| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 06/01/1999 | US5908315 Method for forming a test structure to determine the effect of LDD length upon transistor performance |
| 06/01/1999 | US5908313 Method of forming a transistor |
| 06/01/1999 | US5908312 Semiconductor device fabrication |
| 06/01/1999 | US5908309 Fabrication method of semiconductor device with CMOS structure |
| 06/01/1999 | US5908307 Fabrication method for reduced-dimension FET devices |
| 06/01/1999 | US5908306 Method for making a semiconductor device exploiting a quantum interferences effect |
| 06/01/1999 | CA2106713C Structure and method of making a capacitor for an integrated circuit |
| 06/01/1999 | CA2002305C Method to produce a display screen with a matrix of transistors provided with an optical mask |
| 05/27/1999 | WO1999026297A1 Epitaxial wafer and compound semiconductor device |
| 05/27/1999 | WO1999026296A2 A SEMICONDUCTOR DEVICE OF SiC AND A TRANSISTOR OF SiC HAVING AN INSULATED GATE |
| 05/27/1999 | WO1999026295A1 High voltage semiconductor component |
| 05/27/1999 | WO1999026294A1 High power density microwave hbt with uniform signal distribution |
| 05/27/1999 | WO1999026293A2 Semiconductor component and manufacturing method for semiconductor component |
| 05/27/1999 | WO1999026292A2 Semiconductor device of sic with insulating layer and a refractory metal nitride layer |
| 05/27/1999 | WO1999026284A1 Ferroelectric memory or a method of producing the same |
| 05/27/1999 | WO1999012188A3 Method of manufacturing a semiconductor device with a schottky junction |
| 05/27/1999 | DE19853441A1 MOS transistor has a self-aligned sequence of lightly, moderately and heavily doped impurity layers |
| 05/27/1999 | DE19815907C1 Field effect semiconductor element |
| 05/27/1999 | DE19800647C1 SOI HV switch with FET structure |
| 05/27/1999 | CA2310280A1 Semiconductor component and manufacturing method for semiconductor component |
| 05/27/1999 | CA2310005A1 Ferroelectric memory or a method of producing the same |
| 05/26/1999 | EP0918353A1 A method of manufacturing a recessed insulated gate field-effect semiconductor device |
| 05/26/1999 | EP0917738A2 Lateral mos transistor device |
| 05/26/1999 | EP0917737A1 Semiconductor device provided with a metallization with a barrier layer comprising at least titanium, tungsten, or nitrogen, and method of manufacturing same |
| 05/26/1999 | EP0917733A1 Integrated circuit device manufacture |
| 05/26/1999 | EP0725939B1 Head-mounted display system |
| 05/26/1999 | CN1217818A Thin film ferroelectric capacitors having improved memory retention through use of smooth bottom electrode structures |
| 05/26/1999 | CN1217620A Image inducer having electronic optical shutter |
| 05/26/1999 | CN1217581A Semiconductor device and mfg. method therefor |
| 05/26/1999 | CN1217578A Semiconductor device of complementary metal oxide |
| 05/26/1999 | CN1217577A Semiconductor device, electrostatic discharge protective element and method for preventing insulator from breaking through |
| 05/26/1999 | CN1217572A Method for producing semiconductor device |
| 05/25/1999 | US5907789 Method of forming a contact-hole of a semiconductor element |
| 05/25/1999 | US5907784 Method of making multi-layer gate structure with different stoichiometry silicide layers |
| 05/25/1999 | US5907780 Incorporating silicon atoms into a metal oxide gate dielectric using gas cluster ion beam implantation |
| 05/25/1999 | US5907776 Method of forming a semiconductor structure having reduced threshold voltage and high punch-through tolerance |
| 05/25/1999 | US5907762 Method of manufacture of single transistor ferroelectric memory cell using chemical-mechanical polishing |
| 05/25/1999 | US5907506 Erasing method and erasing device for non-volatile semiconductor memory |
| 05/25/1999 | US5907470 Dielectric thin film capacitor element |
| 05/25/1999 | US5907376 Liquid crystal display having an active matrix substrate with thermosetting inter-layer insulating film with a thickness of greater than 2 μm |
| 05/25/1999 | US5907357 Switching circuit and charge transfer device using same |
| 05/25/1999 | US5907313 Matrix-type display device |
| 05/25/1999 | US5907188 Semiconductor device with conductive oxidation preventing film and method for manufacturing the same |
| 05/25/1999 | US5907183 Non-volatile semiconductor memory device |
| 05/25/1999 | US5907182 Semiconductor device having element with high breakdown voltage |
| 05/25/1999 | US5907181 Method for forming a microelectronic device |
| 05/25/1999 | US5907180 Ballast monitoring for radio frequency power transistors |
| 05/25/1999 | US5907179 Schottky diode assembly and production method |
| 05/25/1999 | US5907177 Semiconductor device having a tapered gate electrode |
| 05/25/1999 | US5907174 Electrostatic discharge protecting transistor |
