| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 05/06/1999 | EP0674798B1 Memory device |
| 05/06/1999 | DE19824242A1 Semiconductor manufacture process |
| 05/06/1999 | DE19822763A1 Power semiconductor device has a doped, oxygen-containing semiconductor substrate |
| 05/06/1999 | DE19746901A1 Vertical MOS transistor manufacture method for nano-electronics |
| 05/06/1999 | DE19746900A1 Vertikaler MOS-Transistor und Verfahren zu dessen Herstellung Vertical MOS transistor and method of producing the |
| 05/06/1999 | DE19746620A1 Halbleiterdiode Semiconductor diode |
| 05/06/1999 | DE19746619A1 Elektrisches Halbleiterbauelement Electric semiconductor device |
| 05/05/1999 | CN1216161A Charge dissipation field emission device |
| 05/05/1999 | CN1215930A Sub-quarter micron silicon-on-insulator MOS field effect transistor |
| 05/05/1999 | CN1215929A Circuit breaking thyratron having barrier |
| 05/05/1999 | CN1215928A Semiconductor device and method of fabricating the same |
| 05/05/1999 | CN1215927A Solid state imaging device and manufacturing method thereof |
| 05/05/1999 | CN1215926A Semiconductor device of high-voltage CMOS structure and method of fabricating same |
| 05/05/1999 | CN1215925A Semiconductor memory device and manufacturing method thereof |
| 05/05/1999 | CN1215894A Method of erasing data in nonvolatile semiconductor memory devices |
| 05/05/1999 | CN1215833A Sensor with diaphragm |
| 05/05/1999 | CN1043275C 半导体存储装置 The semiconductor memory device |
| 05/04/1999 | US5901084 Nonvolatile semiconductor memory device having floating gate electrode |
| 05/04/1999 | US5901080 Nonvolatile semiconductor memory device |
| 05/04/1999 | US5900980 Apparatus and method for laser radiation |
| 05/04/1999 | US5900666 Ultra-short transistor fabrication scheme for enhanced reliability |
| 05/04/1999 | US5900663 Quasi-mesh gate structure for lateral RF MOS devices |
| 05/04/1999 | US5900662 MOS technology power device with low output resistance and low capacitance, and related manufacturing process |
| 05/04/1999 | US5900656 Semiconductor memory device and method for fabricating the same |
| 05/04/1999 | US5900654 Radiation hardened charge coupled device |
| 05/04/1999 | US5900653 High electron mobility transistor having thin, low resistance schottky contact layer |
| 05/04/1999 | US5900652 Apparatus for the localized reduction of the lifetime of charge carriers, particularly in integrated electronic devices |
| 05/04/1999 | US5900651 High-withstand-voltage semiconductor device |
| 05/04/1999 | US5900648 Improved surface channel conductivity in the forward state |
| 05/04/1999 | US5900646 Reacting conductive layer with growth nuclei containing at least one element of group iiib, iv, vb and viib; use in portable computers |
| 05/04/1999 | US5900641 Field effect semiconductor device having a reduced leakage current |
| 05/04/1999 | US5899750 Fine processing method |
| 05/04/1999 | US5899747 Method for forming a tapered spacer |
| 05/04/1999 | US5899742 Manufacturing method for self-aligned local interconnects and contacts simultaneously |
| 05/04/1999 | US5899734 Method of fabricating semiconductor device |
| 05/04/1999 | US5899732 Method of implanting silicon through a polysilicon gate for punchthrough control of a semiconductor device |
| 05/04/1999 | US5899721 Method of based spacer formation for ultra-small sapcer geometries |
| 05/04/1999 | US5899720 Process of fabricating salicide structure from high-purity reproducible cobalt layer without sacrifice of leakage current and breakdown voltage of P-N junction |
| 05/04/1999 | US5899719 Sub-micron MOSFET |
| 05/04/1999 | US5899712 Method for fabricating silicon-on-insulator device |
| 05/04/1999 | US5899710 Method for forming field effect transistor having multiple gate electrodes surrounding the channel region |
| 05/04/1999 | US5899709 Method for forming a semiconductor device using anodic oxidation |
| 05/04/1999 | US5899708 Method for forming a thin film transistor using an electrostatic shield |
| 05/04/1999 | US5899548 Liquid crystal display device and method for manufacturing same |
| 04/29/1999 | WO1999021231A1 Semiconductor diode |
| 04/29/1999 | WO1999021230A1 Field effect semiconductor component |
| 04/29/1999 | WO1999021216A1 Method for epitactical production of semi-insulating iii-v compound semiconductors |
| 04/29/1999 | WO1999021215A2 Methods of forming power semiconductor devices having merged split-well body regions therein and devices formed thereby |
| 04/29/1999 | WO1999021175A2 Integrated circuit layout methods and layout structures |
| 04/29/1999 | WO1999021022A2 Method for detecting a current of spin polarized electrons in a solid body |
