Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/1999
03/17/1999EP0902476A1 MOS system and methods of use
03/17/1999EP0902467A1 Isolation for semiconductor memory cell structures and processes for making them
03/17/1999EP0902466A1 Method for manufacturing a native MOS P-channel transistor with a process manufacturing non-volatile memories
03/17/1999EP0902463A1 Method for forming a plurality of parallel floating gate regions by avoiding poly stringers formation
03/17/1999EP0902438A1 Methods of erasing a memory device and a method of programming a memory device for low-voltage and low-power applications
03/17/1999EP0901689A1 Charge dissipation field emission device
03/17/1999EP0792524A4 Polycrystalline ferroelectric capacitor heterostructure employing hybrid electrodes
03/17/1999EP0763255A4 Substrate anchor for undercut silicon on insulator microstructures
03/17/1999EP0714555B1 High-voltage breakover diode
03/17/1999EP0659298B1 Ohmic contact structure between platinum and silicon carbide
03/17/1999CN1211084A Semiconductor device having LDD structure and method for producing the same
03/17/1999CN1211082A Semiconductor device and manufacturing process therefor
03/17/1999CN1211081A Bidirectional power semiconductor component
03/17/1999CN1211079A Nonvolatile semiconductor memory device
03/17/1999CN1211078A Nonvolatile semiconductor memory device
03/17/1999CN1211077A Storage unit and anonvolatile semiconductor storage having said storage unit
03/17/1999CN1211070A Semiconductor device fabrication method
03/17/1999CN1211068A Semiconductor devices and processes for making them
03/17/1999CN1042578C Method for making semiconductor device of silicon-on-insulator structure
03/16/1999US5883835 Control method for non-volatile memory
03/16/1999US5883832 Electrically erasable and programmable non-volatile storage location
03/16/1999US5883828 Low imprint ferroelectric material for long retention memory and method of making the same
03/16/1999US5883779 Pressure sensor
03/16/1999US5883682 Structure of a liquid crystal display and method of manufacturing the same
03/16/1999US5883566 Noise-isolated buried resistor
03/16/1999US5883422 Reduced parasitic capacitance semiconductor devices
03/16/1999US5883420 Sensor device having a pathway and a sealed cavity
03/16/1999US5883418 Layer is formed on a gate electrode and source/drain regions, gate electrode layer is not damaged even if a contact hole is formed in a planarized insulating layer
03/16/1999US5883416 Gate-contact structure to prevent contact metal penetration through gate layer without affecting breakdown voltage
03/16/1999US5883414 Electrostatic discharge protection device
03/16/1999US5883413 Lateral high-voltage DMOS transistor with drain zone charge draining
03/16/1999US5883412 Low gate resistance high-speed MOS-technology integrated structure
03/16/1999US5883411 Vertical insulated gate FET
03/16/1999US5883410 Edge wrap-around protective extension for covering and protecting edges of thick oxide layer
03/16/1999US5883409 EEPROM with split gate source side injection
03/16/1999US5883408 Semiconductor memory device and method for making the same
03/16/1999US5883407 Semiconductor device
03/16/1999US5883406 High-speed and high-density semiconductor memory
03/16/1999US5883404 Complementary heterojunction semiconductor device
03/16/1999US5883403 Power semiconductor device
03/16/1999US5883401 Monolithic semiconductor switch and supply circuit component
03/16/1999US5883399 Thin film transistor having double channels and its manufacturing method
03/16/1999US5883398 Device having a switch comprising a chromium layer and method for depositing chromium layers by sputtering
03/16/1999US5883397 Organic memory element or an organic operational element of small size with high density and high speed operation, based on inter molecular electron transfer for doping carriers controllable with light irradiation or voltage application and
03/16/1999US5883396 High-frequency wireless communication system on a single ultrathin silicon on sapphire chip
03/16/1999US5883003 Method for producing a semiconductor device comprising a refractory metal silicide layer
03/16/1999US5883001 Adapted for uv erase eproms.
