Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
---|
11/03/1998 | US5831283 Passivation of copper with ammonia-free silicon nitride and application to TFT/LCD |
11/03/1998 | US5831282 Method of producing an HSG structure using an amorphous silicon disorder layer as a substrate |
11/03/1998 | US5831281 Thin film transistor |
11/03/1998 | US5831277 III-nitride superlattice structures |
11/03/1998 | US5830799 Method for forming embedded diffusion layers using an alignment mark |
11/03/1998 | US5830790 High voltage transistor of semiconductor memory devices |
11/03/1998 | US5830788 Method for forming complementary MOS device having asymmetric region in channel region |
11/03/1998 | US5830787 Method for fabricating a thin film transistor |
11/03/1998 | US5830786 Process for fabricating electronic circuits with anodically oxidized scandium doped aluminum wiring |
11/03/1998 | US5830785 Direct multilevel thin-film transistors production method |
11/03/1998 | US5830778 Method of manufacturing a charge transfer device |
11/03/1998 | US5830777 Method of manufacturing a capacitance type acceleration sensor |
11/03/1998 | US5830776 Method of manufacturing thin film transistor |
11/03/1998 | US5830771 Manufacturing method for semiconductor device |
11/03/1998 | US5830575 Memory device using movement of protons |
11/03/1998 | US5830270 Electrons |
10/29/1998 | WO1998048437A1 Semiconductor cathode and electron tube comprising a semiconductor cathode |
10/29/1998 | DE19818060A1 Acceleration sensor |
10/29/1998 | DE19811042A1 Semiconductor component with via structure |
10/29/1998 | DE19758430A1 IC structure including MOS transistor |
10/29/1998 | DE19717614A1 Passiver Halbleiterstrombegrenzer Passive semiconductor |
10/29/1998 | DE19717500A1 Heterostructure FET (HFET) with high modulation selectivity |
10/29/1998 | DE19717363A1 Platinum group metal structure production |
10/28/1998 | EP0874438A2 Electronic circuit with reverse battery protection |
10/28/1998 | EP0874403A2 Semiconductor devices with quantum-wave interference layers |
10/28/1998 | EP0874402A1 Diodes with quantum-wave interference layers |
10/28/1998 | EP0874401A2 Semiconductor device having a protective wiring layer |
10/28/1998 | EP0874397A2 Parasitic isolation transistor having an adjustable threshold voltage |
10/28/1998 | EP0874394A2 GaAs vertical fet |
10/28/1998 | EP0874393A2 Methods of forming integrated circuit capacitors having improved electrode and dielectric layer characteristics and capacitors formed thereby |
10/28/1998 | EP0874389A1 A method of producing MOSFET transistors by means of tilted implants |
10/28/1998 | EP0874369A2 Semiconductor device comprising a UV-light shielding layer |
10/28/1998 | EP0745273B1 Circuit arrangement, and junction field effect transistor suitable for use in such a circuit arrangement |
10/28/1998 | EP0744085B1 Electromagnetic radiation imaging device using thin film transistors |
10/28/1998 | CN1197513A Monolithic acceleration transducer |
10/28/1998 | CN1197296A Grid control mixing tube and its prepn. method |
10/28/1998 | CN1197295A CMOSFET and method for fabricating the same |
10/28/1998 | CN1197289A Device with asymmetrical channel dopant profile |
10/27/1998 | US5828602 Memory system having multiple programmable reference cells |
10/27/1998 | US5828600 Non-volatile semiconductor memory |
10/27/1998 | US5828586 High speed device simulating method |
10/27/1998 | US5828564 Rectifier heat dissipation |
10/27/1998 | US5828433 Liquid crystal display device and a method of manufacturing the same |
10/27/1998 | US5828430 Active matrix type liquid crystal display apparatus having optical shield layer capable of suppressing display distortion |
10/27/1998 | US5828308 Current sensing circuit formed in narrow area and having sensing electrode on major surface of semiconductor substrate |
10/27/1998 | US5828263 Field effect-controllable power semiconductor component with temperature sensor |
10/27/1998 | US5828130 Selectively deposited tungsten/doped polysilicon composite landing pad overlaying and electrically connecting active region; good etch stop; barrier to aluminum/silicon interdiffusion |
10/27/1998 | US5828124 Low-noise bipolar transistor |
10/27/1998 | US5828112 Semiconductor device incorporating an output element having a current-detecting section |
10/27/1998 | US5828104 MOS structure device having asymmetric LDD structure and fabrication method thereof |
10/27/1998 | US5828103 Recessed lightly doped drain (LDD) for higher performance MOSFET |
10/27/1998 | US5828102 Multiple finger polysilicon gate structure and method of making |