| 04/29/1999 | WO1999008323A9 Rf power device having voltage controlled linearity |
| 04/29/1999 | DE19823140A1 Sense FET with main cell array (MCA) |
| 04/29/1999 | DE19756324C1 MOS-gate switched power semiconductor device |
| 04/29/1999 | DE19746974A1 Gate turn-off (GTO) thyristor with NPNP four-layer structure in semiconductor substrate |
| 04/29/1999 | CA2310566A1 Semiconductor diode |
| 04/28/1999 | EP0911883A2 Bipolar transistor with a SiGe epitaxial base layer and method of fabrication the same |
| 04/28/1999 | EP0911882A1 Article comprising an oxide layer on GaN, and method of making the article |
| 04/28/1999 | EP0911879A1 Ferroelectric device for semiconductor integrated circuit and method for manufacturing the same |
| 04/28/1999 | EP0911872A2 Method of manufacturing thin film transistors |
| 04/28/1999 | EP0911871A2 Semiconductor memory device with ferroelectric thin film |
| 04/28/1999 | EP0911869A2 Low temperature method for forming a uniform thin oxide layer |
| 04/28/1999 | EP0911854A1 Electron emission device and display device using the same |
| 04/28/1999 | EP0911606A1 Integrated angular speed sensor device and production method thereof |
| 04/28/1999 | EP0911431A1 Single crystal silicon wafer with increased mechanical resistance |
| 04/28/1999 | EP0911396A2 Methods for generating polynucleotides having desired characteristics by iterative selective and recombination |
| 04/28/1999 | EP0910869A1 A METHOD FOR PRODUCING A CHANNEL REGION LAYER IN A SiC-LAYER FOR A VOLTAGE CONTROLLED SEMICONDUCTOR DEVICE |
| 04/28/1999 | EP0876509A4 Methods for generating polynucleotides having desired characteristics by iterative selection and recombination |
| 04/28/1999 | EP0839390B1 Electrically erasable and programmable non-volatile storage location |
| 04/28/1999 | CN1215229A Method for making semiconductor device |
| 04/28/1999 | CN1215225A Raise of anti-mechanical force single crystal wafer |
| 04/28/1999 | CN1215224A Transistor and making method thereof |
| 04/28/1999 | CN1215223A Transistor, semiconductor circuit and making method thereof |
| 04/28/1999 | CN1043173C Semiconductor diode consisting of groove shape casing component and packaging method |
| 04/27/1999 | US5898616 Semiconductor nonvolatile memory and source circuit for this memory |
| 04/27/1999 | US5898615 Semiconductor memory device having non-volatile memory cells connected in series |
| 04/27/1999 | US5898613 pMOS analog EEPROM cell |
| 04/27/1999 | US5898606 Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor |
| 04/27/1999 | US5898218 Structure for mounting electronic components and method for mounting the same |
| 04/27/1999 | US5898210 Semiconductor diode with high turn on and breakdown voltages |
| 04/27/1999 | US5898207 Method for making a semiconductor device |
| 04/27/1999 | US5898204 Thin-film transistor, and its semiconductor device, active matrix board, and LCD device |
| 04/27/1999 | US5898203 Semiconductor device having solid phase diffusion sources |
| 04/27/1999 | US5898202 Selective spacer formation for optimized silicon area reduction |
| 04/27/1999 | US5898201 Low resistance, high breakdown voltage, power mosfet |
| 04/27/1999 | US5898200 Microwave integrated circuit |
| 04/27/1999 | US5898199 Semiconductor device and power converter using same |
| 04/27/1999 | US5898198 RF power device having voltage controlled linearity |
| 04/27/1999 | US5898197 Non-volatile semiconductor memory devices |
| 04/27/1999 | US5898190 P-type electrode structure and a semiconductor light emitting element using the same structure |
| 04/27/1999 | US5898188 Semiconductor device and method for its fabrication |
| 04/27/1999 | US5898187 Thin film transistor |
| 04/27/1999 | US5898186 Reduced terminal testing system |
| 04/27/1999 | US5898007 Implanting impurity ions sequentially four times on a substrate, forming well and channel stop, two step rapid annealing |
| 04/27/1999 | US5898006 Method of manufacturing a semiconductor device having various types of MOSFETS |
| 04/27/1999 | US5897939 Substrate of the silicon on insulator type for the production of transistors and preparation process for such a substrate |
| 04/27/1999 | US5897705 Process for the production of an epitaxially coated semiconductor wafer |
| 04/27/1999 | US5897365 Removal of titanium oxide layer through an evaporation of titamium fluoride covered from the titanium oxide |
| 04/27/1999 | US5897363 Shallow junction formation using multiple implant sources |
| 04/27/1999 | US5897359 Integrated circuit which is not limited in thickness and not affected by the size and density of its pttern |
| 04/27/1999 | US5897358 Forming fluorine barrier layer between active regions, then forming dielectric layer over barier, forming gate electrode over dielectric |