03/16/1999US5882994 Nonvolatile semiconductor memory, and method of manufacturing the same
03/16/1999US5882986 Semiconductor chips having a mesa structure provided by sawing
03/16/1999US5882975 Method of fabricating salicide-structure semiconductor device
03/16/1999US5882974 High-performance PMOS transistor using a barrier implant in the source-side of the transistor channel
03/16/1999US5882969 Method for manufacturing an electrically writeable and erasable read-only memory cell arrangement
03/16/1999US5882967 Process for buried diode formation in CMOS
03/16/1999US5882965 Process for manufacturing an integrated CMOS circuit
03/16/1999US5882964 Gate electrodes of the complementary mos transistors are doped differently
03/16/1999US5882962 Method of fabricating MOS transistor having a P+ -polysilicon gate
03/16/1999US5882961 Method of manufacturing semiconductor device with reduced charge trapping
03/16/1999US5882960 Method of preparing a semiconductor having a controlled crystal orientation
03/16/1999US5882958 Damascene method for source drain definition of silicon on insulator MOS transistors
03/16/1999US5882952 Metalorganic chemical deposition
03/16/1999US5882401 Method for manufacturing silicon single crystal substrate for use of epitaxial layer growth
03/16/1999CA2151063C C-axis perovskite thin films grown on silicon dioxide
03/16/1999CA2140403C Reducing leakage current in a thin-film transistor with charge carrier densities that vary in two dimensions
03/16/1999CA2006161C Capacitive pressure sensor with minimized dielectric drift
03/11/1999WO1999012339A1 A display type image sensor
03/11/1999WO1999012261A1 Integrated circuit with a switching transistor
03/11/1999WO1999012214A1 Insulated gate semiconductor device and method for manufacturing the same
03/11/1999WO1999012213A1 Dmos with a wider channel and greater avalanche stability
03/11/1999WO1999012212A2 Lone-electron circuit arrangement, operating mode, and application for adding binary numbers
03/11/1999WO1999012211A1 Bipolar power transistors and manufacturing method
03/11/1999WO1999012207A1 Method of joining small parts and assembly of small parts
03/11/1999WO1999012188A2 Method of manufacturing a semiconductor device with a schottky junction
03/11/1999WO1998059350A3 Electronically tunable capacitor
03/11/1999WO1998058404A3 A substrate for high frequency integrated circuits
03/11/1999WO1998053489A3 Integrated circuit, components thereof and manufacturing method
03/11/1999DE19836284A1 Producing a power semiconductor device with a semi-insulating polysilicon layer
03/11/1999DE19836283A1 Power semiconductor device has a semi-insulating polysilicon layer
03/11/1999DE19835891A1 Semiconductor device, especially DRAM transistor production process
03/11/1999DE19820491A1 Non-volatile semiconductor memory device
03/11/1999DE19819439A1 Non-volatile semiconductor memory device
03/11/1999DE19818989A1 Non-volatile semiconductor memory device
03/11/1999DE19818779A1 MOS transistor semiconductor device for e.g. DRAM
03/11/1999DE19818518A1 Semiconductor device with a p-n junction
03/11/1999DE19817129A1 Semiconductor device has flanged contact via
03/11/1999DE19739684A1 Wafer stacking to form chip stacks
03/11/1999DE19739491A1 Transistor has a complex crystalline macromolecular base
03/11/1999CA2300127A1 Bipolar power transistors and manufacturing method
03/10/1999EP0901169A1 Controlled conduction device
03/10/1999EP0901163A2 Semiconductor device having laser-annealed semiconductor elements, and display device using this semiconductor device
03/10/1999EP0901161A2 Planar DMOS transistor fabricated by a three mask process
03/10/1999EP0901158A1 Smart power integrated circuit, method for its manufacturing and converter comprising such a circuit
03/10/1999CN1210371A Semiconductor device and manufacturing method of the same
03/10/1999CN1210370A Semiconductor device with insulated gate electrode and method of fabricating the same
03/10/1999CN1210369A Semiconductor device and method fo fabricating same
03/09/1999US5880991 Structure for low cost mixed memory integration, new NVRAM structure, and process for forming the mixed memory and NVRAM structure
03/09/1999US5880977 Mesh generation device and its method for generating meshes having a boundary protective layer
03/09/1999US5880794 Active matrix liquid crystal display and method with two anodizations
03/09/1999US5880527 Contact structure for semiconductor device
03/09/1999US5880518 Waterproof silicon oxide layer containing excess silicon disposed at an uppermost layer of the dielectric film
03/09/1999US5880516 Semiconductor device utilizing a pedestal collector region and method of manufacturing the same
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