Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/1999
06/15/1999US5912491 MOS device
06/15/1999US5912490 MOSFET having buried shield plate for reduced gate/drain capacitance
06/15/1999US5912489 Dual source side polysilicon select gate structure utilizing single tunnel oxide for NAND array flash memory
06/15/1999US5912488 Stacked-gate flash EEPROM memory devices having mid-channel injection characteristics for high speed programming
06/15/1999US5912486 Germanium
06/15/1999US5912483 Output circuit provided with source follower circuit having depletion type MOS transistor
06/15/1999US5912482 Solid-state image pickup device capable of reducing fixed pattern noise and preventing smear
06/15/1999US5912481 Heterojunction bipolar transistor having wide bandgap, low interdiffusion base-emitter junction
06/15/1999US5912480 Heterojunction semiconductor device
06/15/1999US5912479 Heterojunction bipolar semiconductor device
06/15/1999US5912474 Thin film integrated circuit including at least two P-type transistors
06/15/1999US5912068 Epitaxial oxides on amorphous SiO2 on single crystal silicon
06/10/1999WO1999028977A1 SEMICONDUCTOR DEVICE BASED ON HETEROEPITAXIAL FILMS OF NITRIDE COMPOUNDS Gal-xAlxN
06/10/1999WO1999028976A1 Ldmos structure with via grounded source
06/10/1999WO1999028975A1 Field effect transistor
06/10/1999WO1999028974A1 Pn-transition with increased breakdown voltage
06/10/1999WO1999028971A1 Electronic hybrid component and method for the production thereof
06/10/1999WO1999028960A1 Method and device for activating semiconductor impurities
06/10/1999WO1999028959A1 Fine protuberance structure and method of production thereof
06/10/1999WO1999028958A1 RELAXED InxGA(1-x)As GRADED BUFFERS
06/10/1999WO1999028953A2 LONG RANGE ORDERED AND EPITAXIAL OXIDES INCLUDING SiO2, ON Si, SixGe1-x, GaAs AND OTHER SEMICONDUCTORS, MATERIAL SYNTHESIS, AND APPLICATIONS THEREOF
06/10/1999WO1999028833A1 Method and system for improving a transistor model
06/10/1999WO1999010939A3 A method of manufacturing a field-effect transistor substantially consisting of organic materials
06/10/1999DE19849555A1 Flat semiconductor module with several semiconductor units in parallel
06/10/1999DE19842419A1 Peeling layer removing method in semiconductor device manufacture
06/10/1999CA2318330A1 Method and system for improving a transistor model
06/10/1999CA2311787A1 Relaxed inxga(1-x)as graded buffers
06/10/1999CA2311766A1 Long range ordered and epitaxial oxides including sio2, on si, sixge1-x, gaas and other semiconductors, material synthesis, and applications thereof
06/10/1999CA2278578A1 Method and device for activating semiconductor impurities
06/09/1999EP0921627A2 High voltage charge pump using low voltage type transistors
06/09/1999EP0921579A2 Thin film transistor based on substituted phthalocyanines
06/09/1999EP0921576A2 Thin film transistor with a LDD structure and method of producing the same
06/09/1999EP0921575A2 Semiconductor device comprising a heterostructure MIS field-effect transistor having a strained channel layer
06/09/1999EP0921574A2 Transistor
06/09/1999EP0921571A1 ESD protection device
06/09/1999EP0921570A2 ESD protection MOS transistor
06/09/1999EP0921566A1 Microelectromechanical component, such as a microsensor or a microactuator transferable onto a hybrid circuit substrate
06/09/1999EP0921560A2 Self-aligned contact
06/09/1999EP0921517A2 Signal dividing circuit and semiconductor device
06/09/1999EP0921430A1 Active matrix liquid-crystal display
06/09/1999CN2323467Y Double-pole high-speed power switch transistor transmitting zone structure
06/09/1999CN1218994A Semiconductor device
06/09/1999CN1218993A Semiconductor device and its producing method
06/08/1999US5911105 Flash memory manufacturing method
06/08/1999US5911103 Improving hot carrier resistance and suppressing generation of an interface state between a sidewall oxide film and a substrate
06/08/1999US5910925 EEPROM with split gate source side injection
06/08/1999US5910915 EEPROM with split gate source side injection
06/08/1999US5910913 Non-volatile semiconductor memory
06/08/1999US5910912 Flash EEPROM with dual-sidewall gate
06/08/1999US5910677 Semiconductor device having a protection circuit
06/08/1999US5910673 Locos MOS device for ESD protection
