Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/1998
10/21/1998CN1196582A Semiconductor device
10/21/1998CN1196581A Semiconductor structure and forming method thereof
10/21/1998CN1196573A Manufacturing engineering for field effect transistor capable of changing its threshold voltage by hydrion
10/21/1998CN1040381C Double-channel thin-film transistor and making method thereof
10/20/1998US5825696 Semiconductor memory device including an SOI substrate
10/20/1998US5825689 Nonvolatile semiconductor memory device having data detecting circuit for memory cells block
10/20/1998US5825686 Multi-value read-only memory cell having an improved signal-to-noise ratio
10/20/1998US5825609 Compound electrode stack capacitor
10/20/1998US5825449 Liquid crystal display device and method of manufacturing the same
10/20/1998US5825437 Controlling the number of hillock defects
10/20/1998US5825249 Multistage source follower amplifier having a wide bandwidth and low power consumption
10/20/1998US5825207 Output buffer circuit
10/20/1998US5825205 Level-shift circuit for driving word lines of negative gate erasable type flash memory
10/20/1998US5825196 Method for detecting defects in an active matrix liquid crystal display panel
10/20/1998US5825079 Semiconductor diodes having low forward conduction voltage drop and low reverse current leakage
10/20/1998US5825075 Variable capacitance diode device and method of manufacturing same
10/20/1998US5825067 Dielectrically isolated IC merged with surge protection circuit and method for manufacturing the same
10/20/1998US5825066 Control of juction depth and channel length using generated interstitial gradients to oppose dopant diffusion
10/20/1998US5825065 Low voltage DMOS transistor
10/20/1998US5825064 Semiconductor volatile/nonvolatile memory
10/20/1998US5825063 Three-terminal silicon synaptic device
10/20/1998US5825062 Semiconductor device including a nonvolatile memory
10/20/1998US5825059 Semiconductor device and an interconnection structure of same
10/20/1998US5825055 Fabricating high-dielectric constant oxides on semiconductors using a GE buffer layer
10/20/1998US5825050 Thin film transistor having tapered active layer formed by controlling defect density and process of fabrication thereof
10/20/1998US5825049 Resonant tunneling device with two-dimensional quantum well emitter and base layers
10/20/1998US5825048 Semiconductor functional device and electronic circuit provided with the same
10/20/1998US5824904 Acceleration sensor using a piezoelectric element
10/20/1998US5824608 Semiconductor physical-quantity sensor and method for manufacturing same
10/20/1998US5824596 POCl3 process flow for doping polysilicon without forming oxide pillars or gate oxide shorts
10/20/1998US5824589 Method for forming bipolar transistor having a reduced base transit time
10/20/1998US5824587 No photolithography
10/20/1998US5824586 Method of manufacturing a raised source/drain MOSFET
10/20/1998US5824583 Non-volatile semiconductor memory and method of manufacturing the same
10/20/1998US5824580 Method of manufacturing an insulated gate field effect transistor
10/20/1998US5824577 MOSFET with reduced leakage current
10/20/1998US5824575 Semiconductor device and method of manufacturing the same
10/20/1998US5824574 Single crystal silicon, thin film transistor
10/20/1998US5824573 Method of manufacturing a semiconductor device
10/20/1998US5824572 Method of manufacturing thin film transistor
10/20/1998US5824569 Semiconductor device having ball-bonded pads
10/20/1998US5824565 Method of fabricating a sensor
10/20/1998US5824564 Method of manufacturing thin-film transistor array substrate
10/20/1998US5824560 Method of manufacturing a semiconductor device with BICMOS circuit
10/20/1998US5824453 Gallium arsenide with silicon nitride layer, forming a pattern using photolithography, masking, wet etching and forming grooves
10/20/1998US5824235 Method of manufacturing semiconductor device
10/20/1998US5824233 Micromechanical component with a dielectric movable structure, microsystem, and production process
10/20/1998US5824186 Method and apparatus for fabricating self-assembling microstructures
10/20/1998US5823027 Electrical/mechanical access control systems and methods
