Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/1998
08/18/1998US5796166 Tasin oxygen diffusion barrier in multilayer structures
08/18/1998US5796157 High-frequency lateral PNP transistor
08/18/1998US5796156 High-voltage semiconductor device with integrated edge structure and associated manufacturing process
08/18/1998US5796151 Prevents deterioration of sheet resistance of tungsten layer
08/18/1998US5796149 Semiconductor memory using different concentration impurity diffused layers
08/18/1998US5796146 Semiconductor device having a lateral insulated gate biopolar transistor
08/18/1998US5796145 Semiconductor device composed of MOSFET having threshold voltage control section
08/18/1998US5796143 Trench transistor in combination with trench array
08/18/1998US5796142 SOI compact contactless flash memory cell
08/18/1998US5796140 Nonvolatile semiconductor memory device and a method of making the same
08/18/1998US5796139 Semiconductor device
08/18/1998US5796133 Semiconductor device capacitor having lower electrodes separated by low dielectric spacer material
08/18/1998US5796132 Semiconductor device
08/18/1998US5796131 Metal semiconductor field effect transistor (MESFET) device with single layer integrated metal
08/18/1998US5796127 High electron mobility transistor
08/18/1998US5796126 Hybrid schottky injection field effect transistor
08/18/1998US5796125 High breakdown voltage semiconductor device using trench grooves
08/18/1998US5796124 MOS gate controlled thyristor
08/18/1998US5796123 Semiconductor component mounted by brazing
08/18/1998US5796121 Thin film transistors fabricated on plastic substrates
08/18/1998US5796119 Silicon resonant tunneling
08/18/1998US5796116 Thin-film semiconductor device including a semiconductor film with high field-effect mobility
08/18/1998US5795821 Process for improving the interface union among dielectric materials in an integrated circuit manufacture
08/18/1998US5795817 MOS transistor adopting titanium-carbon-nitride gate electrode and manufacturing method thereof
08/18/1998US5795816 Method of fabricating semiconductor device
08/18/1998US5795808 Method for forming shallow junction for semiconductor device
08/18/1998US5795801 MethodS of fabricating profiled device wells for improved device isolation
08/18/1998US5795800 Integrated circuit fabrication method with buried oxide isolation
08/18/1998US5795795 Method of processing semiconductor device with laser
08/18/1998US5795793 Process for manufacture of MOS gated device with reduced mask count
08/18/1998US5795792 Method of manufacturing a semiconductor device having a trench structure
08/18/1998US5795458 Manufacturing method of thin film diode for liquid crystal display device
08/18/1998CA2116382C Micromechanical accelerometer and method for the production thereof
08/13/1998WO1998035390A1 Structure for increasing the maximum voltage of silicon carbide power transistors
08/13/1998WO1998035389A1 Silicon carbide power mesfet
08/13/1998WO1998035388A1 Aluminium gallium nitride (algan) based heterojunction bipolar transistor
08/13/1998WO1998035384A1 Oxide layer for a horizontal semiconductor part
08/13/1998WO1998035380A1 A method of fabricating cmos devices with ultra-shallow junctions and reduced drain area
08/13/1998WO1998035378A1 Manufacturing a heterobipolar transistor and a laser diode on the same substrate
08/13/1998WO1998035344A2 A nonvolatile memory structure
08/13/1998CA2280024A1 Manufacturing a heterobipolar transistor and a laser diode on the same substrate
08/12/1998EP0858113A1 Semiconductor device
08/12/1998EP0857943A2 Method for measuring epitaxial film thickness of multilayer epitaxial wafer
08/12/1998EP0857358A1 A wide bandgap semiconductor device having a heterojunction
08/12/1998EP0857354A1 A process for fabricating semiconductor devices with shallowly doped regions using dopant compounds containing elements of high solid solubility
08/12/1998EP0737365B1 Three-terminal gate-controlled semiconductor switching device with rectifying-gate
08/12/1998CN1190266A Transistor with composite structure and its manufacture
08/12/1998CN1190264A 半导体集成电路器件 The semiconductor integrated circuit device
08/11/1998US5793678 Parellel type nonvolatile semiconductor memory device method of using the same
08/11/1998US5793675 Method of evaluating the gate oxide of non-volatile EPROM, EEPROM and flash-EEPROM memories
08/11/1998US5793673 Double polysilicon EEPROM cell and corresponding manufacturing process and programming method
