Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/1999
08/31/1999US5945726 Lateral bipolar transistor
08/31/1999US5945725 Spherical shaped integrated circuit utilizing an inductor
08/31/1999US5945723 Composite controlled semiconductor device
08/31/1999US5945719 Substrates with silicon layer over substrates and with barrier layer of nitride, metal silicide and silicon layer
08/31/1999US5945718 Transistors and semiconductors with gallium oxide layer
08/31/1999US5945712 Semiconductor device having a SOI structure with substrate bias formed through the insulator and in contact with one of the active diffusion layers
08/31/1999US5945711 Thin film transistor
08/31/1999US5945710 Semiconductor device with doped contact impurity regions having particular doping levels
08/31/1999US5945709 Integrated circuit die having thick bus to reduce distributed resistance
08/31/1999US5945708 Field-effect-controllable, vertical semiconductor component and method for producing the same
08/31/1999US5945705 Three-dimensional non-volatile memory
08/31/1999US5945704 Semiconductor integrated circuit
08/31/1999US5945703 Semiconductor memory device and manufacturing method therefor
08/31/1999US5945701 Static induction transistor
08/31/1999US5945700 Semiconductor device having a semiconductor switch structure
08/31/1999US5945699 Reduce width, differentially doped vertical JFET device
08/31/1999US5945697 MOS transistor and charge detector using same
08/31/1999US5945695 Multilayer; indium, arsenic, gallium intermetallic channel layer
08/31/1999US5945694 Compound semiconductor device having reduced temperature variability
08/31/1999US5945693 Field-effect transistor
08/31/1999US5945692 Semiconductor device and method of fabricating same
08/31/1999US5945691 Semiconductor device for preventing destruction during a turn-off state
08/31/1999US5945687 Quantization functional device, quantization functional apparatus utilizing the same, and method for producing the same
08/31/1999US5945686 Tunneling electronic device
08/31/1999US5945256 Reducing detectable variations in brightness or electrical properties near the boundaries of exposure regions in liquid crystal displays or microelectronic devices
08/31/1999US5944193 Wafer storing system having vessel coating with ozone-proof material and method of storing semiconductor wafer
08/26/1999WO1999043031A1 Display devices
08/26/1999WO1999043030A1 Mos transistor memory cell and method for producing the same
08/26/1999WO1999043029A1 Trench-gate mos transistor, its use in an eeprom device and process for manufacturing the same
08/26/1999WO1999043028A1 Display devices
08/26/1999WO1999043024A1 Method for limiting internal diffusion in a semiconductor device with composite si/sige gate
08/26/1999WO1999043023A1 Method for nitriding the gate oxide layer of a semiconductor device and resulting device
08/26/1999WO1999042897A1 Active matrix substrate, electro-optic device, method of manufacturing active matrix substrate, and electronic device
08/26/1999WO1999042843A1 Semiconductor acceleration sensor and self-diagnosis thereof
08/26/1999WO1999042799A1 Electrically insulated strain gage
08/26/1999WO1999033119A3 Power semiconductor devices
08/26/1999WO1999031720A3 Thin film transistors and electronic devices comprising such
08/26/1999WO1999030369A3 Thin film transistors and electronic devices comprising such
08/26/1999WO1999030363A3 Semiconductor device and method of manufacturing such a device
08/26/1999WO1999030358A3 Ion implantation process
08/26/1999DE19900610A1 Power semiconductor device e.g. a transistor or diode is protected against external contamination
08/26/1999DE19844451A1 Barrier layer structure, especially for copper interconnections in a VLSI
08/26/1999DE19818296C1 High-voltage edge terminal for semiconductor component
08/26/1999DE19807434A1 Semiconductor device for wide h.f. range use, e.g. in communication equipment, radar systems, data analysis systems, frequency standards and sensors
08/26/1999CA2320857A1 Electrically insulated strain gage
08/25/1999EP0938140A2 Semiconductor device with bipolar transistor
08/25/1999EP0938138A2 Fet array for operation at different power levels
08/25/1999EP0938136A1 Semiconductor device with salicide structure and fabrication method thereof
08/25/1999EP0938074A1 Active matrix display device and method of driving the same
