Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/1998
12/16/1998CN1202006A Semiconductor integrated circuit device and method for making the same
12/16/1998CN1202004A Integrated circuit fabrication method
12/16/1998CN1202001A Method for making MIS transistor
12/16/1998CN1201999A Method of fabricating semiconductor device for preventing rising-up of siliside
12/16/1998CN1201998A Group III-V compound semiconductor wafer
12/15/1998US5850149 Evaluation method for semiconductor devices
12/15/1998US5850101 Bipolar transistor with extended emitter
12/15/1998US5850099 Thermally uniform transistor
12/15/1998US5850098 Uncooled amorphous YBaCuO thin film infrared detector
12/15/1998US5850094 Semiconductor device
12/15/1998US5850093 Uni-directional flash device
12/15/1998US5850092 Integrated circuit
12/15/1998US5850088 Teg for carrier lifetime evaluation
12/15/1998US5850042 Electrostatically force balanced silicon accelerometer
12/15/1998US5849643 Gate oxidation technique for deep sub quarter micron transistors
12/15/1998US5849634 Method of forming silicide film on silicon with oxygen concentration below 1018 /cm3
12/15/1998US5849630 Process for forming ohmic contact for III-V semiconductor devices
12/15/1998US5849614 Method of isolation by active transistors with grounded gates
12/15/1998US5849612 MOS poly-si thin film transistor with a flattened channel interface and method of producing same
12/15/1998US5849611 Method for forming a taper shaped contact hole by oxidizing a wiring
12/15/1998US5849605 Two-phase clock type charge coupled device having electrodes with tapered sidewalls and method for producing the same
12/15/1998US5849604 Method of manufacturing a semiconductor device
12/15/1998US5849601 Electro-optical device and method for manufacturing the same
12/15/1998US5849486 Methods for hybridization analysis utilizing electrically controlled hybridization
12/15/1998US5848541 Electrical/mechanical access control systems
12/10/1998WO1998056043A1 Semiconductor component and method for producing the same
12/10/1998WO1998056039A1 Utilizing inherent rectifying characteristics of a substrate in semiconductor devices
12/10/1998WO1998056035A1 Method of anodizing silicon substrate and method of producing acceleration sensor of surface type
12/10/1998WO1998056020A2 Method for arrangement of a buried capacitor, and a buried capacitor arranged according to said method
12/10/1998DE19825081A1 Semiconductor thin film useful for TFT
12/10/1998DE19824417A1 Schottky diode for integrated circuit
12/10/1998DE19800640A1 Hetero bipolar transistor
12/10/1998CA2292664A1 Method for arrangement of a buried capacitor, and a buried capacitor arranged according to said method
12/09/1998EP0883193A1 Zapping diode
12/09/1998EP0883192A2 Grooved semiconductor die for flip-chip sink attachment
12/09/1998EP0883188A1 CCD Solid-state imaging device
12/09/1998EP0883169A2 Method for fabricating a thin film transistor
12/09/1998EP0883168A2 Method for fabricating a semiconductor memory capacitor
12/09/1998EP0883167A2 Forming preferred orientation-controlled platinum film using oxygen
12/09/1998EP0882289A1 Lateral magneto-electronic device exploiting a quasi-two-dimensional electron gas
12/09/1998EP0733283B1 A protected switch
12/09/1998EP0721665B1 Semiconductor component with high breakdown voltage
12/09/1998EP0711416A4 Electrostatically force balanced silicon accelerometer
12/09/1998EP0597124B1 Method of fabricating a semiconductor nonvolatile storage device
12/09/1998CN1201291A Power conversion device having voltage driven switch element
12/09/1998CN1201264A Semiconductor device and mfg. method therefor
12/09/1998CN1201260A Grid unit of turn-off SCR for hard exciting grating
12/09/1998CN1201259A 半导体器件 Semiconductor devices
12/09/1998CN1201252A Capacitor and production technology thereof
12/09/1998CN1201250A Method for producing semiconductor device having capacitor
12/09/1998CN1201240A Non-volatile semiconductor storage
12/09/1998CN1201081A Method for preparing gallium nitride crystal
12/08/1998US5848085 Semiconductor quantum well structure and semiconductor device using the same
12/08/1998US5847996 Eeprom with split gate source side injection
