| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 07/01/1999 | DE19857852A1 Semiconductor component with first conductivity semiconductor substrate |
| 07/01/1999 | DE19857610A1 Method for programming power independent memory modules with cell matrix of NAND type |
| 07/01/1999 | DE19757609A1 Soi-mosfet Soi-mosfet |
| 07/01/1999 | DE19757566A1 Semiconductor heterostructure includes a wide bandgap material for surface inversion layer suppression |
| 07/01/1999 | DE19757525A1 Non-linear electronic device |
| 07/01/1999 | DE19756873A1 Elektrische Schaltungsanordnung zur Transformation von magnetischer Feldenergie in elektrische Feldenergie An electrical circuit arrangement for the transformation of magnetic field energy into electric field energy |
| 07/01/1999 | DE19756601A1 Verfahren zum Herstellen eines Speicherzellen-Arrays A method for manufacturing a memory cell array |
| 07/01/1999 | CA2315020A1 Electrical circuit arrangement for transforming of magnetic field energy into electric field energy |
| 06/30/1999 | EP0926831A2 Pass transistor circuit |
| 06/30/1999 | EP0926741A2 Gate structure and method of forming same |
| 06/30/1999 | EP0926740A2 A transient voltage suppressor |
| 06/30/1999 | EP0926739A1 A structure of and method for forming a mis field effect transistor |
| 06/30/1999 | EP0926737A2 A screened EEPROM cell |
| 06/30/1999 | EP0926727A1 Process for manufacturing semiconductor device with migrated gate material |
| 06/30/1999 | EP0926711A2 Gate electrode fabrication method |
| 06/30/1999 | EP0926710A2 Method of manufacturing a gate electrode |
| 06/30/1999 | EP0926506A2 Integrated circuit with latch up prevention during burn in testing |
| 06/30/1999 | EP0926260A2 Using antibody - antigen interaction for formation of a patterened metal film |
| 06/30/1999 | EP0925610A1 Semiconductor component with a control electrode for modulating the conductivity of a channel area by means of a magnetoresistor structure |
| 06/30/1999 | EP0925178A1 Memory device using movement of protons |
| 06/30/1999 | EP0787355B1 Process for producing a read-only storage cell arrangement with vertical mos transistors |
| 06/30/1999 | CN2327072Y L wave-band silicon pulse powder transistor |
| 06/30/1999 | CN2327071Y C wave-band silicon power transistor |
| 06/30/1999 | CN1221223A Semiconductor device and manufacturing method for the same |
| 06/30/1999 | CN1221222A EEPROM device and manufacture method thereof |
| 06/30/1999 | CN1221213A Semiconductor integrated circuit and method for manufacturing the same and semiconductor device and method for manufacturing the same |
| 06/30/1999 | CN1221205A Semiconductor substrate and thin-film semiconductive member, and method for making thereof |
| 06/30/1999 | CN1221124A Semiconductor display device, correcting system and correcting method of semiconductor display device |
| 06/29/1999 | US5918142 Method for fabricating a semiconductor device |
| 06/29/1999 | US5918137 MOS transistor with shield coplanar with gate electrode |
| 06/29/1999 | US5918135 Methods for forming integrated circuit capacitors including dual electrode depositions |
| 06/29/1999 | US5918134 Method of reducing transistor channel length with oxidation inhibiting spacers |
| 06/29/1999 | US5918133 Semiconductor device having dual gate dielectric thickness along the channel and fabrication thereof |
| 06/29/1999 | US5918132 Method for narrow space formation and self-aligned channel implant |
| 06/29/1999 | US5918130 Transistor fabrication employing formation of silicide across source and drain regions prior to formation of the gate conductor |
| 06/29/1999 | US5918129 For doping an integrated circuit device channel in a semiconductor substrate |
| 06/29/1999 | US5918128 Reduced channel length for a high performance CMOS transistor |
| 06/29/1999 | US5918125 Process for manufacturing a dual floating gate oxide flash memory cell |
| 06/29/1999 | US5918121 Method of reducing substrate losses in inductor |
| 06/29/1999 | US5918116 Process for forming gate oxides possessing different thicknesses on a semiconductor substrate |
| 06/29/1999 | US5918114 Method of forming vertical trench-gate semiconductor devices having self-aligned source and body regions |
| 06/29/1999 | US5918110 Method for manufacturing a combination of a pressure sensor and an electrochemical sensor |
| 06/29/1999 | US5918036 Computer implemented simulation method |
| 06/29/1999 | US5917846 Optical Semiconductor device with carrier recombination layer |
| 06/29/1999 | US5917756 Nonvolatile semiconductor memory cell capable of saving overwritten cell and its saving method |
| 06/29/1999 | US5917751 Nonvolatile semiconductor memory device |
| 06/29/1999 | US5917354 Circuit for resetting output of positive/negative high voltage generating circuit to VCC/VSS |
| 06/29/1999 | US5917245 Semiconductor device with brazing mount |
| 06/29/1999 | US5917243 Semiconductor device having ohmic electrode and method of manufacturing the same |
