| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
|---|
| 02/16/1999 | US5872386 For multi-channel diodes |
| 02/16/1999 | US5872383 Semiconductor device and method of manufacturing the same |
| 02/16/1999 | US5872382 Low junction leakage mosfets with particular sidewall spacer structure |
| 02/16/1999 | US5872380 Hexagonal sense cell architecture |
| 02/16/1999 | US5872378 Dual thin oxide ESD network for nonvolatile memory applications |
| 02/16/1999 | US5872377 Power semiconductor devices having highly integrated unit cells therein |
| 02/16/1999 | US5872376 Oxide formation technique using thin film silicon deposition |
| 02/16/1999 | US5872375 Semiconductor device including a pair of field effect transistors formed in a depression |
| 02/16/1999 | US5872374 Vertical semiconductor device |
| 02/16/1999 | US5872372 Thin film transistor with piezoelectric film |
| 02/16/1999 | US5872370 TFT with reduced channel length and parasitic capacitance |
| 02/16/1999 | US5872369 Solid-state antenna switch and field-effect transistor |
| 02/16/1999 | US5872315 Pressure detecting apparatus |
| 02/16/1999 | US5872049 Nitrogenated gate structure for improved transistor performance and method for making same |
| 02/16/1999 | US5872047 Rapid thermal process in which a semiconductor substrate implanted with ions through a thin insulating film is thermally treated at a high temperature for a short time under the condition of elevating the temperature at a great speed |
| 02/16/1999 | US5872039 Semiconductor device and manufacturing method of the same |
| 02/16/1999 | US5872038 Semiconductor device having an elevated active region formed in an oxide trench and method of manufacture thereof |
| 02/16/1999 | US5872037 Method for manufacturing a vertical mosfet including a back gate electrode |
| 02/16/1999 | US5872036 Method of manufacturing a split-gate flash memory cell |
| 02/16/1999 | US5872035 Method of forming a floating gate in a flash memory device |
| 02/16/1999 | US5872031 Exposing layer of aluminum arsenide to an oxidizing gas mixture so that the aluminum arsenide is oxidized to aluminum oxide, and of controlling excess arsenic released in the aluminum oxide during the exposing step,hydrogenation of |
| 02/16/1999 | US5872028 Method of forming power semiconductor devices with controllable integrated buffer |
| 02/16/1999 | US5872021 Method for manufacturing LCD device capable of avoiding short circuit between signal line and pixel electrode |
| 02/16/1999 | US5872019 Method for fabricating a field emitter array incorporated with metal oxide semiconductor field effect transistors |
| 02/16/1999 | CA2107067C Negative absolute conductance device and method |
| 02/16/1999 | CA2048675C Fermi threshold field effect transistor |
| 02/11/1999 | WO1999007020A1 Gate-controlled thyristor |
| 02/11/1999 | WO1999007019A1 Three-pole high-voltage switch |
| 02/11/1999 | WO1999007018A1 Semiconductor structure with a silicon carbide material base, with several electrically different sub-regions |
| 02/11/1999 | WO1999007016A1 Wafer marking |
| 02/11/1999 | WO1999007011A1 Method for configuring semiconductors with high precision, good homogeneity and reproducibility |
| 02/11/1999 | WO1999007000A2 Two bit eeprom using asymmetrical charge trapping |
| 02/11/1999 | DE19830320A1 High speed horizontal charge-coupled device |
| 02/11/1999 | DE19731203A1 CMOS-Schaltung und Verfahren zu ihrer Herstellung CMOS circuit and method for their preparation |
| 02/10/1999 | EP0896370A1 Electrically erasable programmable non-volatile memory device compatible with CMOS/SOI manufacturing process |
| 02/10/1999 | EP0896366A1 EEPROM cell structure and fabrication process |
| 02/10/1999 | EP0896365A1 Method of manufactruing MOSFETs with self-aligned silicide contacts |
| 02/10/1999 | EP0896364A1 Method of making a field-effect transistor with self-aligned TiSi2/TiN source and drain contacts |
| 02/10/1999 | EP0895657A1 Spin transistor |
| 02/10/1999 | EP0706715A4 Electrical charge transfer apparatus |
| 02/10/1999 | CN1207575A Cubic crystal nitride semiconductor device and its mfg. method |
| 02/09/1999 | US5870334 Nonvolatile semiconductor memory device |
| 02/09/1999 | US5870330 Static random access memory cell |
| 02/09/1999 | US5869922 Vapor deposited inorganic coatings comprising an ultraviolet radiation raman band |
| 02/09/1999 | US5869901 Semiconductor device having aluminum interconnection and method of manufacturing the same |
| 02/09/1999 | US5869882 Zener diode structure with high reverse breakdown voltage |
| 02/09/1999 | US5869881 Pillar bipolar transistor |
| 02/09/1999 | US5869879 CMOS integrated circuit having a sacrificial metal spacer for producing graded NMOS source/drain junctions dissimilar from PMOS source/drain junctions |
| 02/09/1999 | US5869876 Semiconductor strain sensor |
| 02/09/1999 | US5869875 Lateral diffused MOS transistor with trench source contact |
