Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/1998
12/02/1998EP0881689A1 PNP lateral bipolar electronic device and corresponding manufacturing process
12/02/1998EP0881688A1 PNP lateral bipolar electronic device
12/02/1998EP0881687A1 Contact on P-type region
12/02/1998EP0881682A1 Overvoltage protection for an integrated MOS power transmission
12/02/1998EP0881681A1 Device protecting an integrated MOS device against voltage gradients
12/02/1998EP0881672A1 Isolation wall between power device
12/02/1998EP0881670A2 Sacrificial spacer for integrated circuit transistors
12/02/1998EP0881669A1 Manufacturing process of a germanium implanted HBT bipolar transistor
12/02/1998EP0881666A2 P-type nitrogen compound semiconductor and method of manufacturing same
12/02/1998EP0846337A4 Self-aligned isolation and planarization process for memory array
12/02/1998EP0818046A4 Capacitive absolute pressure sensor and method
12/02/1998CN1200577A Semiconductor device and method of mfg. same
12/02/1998CN1200576A Bilaterally controllable thyristor
12/02/1998CN1200574A Nonvolatile semiconductor memory and method of fabrication
12/02/1998CN1200573A Semiconductor memory device
12/02/1998CN1200566A Method of mfg. semiconductor device
12/01/1998US5844910 Flash-erase-type nonvolatile semiconductor storage device
12/01/1998US5844832 Cell array structure for a ferroelectric semiconductor memory and a method for sensing data from the same
12/01/1998US5844822 Simulation method for semiconductor device
12/01/1998US5844820 Method for simulating properties of material having periodically repeated structure and systems utilizing the same
12/01/1998US5844767 Level converting circuit for converting level of an input signal, internal potential generating circuit for generating internal potential, internal potential generating unit generating internal potential highly reliable semiconductor device and method of
12/01/1998US5844647 Liquid crystal display device
12/01/1998US5844641 Liquid crystal display device having storage capacitors and additional opaque electrodes
12/01/1998US5844321 Semiconductor device comprising a chip which is provided with a via opening and is soldered on a support, and method of realizing this device
12/01/1998US5844296 Space saving laser programmable fuse layout
12/01/1998US5844293 Semiconductor device with improved dielectric breakdown strength
12/01/1998US5844287 Monolithic sensor of fingerprints
12/01/1998US5844286 Semiconductor acceleration sensor
12/01/1998US5844285 Body contact structure for semiconductor device
12/01/1998US5844279 Single-electron semiconductor device
12/01/1998US5844278 Semiconductor device having a projecting element region
12/01/1998US5844277 Power MOSFETs and cell topology
12/01/1998US5844275 High withstand-voltage lateral MOSFET with a trench and method of producing the same
12/01/1998US5844274 Semiconductor device including an element isolating film having a flat upper surface
12/01/1998US5844273 Vertical semiconductor device and method of manufacturing the same
12/01/1998US5844272 Semiconductor component for high voltage
12/01/1998US5844271 Single layer polycrystalline silicon split-gate EEPROM cell having a buried control gate
12/01/1998US5844269 EEPROM cell having reduced capacitance across the layer of tunnel oxide
12/01/1998US5844268 Nonvolatile semiconductor memory device
12/01/1998US5844261 InAlGaP devices
12/01/1998US5844260 Compound semiconductor device constructed on a heteroepitaxial substrate
12/01/1998US5844259 Vertical conduction MOS controlled thyristor with increased IGBT area and current limiting
12/01/1998US5844258 Emitter switched thyristor
12/01/1998US5844256 Semiconductor device comprising polysilicon interconnection layers separated by insulation films
12/01/1998US5844253 High speed semiconductor phototransistor
12/01/1998US5844251 High aspect ratio probes with self-aligned control electrodes
12/01/1998US5844248 Circuit arrangement including photoelectric transducers for supplying a high voltage driving signal to an insulated gate bipolar transistor
12/01/1998US5843849 Semiconductor wafer etching process and semiconductor device
12/01/1998US5843828 Method for fabricating a semiconductor device with bipolar transistor
12/01/1998US5843827 Method of reducing dielectric damage from plasma etch charging
