| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 07/29/1999 | WO1999038214A1 Insulating gate type bipolar semiconductor device |
| 07/29/1999 | WO1999038213A1 Memory device and method of manufacturing the same, and integrated circuit and method of manufacturing semiconductor device |
| 07/29/1999 | WO1999038205A1 Method for producing diodes |
| 07/29/1999 | WO1999038016A1 An arrangement for measuring angular velocity |
| 07/29/1999 | WO1999031732A3 Semiconductor processing method and field effect transistor |
| 07/29/1999 | WO1999026296A3 A SEMICONDUCTOR DEVICE OF SiC AND A TRANSISTOR OF SiC HAVING AN INSULATED GATE |
| 07/29/1999 | WO1999026292A3 Semiconductor device of sic with insulating layer and a refractory metal nitride layer |
| 07/29/1999 | WO1999025003A3 Manufacture of a semiconductor device with a poly-emitter bipolar transistor |
| 07/29/1999 | DE19903028A1 MOS semiconductor structure used as a MOSFET or IGBT structure |
| 07/29/1999 | DE19836979A1 Isolated gate bipolar transistor with isolated gate |
| 07/29/1999 | DE19828191C1 Lateral high voltage transistor |
| 07/28/1999 | EP0932206A2 High electron mobility transistor |
| 07/28/1999 | EP0932205A1 PN junction semiconductor device having an epitaxial layer with graded resistivity |
| 07/28/1999 | EP0932203A1 Method and circiut for improving the performances of an ESD protection on semiconductor circuit structures |
| 07/28/1999 | EP0932197A1 Method of varying MOS transistor electrical characteristics of integrated circuits |
| 07/28/1999 | EP0932186A2 Improved polycide |
| 07/28/1999 | EP0932161A1 Method for controlled erasing memory devices, in particular analog and multi-level flash-EEPROM devices |
| 07/28/1999 | EP0931379A1 Triple well charge pump |
| 07/28/1999 | EP0931355A1 Semiconductor device with a protected barrier for a stack cell |
| 07/28/1999 | EP0931354A1 Power mos component |
| 07/28/1999 | EP0931353A1 Threshold adjust in vertical dmos transistor |
| 07/28/1999 | EP0931352A1 Gate-controlled thyristor |
| 07/28/1999 | EP0931351A1 Thyristor with breakdown region |
| 07/28/1999 | EP0931350A1 Short channel self aligned vmos field effect transistor |
| 07/28/1999 | EP0931348A1 Process for producing barrier-free semiconductor storage assemblies |
| 07/28/1999 | EP0931342A1 Process for producing barrier-free semiconductor storage assemblies |
| 07/28/1999 | EP0931338A1 Method of producing a mos transistor |
| 07/28/1999 | EP0931336A1 A method for producing a silicon carbide bipolar device and a silicon carbide bipolar device |
| 07/28/1999 | EP0931333A1 PROCESS FOR THE MANUFACTURE OF A HIGHLY $g(e) DIELECTRIC OR FERROELECTRIC COATING |
| 07/28/1999 | EP0931248A1 Temperature sensing circuits |
| 07/28/1999 | EP0931187A1 A METHOD FOR PRODUCING A REGION DOPED WITH BORON IN A SiC-LAYER |
| 07/28/1999 | EP0852617A4 Apparatus and methods for active programmable matrix devices |
| 07/28/1999 | EP0834190A4 Method for shallow junction formation |
| 07/28/1999 | CN2331085Y Internal-pressed connection type power semiconductor device |
| 07/28/1999 | CN2331082Y Microwave transistor metallized wiring strengthening structure |
| 07/27/1999 | US5930676 Multilayered interconnection substrate and process for fabricating the same |
| 07/27/1999 | US5930660 Method for fabricating diode with improved reverse energy characteristics |
| 07/27/1999 | US5930658 Covering defects in gate region of semiconductor substrate with conformal layer of silicon oxide-free oxygen-doped silicon, final oxidation forms quality uniform silicon oxide coating |
| 07/27/1999 | US5930657 Method of depositing an amorphous silicon film by APCVD |
| 07/27/1999 | US5930653 Method of manufacturing a semiconductor device for surface mounting suitable for comparatively high voltages, and such a semiconductor device |
| 07/27/1999 | US5930651 Method of forming a semiconductor device having a plurality of cavity defined gating regions |
| 07/27/1999 | US5930642 Transistor with buried insulative layer beneath the channel region |
| 07/27/1999 | US5930638 Method of making a low parasitic resistor on ultrathin silicon on insulator |
| 07/27/1999 | US5930636 Method of fabricating high-frequency GaAs substrate-based Schottky barrier diodes |
| 07/27/1999 | US5930634 Method of making an IGFET with a multilevel gate |
| 07/27/1999 | US5930632 Forming thin film of cobalt niobate dielectric and electroconductive cobalt silicide electrode layer for high speed transistor performance |
| 07/27/1999 | US5930631 Method of making double-poly MONOS flash EEPROM cell |
| 07/27/1999 | US5930630 Method for device ruggedness improvement and on-resistance reduction for power MOSFET achieved by novel source contact structure |
| 07/27/1999 | US5930629 Semiconductor memory device and method of manufacturing the same |
| 07/27/1999 | US5930620 Semiconductor process |
