| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 07/22/1999 | WO1999036964A1 Source-down fet |
| 07/22/1999 | WO1999036963A1 Vertical igbt with an soi structure |
| 07/22/1999 | WO1999036961A1 Power mosfet |
| 07/22/1999 | WO1999036941A2 Trench isolation for micromechanical devices |
| 07/22/1999 | WO1998057378A9 Latch-up free power mos-bipolar transistor |
| 07/22/1999 | DE19840402A1 DMOS power element structure production |
| 07/22/1999 | DE19818300C1 Lateral high voltage sidewall transistor |
| 07/22/1999 | DE19801313A1 Source-down FET with buried gate |
| 07/22/1999 | DE19801093A1 SOI insulated-gate bipolar transistor for integration in CMOS circuit |
| 07/21/1999 | EP0930711A1 Bidirectional thyristor |
| 07/21/1999 | EP0930656A2 Flash memory region and method of fabrication thereof |
| 07/21/1999 | EP0930623A1 Polymer composite materials for electrostatic discharge protection |
| 07/21/1999 | EP0929910A1 Vertical power mosfet |
| 07/21/1999 | EP0497980B1 Optical valve device |
| 07/21/1999 | CN1223475A Giant magnetic resistance P-N junction structure |
| 07/21/1999 | CN1223472A High yield semiconductor device and method of fabricating the same |
| 07/21/1999 | CN1223465A Semiconductor device and method for manufacturing the same |
| 07/21/1999 | CN1223460A Semiconductor material |
| 07/21/1999 | CN1223459A 半导体器件 Semiconductor devices |
| 07/20/1999 | US5926741 Reoxidation after oxynitridation, reduces scattering of film thickness and prevents any lowering of the dielectric breakdown withstand voltage |
| 07/20/1999 | US5926740 Graded anti-reflective coating for IC lithography |
| 07/20/1999 | US5926730 Conductor layer nitridation |
| 07/20/1999 | US5926725 Method of manufacturing semiconductor devices with a reverse tapered sectional configuration |
| 07/20/1999 | US5926714 Method for fabricating a transistor |
| 07/20/1999 | US5926712 Process for fabricating MOS device having short channel |
| 07/20/1999 | US5926711 Method of forming an electrode of a semiconductor device |
| 07/20/1999 | US5926705 Method for manufacturing a semiconductor device with stabilization of a bipolar transistor and a schottky barrier diode |
| 07/20/1999 | US5926703 LDD device having a high concentration region under the channel |
| 07/20/1999 | US5926702 Method of fabricating TFT array substrate |
| 07/20/1999 | US5926699 Method of fabricating semiconductor device having stacked layer substrate |
| 07/20/1999 | US5926698 Semiconductor memory device and method of fabricating the same |
| 07/20/1999 | US5926418 Method for programming a memory cell |
| 07/20/1999 | US5926402 Simulation method with respect to trace object that event occurs in proportion to probability and computer program product for causing computer system to perform the simulation |
| 07/20/1999 | US5926372 For use with a high power switching module |
| 07/20/1999 | US5926234 Liquid crystal display device |
| 07/20/1999 | US5925923 Merged single polysilicon bipolar NPN transistor |
| 07/20/1999 | US5925918 Gate stack with improved sidewall integrity |
| 07/20/1999 | US5925914 Asymmetric S/D structure to improve transistor performance by reducing Miller capacitance |
| 07/20/1999 | US5925912 Semiconductor apparatus having a conductive sidewall structure |
| 07/20/1999 | US5925911 Semiconductor device in which defects due to LOCOS or heat treatment are suppressed |
| 07/20/1999 | US5925910 DMOS transistors with schottky diode body structure |
| 07/20/1999 | US5925909 Three-dimensional complementary field effect transistor process and structures |
| 07/20/1999 | US5925908 Integrated circuit including a non-volatile memory device and a semiconductor device |
| 07/20/1999 | US5925907 Semiconductor device including transistor with composite gate structure and transistor with single gate structure |
| 07/20/1999 | US5925906 Floating gate type non-volatile semiconductor memory device having separate tunnel and channel regions controlled by a single gate structure |
| 07/20/1999 | US5925904 Two-terminal electrically-reprogrammable programmable logic element |
| 07/20/1999 | US5925903 Field-effect transistors and method of manufacturing the same |
| 07/20/1999 | US5925902 Semiconductor device having a schottky film with a vertical gap formed therein |
| 07/20/1999 | US5925900 Emitter-switched thyristor having a floating ohmic contact |
| 07/20/1999 | US5925899 Vertical type insulated gate bipolar transistor having a planar gate structure |
| 07/20/1999 | US5925895 Silica |
| 07/20/1999 | US5925894 Thin film transistor with asymmetrically arranged gate electrode and offset region |
