Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/1998
12/29/1998US5854113 Method for fabricating power transistor using silicon-on-insulator (SOI) wafer
12/29/1998US5854104 Process for fabricating nonvolatile semiconductor memory device having a ferroelectric capacitor
12/29/1998US5854102 Vertical diode structures with low series resistance
12/29/1998US5854097 Method of manufacturing a semiconductor device
12/29/1998US5854096 Process for fabricating semiconductor device
12/29/1998US5853478 Method for forming crystal and crystal article obtained by said method
12/24/1998DE19805075A1 Solid-state image pick-up with vertical and horizontal CCDs
12/24/1998DE19803479A1 Polysilicon thin film transistor
12/24/1998DE19801999A1 Semiconductor device, e.g. IGBT
12/24/1998DE19735400C1 Cascode insulated gate bipolar transistor e.g. for high voltage switch
12/24/1998DE19726126A1 Bipolarer Schalttransistor mit verringerter Sättigung Bipolar switching transistor with reduced saturation
12/24/1998DE19726085A1 Nichtflüchtige Speicherzelle A non-volatile memory cell
12/23/1998WO1998058412A1 Silicon carbide static induction transistor structures
12/23/1998WO1998058404A2 A substrate for high frequency integrated circuits
12/23/1998WO1998058265A1 Suspension arrangement for semiconductor accelerometer
12/23/1998WO1998043299A3 Sic semiconductor array with enhanced channel mobility
12/23/1998EP0886321A1 Threshold voltage adjusting method for a MIS device and charge detecting device
12/23/1998EP0886320A1 One polysilicon level EEPROM cell with self-aligned tunnel zone
12/23/1998EP0886319A2 Method for making a thin film transistor
12/23/1998EP0886317A2 Dielectric device, Dielectric memory and method of fabricating the same
12/23/1998EP0886316A1 Protection of a logic device well comprising an integrated power MOS transistor
12/23/1998EP0886308A2 Plasma nitridation of a silicon oxide film
12/23/1998EP0886144A1 A hermetically-sealed sensor with a movable microstructure
12/23/1998EP0885483A1 Push-pull power amplifier
12/23/1998EP0885460A1 Trenched dmos transistor with lightly doped tub
12/23/1998EP0885457A2 Method for making a circuit structure having a flip-mounted matrix of devices
12/23/1998CN1202982A Semiconductor storage device and process for manufacturing the same
12/23/1998CN1202981A Method for producing very small structural widths on a semiconductor substrate
12/23/1998CN1202980A Method in the manufacturing of a semiconductor device
12/23/1998CN1202929A Apparatus and methods for active programmable matrix devices
12/23/1998CN1202739A Semiconductor device
12/23/1998CN1202737A 半导体器件 Semiconductor devices
12/23/1998CN1202733A Protecting circuit for semiconductor circuit
12/23/1998CN1202729A Semiconductor device and method of manufacturing the same
12/23/1998CN1202723A Method for manufacturing semiconductor device having metal silicide film
12/23/1998CN1202682A Liquid crystal panel subbstrate, liquid crystal panel and electronic apparatus using the same
12/23/1998CN1041365C Method for producing raractor diode
12/23/1998CN1041364C Tannel diode and storing element with such tannel diode
12/23/1998CA2294290A1 A substrate for high frequency integrated circuits
12/22/1998US5852577 Electrically erasable and programmable read-only memory having a small unit for program and erase
12/22/1998US5852488 Electro-optical device and method of driving the same
12/22/1998US5852481 Liquid crystal display with two gate electrodes each having a non-anodizing and one anodizing metallic layer and method of fabricating
12/22/1998US5852381 Turbine engine ignition exciter circuit including low voltage lockout control
12/22/1998US5852366 High voltage level shift circuit including CMOS transistor having thin gate insulating film
12/22/1998US5852327 Semiconductor device
12/22/1998US5852320 Semiconductor sensor with protective cap covering exposed conductive through-holes
12/22/1998US5852319 Gate electrode for semiconductor device
12/22/1998US5852318 Semiconductor device
12/22/1998US5852316 Complementary heterojunction amplifier
12/22/1998US5852315 N-sided polygonal cell layout for multiple cell transistor
12/22/1998US5852314 Thin epitaxy resurf integrated circuit containing high voltage p-channel and n-channel devices with source or drain not tied to ground