| 06/29/1999 | US5917241 High frequency semiconductor device having source, drain, and gate leads |
| 06/29/1999 | US5917228 Trench-type schottky-barrier diode |
| 06/29/1999 | US5917225 Insulated gate field effect transistor having specific dielectric structures |
| 06/29/1999 | US5917223 Semiconductor device having salicide layer |
| 06/29/1999 | US5917222 Intergrated circuit combining high frequency bipolar and high power CMOS transistors |
| 06/29/1999 | US5917221 Semiconductor device and method for forming the same |
| 06/29/1999 | US5917219 Semiconductor devices with pocket implant and counter doping |
| 06/29/1999 | US5917218 Peripheral circuits including high voltage transistors with LDD structures for nonvolatile memories |
| 06/29/1999 | US5917217 Lateral field effect transistor and method of manufacturing the same |
| 06/29/1999 | US5917216 Trenched field effect transistor with PN depletion barrier |
| 06/29/1999 | US5917215 Stepped edge structure of an EEPROM tunneling window |
| 06/29/1999 | US5917214 Split gate flash memory unit |
| 06/29/1999 | US5917210 Flat panel imaging device |
| 06/29/1999 | US5917209 Semiconductor device including via hole and isolating circumferential member |
| 06/29/1999 | US5917208 For transferring electric charges |
| 06/29/1999 | US5917204 Insulated gate bipolar transistor with reduced electric fields |
| 06/29/1999 | US5917203 Lateral gate vertical drift region transistor |
| 06/29/1999 | US5917199 Solid state imager including TFTS with variably doped contact layer system for reducing TFT leakage current and increasing mobility and method of making same |
| 06/29/1999 | US5917198 Gate electrodes and matrix lines made of W/Ta alloy for LCD apparatus |
| 06/29/1999 | US5917195 Phonon resonator and method for its production |
| 06/29/1999 | US5917194 Mesoscopic electronic devices with tailored energy loss scattering |
| 06/29/1999 | US5916821 Method for producing sublithographic etching masks |
| 06/24/1999 | WO1999031734A1 High-threshold soi thin film transistor |
| 06/24/1999 | WO1999031733A1 Silicon oxynitride spacer for preventing over-etching during local interconnect formation |
| 06/24/1999 | WO1999031732A2 Semiconductor processing method and field effect transistor |
| 06/24/1999 | WO1999031731A2 Silicon oxide insulator (soi) semiconductor having selectively linked body |
| 06/24/1999 | WO1999031730A1 Formation of control and floating gates of semiconductor non-volatile memories |
| 06/24/1999 | WO1999031729A1 Reduced capacitance transistor with electro-static discharge protection structure and method for forming the same |
| 06/24/1999 | WO1999031728A1 A method and system for providing a tapered shallow trench isolation structure profile |
| 06/24/1999 | WO1999031721A1 High k gate electrode |
| 06/24/1999 | WO1999031720A2 Thin film transistors and electronic devices comprising such |
| 06/24/1999 | WO1999031719A1 Semiconductor thin film, method of producing the same, apparatus for producing the same, semiconductor device and method of producing the same |
| 06/24/1999 | WO1999031670A2 A symmetric segmented memory array architecture |
| 06/24/1999 | WO1999031669A1 Biasing method and structure for reducing band-to-band and/or avalanche currents during the erase of flash memory devices |
| 06/24/1999 | WO1999013514A3 Electrical devices and a method of manufacturing the same |
| 06/24/1999 | DE19859627A1 Semiconducting device, especially sensor forming part of integrated circuit |
| 06/24/1999 | DE19857059A1 Silicon on insulator component |
| 06/24/1999 | DE19821640A1 Power semiconductor component with semiconductor layer |
| 06/24/1999 | DE19819590C1 Power MOSFET for high conductivity transistor switch |
| 06/24/1999 | DE19818298C1 Super low-ohmic vertical MOSFET |
| 06/24/1999 | DE19808348C1 Semiconductor component, such as field-effect power semiconductor device |
| 06/24/1999 | DE19758339A1 Vertical bipolar transistor suitable for integration |
| 06/24/1999 | DE19754784A1 Elektrooptische Anzeige Electro-optical display |
| 06/23/1999 | EP0924773A1 Semiconductor device including a SOI MOSFET having source and drain electrodes comprising a metal silicide layer and method of making the same |
| 06/23/1999 | EP0924769A1 Method of transferring thin film devices, thin film device, thin film integrated circuit device, active matrix substrate, liquid crystal display, and electronic apparatus |
| 06/23/1999 | EP0924768A2 Nonvolatile semiconductor memory device and method for driving the same |
| 06/23/1999 | EP0924767A1 EEPROM device and method for manufacturing thereof |
| 06/23/1999 | EP0924751A2 Well diffusion |
| 06/23/1999 | EP0923792A2 Silicon germanium semiconductor device and a method of manufacturing the same |
| 06/23/1999 | EP0719455B1 Single-pole transistor with integrated reset structure |
| 06/23/1999 | CN1220778A Conductors for integrated circuits |