| 07/20/1999 | US5925465 Graphite-based carbon material obtained by bending at least one carbon atom layer of graphite in a selected region along lines; the bending can be accomplished with a probes of an atomic force microscope; nanostructure for microelectronics |
| 07/15/1999 | WO1999035695A1 Silicon on insulator high-voltage switch |
| 07/15/1999 | WO1999035692A1 Subscriber interface protection circuit |
| 07/15/1999 | WO1999035687A1 Low-inductance, gate-controlled thyristor |
| 07/15/1999 | WO1999035685A1 Integrated cmos transistor formation |
| 07/15/1999 | WO1999035680A1 Low energy boron implantation for p+ poly gate |
| 07/15/1999 | WO1999035679A1 Method for making asymmetrical gate oxide thicknesses |
| 07/15/1999 | WO1999035477A1 Micromechanical component |
| 07/15/1999 | WO1999027582A3 Optimized border of semiconductor components |
| 07/15/1999 | WO1999026293A3 Semiconductor component and manufacturing method for semiconductor component |
| 07/15/1999 | DE19900313A1 Semiconductor device, e.g. insulated gate bipolar transistor device |
| 07/15/1999 | DE19860505A1 Electrostatic discharge protection circuit |
| 07/15/1999 | DE19832271A1 Semiconductor device, especially MOS transistor for DRAM |
| 07/15/1999 | DE19821191A1 Semiconductor device plug, especially polysilicon via plug e.g. of bit line via or node via for capacitor |
| 07/15/1999 | DE19801095A1 Power MOSFET, especially source-down power MOSFET used in automobile |
| 07/15/1999 | DE19800574A1 Mikromechanisches Bauelement Micromechanical component |
| 07/15/1999 | DE19800469A1 Niederinduktiv angesteuerter, gategesteuerter Thyristor Low inductance is overdriven, gate-controlled thyristor |
| 07/14/1999 | EP0929105A2 Metal gate sub-micron mos transistor and method of making same |
| 07/14/1999 | EP0929096A2 Metal patterning by formation of etchable plural metal compositions |
| 07/14/1999 | EP0928497A1 A novel process for reliable ultra-thin oxynitride formation |
| 07/14/1999 | EP0928485A1 Two-transistor flash eprom cell |
| 07/14/1999 | EP0928456A1 System and method for predicting the behavior of a component |
| 07/14/1999 | EP0838084A4 Multilayer high vertical aspect ratio thin film structures |
| 07/14/1999 | EP0804807B1 Flat panel imaging device |
| 07/14/1999 | EP0760966B1 Large aperture ratio array architecture for active matrix liquid crystal displays |
| 07/14/1999 | EP0728359A4 Flash eprom integrated circuit architecture |
| 07/14/1999 | EP0647971B1 Thin film transistor and display using the transistor |
| 07/14/1999 | CN1223015A Display |
| 07/14/1999 | CN1223014A Substrate with conductor formed of low-resistance aluminum alloy |
| 07/14/1999 | CN1222789A Solid-state relay |
| 07/14/1999 | CN1222768A 半导体器件 Semiconductor devices |
| 07/14/1999 | CN1222766A Semiconductor device and method of manufacturing the same |
| 07/14/1999 | CN1222763A Semiconductor device equipped with antifuse elements and method for manufacturing FPGA |
| 07/14/1999 | CN1222761A Moldless semiconductor device and photovoltaic device module making use of same |
| 07/14/1999 | CN1222759A Method of manufacturing semiconductor device |
| 07/14/1999 | CN1222752A Semiconductor device and method for its preparation |
| 07/14/1999 | CN1044172C Mos composite static induction thyristor |
| 07/13/1999 | US5924009 Using titanium tetrachloride |
| 07/13/1999 | US5924002 Method of manufacturing a semiconductor device having ohmic electrode |
| 07/13/1999 | US5923999 Method of controlling dopant diffusion and metal contamination in thin polycide gate conductor of mosfet device |
| 07/13/1999 | US5923997 Doping an amorphous silicon film; crystallizing by heating |
| 07/13/1999 | US5923987 Method for forming MOS devices with retrograde pocket regions and counter dopant regions at the substrate surface |
| 07/13/1999 | US5923985 MOS field effect transistor and its manufacturing method |
| 07/13/1999 | US5923983 Integrated circuit gate conductor having a gate dielectric which is substantially resistant to hot carrier effects |
| 07/13/1999 | US5923982 Method of making asymmetrical transistor with lightly and heavily doped drain regions and ultra-heavily doped source region using two source/drain implant steps |
| 07/13/1999 | US5923981 Cascading transistor gate and method for fabricating the same |
| 07/13/1999 | US5923980 Trench transistor with localized source/drain regions implanted through voids in trench |
| 07/13/1999 | US5923979 Planar DMOS transistor fabricated by a three mask process |