12/08/1998US5847781 Liquid crystal display device comprises a light-blocking layer and a plurality of data lines which have a width that is larger than the width of a semiconductor layer
12/08/1998US5847780 Liquid crystal display and a manufacturing method thereof
12/08/1998US5847757 Method of driving solid-state image sensing device
12/08/1998US5847465 Contacts for semiconductor devices
12/08/1998US5847463 Local interconnect comprising titanium nitride barrier layer
12/08/1998US5847454 Electrically isolated released microstructures
12/08/1998US5847440 Bipolar transistor, semiconductor device having bipolar transistors
12/08/1998US5847437 Rare-earth element-doped III-V compound semiconductor schottky diodes and device formed thereby
12/08/1998US5847431 Reduced capacitance transistor with electro-static discharge protection structure
12/08/1998US5847428 Integrated circuit gate conductor which uses layered spacers to produce a graded junction
12/08/1998US5847427 Non-volatile semiconductor memory device utilizing an oxidation suppressing substance to prevent the formation of bird's breaks
12/08/1998US5847425 Dense vertical programmable read only memory cell structures and processes for making them
12/08/1998US5847419 Si-SiGe semiconductor device and method of fabricating the same
12/08/1998US5847417 Semiconductor device and method of manufacturing same
12/08/1998US5847416 Phototrigger thyristor
12/08/1998US5847414 Semiconductor device having a hetero-junction between SiC and a Group 3B-nitride
12/08/1998US5847413 Differential amplifier circuit and analog buffer
12/08/1998US5847411 Semiconductor device having a channel region including a vacancy-introduced polysilicon layer
12/08/1998US5847409 Semiconductor device with superlattice-structured graded buffer layer and fabrication method thereof
12/08/1998US5847407 Charge dissipation field emission device
12/08/1998US5847406 For sending data from a database to a computer output device
12/08/1998US5847381 Photoelectric conversion apparatus having a light-shielding shunt line and a light-shielding dummy line
12/08/1998US5846887 Method for removing defects by ion implantation using medium temperature oxide layer
12/08/1998US5846871 Integrated circuit fabrication
12/08/1998US5846869 Method of manufacturing semiconductor integrated circuit device
12/08/1998US5846867 Method of producing Si-Ge base heterojunction bipolar device
12/08/1998US5846866 Drain extension regions in low voltage lateral DMOS devices
12/08/1998US5846862 Semiconductor device having a vertical active region and method of manufacture thereof
12/08/1998US5846861 Method of manufacturing non-volatile semiconductor memory having erasing gate
12/08/1998US5846858 SOI-BiCMOS method
12/08/1998US5846857 CMOS processing employing removable sidewall spacers for independently optimized N- and P-channel transistor performance
12/08/1998US5846855 Thin-film transistor and method for fabricating same and liquid crystal display device
12/08/1998US5846849 Microstructure and single mask, single-crystal process for fabrication thereof
12/08/1998US5846847 Method of manufacturing a ferroelectric device
12/08/1998US5846846 Method for making a superconducting field-effect device with grain boundary channel
12/03/1998WO1998054762A1 Semiconductor device and method for driving the same
12/03/1998DE19824514A1 Diode especially p-n, Schottky or combination diode
12/03/1998DE19822523A1 Non-volatile semiconductor memory cell
12/03/1998DE19750897A1 Bipolar transistor with insulated gate (IGBT)
12/03/1998DE19744656A1 Semiconductor device with precisely dimensioned gate electrode
12/03/1998DE19730328C1 High-voltage-durable edge structure for semiconductor components e.g. MOSFETs
12/03/1998DE19721655C1 Thyristor mit Selbstschutz Thyristor with self-protection
12/02/1998EP0881693A1 Reference voltage in an integrated circuit
12/02/1998EP0881692A2 Insulated gate semiconductor device and method of manufacturing the same
12/02/1998EP0881691A2 Quantum dot device
12/02/1998EP0881690A1 Stabilized bipolar transistor with electric insulating elements
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