Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/1999
05/18/1999US5905284 Semiconductor device with a particular DMISFET structure
05/18/1999US5905283 Semiconductor device
05/18/1999US5905282 Multi-terminal surge protection device
05/18/1999US5905278 Semiconductor device having a dielectric film and a fabrication process thereof
05/18/1999US5905277 Field-effect transistor and method of manufacturing the same
05/18/1999US5905274 Thin-film transistor and method of making same
05/18/1999US5905273 Electronic device
05/18/1999US5905256 Imaging device including output amplifier circuit having variable GAIN BANDWIDTH PRODUCT
05/18/1999US5905203 Micromechanical acceleration sensor
05/18/1999US5905044 Mass manufacturing method of semiconductor acceleration and vibration sensors
05/18/1999US5904770 Crystallization; catalysis with metal silicide; radiating with laser light
05/18/1999US5904574 Process of making semiconductor device and improved semiconductor device
05/18/1999US5904564 Method for fabricating MOSFET having cobalt silicide film
05/18/1999US5904554 Method for fabricating ohmic electrode and multi-layered structure for ohmic fabricating electrode
05/18/1999US5904550 Method of producing a semiconductor device
05/18/1999US5904545 Apparatus for fabricating self-assembling microstructures
05/18/1999US5904544 Method of making a stable high voltage semiconductor device structure
05/18/1999US5904536 Self aligned poly emitter bipolar technology using damascene technique
05/18/1999US5904530 Method of making LDD structure spaced from channel doped region
05/18/1999US5904529 Method of making an asymmetrical IGFET and providing a field dielectric between active regions of a semiconductor substrate
05/18/1999US5904528 Method of forming asymmetrically doped source/drain regions
05/18/1999US5904525 Fabrication of high-density trench DMOS using sidewall spacers
05/18/1999US5904524 Method of making scalable tunnel oxide window with no isolation edges
05/18/1999US5904523 Process for device fabrication in which a layer of oxynitride is formed at low temperatures
05/18/1999US5904518 Method of manufacturing a semiconductor IC device having single transistor type nonvolatile memory cells
05/18/1999US5904517 Ultra thin high K spacer material for use in transistor fabrication
05/18/1999US5904516 Transistor structure and method for fabricating the same
05/18/1999US5904515 Method for fabricating a thin film transistor with the source, drain and channel in a groove in a divided gate
05/18/1999US5904514 Method for performing anodic oxidation
05/18/1999US5904513 Method of forming thin film transistors
05/18/1999US5904511 Method of forming a liquid crystal device
05/18/1999US5904510 Power transistor device having ultra deep increased concentration region
05/18/1999US5904509 Method of manufacturing a thin film transistor using anodic oxidation
05/18/1999US5904508 Semiconductor device and a method of manufacturing the same
05/18/1999US5904494 Fabrication process for solid-state image pick-up device with CCD register
05/14/1999WO1999023705A1 Passive hf element and method for operating, producing and determining characteristic properties of the same
05/14/1999WO1999023704A1 Semiconductor component
05/14/1999WO1999023703A1 High voltage resistant edge structure for semiconductor elements
05/14/1999WO1999023694A1 Wiring structure of semiconductor device, electrode, and method for forming them
05/14/1999WO1999023661A1 High density ferroelectric memory with increased channel modulation and double word ferroelectric memory cell for constructing the same
05/14/1999WO1999008325A3 Electrode means, with or without functional elements and an electrode device formed of said means
05/12/1999EP0915521A2 High voltage MOSFET structure
05/12/1999EP0915517A2 Semiconductor device
05/12/1999EP0915510A1 CMOS semiconductor device and method of fabricating the same
05/12/1999EP0915509A1 Process for integrating, in a same semiconductor chip, MOS technology devices with different threshold voltages
05/12/1999EP0915503A2 Semiconductor device for use in a light valve device, and process for manufacturing the same
05/12/1999EP0915479A2 Nonvolatile semiconductor memory device and method of reading data therefrom
05/12/1999EP0915365A2 Thin-film transistor with light-shielding film for use in liquid crystal devices, and method of making the same
05/12/1999EP0914682A2 Radiation sensors
05/12/1999EP0914658A1 Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping
05/12/1999EP0885460A4 Trenched dmos transistor with lightly doped tub
