Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/1999
08/18/1999EP0936806A2 Method of driving solid-state imaging device, solid-state imaging device and camera
08/18/1999EP0936677A1 Power semiconducteur device with an isolated gate electrode and its method of fabrication
08/18/1999EP0936676A2 MOS field effect transistors and its method of fabrication
08/18/1999EP0936675A2 C-axis oriented thin film ferroelectric transistor memory cell and method of making the same
08/18/1999EP0936674A1 A VDMOS transistor protected against overvoltages between source and gate
08/18/1999EP0936673A1 Memory cell array and corresponding manufacturing process
08/18/1999EP0936672A2 Semiconductor device and method of manufacturing the same
08/18/1999EP0936669A1 Semiconductor device and method of manufacturing the same
08/18/1999EP0936668A2 Method of producing thin film transistor
08/18/1999EP0936667A1 Lattice matched barrier for dual doped polysilicon gates
08/18/1999EP0936664A2 Partial silicidation method to form shallow source/drain junctions
08/18/1999EP0935816A2 Method of manufacturing a semiconductor device with a schottky junction
08/18/1999CN1226087A Semiconductor device and method of manufacturing the same
08/18/1999CN1226083A Semiconductor integrated circuit device
08/18/1999CN1226080A Interconnect structure in semiconductor device and method of formation
08/18/1999CN1044755C Ceramic chip-type diode and manufacturing method therefor
08/17/1999US5940736 Method for forming a high quality ultrathin gate oxide layer
08/17/1999US5940735 Phosphorus doping plasma enhanced chemical deposition (pecvd) layer covering semiconductor integrated circuit structure to reduce hydrogen content
08/17/1999US5940725 Forming silicon-rich nitride film between first and second electroconductive layers to inhibit outdiffusion of dopant from first layer into second layer and block interdiffusion between the layers
08/17/1999US5940721 Termination structure for semiconductor devices and process for manufacture thereof
08/17/1999US5940715 Method for manufacturing semiconductor device
08/17/1999US5940711 Method for making high-frequency bipolar transistor
08/17/1999US5940710 Method for fabricating metal oxide semiconductor field effect transistor
08/17/1999US5940708 Method for production of semiconductor integrated circuit device
08/17/1999US5940707 Vertically integrated advanced transistor formation
08/17/1999US5940706 Process for preventing misalignment in split-gate flash memory cell
08/17/1999US5940705 Methods of forming floating-gate FFRAM devices
08/17/1999US5940700 Method for fabricating a semiconductor diode with BCD technology
08/17/1999US5940698 Method of making a semiconductor device having high performance gate electrode structure
08/17/1999US5940696 Method of manufacturing a quantum diffraction transistor
08/17/1999US5940695 Gallium antimonide complementary HFET
08/17/1999US5940694 Field effect transistor process with semiconductor mask, single layer integrated metal, and dual etch stops
08/17/1999US5940693 Annealing to convert preheated amorphous silicon film into polycrystalline structure whereby crystal growth front is controlled by selective placement of overlying transition metal film
08/17/1999US5940692 Reducing diffusion of impurity dopants within semiconductor material beneath field effect transistor gate in the process of forming the transistor integrated circuit
08/17/1999US5940690 Production method for a thin film semiconductor device with an alignment marker made out of the same layer as the active region
08/17/1999US5940689 Method of fabricating UMOS semiconductor devices using a self-aligned, reduced mask process
08/17/1999US5940325 Low voltage one transistor flash EEPROM cell using fowler-nordheim programming and erase
08/17/1999US5940324 Single-poly EEPROM cell that is programmable and erasable in a low-voltage environment
08/17/1999US5940316 Ferroelectric memory device using a ferroelectric material and method of reading data from the ferroelectric memory device
08/17/1999US5940154 Reflection type liquid crystal display and method of fabricating the same
08/17/1999US5940069 Driving signal generator for a liquid crystal display
08/17/1999US5939941 High efficiency power amplifier using HITFET driver circuit
08/17/1999US5939770 Semiconductor device and its manufacturing method
08/17/1999US5939769 Bipolar power transistor with high collector breakdown voltage and related manufacturing process
08/17/1999US5939768 Vertical bipolar power transistor with an integrated sensing circuit
08/17/1999US5939767 Structure and process for buried diode formation in CMOS
08/17/1999US5939764 Direct current voltage transformer
08/17/1999US5939763 Ultrathin oxynitride structure and process for VLSI applications
08/17/1999US5939759 Silicon-on-insulator device with floating collector
08/17/1999US5939758 Semiconductor device with gate electrodes having conductive films
08/17/1999US5939755 Semiconductor device
08/17/1999US5939754 Power MOSFET having a drain heterojunction
08/17/1999US5939752 Low voltage MOSFET with low on-resistance and high breakdown voltage
08/17/1999US5939751 MOSFET having double junction structures in each of source and drain regions
08/17/1999US5939749 Split gate transistor array
08/17/1999US5939739 Separation of thermal and electrical paths in flip chip ballasted power heterojunction bipolar transistors
08/17/1999US5939738 Low base-resistance bipolar transistor
08/17/1999US5939737 Gate electrode of a refractory metal compound being selected from a group consisting of wn, tiw, tiwn
08/17/1999US5939736 Insulated gate thyristor
08/17/1999US5939731 MIS semiconductor device and method for fabricating the same
08/17/1999US5939632 Micromechanical accelerometer
08/17/1999US5939240 Semiconductor element structure with stepped portion for formation of element patterns
08/17/1999US5939171 Micromechanical component
08/17/1999US5938942 Active matrix type liquid crystal display.
