Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/1999
07/13/1999US5923978 Nonvolatile semiconductor memory and methods for manufacturing and using the same
07/13/1999US5923976 Nonvolatile memory cell and method of fabricating the same
07/13/1999US5923969 Method for manufacturing a semiconductor device having a limited pocket region
07/13/1999US5923968 Method for producing semiconductor device
07/13/1999US5923967 Method for producing a thin film semiconductor device
07/13/1999US5923965 Thin film transistors and method of making
07/13/1999US5923964 Hydrogenation; coating with silicon nitride, then silicon dioxide
07/13/1999US5923963 Method of manufacturing a semiconductor display device
07/13/1999US5923962 Method for manufacturing a semiconductor device
07/13/1999US5923961 Method of making an active matrix type display
07/13/1999US5923952 Method of making a semiconductor device
07/13/1999US5923949 Semiconductor device having fluorine bearing sidewall spacers and method of manufacture thereof
07/13/1999US5923589 Non-volatile semiconductor memory device having long-life memory cells and data erasing method
07/13/1999US5923588 Non-volatile semiconductor memory device with a plurality of programming voltage levels
07/13/1999US5923587 Multi-bit memory cell array of a non-volatile semiconductor memory device and method for driving the same
07/13/1999US5923079 Single-chip system having electrostatic discharge (ESD) protective circuitry including a single bipolar transistor portion
07/13/1999US5923073 Method of manufacturing a semiconductor device and semiconductor device manufactured according to the method
07/13/1999US5923072 Semiconductor device with metallic protective film
07/13/1999US5923071 Semiconductor device having a semiconductor film of low oxygen concentration
07/13/1999US5923070 Semiconductor device having an element inclusion region for reducing stress caused by lattice mismatch
07/13/1999US5923068 Electrostatic discharge protection device
07/13/1999US5923066 Field-effect-controllable semiconductor component
07/13/1999US5923065 Power MOSFET device manufactured with simplified fabrication processes to achieve improved ruggedness and product cost savings
07/13/1999US5923063 Double density V nonvolatile memory cell
07/13/1999US5923062 Semiconductor device incorporating capacitors
07/13/1999US5923061 CCD charge splitter
07/13/1999US5923058 Aluminum gallium nitride heterojunction bipolar transistor
07/13/1999US5923057 Bipolar semiconductor device and method for fabricating the same
07/13/1999US5923056 Flash memory device
07/13/1999US5923055 Controllable semiconductor component
07/13/1999US5923053 Light-emitting diode having a curved side surface for coupling out light
07/13/1999US5923051 Field controlled semiconductor device of SiC and a method for production thereof
07/13/1999US5923050 Amorphous silicon TFT
07/13/1999US5923046 Quantum dot memory cell
07/13/1999US5922623 Etching silicon oxide film abutting refractory metal silicide electrodes
07/13/1999US5922621 Quantum semiconductor device and a fabrication process thereof
07/13/1999US5922125 Semiconductor device and method of manufacturing the same
07/08/1999WO1999034484A2 Microelectromechanically, tunable, confocal, vcsel and fabry-perot filter
07/08/1999WO1999034449A2 A high voltage thin film transistor with improved on-state characteristics and method for making same
07/08/1999WO1999034448A1 Soi mosfet
07/08/1999WO1999034447A1 Single electron component
07/08/1999WO1999034446A1 Soi combination body tie
07/08/1999WO1999034436A1 Semiconductor device
07/08/1999WO1999034431A1 Method of producing silicon oxide film, method of manufacturing semiconductor device, semiconductor device, display, and infrared irradiating device
07/08/1999WO1999022409A3 Semiconductor device comprising a half-bridge circuit
07/08/1999WO1999019734A3 Multi-element micro gyro
07/08/1999WO1999008325A8 Electrode means, with or without functional elements and an electrode device formed of said means
07/08/1999DE19900171A1 Silicon carbide semiconductor structure especially a vertical power MOSFET has stable FET characteristics and high gate insulation reliability
07/08/1999DE19900169A1 Vertical silicon carbide JFET or MOSFET with precisely controlled or adjusted channel dimensions
07/08/1999DE19859090A1 Gate oxide films of different thicknesses are formed on active regions especially of a MOS device substrate
