| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/04/1999 | WO1998049732A3 Lateral mos transistor device |
| 02/04/1999 | DE19832329A1 Silicon carbide semiconductor structure manufacturing method |
| 02/04/1999 | DE19832327A1 Silicon carbide based semiconductor structure e.g. for MOSFET |
| 02/04/1999 | DE19830477A1 High temperature resistant semiconductor device |
| 02/04/1999 | DE19830476A1 Semiconductor device for accelerometer |
| 02/03/1999 | EP0895290A1 Edge termination method and structure for power mosfet |
| 02/03/1999 | EP0895288A2 Electrode line for semiconducor device and method of manufacturing it |
| 02/03/1999 | EP0895276A1 Process for manufacturing integrated microstructures of single-crystal semiconductor material |
| 02/03/1999 | EP0894766A1 Boron-doped isotopic diamond and process for producing the same |
| 02/03/1999 | EP0894339A1 Silicon carbide cmos and method of fabrication |
| 02/03/1999 | EP0894148A1 Transistor-based molecular detection apparatus and method |
| 02/03/1999 | EP0711363B1 High resistance silicon carbide and process for production thereof |
| 02/03/1999 | CN1207204A Highly-integrated semiconductor memory and process for preparation of the memory |
| 02/03/1999 | CN1041977C Nonvolatile semiconductor device having side wall split gate for compensating for over-erasing operation |
| 02/03/1999 | CN1041973C 半导体器件 Semiconductor devices |
| 02/02/1999 | US5867426 Method of programming a flash memory cell |
| 02/02/1999 | US5867425 Nonvolatile memory capable of using substrate hot electron injection |
| 02/02/1999 | US5867405 Method for storing history data |
| 02/02/1999 | US5867368 Mounting for a semiconductor integrated circuit device |
| 02/02/1999 | US5867242 Electrically isolated pixel element in a low voltage activated active matrix liquid crystal display and method |
| 02/02/1999 | US5867233 Active matrix liquid crystal display substrate with island structure covering break in signal bus line and method of producing same |
| 02/02/1999 | US5867139 Liquid crystal display device and method of driving the same |
| 02/02/1999 | US5866946 Semiconductor device having a plug for diffusing hydrogen into a semiconductor substrate |
| 02/02/1999 | US5866944 Multichip press-contact type semiconductor device |
| 02/02/1999 | US5866938 Semiconductor device equipped with antifuse elements and a method for manufacturing an FPGA |
| 02/02/1999 | US5866934 Parallel and series-coupled transistors having gate conductors formed on sidewall surfaces of a sacrificial structure |
| 02/02/1999 | US5866931 DMOS power transistor with reduced number of contacts using integrated body-source connections |
| 02/02/1999 | US5866930 Semiconductor device and method of manufacturing the same |
| 02/02/1999 | US5866927 Integrated circuit devices having contact pads which are separated by sidewall spacers |
| 02/02/1999 | US5866926 Semiconductor device |
| 02/02/1999 | US5866925 Gallium nitride junction field-effect transistor |
| 02/02/1999 | US5866921 Lateral SRAM transistor circuits and methods of fabrication therefor |
| 02/02/1999 | US5866919 TFT array having planarized light shielding element |
| 02/02/1999 | US5866817 Acceleration sensor |
| 02/02/1999 | US5866473 Method of manufacturing a polysilicon gate having a dimension below the photolithography limitation |
| 02/02/1999 | US5866468 Forming silicon oxide on silicon semiconductor |
| 02/02/1999 | US5866465 Semiconductor processing method of forming a contact opening to a region adjacent a field isolation mass |
| 02/02/1999 | US5866460 Method of forming a multiple inplant lightly doped drain (MILDD) field effect transistor |
| 02/02/1999 | US5866459 Method of fabricating a contact structure for an MOS transistor entirely on isolation oxide |
| 02/02/1999 | US5866446 Method of manufacturing bimos device |
| 02/02/1999 | US5866443 Very dense integrated circuit package and method for forming the same |
| 02/02/1999 | US5866442 Method and apparatus for filling a gap between spaced layers of a semiconductor |
| 02/02/1999 | US5864932 Partially or completely encapsulated top electrode of a ferroelectric capacitor |
| 02/02/1999 | CA2105069C Visible light emitting diodes fabricated from soluble semiconducting polymers |
| 01/28/1999 | WO1999004440A1 Microelectronic components and electronic networks comprising dna |
| 01/28/1999 | WO1999004437A1 Vertical power mosfet |
| 01/28/1999 | WO1999004436A1 Method for making a vertical mos transistor |
| 01/28/1999 | WO1999004435A1 Novel cell topology for power transistors with increased packing density |
| 01/28/1999 | WO1999004428A1 Method for producing a matrix from thin film transistors with storage capacities |
| 01/28/1999 | WO1999004427A1 Electrical bonding of a semiconductor junction |