10/27/1998 | US5828101 Three-terminal semiconductor device and related semiconductor devices |
10/27/1998 | US5828100 Insulated gate semiconductor device having trench gate and inverter provided with the same |
10/27/1998 | US5828099 Semiconductor device having a nonvolatile memory cell in which the floating gate is charged with hot charge carriers at the source side |
10/27/1998 | US5828098 Semiconductor capacitor dielectric having various grain sizes |
10/27/1998 | US5828091 Interline charge coupled device solid state image sensor |
10/27/1998 | US5828090 Charge transfer device |
10/27/1998 | US5828089 Full protection component for a subscriber line interface circuit |
10/27/1998 | US5828087 AlInAs semiconductor device contaning Si and P |
10/27/1998 | US5828084 High performance poly-SiGe thin film transistor |
10/27/1998 | US5828082 Thin film transistor having dual insulation layer with a window above gate electrode |
10/27/1998 | US5828081 Integrated semiconductor device |
10/27/1998 | US5828080 A mixed oxide thin film of zirconium and rare earth elements including yttrium; rocking curve of the film has half-value width upto 1.50 degree; improved crystal and surface properties |
10/27/1998 | US5828077 Long-period superlattice resonant tunneling transistor |
10/27/1998 | US5828076 Microelectronic component and process for its production |
10/27/1998 | US5827967 Semiconductor accelerometer including strain gauges forming a wheatstone bridge and diffusion resistors |
10/27/1998 | US5827774 Ion implantation method using tilted ion beam |
10/27/1998 | US5827773 Depositing microcrystalline film having amorphous matter, microcrystallites embedded therein, annealing; forms uniform crystal grains |
10/27/1998 | US5827772 Oxygen annealing followed by hydrogen annealing to reduce oxygen concentration; increased carrier mobility |
10/27/1998 | US5827769 Method for fabricating a transistor with increased hot carrier resistance by nitridizing and annealing the sidewall oxide of the gate electrode |
10/27/1998 | US5827768 Method for manufacturing an MOS transistor having a self-aligned and planarized raised source/drain structure |
10/27/1998 | US5827760 Method for fabricating a thin film transistor of a liquid crystal display device |
10/27/1998 | US5827756 Method of manufacturing semiconductor device |
10/27/1998 | US5826969 Illuminating screw driver |
10/27/1998 | CA2048517C Process for growing crystalline thin film |
10/22/1998 | WO1998047182A1 Nonvolatile semiconductor memory |
10/22/1998 | WO1998047173A1 Mos transistor with high doping gradient under the grid |
10/22/1998 | WO1998047171A1 Method of controlling dopant concentrations by implanting gettering atoms |
10/22/1998 | WO1998047151A1 Electrically erasable nonvolatile memory |
10/22/1998 | WO1998047150A1 Nonvolatile memory |
10/22/1998 | WO1998047044A1 Liquid crystal display device |
10/22/1998 | DE19745387A1 Semiconductor acceleration detector |
10/22/1998 | DE19743216A1 Semiconductor pressure sensor |
10/22/1998 | CA2286180A1 Nonvolatile semiconductor memory |
10/22/1998 | CA2286125A1 Electrically erasable nonvolatile memory |
10/21/1998 | EP0872895A2 Vertical insulated gate field-effect transistor, method of making the same and corresponding integrated circuit |
10/21/1998 | EP0872894A2 Static induction semiconductor device, and driving method and drive circuit thereof |
10/21/1998 | EP0872893A1 PNP lateral transistor in CMOS technology |
10/21/1998 | EP0872891A1 Device for protecting the interface of telephone lines |
10/21/1998 | EP0872720A1 Microstructure with flexible diaphragm for measuring pressure and procedure to produce |
10/21/1998 | EP0871979A1 Method and device for the deposit of at least one film of intrinsic microcrystalline or nanocrystalline hydrogenated silicon and photovoltaic cell obtained by this method |
10/21/1998 | EP0871888A1 Automated molecular biological diagnostic system |
10/21/1998 | EP0871557A1 Method of producing metal quantum dots |
10/21/1998 | EP0793861B1 Tunnel-effect component and method of manufacturing thereof |
10/21/1998 | EP0749528B1 A turbine engine ignition exciter circuit |
10/21/1998 | EP0667026A4 Flash memory system, and methods of constructing and utilizing same. |
10/21/1998 | CN1196832A Thin film transistor, method of its manufacture and circuit and liquid crystal display using thin film transistor |
10/21/1998 | CN1196831A Process for generating source regions of flast-EEPROM storage cell field |
10/21/1998 | CN1196803A Improved TFT, method of making it and matrix displays incorporating TFT |