07/08/1999DE19838150A1 Semiconductor module with series of standard cells
07/08/1999DE19833955A1 Integrated semiconductor circuit, e.g. a DRAM, exhibits reduced leakage current
07/08/1999DE19812643C1 MOS-transistor based circuit structure integrated into semiconductor substrate, preferably mono-crystalline silicon wafer
07/08/1999DE19737047A1 Magnetic field transistor
07/08/1999CA2316858A1 Microelectromechanically, tunable, confocal, vertical cavity surface emitting laser and fabry-perot filter
07/07/1999WO1999035678A1 Semiconductor device, substrate for electro-optical device, electro-optical device, electronic device, and projection display
07/07/1999EP0928030A1 High voltage field-effect transistor and corresponding manufacturing method
07/07/1999EP0928021A1 Process for manufacturing semiconductor device
07/07/1999EP0928015A2 Method of preventing boron penetration
07/07/1999EP0927432A1 Bipolar transistor which can be controlled by field effect and method for producing the same
07/07/1999EP0578821B1 Semiconductor device
07/07/1999CN2327581Y Energy recovering device of railway vehicles
07/07/1999CN1222254A Memory cell design with vertically stacked crossovers
07/07/1999CN1221810A Method for cleaning substrate and cleaning solution
07/07/1999CN1044046C Electrically erasable phase change memory
07/06/1999US5920794 Electromigration resistant metallization process microcircuit interconnections with RF-reactively sputtered titanium tungsten and gold
07/06/1999US5920784 Method for manufacturing a buried transistor
07/06/1999US5920782 Method for improving hot carrier degradation
07/06/1999US5920781 Method of making semiconductor device
07/06/1999US5920776 Method of making asymmetric nonvolatile memory cell
07/06/1999US5920772 Method of fabricating a hybrid polysilicon/amorphous silicon TFT
07/06/1999US5920453 Completely encapsulated top electrode of a ferroelectric capacitor
07/06/1999US5920346 Two-dimensional CCD image sensor free from vertical black streaks
07/06/1999US5920231 Negative differential resistance amplifier
07/06/1999US5920111 CMOS OP-AMP circuit using BJT as input stage
07/06/1999US5920108 Late process method and apparatus for trench isolation
07/06/1999US5920106 Semiconductor device and method for producing the same
07/06/1999US5920105 Compound semiconductor field effect transistor having an amorphous gas gate insulation layer
07/06/1999US5920104 Reducing reverse short-channel effect with light dose of P with high dose of as in n-channel LDD
07/06/1999US5920103 Asymmetrical transistor having a gate dielectric which is substantially resistant to hot carrier injection
07/06/1999US5920095 Short channel field effect semiconductor device and method of making
07/06/1999US5920094 Semiconductor device on SOI substrate
07/06/1999US5920093 SOI FET having gate sub-regions conforming to t-shape
07/06/1999US5920090 Switched magnetic field sensitive field effect transistor device
07/06/1999US5920088 Vertical MISFET devices
07/06/1999US5920087 Lateral IGBT
07/06/1999US5920085 Multiple floating gate field effect transistors and methods of operating same
07/06/1999US5920084 LCD with increased pixel opening sizes
07/06/1999US5920083 Thin-film transistor display devices having coplanar gate and drain lines
07/06/1999US5920082 Liquid crystal display device having a TFT switch composed of a separate transparent layer for connecting the pixel and drain electrodes
07/06/1999US5919515 Ferroelectric thin film, electric device and method for preparing ferroelectric thin film
07/01/1999WO1999033160A1 Electrical circuit arrangement for transforming magnetic field energy into electric field energy
07/01/1999WO1999033120A1 Multilevel memory device with coulomb barrier, method for making same and reading/writing/erasing method of such a device
07/01/1999WO1999033119A2 Power semiconductor devices
07/01/1999WO1999033118A1 Improved static induction transistor
07/01/1999WO1999033115A1 Silicon-on-insulator configuration which is compatible with bulk cmos architecture
07/01/1999WO1999033105A1 Process for producing a memory cell array
07/01/1999WO1999033099A1 Method for forming a uniform network of semiconductor islands on an insulating substrate
07/01/1999WO1999032691A1 Insulating material, substrate covered with an insulating film, method of producing the same, and thin-film device
07/01/1999WO1999021022A3 Method for detecting a current of spin polarized electrons in a solid body