Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/1999
03/25/1999WO1999009585B1 Semiconductor substrate and semiconductor device
03/25/1999WO1999000849A3 SiC SEMICONDUCTOR DEVICE COMPRISING A PN-JUNCTION AND A JUNCTION TERMINATION EXTENTION
03/25/1999WO1998059374A3 Insulated gate power semiconductor device having a semi-insulating semiconductor substrate
03/25/1999WO1998051819A9 Methods for electronic fluorescent perturbation for analysis and electronic perturbation catalysis for synthesis
03/25/1999DE19820050C1 Circuit arrangement with single electron components in CMOS logic circuit application
03/25/1999DE19740763A1 Cantilever arm manufacturing method for atomic force microscope (AFM)
03/25/1999DE19740195A1 Metal to semiconductor transistor forming semiconductor component for free wheeling diode
03/25/1999CA2304185A1 Quantum computer
03/25/1999CA2304045A1 Electron devices for single electron and nuclear spin measurement
03/25/1999CA2302758A1 Co-planar si and ge composite substrate and method of producing same
03/25/1999CA2302739A1 Lever arm for a scanning microscope
03/24/1999EP0903789A2 Nonvolatile semiconductor storage apparatus and production method of the same
03/24/1999EP0903788A2 Non volatile memory cell with high coupling capacity
03/24/1999EP0903787A2 Device for reducing noise in microwave transistors and method for its fabrication
03/24/1999EP0903779A2 Manufacture of field effect transistors
03/24/1999EP0903776A2 Titanium polycide stabilization with a porous barrier
03/24/1999EP0903754A2 Nonvolatile semiconductor memory
03/24/1999EP0903722A2 Data driver for an active liquid crystal display device
03/24/1999EP0903429A2 Process for producing heavily doped silicon
03/24/1999EP0902981A1 Schottky barrier rectifiers and methods of forming same
03/24/1999EP0902980A1 Long channel trench-gated power mosfet having fully depleted body region
03/24/1999EP0902979A1 Thyristor with integrated du/dt protection
03/24/1999EP0902974A1 Conductors for integrated circuits
03/24/1999EP0902843A1 Method for making a thin film of solid material, and uses thereof
03/24/1999EP0740794B1 Process for producing an acceleration sensor
03/24/1999EP0686268B1 Low noise solid state fluorscopic radiation imager
03/24/1999CN1211827A Ferroelectric memory transistor with resistively couple floating gate
03/24/1999CN1211826A 半导体器件 Semiconductor devices
03/24/1999CN1211825A Semiconductor ingrated circuit and its manufacturing method
03/24/1999CN1211814A Method of forming semiconductor device
03/24/1999CN1211801A Semiconductor memory
03/24/1999CN1211742A Foldable portable spectacles
03/23/1999US5886928 Non-volatile memory cell and method of programming
03/23/1999US5886924 Nonvolatile semiconductor memory having sub-arrays formed within pocket wells
03/23/1999US5886906 Method and apparatus of simulating semiconductor circuit
03/23/1999US5886905 Method of determining operating conditions for a nonvolatile semiconductor memory
03/23/1999US5886761 Process for producing actively addressing substrate, and liquid crystal display
03/23/1999US5886757 Liquid crystal display device and method for fabricating the same
03/23/1999US5886558 Semiconductor unit
03/23/1999US5886543 Power semiconductor switch having a load open-circuit detection circuit
03/23/1999US5886395 Semiconductor device having bipolar transistor with unique ratio of base gummel number to impurity concentration of collector region
03/23/1999US5886389 Field-effect transistor and method for producing the same
03/23/1999US5886388 Static semiconductor memory device and manufacturing method thereof
03/23/1999US5886386 Method for making a bipolar transistor for the protection of an integrated circuit against electrostatic discharges
03/23/1999US5886385 Semiconductor device and manufacturing method thereof
03/23/1999US5886384 Semiconductor component with linear current to voltage characteristics
03/23/1999US5886383 Integrated schottky diode and mosgated device
03/23/1999US5886381 MOS integrated device comprising a gate protection diode
03/23/1999US5886380 Semiconductor memory elements having quantum box floating gates
03/23/1999US5886379 Semiconductor memory device with increased coupling ratio
03/23/1999US5886378 Single polysilicon layer flash E2 PROM cell
03/23/1999US5886377 Semiconductor device and a method for manufacturing thereof
03/23/1999US5886376 EEPROM having coplanar on-insulator FET and control gate
03/23/1999US5886373 Field effect transistor
03/23/1999US5886372 Semiconductor device having two composite field effect transistors
03/23/1999US5886368 Dielectric; reduce write and erase voltage
03/23/1999US5886366 Thin film type monolithic semiconductor device
03/23/1999US5886365 Liquid crystal display device having a capacitator in the peripheral driving circuit
03/23/1999US5886364 Semiconductor device and process for fabricating the same
03/23/1999US5886360 Semiconductor device
03/23/1999US5886261 Microelectronic integrated sensor and method for producing the sensor
