| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 10/06/1998 | US5817546 Process of making a MOS-technology power device |
| 10/06/1998 | US5817538 Method of making quantum box semiconductor device |
| 10/01/1998 | WO1998043302A1 Apparatus for simulating a biological neuron |
| 10/01/1998 | WO1998043299A2 SiC SEMICONDUCTOR ARRAY WITH ENHANCED CHANNEL MOBILITY |
| 10/01/1998 | WO1998043287A1 Semiconductor device and method for manufacturing the same |
| 10/01/1998 | WO1998043130A1 Liquid crystal device, electrooptic device, and projection display device using the same |
| 10/01/1998 | WO1998043057A1 Batch fabricated semiconductor thin-film pressure sensor and method of making same |
| 10/01/1998 | DE19744687A1 FET with short gate length |
| 10/01/1998 | DE19740947A1 Semiconductor component with first conductive substrate with main surface |
| 10/01/1998 | DE19713571C1 Controlled resistance for semi conductor differencing amplifier |
| 10/01/1998 | DE19713052A1 Kondensatorstruktur Capacitor structure |
| 10/01/1998 | DE19711483A1 Vertikaler MOS-Transistor und Verfahren zu dessen Herstellung Vertical MOS transistor and method of producing the |
| 10/01/1998 | CA2285478A1 Apparatus for simulating a biological neuron |
| 09/30/1998 | EP0867944A2 Compound semiconductor device and method for controlling characteristics of the same |
| 09/30/1998 | EP0867943A1 DMOS transistors with schottky diode body structure |
| 09/30/1998 | EP0867927A2 A capacitor and method for making a capacitor |
| 09/30/1998 | EP0867819A2 Method for designing integrated circuit device based on maximum load capacity |
| 09/30/1998 | EP0867751A2 Liquid crystal display panel |
| 09/30/1998 | EP0867038A1 Self-aligned trench isolation for memory array using sidewall spacers |
| 09/30/1998 | EP0866972A1 Accelerometer and method for making same |
| 09/30/1998 | CN1194726A Method for manufacturing thin film transistor, liquid crystal display and electronic device both produced by the method |
| 09/30/1998 | CN1194697A Thin film device having coating film, liquid crystal panel, electronic apparatus and method of manufacturing the thin film device |
| 09/30/1998 | CN1194466A 半导体器件 Semiconductor devices |
| 09/30/1998 | CN1194465A Semiconductor device and its producing method |
| 09/30/1998 | CN1194418A Analogue method for semiconductor integrated circuit |
| 09/29/1998 | US5815441 Non-volatile semiconductor memory device |
| 09/29/1998 | US5815436 Multi-level nonvolatile semiconductor memory device having improved programming level and read/write multi-level data circuits |
| 09/29/1998 | US5815359 Semiconductor device providing overvoltage protection against electrical surges of positive and negative polarities, such as caused by lightning |
| 09/29/1998 | US5815226 Electro-optical device and method of fabricating same |
| 09/29/1998 | US5815029 Semiconductor circuit and semiconductor circuit device |
| 09/29/1998 | US5814899 SOI-type semiconductor device with variable threshold voltages |
| 09/29/1998 | US5814885 Very dense integrated circuit package |
| 09/29/1998 | US5814874 Semiconductor device having a shorter switching time with low forward voltage |
| 09/29/1998 | US5814872 Integrated circuit and thin film integrated circuit |
| 09/29/1998 | US5814869 Short channel fermi-threshold field effect transistors |
| 09/29/1998 | US5814868 Transistor having an offset channel section |
| 09/29/1998 | US5814863 Substrate with gate electrode polysilicon/gate oxide stack covered with fluorinated silicon oxide layer and fluorinated corners of gate oxide layer |
| 09/29/1998 | US5814861 Symmetrical vertical lightly doped drain transistor and method of forming the same |
| 09/29/1998 | US5814860 Semiconductor IC device having first and second pads on surface of semiconductor chip |
| 09/29/1998 | US5814859 Semiconductor device |
| 09/29/1998 | US5814858 Vertical power MOSFET having reduced sensitivity to variations in thickness of epitaxial layer |
| 09/29/1998 | US5814857 EEPROM flash memory cell, memory device, and process for formation thereof |
| 09/29/1998 | US5814856 Variable and tunable VT MOSFET with poly and/or buried diffusion |
| 09/29/1998 | US5814854 Semiconductor memory cell |
| 09/29/1998 | US5814853 Sourceless floating gate memory device and method of storing data |
| 09/29/1998 | US5814843 Current collector transistors with gallium arsenide substrate and collector layers on supports |
| 09/29/1998 | US5814836 Semiconductor device requiring fewer masking steps to manufacture |
| 09/29/1998 | US5814835 Semiconductor device and method for fabricating the same |
| 09/29/1998 | US5814834 Thin film semiconductor device |
| 09/29/1998 | US5814727 Semiconductor accelerometer having reduced sensor plate flexure |