06/08/1999US5910672 Semiconductor device and method of manufacturing the same
06/08/1999US5910670 Semiconductor device with improved breakdown voltage characteristics
06/08/1999US5910669 Field effect Trench transistor having lightly doped epitaxial region on the surface portion thereof
06/08/1999US5910668 Semiconductor switching device
06/08/1999US5910666 High-voltage metal-oxide semiconductor (MOS) device
06/08/1999US5910665 Microelectronic structure
06/08/1999US5910664 Semiconductor device
06/08/1999US5910021 Manufacture of semiconductor device with fine pattens
06/08/1999US5910015 Thin film transistor and manufacturing method of the thin film transistor
06/03/1999WO1999027586A2 INxGa1-xP STOP-ETCH LAYER FOR SELECTIVE RECESS OF GALLIUM ARSENIDE-BASED EPTITAXIAL FIELD EFFECT TRANSISTORS AND PROCESS THEREFOR
06/03/1999WO1999027585A1 Semiconductor device
06/03/1999WO1999027584A1 Single electron devices
06/03/1999WO1999027582A2 Optimized border of semiconductor components
06/03/1999WO1999027578A1 Ion implantation process to improve the gate oxide quality at the edge of a shallow trench isolation structure
06/03/1999WO1999027576A2 Method of manufacturing a semiconductor device comprising a field effect transistor
06/03/1999WO1999012212A3 Lone-electron circuit arrangement, operating mode, and application for adding binary numbers
06/03/1999CA2311564A1 Inxga1-xp stop-etch layer for selective recess of gallium arsenide-based eptitaxial field effect transistors and process therefor
06/02/1999EP0920135A2 D/A conversion circuit and semiconductor device
06/02/1999EP0920057A2 Secure integrated chip with conductive shield
06/02/1999EP0788657B1 High resolution active matrix lcd cell design
06/02/1999DE19830805A1 Semiconductor pressure measuring sensor
06/02/1999DE19820474A1 Semiconductor component e.g. bipolar transistor
06/02/1999DE19803424C1 Semiconductor insulator structure with reduced field strength at surface, esp. for component technology silicon carbide
06/02/1999DE19750992A1 Halbleiterbauelement Semiconductor device
06/02/1999CN1218299A Semiconductor device and method of manufacturing the same
06/02/1999CN1218298A MOS transistor and thereof manufacturing method
06/02/1999CN1218297A Semiconductor device and method of fabricating the same
06/02/1999CN1218296A Dielectric separate type semiconductor device
06/02/1999CN1218294A Nonvolatile PMOS two transistor memory cell and array
06/02/1999CN1218283A Fabrication method of semiconductor device using selective epitaxial growth
06/01/1999US5909632 Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films
06/01/1999US5909628 Reducing non-uniformity in a refill layer thickness for a semiconductor device
06/01/1999US5909623 Manufacturing method of semiconductor device
06/01/1999US5909622 Asymmetrical p-channel transistor formed by nitrided oxide and large tilt angle LDD implant
06/01/1999US5909615 Method for making a vertically redundant dual thin film transistor
06/01/1999US5909406 Semiconductor memory device
06/01/1999US5909405 Nonvolatile semiconductor memory
06/01/1999US5909390 Techniques of programming and erasing an array of multi-state flash EEPROM cells including comparing the states of the cells to desired values
06/01/1999US5909389 Semiconductor memory device using ferroelectric capacitor
06/01/1999US5909139 Method and apparatus for providing gate drive voltage to switching device
06/01/1999US5909059 Semiconductor device having contact plug and method for manufacturing the same
06/01/1999US5909055 Chip package device mountable on a mother board in whichever of facedown and wire bonding manners
06/01/1999US5909052 Semiconductor device having plural chips with the sides of the chips in face-to-face contact with each other in the same crystal plane
06/01/1999US5909048 Micro-machining minute hollow using native oxide membrane
06/01/1999US5909040 Semiconductor device including quaternary buffer layer with pinholes
06/01/1999US5909039 Insulated gate bipolar transistor having a trench
06/01/1999US5909035 Thin film transistor array having a static electricity preventing circuit
06/01/1999US5908791 Method of forming a polycide gate of a semiconductor device
06/01/1999US5908321 Semiconductor structure with stable pre-reacted particle and method for making
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