03/23/1999US5885897 Process for making contact to differently doped regions in a semiconductor device, and semiconductor device
03/23/1999US5885890 Method of forming contact openings and an electric component formed from the same and other methods
03/23/1999US5885889 Process of fabricating semiconductor device having doped polysilicon layer without segregation of dopant impurity
03/23/1999US5885888 Selectively etching anodized surface layer of aluminum gate electrode using solution containing phosphoric acid, acetic acid and/or nitric acid with a protective barrier forming material
03/23/1999US5885887 Method of making an igfet with selectively doped multilevel polysilicon gate
03/23/1999US5885886 Forming amorphous substrate regions by ion implantation of inactive ions while first and second impurity regions and source and drain regions are formed by ion implantation of active ions; improved current driving, short channel effects
03/23/1999US5885884 Process for fabricating a microcrystalline silicon structure
03/23/1999US5885878 Lateral trench MISFET and method of manufacturing the same
03/23/1999US5885877 Composite gate electrode incorporating dopant diffusion-retarding barrier layer adjacent to underlying gate dielectric
03/23/1999US5885876 Methods of fabricating short channel fermi-threshold field effect transistors including drain field termination region
03/23/1999US5885872 Method for manufacturing a semiconductor device having an adjustable channel width
03/23/1999US5885871 Forming nonvolatile memory cell having increased oxide thickness at edge of tunnel oxide and under edges of polysilicon capacitor plate to improve dielectric integrity of capacitor structure
03/23/1999US5885870 Method for forming a semiconductor device having a nitrided oxide dielectric layer
03/23/1999US5885868 Improving short channel effect of silicon-on-insulator (soi) wafer electrically-erasable programmable read only memory cells
03/23/1999US5885861 Ion implantating combinations of nitrogen and fluorine impurities into n-type regions and nitrogen and carbon into p-type regions to improve barrier
03/23/1999US5885860 Forming on a silicon carbide substrate a gate having dielectric spacer along an edge, doping substrate using gate as a mask, activating dopant at low temperature
03/23/1999US5885859 Methods of fabricating multi-gate, offset source and drain field effect transistors
03/23/1999US5885858 Method of manufacturing thin-film transistor
03/23/1999US5885847 Method of fabricating a compound semiconductor device
03/23/1999US5885761 Semiconductor device having an elevated active region formed from a thick polysilicon layer and method of manufacture thereof
03/23/1999CA2156333C Optoelectronic devices utilizing multiple quantum well pin structures and a process for fabricating the same
03/18/1999WO1999013516A1 Mounting having an aperture cover with adhesive locking feature for flip chip optical integrated circuit device
03/18/1999WO1999013514A2 Electrical devices and a method of manufacturing the same
03/18/1999WO1999013513A1 Non-volatile memory cell
03/18/1999WO1999013512A1 Semiconductor component with a drift zone
03/18/1999WO1999013511A2 P-doped silicon macromolecule with a multilayer structure, method for producing the same, device for carrying out said method, and a transistor constructed on the basis of the silicon macromolecule
03/18/1999WO1999013507A1 Cmos processing employing removable sidewall spacers for independently optimized n- and p-channel transistor performance
03/18/1999WO1999013342A1 Capacitive micro-flow sensor, method for manufacturing the same, and fixture for externally attaching the same
03/18/1999DE19817127A1 Nonvolatile semiconductor memory device especially an EEPROM or a flash-memory
03/18/1999DE19740906C1 Bipolar semiconductor device, e.g. diode, thyristor or IGBT
03/18/1999DE19740170A1 Field effect transistor (FET) controlled by electrostatic gate
03/18/1999DE19738732A1 Neutron-doped silicon wafer has very low radial and axial resistance variation
03/18/1999DE19738714A1 Integrierte Schaltung mit einem Schalttransistor An integrated circuit with a switching transistor
03/18/1999DE19738115C1 Schaltungsanordnung mit Einzelelektron-Bauelementen, Verfahren zu deren Betrieb und Anwendung des Verfahrens zur Addition von Binärzahlen Circuit arrangement having single-electron components, process for their operation and use of the method for addition of binary numbers
03/18/1999CA2301613A1 Mounting having an aperture cover with adhesive locking feature for flip chip optical integrated circuit device
03/17/1999EP0902483A1 Electrical device comprising a voltage dependant capacitance and method of manufacturing the same
03/17/1999EP0902482A1 SOI-MOSFET and fabrication process thereof
03/17/1999EP0902481A2 Thin film transistor with reduced parasitic capacitance
03/17/1999EP0902480A2 Bidirectional power semiconductor device
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