| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 09/22/1998 | US5811871 Semiconductor device comprising a bipolar transistor |
| 09/22/1998 | US5811868 Integrated high-performance decoupling capacitor |
| 09/22/1998 | US5811866 Active-matrix board having top and bottom light shielding films |
| 09/22/1998 | US5811865 Dielectric in an integrated circuit |
| 09/22/1998 | US5811864 Planarized integrated circuit product and method for making it |
| 09/22/1998 | US5811863 Transistors having dynamically adjustable characteristics |
| 09/22/1998 | US5811861 Semiconductor device having a power supply voltage step-down circuit |
| 09/22/1998 | US5811855 Transistor formed in a semiconductor layer |
| 09/22/1998 | US5811854 One piece semiconductor device having a power fet and a low level signal element with laterally spaced buried layers |
| 09/22/1998 | US5811852 Memory cell structure fabricated with improved fabrication process by forming dielectric layer directly on an insulated surface of a substrate |
| 09/22/1998 | US5811850 LDMOS transistors, systems and methods |
| 09/22/1998 | US5811846 Thin-film transistor and display device using the same |
| 09/22/1998 | US5811844 High electron mobility transistors |
| 09/22/1998 | US5811843 Field effect transistor |
| 09/22/1998 | US5811837 For an electro-optical device |
| 09/22/1998 | US5811835 Thin-film transistor with edge inclined gates and liquid crystal display device furnished with the same |
| 09/22/1998 | US5811832 Non-volatile memory device |
| 09/22/1998 | US5811831 Semiconductor device exploiting a quantum interference effect |
| 09/22/1998 | US5811350 Method of forming contact openings and an electronic component formed from the same and other methods |
| 09/22/1998 | US5811348 Method for separating a device-forming layer from a base body |
| 09/22/1998 | US5811342 Method for forming a semiconductor device with a graded lightly-doped drain structure |
| 09/22/1998 | US5811341 Differential amplifier having unilateral field effect transistors and process of fabricating |
| 09/22/1998 | US5811340 Metal oxide semiconductor field effect transistor and method of manufacturing the same |
| 09/22/1998 | US5811338 Method of making an asymmetric transistor |
| 09/22/1998 | US5811336 Method of forming MOS transistors having gate insulators of different thicknesses |
| 09/22/1998 | US5811335 Semiconductor electronic device with autoaligned polysilicon and silicide control terminal |
| 09/22/1998 | US5811330 Forming first conductive layer over insulating layer, etching first aperture in conductive layer, depositing second insulating and second conductive layers, selectively etching second aperture in second layer through first aperture |
| 09/22/1998 | US5811328 Electro-optical device and thin film transistor and method forming the same |
| 09/22/1998 | US5811326 Method for manufacturing thin film transistor |
| 09/22/1998 | US5811325 Method of making a polysilicon carbon source/drain heterojunction thin-film transistor |
| 09/22/1998 | US5811324 Method for manufacturing thin film transistor |
| 09/22/1998 | US5811323 Process for fabricating a thin film transistor |
| 09/22/1998 | US5811321 Semiconductor pressure detecting device and manufacturing method of the device |
| 09/22/1998 | US5811319 Methods of forming electrodes on gallium nitride group compound semiconductors |
| 09/22/1998 | US5811318 Method for manufacturing a liquid crystal display |
| 09/22/1998 | US5811316 Method of forming teos oxide and silicon nitride passivation layer on aluminum wiring |
| 09/22/1998 | US5811222 Projecting an image onto photosensitive material covering semiconductor substrate, then projecting a second image which partially overlaps the first |
| 09/22/1998 | US5811181 Ferroelectric thin film, ferroelectric thin film covering substrate and manufacturing method of ferroelectric thin film |
| 09/22/1998 | US5810924 Low defect density/arbitrary lattice constant heteroepitaxial layers |
| 09/22/1998 | US5810923 Method for forming oxide thin film and the treatment of silicon substrate |
| 09/22/1998 | CA2136580C Gallium oxide coatings for optoelectronic devices |
| 09/17/1998 | WO1998040909A2 Method of forming etched structures comprising implantation steps |
| 09/17/1998 | DE19809564A1 Silicon carbide semiconductor device |
| 09/17/1998 | DE19741972C1 Silicon-on-Isolator cells, e.g. for IGBT, MOS controlled thyristor, FET power semiconductor |
| 09/17/1998 | DE19710324A1 Semiconductor devices with micro-mechanical structures |
| 09/16/1998 | EP0865085A1 Insulated gate bipolar transistor with high dynamic ruggedness |
| 09/16/1998 | EP0865083A2 Electrode for semiconductor device and method of manufacturing it |
| 09/16/1998 | EP0865080A2 MOS-gated semiconductor devices |
| 09/16/1998 | EP0865078A1 Method of depositing nanometre scale particles |
| 09/16/1998 | EP0865076A2 Electrode structure for transistors, non-volatile memories and the like and method for fabricating said electrode |
