| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 04/14/1999 | CN1213846A Method of manufacturing semiconductor device using phase transition |
| 04/14/1999 | CN1213845A Method and apparatus for minimizing dopant outdiffusion in gate structure |
| 04/14/1999 | CN1213844A Electronic device and its mfg. method |
| 04/14/1999 | CN1213813A Semiconductor display device and method of driving the same |
| 04/14/1999 | CN1213812A Active matrix display device |
| 04/14/1999 | CN1213778A Semiconductor device and method for making the same |
| 04/13/1999 | US5894438 Method for programming and erasing a memory cell of a flash memory device |
| 04/13/1999 | US5894433 Static memory cell having independent data holding voltage |
| 04/13/1999 | US5894172 Semiconductor device with identification function |
| 04/13/1999 | US5894164 High voltage semiconductor device |
| 04/13/1999 | US5894163 Device and method for multiplying capacitance |
| 04/13/1999 | US5894162 High density EPROM cell and process for fabricating same |
| 04/13/1999 | US5894159 Silicon dioxide insulating layer; superior electrical charctaristics; used in transistors |
| 04/13/1999 | US5894157 MOS transistor having an offset resistance derived from a multiple region gate electrode |
| 04/13/1999 | US5894156 Semiconductor device having a high breakdown voltage isolation region |
| 04/13/1999 | US5894155 Metal gate high voltage integrated circuit/process |
| 04/13/1999 | US5894154 P-channel MOS transistor |
| 04/13/1999 | US5894153 Field implant for silicon controlled rectifier |
| 04/13/1999 | US5894151 Semiconductor device having reduced leakage current |
| 04/13/1999 | US5894150 Cell density improvement in planar DMOS with farther-spaced body regions and novel gates |
| 04/13/1999 | US5894149 Semiconductor device having high breakdown voltage and method of manufacturing the same |
| 04/13/1999 | US5894148 Floating gate FPGA cell with counter-doped select device |
| 04/13/1999 | US5894144 Semiconductor acceleration sensor |
| 04/13/1999 | US5894141 Bipolar semiconductor power controlling devices with heterojunction |
| 04/13/1999 | US5894140 Semiconductor device having recessed gate structures and method of manufacturing the same |
| 04/13/1999 | US5894139 Semiconductor device structure for insulated gate bipolar transistor |
| 04/13/1999 | US5894137 Semiconductor device with an active layer having a plurality of columnar crystals |
| 04/13/1999 | US5894065 Method for improving the intermediate dielectric profile, particularly for non-volatile memories |
| 04/13/1999 | US5893948 Melting and crystallizing amorpohous silicon layers; improved field-effect mobility |
| 04/13/1999 | US5893759 Semiconductor device and method of fabricating the same |
| 04/13/1999 | US5893747 Method of manufacturing a polysilicon film of a semiconductor device |
| 04/13/1999 | US5893745 Methods of forming semiconductor-on-insulator substrates |
| 04/13/1999 | US5893743 Process of fabricating semiconductor device |
| 04/13/1999 | US5893742 Co-implantation of arsenic and phosphorus in extended drain region for improved performance of high voltage NMOS device |
| 04/13/1999 | US5893741 Method for simultaneously forming local interconnect with silicided elevated source/drain MOSFET's |
| 04/13/1999 | US5893740 Method of forming a short channel field effect transistor |
| 04/13/1999 | US5893739 Asymmetrical P-channel transistor having a boron migration barrier and a selectively formed sidewall spacer |
| 04/13/1999 | US5893736 Methods of forming insulated gate semiconductor devices having spaced epitaxial JFET regions therein |
| 04/13/1999 | US5893730 Thin film semiconductor and method for manufacturing the same, semiconductor device and method for manufacturing the same |
| 04/13/1999 | US5893729 Method of making SOI circuit for higher temperature and higher voltage applications |
| 04/13/1999 | US5893511 Pressure sintering method for fastening electronic components on a substrate |
| 04/13/1999 | CA2160394C Method of making an organic thin film transistor, and article made by the method |
| 04/08/1999 | WO1999017376A2 Diode device having a low threshold voltage |
| 04/08/1999 | WO1999017375A1 Method of anodizing silicon substrate and method of producing acceleration sensor |
| 04/08/1999 | WO1999017374A1 Emitter turn-off thyristors (eto) |
| 04/08/1999 | WO1999017373A1 Semiconductor power component with enhanced latch-up resistance |
| 04/08/1999 | WO1999017372A1 Heterojunction bipolar transistor having wide bandgap, low interdiffusion base-emitter junction |
| 04/08/1999 | WO1999017371A1 Metal gate fermi-threshold field effect transistors |
| 04/08/1999 | WO1999017370A1 Field-effect transistor with high packing density and method for the production thereof |
| 04/08/1999 | WO1999017351A1 Reduction of gate-induced drain leakage in semiconductor devices |
| 04/08/1999 | WO1999017347A1 Method for forming a low-impedance conductor path area on a semiconductor substrate |
