| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/12/1999 | US5858839 Method of making EPROM cell array using n-tank as common source |
| 01/12/1999 | US5858828 Use of MEV implantation to form vertically modulated N+ buried layer in an NPN bipolar transistor |
| 01/12/1999 | US5858827 Method of manufacturing MOS transistor device with improved threshold value control and reduced reverse short channel effect |
| 01/12/1999 | US5858825 Implanting phosphorus ions and boron ions into semiconductor substrate to form n-well, annealing, forming gate oxide |
| 01/12/1999 | US5858824 Method of forming fine electrode on semiconductor substrate |
| 01/12/1999 | US5858823 Selectively introducing a metal element into amorphous silicon film at different concentration to form metal silicide using laser as heat source to crystallize amorphous silicon |
| 01/12/1999 | US5858822 Method for producing semiconductor device |
| 01/12/1999 | US5858821 Method of making thin film transistors |
| 01/12/1999 | US5858819 Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device |
| 01/12/1999 | US5858811 Method for fabricating charge coupled device (CCD) as semiconductor device of MOS structure |
| 01/12/1999 | CA2059407C Gaas device fabrication and devices so produced |
| 01/07/1999 | WO1999000850A1 Power fet device |
| 01/07/1999 | WO1999000849A2 SiC SEMICONDUCTOR DEVICE COMPRISING A PN-JUNCTION AND A JUNCTION TERMINATION EXTENTION |
| 01/07/1999 | WO1999000833A1 Self-aligned power field effect transistor in silicon carbide |
| 01/07/1999 | WO1999000830A1 Improved deposition of tungsten nitride using plasma pretreatment in a chemical vapor deposition chamber |
| 01/07/1999 | WO1999000695A1 Wire electrode structure and liquid crystal display employing the structure |
| 01/07/1999 | WO1998044522A3 Capacitor structure |
| 01/07/1999 | EP0889531A1 MOS-controlled semiconductor device |
| 01/07/1999 | EP0889530A1 Closed transistor with small w/l ratios |
| 01/07/1999 | EP0889527A2 Semiconductor device with reduced number of trough holes and method of manufacturing the same |
| 01/07/1999 | EP0889520A1 Method of fabrication a non-volatile semiconductor memory device with shielded single polysilicon gate memory part |
| 01/07/1999 | EP0889513A2 Integrated circuit contact |
| 01/07/1999 | EP0889511A2 Trench contact process |
| 01/07/1999 | EP0889509A2 Lifetime control for semiconductor devices |
| 01/07/1999 | EP0889504A1 Method of manufacturing MOS transistor gates with a high germanium content |
| 01/07/1999 | EP0889503A2 Method of making a MOS-gated semiconductor device with a single diffusion |
| 01/07/1999 | EP0889502A2 Semiconductor structure with abrupt doping profile |
| 01/07/1999 | EP0888642A1 Semiconductor device |
| 01/07/1999 | EP0888640A2 Method of manufacturing a glass-covered semiconductor device and a glass-covered semiconductor device |
| 01/07/1999 | EP0888639A1 Field effect-controlled semiconductor component |
| 01/07/1999 | EP0888638A1 Semiconductor devices |
| 01/07/1999 | DE19829300A1 Capacitor for ferroelectric memory device |
| 01/07/1999 | DE19828606A1 Semiconductor yaw rate sensor |
| 01/07/1999 | DE19828391A1 LCD with counter-electrode on substrate extending in given direction |
| 01/07/1999 | DE19827935A1 Characteristic value simulator for semiconductor integrated circuit |
| 01/07/1999 | DE19823212A1 MOS transistor device with field screening isolation structure |
| 01/07/1999 | DE19805692A1 Semiconductor device with field screening isolation structure |
| 01/07/1999 | DE19802596A1 Semiconductor device especially bipolar transistor |
| 01/07/1999 | DE19726678A1 Passiver Halbleiterstrombegrenzer Passive semiconductor |
| 01/07/1999 | CA2296103A1 Self-aligned power field effect transistor in silicon carbide |
| 01/06/1999 | CN1204158A Semiconductor device having SOI structure and method for manufacturing the same |
| 01/06/1999 | CN1204157A Closed transistor with small W/L ratios |
| 01/06/1999 | CN1204156A Charge transfer device and manufacturing method thereof |
| 01/06/1999 | CN1204155A Semiconductor device with microwave bipolar transistor |
| 01/06/1999 | CN1204146A Semiconductor device and its manufacturing method |
| 01/06/1999 | CN1041579C Method and apparatus for stress relieved electronic module |
| 01/05/1999 | USRE36024 Electrostatic discharge protection circuit for semiconductor device |
| 01/05/1999 | US5856943 Scalable flash EEPROM memory cell and array |
| 01/05/1999 | US5856708 Polycide/poly diode SRAM load |
| 01/05/1999 | US5856704 Capacitor, integrated circuitry, diffusion barriers, and method for forming an electrically conductive diffusion barrier |
| 01/05/1999 | US5856700 Semiconductor device with doped semiconductor and dielectric trench sidewall layers |
