Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/1999
08/10/1999US5937285 Method of fabricating submicron FETs with low temperature group III-V material
08/10/1999US5937283 Method of making a dual gate trench thin film transistor
08/10/1999US5937282 Method for producing semiconductor device
08/10/1999US5937275 Method of producing acceleration sensors
08/10/1999US5937118 Quantum synthesizer, THz electromagnetic wave generation device, optical modulation device, and electron wave modulation device
08/10/1999US5936971 Multi-state flash EEprom system with cache memory
08/10/1999US5936888 Semiconductor non-volatile memory device having floating gate type reference cell short-circuited between control gate electrode and floating gate electrode
08/10/1999US5936887 Non-volatile memory device with NAND type cell structure
08/10/1999US5936886 Semiconductor memory device having reduced variation of erasing and writing voltages supplied to each memory array
08/10/1999US5936883 Split gate type transistor memory device
08/10/1999US5936698 Manufacturing a display device using anodization
08/10/1999US5936304 C4 package die backside coating
08/10/1999US5936302 Speaker diaphragm
08/10/1999US5936291 Thin film transistor and method for fabricating the same
08/10/1999US5936290 Semiconductor device having an insulated gate field effect transistor and a well spaced from the channel region of the insulated gate field effect transistor
08/10/1999US5936289 Semiconductor device
08/10/1999US5936288 Semiconductor integrated circuit device and low breakdown voltage zener diode
08/10/1999US5936287 Nitrogenated gate structure for improved transistor performance and method for making same
08/10/1999US5936286 Differential poly-edge oxidation for stable SRAM cells
08/10/1999US5936284 Electrostatic discharge protection circuit and transistor
08/10/1999US5936283 MOSFET for input/output protective circuit having a multi-layered contact structure with multiple contact holes on a single diffusion layer
08/10/1999US5936282 Semiconductor device having input protection circuit
08/10/1999US5936278 Semiconductor on silicon (SOI) transistor with a halo implant
08/10/1999US5936277 MOS transistor with impurity-implanted region
08/10/1999US5936276 Single polysilicon level flash EEPROM cell and manufacturing process therefor
08/10/1999US5936274 High density flash memory
08/10/1999US5936267 Insulated gate thyristor
08/10/1999US5936266 Semiconductor devices and methods with tunnel contact hole sources
08/10/1999US5936265 Semiconductor device including a tunnel effect element
08/10/1999US5936262 Thin film transistors
08/10/1999US5936259 Thin film transistor and organic semiconductor material thereof
08/10/1999US5936258 Optical semiconductor memory device and read/write method therefor
08/10/1999US5936159 Semiconductor sensor having multi-layer movable beam structure film
08/10/1999US5935867 Shallow drain extension formation by angled implantation
08/05/1999WO1999039394A1 X-y addressable electric microswitch arrays and sensor matrices employing them
08/05/1999WO1999039389A2 A transistor of sic
08/05/1999WO1999039388A1 Semiconductor insulating structure with reduced surface field strength and method for the production of the said structure
08/05/1999WO1999039387A1 Transistor for analog switching functions
08/05/1999WO1999039384A1 Method of forming a semiconductor device
08/05/1999WO1999039379A1 Method of rapid thermal processing (rtp) of ion implanted silicon
08/05/1999WO1999039330A1 Interchangeable pickup, electric stringed instrument and system for an electric stringed musical instrument
08/05/1999WO1999039241A1 Liquid crystal display device
08/05/1999WO1999039170A1 Method of manufacturing a semiconductor component
08/05/1999WO1999021022A9 Method for detecting a current of spin polarized electrons in a solid body
08/05/1999WO1999019900A3 Method of forming an electronic device
08/05/1999DE19903585A1 Semiconductor sensor for medical or automotive industries, or other areas, e.g. for measuring and calibration
08/05/1999DE19836953A1 MOSFET has a constant threshold voltage along its channel
08/05/1999DE19833234A1 Semiconductor pressure sensor for detecting pressure of pressure medium
08/05/1999CA2319548A1 X-y addressable electric microswitch arrays and sensor matrices employing them
08/04/1999EP0933821A2 Low voltage one transistor flash eeprom cell using fowler-nordheim programming and erase
08/04/1999EP0933820A1 Semiconductor element and semiconductor memory device using the same
08/04/1999EP0933819A1 Method of fabricating a bidirectionally blocking power semiconductor
08/04/1999EP0933817A2 Semiconductor memory with stacked structure
08/04/1999EP0933807A2 Method for manufacturing a power semiconductor device
08/04/1999EP0933801A1 Process for depositing a monocrystalline Silicon region
08/04/1999EP0933783A2 Nonvolatile semiconductor storage device using ferroelectric films and its fabricating method.