08/17/1999CA2159642C Method for fabricating suspension members for micromachined sensors
08/12/1999WO1999040631A1 A field-effect transistor
08/12/1999WO1999040630A2 Semiconductor device with a bipolar transistor, and method of manufacturing such a device
08/12/1999WO1999040629A1 Quasi-mesh gate structure including plugs connecting source regions with backside for lateral rf mos devices
08/12/1999WO1999040625A1 Thermal bus bar design for an electronic cartridge
08/12/1999WO1999040618A1 Process of manufacturing a semiconductor device including a buried channel field effect transistor
08/12/1999WO1999040614A2 Method of manufacturing a semiconductor device with linearly doping profile
08/12/1999WO1999019734A9 Multi-element micro gyro
08/12/1999DE19833214C1 Vertical J-FET semiconductor device
08/12/1999DE19821240C1 Thyristor exhibiting reduced current filamentation on switch-off
08/11/1999EP0935389A1 A display housing
08/11/1999EP0935343A1 Sr flip flop
08/11/1999EP0935294A1 Variable capacity device with quantum-wave interference layers
08/11/1999EP0935293A2 Nonvolatile semiconductor memory device and method for fabricating the same, and semiconductor integrated circuit device
08/11/1999EP0935292A2 Method of manufacturing a MOSFET
08/11/1999EP0935291A1 Controllable solid-state device comprising a tunnel barrier structure
08/11/1999EP0935290A2 Power semiconductor device and method
08/11/1999EP0935282A2 Semiconductor device with a Silicon-rich silicide contact layer and method for manufacturing the same
08/11/1999EP0935255A2 Flash EEPROM system
08/11/1999EP0934603A1 Floating gate memory cell with charge leakage prevention
08/11/1999CN2333092Y High speed power switching transistor
08/11/1999CN1225512A Charge transfer device having three pixel rows arranged adjacently to each other
08/11/1999CN1044651C High power soft recovery tunnel diode SPBD tube core structure
08/11/1999CN1044650C High power quick soft-recovery diode SIOD tube core structure
08/10/1999US5937399 Semiconductor integrated circuit
08/10/1999US5937325 Formation of low resistivity titanium silicide gates in semiconductor integrated circuits
08/10/1999US5937318 Monocrystalline three-dimensional integrated circuit
08/10/1999US5937315 A first nickel silicide layer is formed between a gate oxide and a polycrystalline silicon gate electrode. further, second nickel silicide layers are formed over highly-doped source/drain regions.
08/10/1999US5937304 Method for fabricating semiconductor device and method for producing liquid crystal display apparatus
08/10/1999US5937303 High dielectric constant gate dielectric integrated with nitrogenated gate electrode
08/10/1999US5937301 Method of making a semiconductor device having sidewall spacers with improved profiles
08/10/1999US5937300 Semiconductor apparatus and fabrication method thereof
08/10/1999US5937299 Method for forming an IGFET with silicide source/drain contacts in close proximity to a gate with sloped sidewalls
08/10/1999US5937297 Method for making sub-quarter-micron MOSFET
08/10/1999US5937295 Nano-structure memory device
08/10/1999US5937293 Method of fabricating a source/drain with LDD and halo
1 ... 1855 1856 1857 1858 1859 1860 1861 1862 1863 1864 1865 1866 1867 1868 1869 1870 1871 1872 1873 1874 1875 ... 2182