05/12/1999EP0664051B1 METHOD FOR FORMING THIN TUNNELING WINDOWS IN EEPROMs
05/12/1999EP0628996B1 High withstand-voltage semiconductor device with dielectric isolation
05/12/1999DE19748523A1 Halbleiterbauelement Semiconductor device
05/12/1999CN1216635A Os rectifying schottky and ohmic junction and W/WC/TiC ohmic contacts on sic
05/12/1999CN1216296A Method of producing bismuth layer structured ferroelectric thin film
05/11/1999US5903580 Fault simulator of creating a signal pattern for use in a fault inspection of a semiconductor integrated circuit
05/11/1999US5903494 Electrically programmable memory cell
05/11/1999US5903424 Method for protecting an integrated circuit against electro-static discharges
05/11/1999US5903326 Trainable RF system for remotely controlling household appliances
05/11/1999US5903249 Method for driving active matrix display device
05/11/1999US5903055 Aluminum, niobium, zirconium, tantalum; low electrical resistance
05/11/1999US5903053 Semiconductor device
05/11/1999US5903047 Low temperature-deposited passivation film over semiconductor device
05/11/1999US5903038 Semiconductor sensing device and method for fabricating the same
05/11/1999US5903037 GaAs-based MOSFET, and method of making same
05/11/1999US5903033 Semiconductor device including resistance element with superior noise immunity
05/11/1999US5903029 Insulated-gate field-effect transistor and method for producing the same
05/11/1999US5903027 MOSFET with solid phase diffusion source
05/11/1999US5903024 Stacked and trench type DRAM capacitor
05/11/1999US5903020 Controlling current flow
05/11/1999US5903018 Gallium aluminum indium arsenide; increasing concentration of indium from emitter base to base-collector
05/11/1999US5903015 Field effect transistor using diamond
05/11/1999US5903014 Semiconductor device for driving a substrate of an electro-optical device
05/11/1999US5903013 Thin film transistor and method of manufacturing the same
05/11/1999US5903010 Quantum wire switch and switching method
05/11/1999US5902995 CCD image sensor with overflow barrier for discharging excess electrons at high speed
05/11/1999US5902131 Dual-level metalization method for integrated circuit ferroelectric devices
05/11/1999US5902130 Thermal processing of oxide-compound semiconductor structures
05/11/1999US5902129 Forming an uniform thickness high temperature cobalt silicide layer by depositing a capping titanium layer to prevent exposing to oxygen gas prior to the annealing step
05/11/1999US5902125 Method to form stacked-Si gate pMOSFETs with elevated and extended S/D junction
05/11/1999US5902117 PN-diode of SiC and a method for production thereof
05/06/1999WO1999022409A2 Semiconductor device comprising a half-bridge circuit
05/06/1999WO1999022408A1 Vertical mos transistor and method for the production thereof
05/06/1999WO1999022407A1 Lateral silicon carbide semiconductor device having a drift region with a varying doping level
05/06/1999WO1999013511A3 P-doped silicon macromolecule with a multilayer structure, method for producing the same, device for carrying out said method, and a transistor constructed on the basis of the silicon macromolecule
05/06/1999EP0913872A1 Insulated gate bipolar transistor
05/06/1999EP0913871A1 Nonvolatile memory point
05/06/1999EP0913860A2 Method of manufacturing a thin film transistor
05/06/1999EP0913859A1 Semiconductor device and method for manufacturing the same
05/06/1999EP0913850A1 Narrow titanium-containing wire, process for producing narrow titanium-containing wire, structure, and electron-emitting device
05/06/1999EP0913833A2 Non-volatile semiconductor memory device
05/06/1999EP0913719A2 Connection terminal structure for liquid crystal display and semiconductor device, and method of producing the same
05/06/1999EP0913678A2 Semiconductor pressure sensor
05/06/1999EP0913508A2 Carbon nanotube device, manufacturing method of carbon nanotube device, and electron emitting device
05/06/1999EP0913000A1 Field effect controllable semiconductor component
05/06/1999EP0912999A2 SiC SEMICONDUCTOR DEVICE COMPRISING A pn JUNCTION WITH A VOLTAGE ABSORBING EDGE
05/06/1999EP0912998A1 Method for cmos latch-up improvement by mev billi (buried implanted layer for lateral isolation) plus buried layer implantation
05/06/1999EP0912185A1 Novel pharmaceutical compositions having steroid nitrate ester derivatives useful as anti-inflammatory drugs
05/06/1999EP0815595A4 UNCOOLED YBaCuO THIN FILM INFRARED DETECTOR
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