| 05/25/1999 | US5907173 High voltage field effect transistor and method of fabricating the same |
| 05/25/1999 | US5907172 Split-gate flash memory cell structure |
| 05/25/1999 | US5907169 Self-aligned and process-adjusted high density power transistor with gate sidewalls provided with punch through prevention and reduced JFET resistance |
| 05/25/1999 | US5907168 Low noise Ge-JFETs |
| 05/25/1999 | US5907165 Control of the diffusion depth of the metal contact layer is critical,multilayer system pd-pt-au |
| 05/25/1999 | US5907164 InAlAs/InGaAs heterojunction field effect type semiconductor device |
| 05/25/1999 | US5907161 Semiconductor device including doped spontaneously formed superlattice layer |
| 05/25/1999 | US5907159 Hot electron device and a resonant tunneling hot electron device |
| 05/25/1999 | US5906708 Vapor depositing an etching-stop dielectric layer |
| 05/25/1999 | US5906670 Spraying toward substrate aerosol droplets of metal salt dissolved in volatile solvent, desolventizing and reacting droplets while airborne with gas phase reagent to form a metal or metal compound to be coated onto substrate |
| 05/25/1999 | CA2131100C Crystallographically aligned ferroelectric films usable in memories and method of crystallographically aligning perovskite films |
| 05/20/1999 | WO1999025030A1 Semiconductor substrate and method for making the same |
| 05/20/1999 | WO1999025026A1 Circuitry with at least one capacitor and process for producing the same |
| 05/20/1999 | WO1999025025A1 Mos transistor and process for producing the same |
| 05/20/1999 | WO1999025024A1 Quantum ridges and tips |
| 05/20/1999 | WO1999025021A1 Preventing boron penetration through thin gate oxide of p-channel devices in advanced cmos technology |
| 05/20/1999 | WO1999025016A1 Method of semiconductor device fabrication |
| 05/20/1999 | WO1999025014A1 Dielectric element and manufacturing method therefor |
| 05/20/1999 | WO1999025003A2 Manufacture of a semiconductor device with a poly-emitter bipolar transistor |
| 05/20/1999 | DE19851382A1 Producing compound semiconductor hereto-junction bipolar transistor |
| 05/20/1999 | DE19750827A1 Power semiconductor component with anode and cathode |
| 05/20/1999 | DE19750413A1 IGBT semiconductor body between two main surfaces |
| 05/20/1999 | DE19749378A1 MOS-Transistor und Verfahren zu dessen Herstellung MOS transistor and method of producing the |
| 05/19/1999 | EP0917360A2 Solid-state image sensing apparatus, method for driving the same and camera |
| 05/19/1999 | EP0917211A2 Moldless semiconductor device and photovoltaic device module making use of the same |
| 05/19/1999 | EP0917207A1 Semiconductor charge transfer device |
| 05/19/1999 | EP0917201A2 Complementary MOS semiconductor device |
| 05/19/1999 | EP0917200A1 Semiconductor device, electrostatic discharge protection device, and dielectric breakdown preventing method |
| 05/19/1999 | EP0917194A2 Alignment of a contact hole |
| 05/19/1999 | EP0916162A1 Method of operating a storage cell arrangement |
| 05/19/1999 | EP0916161A1 Non-volatile storage cell |
| 05/19/1999 | EP0916160A1 Silicon carbide metal-insulator semiconductor field effect transistor |
| 05/19/1999 | EP0916157A1 Thin film ferroelectric capacitors having improved memory retention through the use of essentially smooth bottom electrode structures |
| 05/19/1999 | EP0916138A1 Method of operating a storage cell arrangement |
| 05/19/1999 | EP0767899B1 Method of mounting an absolute pressure sensor |
| 05/19/1999 | EP0664896B1 A method for simulating distributed effects within a device such as a power semiconductor device |
| 05/19/1999 | CN1217059A Pressure sensor component mounted on the insertjion surface of circuit board |
| 05/19/1999 | CN1216866A Semiconductor device with no step between well regions |
| 05/19/1999 | CN1216865A Charge transferring device and charge thansferring method which can reduce floating diffusion capacitance |
| 05/19/1999 | CN1216860A CMOS semiconductor device and method of fabricating the same |
| 05/18/1999 | US5905676 Semiconductor memory apparatus |
| 05/18/1999 | US5905675 Biasing scheme for reducing stress and improving reliability in EEPROM cells |
| 05/18/1999 | US5905674 Nonvolatile memory and method of programming the same |
| 05/18/1999 | US5905548 Liquid crystal display device with large aperture ratio |
| 05/18/1999 | US5905297 Semiconductor integrated circuit using monolayer epitaxial growth |
| 05/18/1999 | US5905294 High rated voltage semiconductor device with floating diffusion regions |
| 05/18/1999 | US5905291 MISFET semiconductor integrated circuit device |
| 05/18/1999 | US5905287 Semiconductor device with high voltage protection |
| 05/18/1999 | US5905286 Semiconductor device |
| 05/18/1999 | US5905285 Ultra short trench transistors and process for making same |