| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 04/27/1999 | US5897355 Method of manufacturing insulated gate semiconductor device to improve ruggedness |
| 04/27/1999 | US5897354 Method of forming a non-volatile memory device with ramped tunnel dielectric layer |
| 04/27/1999 | US5897353 Method of forming dielectric film of semiconductor memory device |
| 04/27/1999 | US5897349 Method for fabricating a capped gate conductor |
| 04/27/1999 | US5897347 Semiconductor, semiconductor device, and method for fabricating the same |
| 04/27/1999 | US5897345 Semiconductor device and process for fabricating the same |
| 04/27/1999 | US5897344 Method of making a thin film semiconductor device |
| 04/27/1999 | US5897343 Method of making a power switching trench MOSFET having aligned source regions |
| 04/27/1999 | US5897328 Thin film transistor, organic electroluminescence display device and manufacturing method of the same |
| 04/27/1999 | CA2160630C Protein-based semiconductor integrated circuit |
| 04/27/1999 | CA2139141C Quantum-well type semiconductor laser device having multi-layered quantum-well layer |
| 04/24/1999 | CA2251438A1 Process for producing thin-film transistors |
| 04/22/1999 | WO1999019913A1 Memory device having a crested tunnel barrier |
| 04/22/1999 | WO1999019912A1 Dual-band quantum-well infrared sensing array |
| 04/22/1999 | WO1999019910A1 Porous silicon oxycarbide integrated circuit insulator |
| 04/22/1999 | WO1999019902A1 Method of manufacturing a semiconductor device by low temperature cvd |
| 04/22/1999 | WO1999019900A2 Method of forming an electronic device |
| 04/22/1999 | WO1999019880A1 Nonvolatile pmos two transistor memory cell and array |
| 04/22/1999 | WO1999019734A2 Multi-element micro gyro |
| 04/22/1999 | DE3844958C2 Power semiconductor element on substrate section |
| 04/22/1999 | DE19827938A1 Integrated semiconductor circuit module with internal circuit |
| 04/22/1999 | DE19746395A1 Polyhedral p-doped silicon macromolecule used as semiconductor device barrier layer |
| 04/22/1999 | DE19746138A1 Spin polarisation direction detection method |
| 04/22/1999 | CA2306384A1 Method of forming an electronic device |
| 04/22/1999 | CA2305230A1 Memory device having a crested tunnel barrier |
| 04/21/1999 | EP0910126A2 MOS field effect transistor with an improved lightly doped diffusion region structure and method of forming the same |
| 04/21/1999 | EP0910120A2 Method of producing a ferroelectric thin film containing bismuth |
| 04/21/1999 | EP0910119A2 Method for oxidizing a structure during the fabrication of a semiconductor device |
| 04/21/1999 | EP0909972A2 Method of forming a high resolution liquid crystal display device |
| 04/21/1999 | EP0909937A1 Semiconductor strain sensor, method of manufacturing the sensor, and scanning probe microscope |
| 04/21/1999 | EP0909460A1 Hex metal on rectangular cells; metal or metal two is hex |
| 04/21/1999 | EP0909454A1 Semiconductor cathode and electron tube comprising a semiconductor cathode |
| 04/21/1999 | EP0731985B1 Improved mesh geometry for mos-gated semiconductor devices |
| 04/21/1999 | EP0727097B1 Structure and fabrication of bipolar transistors |
| 04/21/1999 | EP0682811B1 Lateral semiconductor-on-insulator (soi) semiconductor device having a buried diode |
| 04/21/1999 | CN1214799A Active matrix displays and method of making |
| 04/21/1999 | CN1214542A Integrated circuit fabrication method and structure |
| 04/21/1999 | CN1214540A Manufacture of MOS transistor with P+ polysilicon grid |
| 04/21/1999 | CN1214534A Fabrication method of semiconductor device equipped with silicide layer |
| 04/21/1999 | CN1043103C Semiconductor device and method for fabricating the same |
| 04/21/1999 | CN1043097C Method for manufacturing flash eeprom cell |
| 04/20/1999 | US5896317 Nonvolatile semiconductor memory device having data line dedicated to data loading |
| 04/20/1999 | US5896315 Nonvolatile memory |
| 04/20/1999 | US5896314 Asymmetric flash EEPROM with a pocket to focus electron injection and a manufacturing method therefor |
| 04/20/1999 | US5896172 Method of operating a CCD imager suitable for the implementation of such a method |
| 04/20/1999 | US5895960 Thin oxide mask level defined resistor |
| 04/20/1999 | US5895959 Input port electrostatic discharge protection circuit for an intergrated circuit |
| 04/20/1999 | US5895957 Minimum charge FET fabricated on an ultrathin silicon on sapphire wafer |
| 04/20/1999 | US5895956 Semiconductor memory device |
| 04/20/1999 | US5895955 MOS transistor employing a removable, dual layer etch stop to protect implant regions from sidewall spacer overetch |
| 04/20/1999 | US5895954 Field effect transistor with impurity concentration peak under gate electrode |