| 09/16/1998 | EP0864537A1 Ferroelectric material, method of manufacturing the same, semiconductor memory, and method of manufacturing the same |
| 09/16/1998 | EP0864180A1 Low resistance contact semiconductor diode |
| 09/16/1998 | EP0864178A1 Trench-gated mosfet including integral temperature detection diode |
| 09/16/1998 | EP0864172A2 Process for producing an integrated circuit device with at least one mos transistor |
| 09/16/1998 | EP0864158A1 Power supply independent current source for flash eprom erasure |
| 09/16/1998 | CN1193414A Floating gate non-volatile memory device, and method of manufacturing same |
| 09/16/1998 | CN1193193A Silicon/germanium-silicon verticle noded type field effect transistor |
| 09/16/1998 | CN1193192A Semiconductor device and mfg. method thereof |
| 09/16/1998 | CN1193185A Method for mfg. of complementary MOS semiconductor device |
| 09/16/1998 | CN1193182A Semiconductor heterogeneous structure and mfg. method thereof. and semiconductor device |
| 09/16/1998 | CN1039859C Semiconductor device and method of fabricating same |
| 09/15/1998 | US5809102 CCD having charge-injected potential barrier regions protected from overvoltages |
| 09/15/1998 | US5808939 Non-volatile semiconductor memory device and data programming method |
| 09/15/1998 | US5808595 Thin-film transistor circuit and image display |
| 09/15/1998 | US5808366 Integrated circuits, and methods of fabricating same, which take into account capacitive loading by the integrated circuit potting material |
| 09/15/1998 | US5808365 Semiconductor device and method of manufacturing the same |
| 09/15/1998 | US5808362 Interconnect structure and method of forming |
| 09/15/1998 | US5808352 Semiconductor apparatus having crystal defects |
| 09/15/1998 | US5808349 Magnetized photoconductive semiconductor switch |
| 09/15/1998 | US5808348 A semiconductor which includes a polysilicon gate separated from substrate by a re-oxidized nitrided oxide film in which concentration of re-oxidized nitride in film underlying gate is non-uniform |
| 09/15/1998 | US5808346 Semiconductor device structure which provides individually controllable body-terminal voltage of MOS transistors |
| 09/15/1998 | US5808345 High speed IGBT |
| 09/15/1998 | US5808344 Single gate is shared by two transistors |
| 09/15/1998 | US5808341 Semiconductor device having an SOI structure |
| 09/15/1998 | US5808340 Short channel self aligned VMOS field effect transistor |
| 09/15/1998 | US5808339 Two-layered gate structure for a semiconductor device and method for producing the same |
| 09/15/1998 | US5808336 Storage device |
| 09/15/1998 | US5808332 Field-effect semiconductor device |
| 09/15/1998 | US5808330 Polydirectional non-orthoginal three layer interconnect architecture |
| 09/15/1998 | US5808328 High-speed and high-density semiconductor memory |
| 09/15/1998 | US5808326 Delta protection component |
| 09/15/1998 | US5808322 Faster switching GaAs FET switches by illumination with high intensity light |
| 09/15/1998 | US5808321 Amorphous silicon crystallized by heating |
| 09/15/1998 | US5808320 Contact openings and an electronic component formed from the same |
| 09/15/1998 | US5808318 Polycrystalline semiconductor thin film for semiconductor TFT on a substrate having a mobility in a longitudinal direction greater than in a width direction |
| 09/15/1998 | US5808317 Split-gate, horizontally redundant, and self-aligned thin film transistors |
| 09/15/1998 | US5808316 Microcrystal silicon thin film transistor |
| 09/15/1998 | US5808315 Thin film transistor having transparent conductive film |
| 09/15/1998 | US5807788 Method for selective deposition of refractory metal and device formed thereby |
| 09/15/1998 | US5807780 High frequency analog transistors method of fabrication and circuit implementation |
| 09/15/1998 | US5807774 Simple method of fabricating ferroelectric capacitors |
| 09/15/1998 | US5807772 Method for forming semiconductor device with bottom gate connected to source or drain |
| 09/15/1998 | US5807770 Fabrication method of semiconductor device containing semiconductor active film |
| 09/15/1998 | US5807769 Methods of making thin film transistors |
| 09/15/1998 | US5807759 Method of fabricating a contact structure for a raised source/drain MOSFET |
| 09/15/1998 | US5807728 Thin film transistor for antistatic circuit and method for fabricating the same |
| 09/11/1998 | WO1998039827A1 Gallium nitride semiconductor light emitting element with active layer having multiplex quantum well structure and semiconductor laser light source device |
| 09/11/1998 | WO1998039802A1 Method for manufacturing semiconductor integrated circuit device |
| 09/11/1998 | WO1998039801A1 Thin film ferroelectric capacitors having improved memory retention through the use of essentially smooth bottom electrode structures |
| 09/11/1998 | WO1998039800A1 Strontium bismuth niobate tantalate ferroelectric thin film |