12/01/1998US5843826 Deep submicron MOSFET device
12/01/1998US5843825 Fabrication method for semiconductor device having non-uniformly doped channel (NUDC) construction
12/01/1998US5843812 Method of making a PMOSFET in a semiconductor device
12/01/1998US5843796 Method of making an insulated gate bipolar transistor with high-energy P+ im
12/01/1998US5843225 Process for fabricating semiconductor and process for fabricating semiconductor device
11/1998
11/28/1998CA2215448A1 Amplifier, signal source circuit and power supply
11/26/1998WO1998053506A1 Ferroelectric memory element and method of producing the same
11/26/1998WO1998053505A2 Lateral mos semiconductor device
11/26/1998WO1998053504A1 Single-electron memory component
11/26/1998WO1998053503A1 Self-protect thyristor
11/26/1998WO1998053502A1 Semiconductor device and method for manufacturing the same
11/26/1998WO1998053497A1 Method for mos transistor isolation
11/26/1998WO1998053492A1 Mofset in a trench and method of manufacture thereof
11/26/1998WO1998053491A2 Manufacture of a semiconductor device with a mos transistor having an ldd structure
11/26/1998WO1998053490A1 A one mask, power semiconductor device fabrication process
11/26/1998WO1998053489A2 Integrated circuit, components thereof and manufacturing method
11/26/1998WO1998028320A3 Affinity based self-assembly systems and devices for photonic and electronic applications
11/26/1998DE19744228C1 Mass flow sensor with membrane and attached resistance element
11/26/1998DE19734837A1 Self-aligning silicide manufacturing method
11/26/1998CA2291114A1 Integrated circuit, components thereof and manufacturing method
11/25/1998EP0880183A2 LDMOS power device
11/25/1998EP0880182A2 Bidirectional controllable thyristor
11/25/1998EP0880181A2 Low voltage-drop electrical contact for gallium (aluminium, indium) nitride
11/25/1998EP0880169A1 Method of fabricating a field-effect transistor utilizing an SOI substrate
11/25/1998EP0880165A1 A method of manufacturing an integrated circuit with MOS transistors having high breakdown voltages, and with precision resistors
11/25/1998EP0879482A1 Short channel fermi-threshold field effect transistors including drain field termination region and methods of fabricating same
11/25/1998EP0879481A1 Field effect controlled semiconductor component
11/25/1998EP0879478A1 Electrically erasable and programmable read only memory (eeprom) having multiple overlapping metallization layers
11/25/1998EP0879477A1 Electronic device manufacture by energy beam crystallisation
11/25/1998EP0683930B1 Buried-ridge ii-vi laser diode and method of fabrication
11/25/1998EP0659282B1 Color filter system for display panels
11/25/1998EP0548351B1 Method for producing integrated circuits having adjacent electrodes
11/25/1998CN1200197A Off-state gate-oxide field reduction in CMOS
11/25/1998CN1199930A Semiconductor device and its producing method
11/25/1998CN1199929A Semiconductor device having contact hole and method of manufacturing the same
11/25/1998CN1199923A Semiconductor substrate with semi-insulating polysilicon gettering site layer and process of fabrication thereof
11/24/1998US5841700 Source-coupling, split gate, virtual ground flash EEPROM array
11/24/1998US5841693 Non-volatile memory using field effect transistors having dual floating gates for storing two bits per cell
11/24/1998US5841197 Inverted dielectric isolation process
11/24/1998US5841181 Semiconductor apparatus having field limiting rings
11/24/1998US5841174 Semiconductor apparatus including semiconductor devices operated by plural power supplies
11/24/1998US5841173 MOS semiconductor device with excellent drain current
11/24/1998US5841172 SOI input protection circuit
11/24/1998US5841171 SOI Semiconductor devices
11/24/1998US5841170 Field effect transistor and CMOS element having dopant exponentially graded in channel
11/24/1998US5841168 High performance asymmetrical MOSFET structure and method of making the same
11/24/1998US5841167 MOS-technology power device integrated structure
11/24/1998US5841166 Lateral DMOS transistor for RF/microwave applications
11/24/1998US5841165 PMOS flash EEPROM cell with single poly
11/24/1998US5841163 Integrated circuit memory devices having wide and narrow channel stop layers
1 ... 1879 1880 1881 1882 1883 1884 1885 1886 1887 1888 1889 1890 1891 1892 1893 1894 1895 1896 1897 1898 1899 ... 2182