| 04/08/1999 | WO1999017294A1 Dual source side polysilicon select gate structure and programming method |
| 04/08/1999 | WO1999017155A1 Display pixels driven by silicon thin film transistors and method of fabrication |
| 04/08/1999 | WO1999007000A3 Two bit eeprom using asymmetrical charge trapping |
| 04/08/1999 | WO1999005720A3 Cmos circuit and method for the production thereof |
| 04/08/1999 | WO1999004054A3 Method of using hydrogen and oxygen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom |
| 04/08/1999 | WO1998057379A9 Lateral diffused mos transistor with trench source contact |
| 04/08/1999 | WO1998057360A9 Long wavelength infrared photodetectors |
| 04/08/1999 | DE19832552A1 New metal-air-semiconductor field effect transistor (MASFET) |
| 04/08/1999 | DE19823069A1 Semiconductor component with high performance, output transistor chip on semiconductor substrate |
| 04/08/1999 | DE19755868C1 High voltage SOI thin film transistor |
| 04/08/1999 | DE19743755A1 Polyhedral p-doped silicon macromolecule used as semiconductor device barrier layer |
| 04/08/1999 | DE19743342A1 Feldeffekttransistor hoher Packungsdichte und Verfahren zu seiner Herstellung Field effect transistor a high packing density and process for its preparation |
| 04/08/1999 | DE19743265A1 Halbleiter-Leistungsbauelement mit erhöhter Latch-up-Festigkeit Semiconductor power component with increased latch-up strength |
| 04/08/1999 | DE19742972A1 Verfahren zur Ausbildung eines niederohmigen Leitbahnbereichs auf einem Halbleitersubstrat A method of forming a low-Leitbahnbereichs on a semiconductor substrate |
| 04/08/1999 | DE19741363A1 Silicon-on-insulator field effect transistor e.g. for VLSI technology and memory |
| 04/07/1999 | EP0907206A1 Substrate through-contact and its fabrication method |
| 04/07/1999 | EP0907204A2 Chip size package semiconductor device and method of forming the same |
| 04/07/1999 | EP0764336A4 Micromechanical memory sensor |
| 04/07/1999 | EP0750789B1 Method for obtaining a semiconductor device in silicon carbide |
| 04/07/1999 | EP0681739B1 Micromachined relay and method of forming the relay |
| 04/07/1999 | EP0569470B1 Process for making a polysilicon thin film transistor |
| 04/07/1999 | CN1213458A Electronic means, in particular for switching electronic currents, for high off-state voltages and with low on-stage power losses |
| 04/07/1999 | CN1213185A Insulating gate type semiconductor device and method of fabricating the same |
| 04/07/1999 | CN1213184A Metal oxide semiconductor device and method of manufacturing the same |
| 04/07/1999 | CN1213180A Semiconductor integrated circuit device and method of designing same |
| 04/07/1999 | CN1213177A 静电放电保护电路 Electrostatic discharge protection circuit |
| 04/07/1999 | CN1213168A Method for fabricating semiconductor device |
| 04/07/1999 | CN1213164A Semiconductor device manufacturing method |
| 04/07/1999 | CN1213159A Reliable polysilicon-silicide grid laminate with reduced sheet resistance |
| 04/07/1999 | CN1213145A Electronic component, method for making, and target making electronic component |
| 04/07/1999 | CN1213081A Electronic device and method for forming membrane for electronic device |
| 04/06/1999 | USRE36185 Citrate buffer, hydrogen peroxide |
| 04/06/1999 | US5892714 Method of programming and/or verifying a threshold voltage level of a nonvolatile memory cell |
| 04/06/1999 | US5892709 Single level gate nonvolatile memory device and method for accessing the same |
| 04/06/1999 | US5892562 Liquid crystal electro-optic device |
| 04/06/1999 | US5892558 Wire electrode structure based on 2 or 3 terminal device employed in a liquid crystal display |
| 04/06/1999 | US5892260 SOI-type semiconductor device with variable threshold voltages |
| 04/06/1999 | US5892258 Read-only semiconductor memory device |
| 04/06/1999 | US5892257 Packing density for flash memories |
| 04/06/1999 | US5892255 Ferroelectric based capacitor for use in memory systems and method for fabricating the same |
| 04/06/1999 | US5892254 Integrated circuit capacitors including barrier layers having grain boundary filling material |
| 04/06/1999 | US5892251 Apparatus for transferring electric charges |
| 04/06/1999 | US5892248 Double photoresist layer self-aligned heterojuction bipolar transistor |
| 04/06/1999 | US5892247 Semiconductor device and a manufacturing method thereof |
| 04/06/1999 | US5891809 Manufacturable dielectric formed using multiple oxidation and anneal steps |
| 04/06/1999 | US5891798 Method for forming a High dielectric constant insulator in the fabrication of an integrated circuit |
| 04/06/1999 | US5891794 Oxygen-doped in-situ doped amorphous silicon multilayer gate structures |
| 04/06/1999 | US5891793 Transistor fabrication process employing a common chamber for gate oxide and gate conductor formation |
| 04/06/1999 | US5891792 Electrostatic discharge |