| 04/20/1999 | US5895953 Ohmic contact to lightly doped islands from a conductive rapid diffusion buried layer |
| 04/20/1999 | US5895952 Trench MOSFET with multi-resistivity drain to provide low on-resistance |
| 04/20/1999 | US5895951 MOSFET structure and fabrication process implemented by forming deep and narrow doping regions through doping trenches |
| 04/20/1999 | US5895950 Semiconductor device having a non-volatile memory and method of manufacturing such a semiconductor device |
| 04/20/1999 | US5895949 Semiconductor device having inversion inducing gate |
| 04/20/1999 | US5895948 Semiconductor device and fabrication process thereof |
| 04/20/1999 | US5895946 MOS random access memory having array of trench type one-capacitor/one-transistor memory cells |
| 04/20/1999 | US5895944 Charge coupled device image sensor and method of driving the same |
| 04/20/1999 | US5895941 Etchant that can etch wsi selectively with respect to inalas or ingaas. aqueous solution that contains citric acid, ammonium citrate, and hydrogen peroxide |
| 04/20/1999 | US5895939 Silicon carbide field effect transistor with increased avalanche withstand capability |
| 04/20/1999 | US5895938 Semiconductor device using semiconductor BCN compounds |
| 04/20/1999 | US5895937 Tapered dielectric etch in semiconductor devices |
| 04/20/1999 | US5895935 Display device having a switch with floating regions in the active layer |
| 04/20/1999 | US5895934 Negative differential resistance device based on tunneling through microclusters, and method therefor |
| 04/20/1999 | US5895933 Semiconductor device and method for its preparation |
| 04/20/1999 | US5895931 Semiconductor device |
| 04/20/1999 | US5895929 Low subthreshold leakage current HFET |
| 04/20/1999 | US5895853 Semiconductor acceleration sensor |
| 04/20/1999 | US5895851 Semiconductor yaw rate sensor with a vibrating movable section with vertical and horizontal displacement detection |
| 04/20/1999 | US5895766 Method of forming a field effect transistor |
| 04/20/1999 | US5895460 Apparatus for simulating a biological neuron |
| 04/20/1999 | US5895274 High-pressure anneal process for integrated circuits |
| 04/20/1999 | US5895260 Method of fabricating semiconductor devices and the devices |
| 04/20/1999 | US5895249 Integrated edge structure for high voltage semiconductor devices and related manufacturing process |
| 04/20/1999 | US5895248 Silicon deposited from a vapor comprising chlorine and silicon at reduced pressure |
| 04/20/1999 | US5895247 Method of forming a high performance, high voltage non-epi bipolar transistor |
| 04/20/1999 | US5895246 Method of making semiconductor device with air gap between the gate electrode and substrate during processing |
| 04/20/1999 | US5895242 Read-only memories and method for manufacturing the same |
| 04/20/1999 | US5895240 Method of making stepped edge structure of an EEPROM tunneling window |
| 04/20/1999 | US5895238 Doping technique for MOS devices |
| 04/20/1999 | US5895237 Narrow isolation oxide process |
| 04/15/1999 | WO1999018616A1 Nonvolatile semiconductor memory device and method of producing the same |
| 04/15/1999 | WO1999018615A1 An improved silicon carbide gate turn-off thyristor arrangement |
| 04/15/1999 | WO1999018608A1 METHOD FOR PRODUCING A MATRIX FROM THIN-FILM TRANSISTORS, INCLUDING WITH a:Si-H AS SEMICONDUCTOR, INTENDED FOR LIQUID CRYSTAL DISPLAYS |
| 04/15/1999 | WO1999009599A3 Vertical interconnect process for silicon segments with dielectric isolation |
| 04/15/1999 | DE19744098A1 LCD screen TFT matrix is produced using only three lacquering steps |
| 04/15/1999 | DE19743496A1 Insulating layer for an active diamond layer of a microelectronic component |
| 04/15/1999 | DE19743495A1 Insulating layer between an electrode and an active diamond layer of a microelectronic component |
| 04/14/1999 | EP0908954A2 Semiconductor memory device and manufacturing method thereof |
| 04/14/1999 | EP0908935A2 Fabrication method of semiconductor device equipped with silicide layer |
| 04/14/1999 | EP0908934A2 Method of manufacturing a gate electrode |
| 04/14/1999 | EP0907968A1 Integrated circuit device and method of making the same |
| 04/14/1999 | EP0907967A2 Soi-transistor circuitry employing soi-transistors and method of manufacture thereof |
| 04/14/1999 | EP0907881A1 Pressure sensor for mounting on the components side of a printed circuit board |
| 04/14/1999 | EP0907880A1 Pressure sensor component mounted on the insertion surface of a circuit board |
| 04/14/1999 | EP0494184B1 Mos device with integral esd protection |
| 04/14/1999 | CN1214150A Semiconductor device |
| 04/14/1999 | CN1213863A Nitrided gallium III-V group compound semiconductor device and its mfg.method |
| 04/14/1999 | CN1213849A Making method of transistor |