| 02/09/1999 | US5869874 Field effect transistor with barrier layer |
| 02/09/1999 | US5869872 Semiconductor integrated circuit device and manufacturing method for the same |
| 02/09/1999 | US5869871 Semiconductor device capable of avoiding damage by ESD |
| 02/09/1999 | US5869869 Integrated circuit |
| 02/09/1999 | US5869868 Trench structure |
| 02/09/1999 | US5869867 FET semiconductor integrated circuit device having a planar element structure |
| 02/09/1999 | US5869866 Integrated circuit having sacrificial spacers for producing graded NMOS source/drain junctions possibly dissimilar from PMOS source/drain junctions |
| 02/09/1999 | US5869865 Lateral field effect transistor with minimum total on-resistance |
| 02/09/1999 | US5869864 Field effect controlled semiconductor component |
| 02/09/1999 | US5869863 memory having a trench type gate structure |
| 02/09/1999 | US5869862 High integration semiconductor device |
| 02/09/1999 | US5869860 Ferroelectric memory device and method for producing the device |
| 02/09/1999 | US5869858 Semiconductor device for reducing variations in characteristics of the device |
| 02/09/1999 | US5869856 Field effect transistor |
| 02/09/1999 | US5869853 Linear charge-coupled device having improved charge transferring characteristics |
| 02/09/1999 | US5869850 Lateral insulated gate bipolar transistor |
| 02/09/1999 | US5869847 Thin film transistor |
| 02/09/1999 | US5869845 Resonant tunneling memory |
| 02/09/1999 | US5869843 Memory array having a multi-state element and method for forming such array or cells thereof |
| 02/09/1999 | US5869842 Mux and demux circuits using photo gate transistor |
| 02/09/1999 | US5869803 Method of forming polycrystalline silicon layer on substrate and surface treatment apparatus thereof |
| 02/09/1999 | US5869397 Method of manufacturing semiconductor device |
| 02/09/1999 | US5869381 RF power transistor having improved stability and gain |
| 02/09/1999 | US5869380 Method for forming a bipolar junction transistor |
| 02/09/1999 | US5869379 Method of forming air gap spacer for high performance MOSFETS' |
| 02/09/1999 | US5869378 Method of reducing overlap between gate electrode and LDD region |
| 02/09/1999 | US5869377 Method of fabrication LDD semiconductor device with amorphous regions |
| 02/09/1999 | US5869375 Forming the transistor having channel formed at a side wall of a gate and at a lower portion to prevent a short channel effect; tungsten gate electrode has a strong anti-oxide propery during thermal-oxidation |
| 02/09/1999 | US5869374 Method to form mosfet with an inverse T-shaped air-gap gate structure |
| 02/09/1999 | US5869372 Method of manufacturing a power semiconductor device |
| 02/09/1999 | US5869371 Structure and process for reducing the on-resistance of mos-gated power devices |
| 02/09/1999 | US5869370 Ultra thin tunneling oxide using buffer CVD to improve edge thinning |
| 02/09/1999 | US5869369 Method of fabricating a flash memory |
| 02/09/1999 | US5869365 Method of forming T electrode in field effect transistor |
| 02/09/1999 | US5869361 Thin film transistor and method for fabricating the same |
| 02/09/1999 | US5869360 Method for forming a thin film transistor |
| 02/09/1999 | US5869359 A dielectric layer formed over silicon layer, masking, etching to form a trench, oxidizing the sidewall, forming a polysilicon gate within the trench, covering a metal silicide, minimizing agglomeration within the silicide layer |
| 02/09/1999 | US5869358 Producing anode emitter with desired thickness and doping concentration, setting emitter efficiency by nuclear irradiation before applying anode metallization layer |
| 02/09/1999 | US5869357 Metallization and wire bonding process for manufacturing power semiconductor devices |
| 02/09/1999 | US5869354 Forming a etch stop layer in the substrate parallel to the principal surface, forming semiconductor on the principal surface, depositing a low stress dielectric membranes over semiconductor, etching etch barrier and a substrate portion |
| 02/09/1999 | US5869351 Method of producing an electro-optical device |
| 02/09/1999 | US5869350 Fabrication of visible light emitting diodes soluble semiconducting polymers |
| 02/04/1999 | WO1999005726A1 Semiconductor with tunnel hole contact sources |
| 02/04/1999 | WO1999005725A1 Field effect semiconductor device |
| 02/04/1999 | WO1999005724A1 Single-electron floating-gate mos memory |
| 02/04/1999 | WO1999005720A2 Cmos circuit and method for the production thereof |
| 02/04/1999 | WO1999005715A1 Semiconductor device and method of producing the same |
| 02/04/1999 | WO1999005714A1 Method for producing a semiconductor component controlled by field effect |
| 02/04/1999 | WO1999005713A1 Bipolar transistor which can be controlled by field effect and method for producing the same |
| 02/04/1999 | WO1999005711A1 Producing microstructures or nanostructures on a support |