08/11/1998US5793452 Display device with jig and cooling means
08/11/1998US5793117 Semiconductor device and method of fabricating the same
08/11/1998US5793114 Self-aligned method for forming contact with zero offset to gate
08/11/1998US5793110 Semiconductor device
08/11/1998US5793109 Structure of ohmic electrode for semiconductor by atomic layer doping
08/11/1998US5793099 Semiconductor device
08/11/1998US5793090 Integrated circuit having multiple LDD and/or source/drain implant steps to enhance circuit performance
08/11/1998US5793089 Integrated circuit
08/11/1998US5793088 Structure for controlling threshold voltage of MOSFET
08/11/1998US5793084 Transistor for providing protection from electrostatic discharge
08/11/1998US5793083 Method for designing shallow junction, salicided NMOS transistors with decreased electrostatic discharge sensitivity
08/11/1998US5793082 Self-aligned gate sidewall spacer in a corrugated FET
08/11/1998US5793080 Nonvolatile memory device
08/11/1998US5793078 Non-volatile semiconductor memory device and method of fabricating thereof
08/11/1998US5793074 Metal oxide semiconductor capacitors having uniform C-V characteristics over an operating range and reduced susceptibility to insulator breakdown
08/11/1998US5793072 Non-photosensitive, vertically redundant 2-channel α-Si:H thin film transistor
08/11/1998US5793070 Reduction of trapping effects in charge transfer devices
08/11/1998US5793066 Base resistance controlled thyristor structure with high-density layout for increased current capacity
08/11/1998US5793065 Insulated-gate thyristor
08/11/1998US5793064 Bidirectional lateral insulated gate bipolar transistor
08/11/1998US5793063 High voltage, vertical-trench semiconductor device
08/11/1998US5793058 Multi-gate offset source and drain field effect transistors and methods of operating same
08/11/1998US5793057 Conductive amorphous-nitride barrier layer for high dielectric-constant material electrodes
08/11/1998US5793055 Hybrid electronic devices, particularly Josephson transistors
08/11/1998US5792699 Method for reduction of reverse short channel effect in MOSFET
08/11/1998US5792696 Nonvolatile memory device and manufacturing method thereof
08/11/1998US5792695 Connecting two-layer electrode wiring film containing silicide and polysilicon(thick) films with impurity diffusing area while keeping contact resistance uniformly low, for electrically programmable read only memory computers
08/11/1998US5792694 Method for fabricating a semiconductor memory cell structure
08/11/1998US5792679 Implanting mobility enhancing species into first region of low mobility semiconductor material, selectively oxidizing
08/11/1998US5792671 Method of manufacturing semiconductor device
08/11/1998US5792670 Method of manufacturing double polysilicon EEPROM cell and access transistor
08/11/1998CA2090096C Semiconductor device having polysilicon thin-film
08/06/1998WO1998034283A1 Silicon carbide static induction transistor and method for manufacturing same
08/06/1998WO1998034282A1 Asymmetrical thyristor
08/06/1998WO1998034280A1 Charge dissipation field emission device
08/06/1998WO1998034274A1 Self-aligned process for fabricating a passivating ledge in a heterojunction bipolar transistor
08/06/1998WO1998034268A2 Fabrication method for reduced-dimension integrated circuits
08/06/1998WO1998034233A1 A scalable flash eeprom memory cell, method of manufacturing and operation thereof
08/06/1998WO1998034089A1 Pressure sensor component with tubing connection
08/06/1998CA2228605A1 Method for measuring epitaxial film thickness of multilayer epitaxial wafer
08/05/1998EP0856893A2 Structure and device for selecting design options in an integrated circuit
08/05/1998EP0856892A2 MOSFET and manufacturing method thereof
08/05/1998EP0856891A2 Semiconductor integrated circuit device
08/05/1998EP0856886A1 Process for forming an edge structure to seal integrated electronic devices, and corresponding device
08/05/1998EP0856877A1 Process for forming integrated circuits using multistep plasma etching
08/05/1998EP0856200A1 Field controlled dipole transistor
08/05/1998EP0856143A2 Process for producing a speed of rotation coriolis sensor
08/05/1998EP0677207B1 Single crystal silicon on quartz
08/05/1998CN1189922A Photodetector involving a mosfet having a floating gate
1 ... 1889 1890 1891 1892 1893 1894 1895 1896 1897 1898 1899 1900 1901 1902 1903 1904 1905 1906 1907 1908 1909 ... 2182