| 07/27/1999 | US5930619 Method of making trench EPROM simultaneously with forming a DRAM cell |
| 07/27/1999 | US5930614 Method for forming MOS device having field shield isolation |
| 07/27/1999 | US5930612 Method of manufacturing complementary MOS semiconductor device |
| 07/27/1999 | US5930611 Using hydrogen fluoride/ammonium fluoride mixture to selectively etch a silicon oxide, oxynitride, or nitride interlayer dielectric formed on gallium sulfide film without degrading gallium sulfide |
| 07/27/1999 | US5930609 Electronic device manufacture |
| 07/27/1999 | US5930608 Method of fabricating a thin film transistor in which the channel region of the transistor consists of two portions of differing crystallinity |
| 07/27/1999 | US5930605 Method for forming a semiconductor structure |
| 07/27/1999 | US5930592 Asymmetrical n-channel transistor having LDD implant only in the drain region |
| 07/27/1999 | US5930498 Apparatus for stably producing discreted grid points |
| 07/27/1999 | US5930169 Nonvolatile semiconductor memory device capable of improving of chip's lifetime and method of operating the same |
| 07/27/1999 | US5930163 Semiconductor memory device having two P-well layout structure |
| 07/27/1999 | US5930133 Rectifying device for achieving a high power efficiency |
| 07/27/1999 | US5929947 Liquid crystal display thin film transistor array with redundant film formed over a contact hole and method of fabricating the same |
| 07/27/1999 | US5929690 Three-terminal power MOSFET switch for use as synchronous rectifier or voltage clamp |
| 07/27/1999 | US5929665 Power converter with voltage drive switching device monitored by device parameters and electric parameters |
| 07/27/1999 | US5929636 All-metal giant magnetoresistive solid-state component |
| 07/27/1999 | US5929527 Aluminum, silicon nitride |
| 07/27/1999 | US5929523 Os rectifying Schottky and ohmic junction and W/WC/TiC ohmic contacts on SiC |
| 07/27/1999 | US5929507 Gettering regions and methods of forming gettering regions within a semiconductor wafer |
| 07/27/1999 | US5929503 Electronic circuit |
| 07/27/1999 | US5929502 Level shifter stage with punch through diode |
| 07/27/1999 | US5929499 Photodiode array |
| 07/27/1999 | US5929498 Semiconductor device |
| 07/27/1999 | US5929496 Method and structure for channel length reduction in insulated gate field effect transistors |
| 07/27/1999 | US5929495 Semiconductor processing method of forming a static random access memory cell and static random access memory cell |
| 07/27/1999 | US5929490 In a field effect transistor |
| 07/27/1999 | US5929488 Metal-oxide semiconductor device |
| 07/27/1999 | US5929487 Aluminum nitride film |
| 07/27/1999 | US5929485 High voltage insulated gate type bipolar transistor for self-isolated smart power IC |
| 07/27/1999 | US5929484 High voltage semiconductor device |
| 07/27/1999 | US5929483 Semiconductor device having spacer and method of making same |
| 07/27/1999 | US5929482 Power semiconductor device and method for manufacturing the same |
| 07/27/1999 | US5929481 High density trench DMOS transistor with trench bottom implant |
| 07/27/1999 | US5929480 Nonvolatile semiconductor memory device having first and second floating gates |
| 07/27/1999 | US5929479 Floating gate type non-volatile semiconductor memory for storing multi-value information |
| 07/27/1999 | US5929477 Self-aligned diffused source vertical transistors with stack capacitors in a 4F-square memory cell array |
| 07/27/1999 | US5929476 Semiconductor-on-insulator transistor and memory circuitry employing semiconductor-on-insulator transistors |
| 07/27/1999 | US5929473 MMIC semiconductor device with WNx capacitor electrode |
| 07/27/1999 | US5929472 Semiconductor floating gate sensor device |
| 07/27/1999 | US5929467 Field effect transistor with nitride compound |
| 07/27/1999 | US5929466 Algainn-based material, improvement of a buffer layer |
| 07/27/1999 | US5929464 Active matrix electro-optical device |
| 07/27/1999 | US5929462 Semiconductor optical device having a strained quantum well structure |
| 07/27/1999 | US5929208 Combinatorial synthesis of biopolymers by contacting substrate with solution of monomer a, selectively biasing locations to specifically concentrate monomer a, removing unreacted monomer a, repeating with other monomers |
| 07/27/1999 | US5928966 Forming multilayer electrodes with patterns |
| 07/27/1999 | US5928786 Monocrystalline silicon wafer and method of thermally oxidizing a surface thereof |
| 07/27/1999 | US5927992 Method of forming a dielectric in an integrated circuit |
| 07/27/1999 | US5927143 Self-diagnostic accelerometer with symmetric proof-mass and its preparation method |
| 07/22/1999 | WO1999036966A1 Rectifying equipment |
| 07/22/1999 | WO1999036965A1 A high voltage transistor having a field oxide gate region |