| 01/05/1999 | US5856698 Second implanted matrix for agglomeration control and thermal stability |
| 01/05/1999 | US5856697 Integrated dual layer emitter mask and emitter trench for BiCMOS processes |
| 01/05/1999 | US5856696 Field effect transistor having dielectrically isolated sources and drains |
| 01/05/1999 | US5856693 Semiconductor integrated circuit device containing MOS protection circuit |
| 01/05/1999 | US5856692 Voltage-clamped power accumulation-mode MOSFET |
| 01/05/1999 | US5856690 Dielectric for amorphous silicon transistors |
| 01/05/1999 | US5856689 Semiconductor device including active matrix circuit |
| 01/05/1999 | US5856688 Integrated circuit memory devices having nonvolatile single transistor unit cells therein |
| 01/05/1999 | US5856687 Semiconductor device with connected source electrode pads at diagonal corners |
| 01/05/1999 | US5856685 Heterojunction field effect transistor |
| 01/05/1999 | US5856684 High power HFET with improved channel interfaces |
| 01/05/1999 | US5856683 MOS-controlled thyristor using a source cathode elecrode as the gate electrode of a MOSFET element |
| 01/05/1999 | US5856681 Semiconductor device |
| 01/05/1999 | US5856232 Method for fabricating T-shaped electrode and metal layer having low resistance |
| 01/05/1999 | US5856231 Process for producing high-resistance silicon carbide |
| 01/05/1999 | US5856228 Manufacturing method for making bipolar device having double polysilicon structure |
| 01/05/1999 | US5856226 Method of making ultra-short channel MOSFET with self-aligned silicided contact and extended S/D junction |
| 01/05/1999 | US5856218 Bipolar transistor formed by a high energy ion implantation method |
| 01/05/1999 | US5856215 Method of fabricating a CMOS transistor |
| 01/05/1999 | US5856209 Method of making compound semiconductor device having a reduced resistance |
| 01/05/1999 | US5856207 Method for producing a semiconductor laser |
| 01/05/1999 | CA2102079C A dielectric isolated high voltage semiconductor device |
| 12/30/1998 | WO1998059419A1 Forward body bias transistor circuits |
| 12/30/1998 | WO1998059377A1 Semiconductor current limiter |
| 12/30/1998 | WO1998059376A1 Bipolar switching transistor with reduced saturation |
| 12/30/1998 | WO1998059375A1 Non-volatile nano-cristalline storage cell |
| 12/30/1998 | WO1998059374A2 Insulated gate power semiconductor device having a semi-insulating semiconductor substrate |
| 12/30/1998 | WO1998059350A2 Electronically tunable capacitor |
| 12/30/1998 | EP0887857A1 Method of making an sram cell and structure |
| 12/30/1998 | EP0887843A1 Method of manufacturing a transistor with a silicon-germanium gate |
| 12/30/1998 | EP0887842A1 Field effect devices with improved gate insulator and method of manufacturing the same |
| 12/30/1998 | EP0886883A1 Electronic means, in particular for switching electronic currents, for high off-state voltages and with on-state power losses |
| 12/30/1998 | CN1203451A Semiconductor integrated circuit and method of compensating for device performance variations of semiconductor integrated circuit |
| 12/30/1998 | CN1203445A Method of manufacturing semiconductor device of which parasitic capacitance is decreased |
| 12/30/1998 | CN1203285A Method for making gallium nitride crystal |
| 12/30/1998 | CN1041472C Thin film transistor and method for fabricating same |
| 12/30/1998 | CN1041471C Semiconductor device and method for manufacturing |
| 12/29/1998 | US5854663 LCD device and method of forming the same in which a black matrix is formed on the orientation layer and covers the active semiconductor layer of a TFT |
| 12/29/1998 | US5854566 RESURF EDMOS transistor and high-voltage analog multiplexer circuit using the same |
| 12/29/1998 | US5854505 Process for forming silicon oxide film and gate oxide film for MOS transistors |
| 12/29/1998 | US5854502 Non-volatile memory cell having floating gate electrode and reduced bird's beak portions |
| 12/29/1998 | US5854501 Floating gate semiconductor device having a portion formed with a recess |
| 12/29/1998 | US5854496 Hydrogen-terminated diamond misfet and its manufacturing method |
| 12/29/1998 | US5854494 Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors |
| 12/29/1998 | US5854421 Semiconductor sensors and method for adjusting the output |
| 12/29/1998 | US5854139 Organic field-effect transistor and production thereof |
| 12/29/1998 | US5854122 Epitaxial layer for dissolved wafer micromachining process |
| 12/29/1998 | US5854117 Method of manufacturing a varicap diode, a varicap diode, a receiver device, and a TV receiver set |
| 12/29/1998 | US5854115 Formation of an etch stop layer within a transistor gate conductor to provide for reduction of channel length |