masking, ion implanting |
| 01/19/1999 | US5861326 Method for manufacturing semiconductor integrated circuit |
| 01/19/1999 | US5861059 Mixing hydrogen with raw material gas such as disilane to control facet formation; adsorption, termination, reducing surface free energy and anisotropy |
| 01/19/1999 | CA2125729C Continuous film feed device and method therefor |
| 01/14/1999 | WO1999001900A1 Bipolar power transistor and manufacturing method |
| 01/14/1999 | WO1999001899A1 Method of transferring thin film devices, thin film device, thin film integrated circuit device, active matrix substrate, liquid crystal display, and electronic apparatus |
| 01/14/1999 | DE19813457A1 Non-volatile memory production, e.g. EEPROM |
| 01/14/1999 | DE19810579A1 Integrated semiconductor switching arrangement and Zener diode e.g. for IC voltage regulator |
| 01/14/1999 | DE19807745A1 Semiconductor device with trench structure |
| 01/14/1999 | DE19807012A1 Non-volatile memory array of EEPROM cells |
| 01/14/1999 | DE19807010A1 Non-volatile memory e.g. EEPROM production |
| 01/14/1999 | DE19807009A1 Non volatile memory e.g. EEPROM production |
| 01/14/1999 | DE19729396A1 Elektrischer Kontakt für ein II-VI-Halbleiterbauelement und Verfahren zum Herstellen des elektrischen Kontaktes An electrical contact for a II-VI semiconductor device and method of manufacturing the electrical contact |
| 01/14/1999 | CA2294806A1 Bipolar power transistor and manufacturing method |
| 01/13/1999 | EP0890994A2 Power MOSFET and fabrication method |
| 01/13/1999 | EP0890993A2 MOS controllable power semiconductor device |
| 01/13/1999 | EP0890992A1 Interconnection track connecting by several levels of metal an isolated gate of a transistor to a discharge diode inside an integrated circuit and method of manufacturing such a track |
| 01/13/1999 | EP0890985A1 Array of electrically programmable non-volatile semiconductor memory cells comprising ROM memory cells |
| 01/13/1999 | EP0890978A1 Process for manufacturing high-sensitivity capacitive and resonant integrated sensors, particularly accelerometers and gyroscopes, and relative sensors |
| 01/13/1999 | EP0890191A1 Insulated gate bipolar transistor having a trench and a method for production thereof |
| 01/13/1999 | EP0890190A1 Corrosion resistant imager |
| 01/13/1999 | EP0890187A1 A method for producing a semiconductor device by the use of an implanting step and a device produced thereby |
| 01/13/1999 | EP0890186A2 A METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR LAYERS OF SiC BY THE USE OF AN IMPLANTING STEP AND A DEVICE PRODUCED THEREBY |
| 01/13/1999 | EP0890184A2 A METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE HAVING A SEMICONDUCTOR LAYER OF SiC AND SUCH A DEVICE |
| 01/13/1999 | EP0890183A2 A FIELD EFFECT TRANSISTOR OF SiC AND A METHOD FOR PRODUCTION THEREOF |
| 01/13/1999 | CN1204870A Method for fabricating nonvolatile memory device |
| 01/13/1999 | CN1204868A Method for fabricating nonvolatile memory device |
| 01/13/1999 | CN1041666C EEPROM and method for fabricating the same |
| 01/12/1999 | US5859759 Semiconductor pressure sensor module |
| 01/12/1999 | US5859683 Transmissive liquid crystal display apparatus and method for producing the same |
| 01/12/1999 | US5859679 Using C-shaped repair lines and method for repairing liquid crystal display using the same |
| 01/12/1999 | US5859677 Active matrix liquid crystal display device with independent potentials applied to the opposing electrode and the transistor side conductive light shielding film |
| 01/12/1999 | US5859469 Use of tungsten filled slots as ground plane in integrated circuit structure |
| 01/12/1999 | US5859465 High voltage, high speed |
| 01/12/1999 | US5859459 Semiconductor memory device and method of manufacturing the same |
| 01/12/1999 | US5859458 Having a controlled resistance value within predetermined range |
| 01/12/1999 | US5859457 High-voltage isolated high output impedance NMOS |
| 01/12/1999 | US5859456 Programmable integrated circuits utilizing lateral double diffused metal oxide semiconductor technology |
| 01/12/1999 | US5859455 Non-volatile semiconductor memory cell with control gate and floating gate and select gate located above the channel |
| 01/12/1999 | US5859454 Nonvolatile memory device |
| 01/12/1999 | US5859453 Flash EEPROM cell and method of making the same |
| 01/12/1999 | US5859452 Memory cell array having improved channel characteristics |
| 01/12/1999 | US5859447 Heterojunction bipolar transistor having heterostructure ballasting emitter |
| 01/12/1999 | US5859446 Diode and power converting apparatus |
| 01/12/1999 | US5859445 Electro-optical device including thin film transistors having spoiling impurities added thereto |
| 01/12/1999 | US5859444 Semiconductor device |
| 01/12/1999 | US5858867 Method of making an inverse-T tungsten gate |
| 01/12/1999 | US5858866 Geometrical control of device corner threshold |
| 01/12/1999 | US5858855 Forming a polysilicon layer of a first conductivity and higher impurity over a substrate; bonding a second single crystal silicon substrate of second conductivity and high impurity; heating; vertical insulated-gate bipolar transistor |
| 01/12/1999 | US5858853 Surface of doped amorphous silicon film is dry-etched by using mask layer as a selective etching mask; changing amorphous film into polycrystalline silicon film serving as a storage electrode |
| 01/12/1999 | US5858850 Process of fabricating integrated heterojunction bipolar device and MIS capacitor |
| 01/12/1999 | US5858844 Method for construction and fabrication of submicron field-effect transistors by optimization of poly oxide process |
| 01/12/1999 | US5858843 Low temperature method of forming gate electrode and gate dielectric |
| 01/12/1999 | US5858840 Implanting nitrogen ions in the first polysilicon layer of the cell and removing them from the area where the floating gate is to be formed |