08/04/1999CN1224932A Semiconductor memory device
08/04/1999CN1224931A Flash memory and manufacturing method therefor
08/04/1999CN1224930A Semiconductor device
08/03/1999US5933755 Method of fabricating contact sites for microelectronic devices
08/03/1999US5933745 Method of making total dielectric semiconductor device isolation region
08/03/1999US5933740 RTP booster to semiconductor device anneal
08/03/1999US5933738 Method of forming a field effect transistor
08/03/1999US5933737 Buried-channel MOS transistor and process of producing same
08/03/1999US5933736 Method of manufacturing a semiconductor device
08/03/1999US5933734 High speed MOS-technology power device integrated structure, and related manufacturing process
08/03/1999US5933733 Zero thermal budget manufacturing process for MOS-technology power devices
08/03/1999US5933732 Nonvolatile devices with P-channel EEPROM devices as injector
08/03/1999US5933731 Semiconductor device having gate oxide films having different thicknesses and manufacturing method thereof
08/03/1999US5933723 Covering densified oxide dielectric with electroconductive inner capacitor plate, coating with a nitride capacitor dielectric layer having less edge thickness depletion because oxide was densified, forming outer capacitor plate
08/03/1999US5933720 Method for manufacturing BiMOS device with improvement of high frequency characteristics of bipolar transistor
08/03/1999US5933713 Simplification, accuracy
08/03/1999US5933205 Electro-optical device and method for driving the same
08/03/1999US5933204 Display device and production method thereof with insulating members between pixel electrodes for smooth surface
08/03/1999US5933002 Controlled bending actuator system
08/03/1999US5932922 Uniform current density and high current gain bipolar transistor
08/03/1999US5932921 Semiconductor device
08/03/1999US5932920 Nonvolatile memory device and manufacturing method thereof
08/03/1999US5932919 MOSFETs with improved short channel effects
08/03/1999US5932916 Electrostatic discharge protection circuit
08/03/1999US5932913 MOS transistor with controlled shallow source/drain junction, source/drain strap portions, and source/drain electrodes on field insulation layers
08/03/1999US5932912 Semiconductor device having LDD structure with a recess in the source/drain region which is formed during the removal of a damaged layer
08/03/1999US5932911 Bar field effect transistor
08/03/1999US5932910 Flash memory cell structure having electrically isolated stacked gate
08/03/1999US5932909 Nonvolatile semiconductor memory device
08/03/1999US5932908 Trench EPROM
08/03/1999US5932904 Two transistor ferroelectric memory cell
08/03/1999US5932903 Ferroelectric semiconductor memory cell, a memory and a method for accessing the same
08/03/1999US5932899 Semiconductor having enhanced acceptor activation
08/03/1999US5932897 High-breakdown-voltage semiconductor device
08/03/1999US5932896 Nitride system semiconductor device with oxygen
08/03/1999US5932894 SiC semiconductor device comprising a pn junction
08/03/1999US5932893 Semiconductor device having doped polycrystalline layer
08/03/1999US5932892 High-voltage transistor
08/03/1999US5932890 Field effect transistor loaded with multiquantum barrier
08/03/1999US5932889 Semiconductor device with floating quantum box
08/03/1999US5932492 Methods for forming alumina masking
08/03/1999US5932484 Thin film semiconductor device for active matrix panel
08/03/1999US5932006 BaF2 /GaAs electronic components
07/1999
07/30/1999CA2260574A1 Ohmic contact and process for producing the same
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