10/15/1998WO1998045883A1 A bipolar transistor structure
10/15/1998WO1998045882A1 Semiconductor quantum oscillation device
10/15/1998WO1998045881A1 Substrate with conductor formed of low-resistance aluminum alloy
10/15/1998WO1998026448A3 Rf power transistor having improved stability and gain
10/15/1998DE19813509A1 Thyristor with isolated gate
10/15/1998CA2285432A1 A bipolar transistor structure
10/15/1998CA2256378A1 Substrate with conductor formed of low-resistance aluminum alloy
10/14/1998EP0871227A2 Thin film transistor, manufacturing method therefor and liquid crystal display unit using the same
10/14/1998EP0871224A2 Semiconductor device having device supplying voltage higher than power supply voltage
10/14/1998EP0871179A1 Test method and circuit for semiconductor memory
10/14/1998EP0871135A1 Method of simulating semiconductor device
10/14/1998EP0870357A1 Active rectifier having minimal energy losses
10/14/1998EP0870332A1 Off-state gate-oxide field reduction in cmos
10/14/1998EP0870328A1 Rectifier diode
10/14/1998EP0870322A1 Trenched dmos transistor with buried layer for reduced on-resistance and ruggedness
10/14/1998EP0870321A1 Esd-protected thin film capacitor structures
10/14/1998EP0870319A1 A method for the manufacturing of micromachined structures and a micromachined structure manufactured using such method
10/14/1998EP0796507B1 Contoured-tub fermi-threshold field effect transistor and method of forming same
10/14/1998EP0734586A4 Method for fabricating self-assembling microstructures
10/14/1998EP0712536B1 A SEMICONDUCTOR HETEROSTRUCTURE HAVING A II-VI COMPOUND IN OHMIC CONTACT WITH A p-TYPE GaAs SUBSTRATE
10/14/1998CN1196134A Programmable non-volatile bidirectional switch for programmable logic
10/14/1998CN1195895A Semiconductor quantum oscillator device
10/14/1998CN1195894A 半导体器件 Semiconductor devices
10/14/1998CN1195893A 半导体器件 Semiconductor devices
10/14/1998CN1195885A Method for fabricating semiconductor device
10/14/1998CN1195879A Method for manufacturing semiconductor
10/14/1998CN1195786A Liquid crystal device, manufacturing method thereof and projection type display device
10/14/1998CN1040267C Transistor and method for fabricating the same
10/14/1998CN1040266C Block-able gate transistor
10/13/1998US5822264 Dynamic semiconductor memory device with SOI structure and body refresh circuitry
10/13/1998US5822248 Non-volatile semiconductor memory device using folded bit line architecture
10/13/1998US5822242 Asymmetric virtual ground p-channel flash cell with latid n-type pocket and method of fabrication therefor
10/13/1998US5822241 DRAM pass transistors
10/13/1998US5822239 Method of writing data to a single transistor type ferroelectric memory
10/13/1998US5822214 CAD for hexagonal architecture
10/13/1998US5821805 Charge pump circuit having different threshold biases of the transistors
10/13/1998US5821797 Protection circuit for semiconductor devices
10/13/1998US5821750 CCD magnetic field detecting apparatus
10/13/1998US5821623 First metal silicide layer selected from tungsten, tintanium, tantalum and molybdenum having first stoichiometry and second metal silicide layer having second stoichiometry
10/13/1998US5821620 Semiconductor interconnectors comprising a stable diffusion barrier titanium tungsten nitride layer; high temperature, high current, adhesion, corrosion resistance
10/13/1998US5821616 Power MOS device chip and package assembly
10/13/1998US5821606 Semiconductor device
10/13/1998US5821602 RF power transistor having improved stability and gain
10/13/1998US5821600 Isolation by active transistors with grounded gates
10/13/1998US5821598 Pyroelectric detector incorporating ferroelectric layer in transistor
10/13/1998US5821594 Semiconductor device having a self-aligned type contact hole
10/13/1998US5821589 Semiconductor device
10/13/1998US5821588 Transistor and semiconductor device
10/13/1998US5821586 Semiconductor device including a protective element having negative resistance characteristic
10/13/1998US5821585 Thin film transistor and manufacturing method thereof
10/13/1998US5821584 Thin film transistors comprising drain offset regions
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