12/22/1998US5852312 Flash eeprom cell
12/22/1998US5852311 Non-volatile memory devices including capping layer contact holes
12/22/1998US5852306 Flash memory with nanocrystalline silicon film floating gate
12/22/1998US5851926 Method for etching transistor gates using a hardmask
12/22/1998US5851909 Method of producing semiconductor device using an adsorption layer
12/22/1998US5851908 Method for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of highly doped amorphous layer as a source for dopant diffusion into SiC
12/22/1998US5851903 Method of forming closely pitched polysilicon fuses
12/22/1998US5851896 Conductive exotic-nitride barrier layer for high-dielectric-constant material electrodes
12/22/1998US5851893 Method of making transistor having a gate dielectric which is substantially resistant to drain-side hot carrier injection
12/22/1998US5851891 IGFET method of forming with silicide contact on ultra-thin gate
12/22/1998US5851890 Process for forming integrated circuit structure with metal silicide contacts using notched sidewall spacer on gate electrode
12/22/1998US5851888 Controlled oxide growth and highly selective etchback technique for forming ultra-thin oxide
12/22/1998US5851886 Method of large angle tilt implant of channel region
12/22/1998US5851881 Method of making monos flash memory for multi-level logic
12/22/1998US5851880 Method of making nonvolatile memory elements with selector transistors
12/22/1998US5851873 Method of making semiconductor memory device
12/22/1998US5851869 Manufacture of semiconductor device having low contact resistance
12/22/1998US5851866 Fabrication method for CMOS with sidewalls
12/22/1998US5851862 Method of crystallizing a silicon film
12/22/1998US5851861 MIS semiconductor device having an LDD structure and a manufacturing method therefor
12/22/1998US5851858 Method for producing a multiplicity of microelectronic circuits on SOI
12/22/1998US5851857 High voltage power MOS device
12/22/1998US5851855 Process for manufacturing a MOS-technology power device chip and package assembly
12/22/1998US5851844 Ferroelectric semiconductor device and method of manufacture
12/22/1998US5851841 Method for producing ferroelectric film element, and ferroelectric film element and ferroelectric memory element produced by the method
12/22/1998US5851581 Semiconductor device fabrication method for preventing tungsten from removing
12/22/1998US5851440 Semiconductor device and liquid crystal display apparatus using the same
12/22/1998US5851366 Adhering metal to glass
12/17/1998WO1998057379A1 Lateral diffused mos transistor with trench source contact
12/17/1998WO1998057378A1 Latch-up free power mos-bipolar transistor
12/17/1998WO1998057377A1 A semiconductor device with a junction termination and a method for production thereof
12/17/1998WO1998057374A1 Power converter and the use thereof
12/17/1998WO1998057368A1 Nitrogen liner beneath transistor source/drain regions to retard dopant diffusion
12/17/1998WO1998057367A1 Hyperfrequency transistor with quasi-aligned structure and method for making same
12/17/1998WO1998057360A1 Long wavelength infrared photodetectors
12/17/1998WO1998035344A3 A nonvolatile memory structure
12/17/1998DE19825753A1 Semiconductor module with first buried layer in substrate
12/17/1998DE19741214C1 Semiconductor switch with temperature protection e.g. for excess temperature in semiconductor body
12/17/1998DE19725091A1 Transistor component with insulated gate electrode
12/17/1998DE19724909A1 Semiconductor device with mount for its securing to PCB
12/16/1998EP0884784A1 Integrated CMOS circuit device and process for manufacturing therefor
12/16/1998EP0884773A2 Method of making an MIS transistor
12/16/1998EP0884771A2 Group III-V compound semiconductor wafer
12/16/1998EP0884768A2 Fine structure and fabricating method thereof
12/16/1998EP0883901A1 MULTILAYER ZnO POLYCRYSTALLINE DIODE
12/16/1998EP0772889B1 Semiconductor component with a high blocking capability edge termination
12/16/1998EP0748520B1 Silicon carbide-based mis structure with high latch-up resistance
12/16/1998EP0646288B1 Single polysilicon layer flash e?2 prom cell
12/16/1998CN1202011A Ferroelectric memory
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