| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 04/06/1999 | US5891783 Method of reducing fringe capacitance |
| 04/06/1999 | US5891782 Method for fabricating an asymmetric channel doped MOS structure |
| 04/06/1999 | US5891776 Methods of forming insulated-gate semiconductor devices using self-aligned trench sidewall diffusion techniques |
| 04/06/1999 | US5891775 Method of making nonvolatile semiconductor device having sidewall split gate for compensating for over-erasing operation |
| 04/06/1999 | US5891774 Method of fabricating EEPROM using oblique implantation |
| 04/06/1999 | US5891773 Non-volatile semiconductor storage apparatus and production thereof |
| 04/06/1999 | US5891769 Method for forming a semiconductor device having a heteroepitaxial layer |
| 04/06/1999 | US5891766 MIS semiconductor device and method of fabricating the same |
| 04/06/1999 | US5891765 Method of fabricating a gate array semiconductor integrated circuit device |
| 04/06/1999 | US5891763 Damascene pattering of SOI MOS transistors |
| 04/06/1999 | US5891761 Method for forming vertical interconnect process for silicon segments with thermally conductive epoxy preform |
| 04/06/1999 | US5891757 Method for forming a field-effect transistor having difference in capacitance between source and drain with respect to shield layer |
| 04/01/1999 | WO1999016158A2 Time-domain circuit modeller |
| 04/01/1999 | WO1999016118A1 Process for fabricating semiconductor device including antireflective etch stop layer |
| 04/01/1999 | WO1999016116A1 Method for manufacturing semiconductor device |
| 04/01/1999 | WO1999016077A1 Flash memory array |
| 04/01/1999 | WO1999003152A3 Semiconductor device with memory capacitor and method of manufacturing such a device |
| 04/01/1999 | WO1999003151A3 A process for manufacturing ic-components to be used at radio frequencies |
| 04/01/1999 | WO1998048608A3 Microbellows actuator |
| 04/01/1999 | DE19843716A1 Semiconductor acceleration sensor with multilayer structure for e.g. car |
| 04/01/1999 | DE19841753A1 Semiconductor static random access memory |
| 04/01/1999 | DE19818024A1 Semiconductor component with separating structure for high HV strength |
| 04/01/1999 | DE19741971A1 Direct-wafer-bond silicon-oxide-silicon substrate production |
| 04/01/1999 | DE19741970A1 Edge structure for semiconductor component e.g. diode |
| 04/01/1999 | DE19741167A1 Edge structure for semiconductor component, e.g. TGBT diode or thyristor |
| 03/31/1999 | EP0905792A2 Stacked-fringe integrated circuit capacitors |
| 03/31/1999 | EP0905791A2 Miniaturization of a semiconductor chip |
| 03/31/1999 | EP0905790A2 Nonvolatile semiconductor memory device and method for fabricating the same |
| 03/31/1999 | EP0905789A1 Semiconductor device having soi structure and method for manufacturing the device |
| 03/31/1999 | EP0905781A2 ESD protection diode |
| 03/31/1999 | EP0905769A2 Semiconductor integrated circuit device with bipolar transistors and method of fabricating same |
| 03/31/1999 | EP0905761A2 Method of manufacturing a field effect transistor |
| 03/31/1999 | EP0905760A2 Integrated MOS capacitor fabrication method and structure |
| 03/31/1999 | EP0905752A2 Method for fabricating conductive electrode for semiconductor device |
| 03/31/1999 | EP0905751A2 Method for minimizing lateral and vertical dopant diffusion in gate structures |
| 03/31/1999 | EP0905750A2 Reliable polycide gate stack with reduced sheet resistance |
| 03/31/1999 | EP0905475A1 Semiconductor strain sensor, method of manufacturing the sensor, and scanning probe microscope |
| 03/31/1999 | EP0904636A1 Power device with a short-circuit detector |
| 03/31/1999 | EP0904604A1 Fabrication of high-density trench dmos using sidewall spacers |
| 03/31/1999 | EP0904603A2 Transistor having a vertical channel |
| 03/31/1999 | EP0904601A1 Electronic devices and their manufacture |
| 03/31/1999 | EP0904599A1 METHOD FOR ENGRAVING THE GATE IN MOS TECHNOLOGY USING A SiON BASED HARD MASK |
| 03/31/1999 | EP0904588A1 A device and method for multi-level charge/storage and reading out |
| 03/31/1999 | EP0742957B1 Mos-controlled thyristor |
| 03/31/1999 | EP0737364B1 Semiconductor device comprising a ferroelectric memory element with a lower electrode provided with an oxygen barrier |
| 03/31/1999 | CN1212787A Bipolar SOI device having tilted PN-junction, and method for producing such device |
| 03/31/1999 | CN1212471A Miniaturization of semiconductor chip |
| 03/31/1999 | CN1212469A Slotted-form grid electrostatic inductor |
| 03/31/1999 | CN1212466A Nonvolatile semiconductor storage apparatus and production method of same |
| 03/31/1999 | CN1212459A Semiconductor device which improves heat reliability |
| 03/30/1999 | US5889705 Method for erasing electrically erasable and programmable memory cells |
| 03/30/1999 | US5889704 Load and leave memory cell |