08/25/1999EP0937985A1 Acceleration sensor and method of producing the same
08/25/1999EP0799499B1 Semiconductor device having an insulated gate
08/25/1999EP0793801B1 Pressure sensor
08/25/1999EP0685116B1 Drift-free avalanche diode
08/25/1999EP0618535B1 EEPROM card with defective cell substitution and cache memory
08/25/1999EP0602250B1 Thin film transistor, display device, and method for manufacturing thin film transistor
08/25/1999CN1227001A Floating gate memory cell with charge leakage prevention
08/25/1999CN1226752A Field effect transistors with improved implants and method for making such transistors
08/25/1999CN1226751A Semiconductor device
08/25/1999CN1226750A Bipolar transistor and semiconductor device
08/25/1999CN1226741A Method for making field effect transistors having sub-lithographic gates with vertical side walls
08/24/1999US5943596 Fabrication of a gate electrode stack using a patterned oxide layer
08/24/1999US5943595 Method for manufacturing a semiconductor device having a triple-well structure
08/24/1999US5943592 Method of making a semiconductor device
08/24/1999US5943589 Method of fabricating semiconductor device with a trench isolation
08/24/1999US5943578 Method of manufacturing a semiconductor device having an element isolating region
08/24/1999US5943577 Method of making heterojunction bipolar structure having air and implanted isolations
08/24/1999US5943576 Angled implant to build MOS transistors in contact holes
08/24/1999US5943575 Method of forming semiconductor device
08/24/1999US5943574 Method of fabricating 3D multilayer semiconductor circuits
08/24/1999US5943572 Electrically writable and erasable read-only memory cell arrangement and method for its production
08/24/1999US5943571 Method for manufacturing fine structures
08/24/1999US5943561 CMOS transistor and method of fabricating the same
08/24/1999US5943559 Forming gate electrode on insulating substrate, and gate insulating layer on gate electrode; then, forming semiconductor active layer on gate insulating layer and metal silicide layer and metal layer
08/24/1999US5943556 Method for manufacturing an electric charge transfer device
08/24/1999US5943262 Non-volatile memory device and method for operating and fabricating the same
08/24/1999US5943261 Method for programming a flash memory
08/24/1999US5943256 Nonvolatile ferroelectric memory
08/24/1999US5943107 Color display device
08/24/1999US5942952 Voltage controlled oscillator
08/24/1999US5942915 Level shift circuit formed by two cascaded CMOS inverters
08/24/1999US5942886 Power device with a short-circuit detector
08/24/1999US5942856 Thin film transistor circuit and display utilizing the same
08/24/1999US5942797 Power semiconductor module
08/24/1999US5942792 Compound semiconductor device having a multilayer silicon structure between an active region and insulator layer for reducing surface state density at interface
08/24/1999US5942790 Charge effect transistor and a method for manufacturing the same
08/24/1999US5942783 Semiconductor device having improved latch-up protection
08/24/1999US5942779 Reduced-cost, flash memory element and memory apparatus
08/24/1999US5942778 Semiconductor device
08/24/1999US5942776 Shallow junction ferroelectric memory cell and method of making the same
08/24/1999US5942773 Field effect transistor with reduced delay variation
08/24/1999US5942772 Semiconductor device and method of manufacturing the same
08/24/1999US5942768 Semiconductor device having improved crystal orientation
08/24/1999US5942767 Multilayer
08/24/1999US5942764 Semiconductor memory device and method of reading data in semiconductor memory device
08/24/1999US5942447 Method of selectively etching compound semiconductor and method of manufacturing compound semiconductor device using the selective etching method
08/24/1999US5942050 Method of manufacturing a multilayer solar cell
08/19/1999DE19838854A1 Semiconductor device, e.g. nonvolatile memory integrated with charge pump transformer circuit in chip
08/19/1999DE19823133A1 Multiple voltage MOS transistor production for sub-micron applications requiring selection between two or more voltages
08/19/1999DE19804580A1 Active semiconductor diode
08/19/1999DE19752404C1 Very thin semiconductor chip manufacturing method
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