| 01/28/1999 | WO1999004422A1 Fusion-bond electrical feed-through |
| 01/28/1999 | WO1999004418A1 Method for targeted production on n-type conductive areas in diamond layers by ion implantation |
| 01/28/1999 | WO1999004054A2 Method of using hydrogen and oxygen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom |
| 01/28/1999 | DE19833237A1 Semiconductor thin film and semiconductor device |
| 01/28/1999 | DE19827901A1 Recessed gate semiconductor device production |
| 01/28/1999 | DE19816905A1 Integrated circuit with short channel vertical MOS transistor |
| 01/28/1999 | DE19732043A1 Controllable semiconductor component |
| 01/28/1999 | DE19731496A1 Herstellungsverfahren für ein durch Feldeffekt gesteuertes Halbleiterbauelement Manufacturing method of a field-effect-controlled semiconductor component |
| 01/28/1999 | DE19731495A1 Durch Feldeffekt steuerbarer Bipolartransistor und Verfahren zu seiner Herstellung Field effect-controllable bipolar transistor and method for its preparation |
| 01/27/1999 | EP0893884A2 Method and device for controlling a gate turn-off thyristor |
| 01/27/1999 | EP0893883A2 Device for limiting the hold current of a gate turn-off thyristor |
| 01/27/1999 | EP0893831A1 High voltage capacitor |
| 01/27/1999 | EP0893830A1 Insulated gate semiconductor device |
| 01/27/1999 | EP0893829A1 MOS output driver |
| 01/27/1999 | EP0893827A1 Electronic device and method for forming a membrane for an electronic device |
| 01/27/1999 | EP0893825A1 Planarization method with a multilayer for integrated semiconductor electronic devices |
| 01/27/1999 | EP0893821A1 Process for the manufacturing of a DMOS-technology transistor providing for a single thermal process for the formation of source and body regions |
| 01/27/1999 | EP0893773A2 Simulation mesh generation method, apparatus, and program product |
| 01/27/1999 | EP0892991A1 Semiconductor component with adjustable current amplification based on avalanche breakdown controlled by tunnel current |
| 01/27/1999 | EP0892990A1 Semiconductor component with a split floating gate |
| 01/27/1999 | CN1206227A Method and apparatus for stress relieved electronic module |
| 01/27/1999 | CN1206225A Method of manufacturing semiconductor device having diffrent orientations of crystal channel growth |
| 01/27/1999 | CN1041873C Semiconductor device and method for forming the same |
| 01/27/1999 | CN1041872C Semiconductor device and method for forming the same |
| 01/26/1999 | US5864835 Apparatus for simulating a biological neuron |
| 01/26/1999 | US5864504 Voltage generating circuit |
| 01/26/1999 | US5864501 Test pattern structure for endurance test of a flash memory device |
| 01/26/1999 | US5864180 Semiconductor device and method for manufacturing the same |
| 01/26/1999 | US5864167 Semiconductor device |
| 01/26/1999 | US5864165 Triangular semiconductor NAND gate |
| 01/26/1999 | US5864163 Fabrication of buried channel devices with shallow junction depth |
| 01/26/1999 | US5864162 Apparatus and method of making a self-aligned integrated resistor load on ultrathin silicon on sapphire |
| 01/26/1999 | US5864161 Semiconductor device and manufacturing method thereof |
| 01/26/1999 | US5864160 Transistor device with reduced hot carrier injection effects |
| 01/26/1999 | US5864159 Insulated gate semiconductor device structure to prevent a reduction in breakdown voltage |
| 01/26/1999 | US5864158 Trench-gated vertical CMOS device |
| 01/26/1999 | US5864157 Flash memory with improved programming speed |
| 01/26/1999 | US5864155 Semiconductor array with self-adjusted contacts |
| 01/26/1999 | US5864153 Capacitor structure of semiconductor memory cell and fabrication process thereof |
| 01/26/1999 | US5864152 Semiconductor memory and method of writing, reading, and sustaining data |
| 01/26/1999 | US5864151 Semiconductor device |
| 01/26/1999 | US5864150 Switching device for a liquid crystal display |
| 01/26/1999 | US5864149 Staggered thin film transistor with transparent electrodes and an improved ohmic contact structure |
| 01/26/1999 | US5864063 Electrostatic capacity-type acceleration sensor |
| 01/26/1999 | US5864062 Semiconductor acceleration sensor |
| 01/26/1999 | US5863837 Aligning opening for source and drain electrodes to a gate electrode in one step |
| 01/26/1999 | US5863831 Process for fabricating semiconductor device with shallow p-type regions using dopant compounds containing elements of high solid solubility |
| 01/26/1999 | US5863829 Subjecting bonded wafer to plasma assisted chemical etching to form thin film of active substrate and remove non-bonded peripheral portion of wafer |
| 01/26/1999 | US5863823 Self-aligned edge control in silicon on insulator |
| 01/26/1999 | US5863822 Method of making non-volatile semiconductor memory devices having large capacitance between floating and control gates |