| 09/29/1998 | US5814554 Semiconductor device provided with a microcomponent having a fixed and a movable electrode |
| 09/29/1998 | US5814548 Process for making n-channel or p-channel permeable base transistor with a plurality layers |
| 09/29/1998 | US5814546 Method for producing a bipolar semiconductor device having SiC-based epitaxial layer |
| 09/29/1998 | US5814544 Forming a MOS transistor with a recessed channel |
| 09/29/1998 | US5814543 Method of manufacturing a semicondutor integrated circuit device having nonvolatile memory cells |
| 09/29/1998 | US5814540 Method for producing a transistor |
| 09/29/1998 | US5814539 Method of manufacturing an active matrix panel |
| 09/29/1998 | US5814537 Method of forming transistor electrodes from directionally deposited silicide |
| 09/29/1998 | US5814530 Producing a sensor with doped microcrystalline silicon channel leads |
| 09/29/1998 | US5814529 Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor |
| 09/24/1998 | WO1998042027A1 High performance display pixel for electronic displays |
| 09/24/1998 | WO1998042026A1 Vertical mos transistor and method of producing the same |
| 09/24/1998 | WO1998042025A1 Contact arrangement for a planar, integrable semiconductor arrangement and method for producing said contact arrangement |
| 09/24/1998 | WO1998042024A1 Iii-nitride superlattice structures |
| 09/24/1998 | WO1998042023A1 Method for cmos latch-up improvement by mev billi (buried implanted layer for lateral isolation) plus buried layer implantation |
| 09/24/1998 | WO1998042019A1 Trench-isolated bipolar devices |
| 09/24/1998 | WO1998042016A1 Method for producing a vertical mos-transistor |
| 09/24/1998 | WO1998042015A1 Method of producing a vertical mos transistor |
| 09/24/1998 | WO1998042009A1 Process for producing semiconductor integrated circuit device |
| 09/24/1998 | DE19811604A1 Semiconductor component with high breakdown/voltage and SOI substrate |
| 09/24/1998 | DE19811571A1 Semiconductor device especially FET production |
| 09/24/1998 | DE19811568A1 High voltage power semiconductor component with high voltage power element |
| 09/24/1998 | DE19811297A1 Avalanche breakdown resistant MOS devices |
| 09/24/1998 | DE19752434A1 DRAM with gate electrode with floating potential |
| 09/24/1998 | DE19746920A1 High speed high power semiconductor device especially FET |
| 09/24/1998 | DE19741928C1 Semiconductor component e.g. silicon carbide MOS transistor for smart power integrated circuit |
| 09/24/1998 | DE19711482A1 Verfahren zur Herstellung eines vertikalen MOS-Transistors Process for the preparation of a vertical MOS transistor |
| 09/24/1998 | DE19711438A1 Thyristor with short turn-off time |
| 09/24/1998 | DE19711165A1 Kontaktanordnung einer planaren, integrierbaren Halbleiteranordnung und Verfahren zur Herstellung dieser Kontaktanordnung Contact arrangement of a planar integrable semiconductor device and method for producing these contact arrangement |
| 09/24/1998 | DE19709724A1 Transistor especially MOS transistor production |
| 09/24/1998 | DE19709652A1 High speed power semiconductor diode |
| 09/24/1998 | DE19709002A1 Bridged doped zone manufacturing method e.g. for DMOS transistor |
| 09/24/1998 | DE19707513A1 Durch Feldeffekt steuerbares Halbleiterbauelement Field effect-controllable semiconductor component |
| 09/24/1998 | CA2283775A1 Trench-isolated bipolar devices |
| 09/23/1998 | EP0866466A2 Biasing scheme for reducing stress and improving reliability in EEPROM cells |
| 09/23/1998 | EP0865671A1 Normally conducting dual thyristor |
| 09/23/1998 | EP0865670A1 Semiconductor device with special emitter connection |
| 09/23/1998 | EP0570447B1 Method of making a bipolar transistor |
| 09/23/1998 | CN1194060A Metal insulator semiconductor structure with polarization-compatible buffer layer |
| 09/23/1998 | CN1193818A Semiconductor device |
| 09/23/1998 | CN1193817A MOSPET structure and fabrication method thereof |
| 09/23/1998 | CN1193816A Semiconductor device and method for manufacturing same |
| 09/22/1998 | US5812574 Quantum optical semiconductor device producing output optical emission with sharply defined spectrum |
| 09/22/1998 | US5812451 Nonvolatile semiconductor storage apparatus and method of writing data to the same |
| 09/22/1998 | US5812449 Flash EEPROM cell, method of manufacturing the same, method of programming and method of reading the same |
| 09/22/1998 | US5812442 Ferroelectric memory using leakage current and multi-numeration system ferroelectric memory |
| 09/22/1998 | US5812441 MOS diode for use in a non-volatile memory cell |
| 09/22/1998 | US5812364 Capacitor |
| 09/22/1998 | US5812231 Display unit |
| 09/22/1998 | US5811873 Diode having soft recovery characteristics over a wide range of operating conditions |