| 03/30/1999 | US5889687 Simulator, simulation and fabrication methods of semiconductor device and storage medium storing program for executing the simulation method |
| 03/30/1999 | US5889680 Device simulation method for use in numerical analyses of a semiconductor device |
| 03/30/1999 | US5889573 Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and liquid crystal display equipment |
| 03/30/1999 | US5889374 Thyristor control switch for a bidirectional motor |
| 03/30/1999 | US5889329 Tri-directional interconnect architecture for SRAM |
| 03/30/1999 | US5889311 Semiconductor acceleration sensor |
| 03/30/1999 | US5889310 Semiconductor device with high breakdown voltage island region |
| 03/30/1999 | US5889306 Bulk silicon voltage plane for SOI applications |
| 03/30/1999 | US5889305 Non-volatile semiconductor memory device having storage cell array and peripheral circuit |
| 03/30/1999 | US5889304 Nonvolatile semiconductor memory device |
| 03/30/1999 | US5889303 Split-Control gate electrically erasable programmable read only memory (EEPROM) cell |
| 03/30/1999 | US5889298 Vertical JFET field effect transistor |
| 03/30/1999 | US5889297 High frequency semiconductor device with slots |
| 03/30/1999 | US5889293 Electrical contact to buried SOI structures |
| 03/30/1999 | US5889292 Channel region of crystllized sige layer, large carrier mobility |
| 03/30/1999 | US5889291 Semiconductor integrated circuit |
| 03/30/1999 | US5889290 Thin film transistor and manufacturing method thereof |
| 03/30/1999 | US5889288 Semiconductor quantum dot device |
| 03/30/1999 | US5889211 Media compatible microsensor structure and methods of manufacturing and using the same |
| 03/30/1999 | US5888891 Process for manufacturing a schottky diode with enhanced barrier height and high thermal stability |
| 03/30/1999 | US5888890 Method of manufacturing field effect transistor |
| 03/30/1999 | US5888889 Integrated structure pad assembly for lead bonding |
| 03/30/1999 | US5888885 Forming uniform grid of intersecting dislocation lines, nucleating two-dimensional array, replication on successively grown layers; molecular beam epitaxy |
| 03/30/1999 | US5888880 Trench transistor with localized source/drain regions implanted through selectively grown oxide layer |
| 03/30/1999 | US5888875 Diffusion barrier layer prevents diffusion into an overlying polysilicon layer when a subsequent dopant out diffusion step is performed; controlled resistivity and silicided areas, without increased masking steps |
| 03/30/1999 | US5888873 Method of manufacturing short channel MOS devices |
| 03/30/1999 | US5888870 Polishing the surface of the floating gate reduces surface irregularities and increases surface area for improved bonding, so a high quality interpoly dielectric can be thermally grown |
| 03/30/1999 | US5888869 Method of fabricating a flash memory device |
| 03/30/1999 | US5888867 Non-uniform threshold voltage adjustment in flash eproms through gate work function alteration |
| 03/30/1999 | US5888860 Method of making field effect transistor |
| 03/30/1999 | US5888859 Method of fabricating semiconductor device |
| 03/30/1999 | US5888858 Semiconductor device and fabrication method thereof |
| 03/30/1999 | US5888856 Doping polycrystalline silicon in self-alignment; perforating dielectric layer; hydrogen passivation |
| 03/30/1999 | US5888855 Method of manufacturing active matrix display |
| 03/30/1999 | US5888854 Method of manufacturing a DRAM having an SOI structure |
| 03/30/1999 | US5888852 Method for forming semiconductor microstructure, semiconductor device fabricated using this method, method for fabricating resonance tunneling device, and resonance tunnel device fabricated by this method |
| 03/30/1999 | US5888839 Method of manufacturing semiconductor chips for display |
| 03/30/1999 | US5888761 Etching method for forming air bridge pattern on silicon substrate |
| 03/30/1999 | US5888588 Process for forming a semiconductor device |
| 03/30/1999 | US5888296 Method for making a ferroelectric semiconductor device and a layered structure |
| 03/30/1999 | US5888294 Epitaxial growth rate varying method for side surface of semiconductor pattern |
| 03/30/1999 | CA2181846C Inp/ingaas monolithic integrated demultiplexer, photodetector, and heterojunction bipolar transistor |
| 03/26/1999 | CA2248385A1 Protective layer for integrated circuits and method for the manufacturing thereof |
| 03/25/1999 | WO1999014858A1 Quantum computer |
| 03/25/1999 | WO1999014809A1 Iii-v semiconductor component with heterojunction |
| 03/25/1999 | WO1999014804A1 CO-PLANAR Si AND Ge COMPOSITE SUBSTRATE AND METHOD OF PRODUCING SAME |
| 03/25/1999 | WO1999014614A1 Electron devices for single electron and nuclear spin measurement |
| 03/25/1999 | WO1999014555A1 Lever arm for a scanning microscope |