Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/1999
09/10/1999WO1999045588A2 Semiconductor device comprising a glass supporting body onto which a substrate with semiconductor elements and a metallization is attached by means of an adhesive
09/10/1999WO1999045582A1 A method for generation of electrical conducting or semiconducting structures in three dimensions and methods for erasure of the same structures
09/10/1999WO1999045164A1 Method of coating and annealing large area glass substrates
09/10/1999WO1999044937A1 Material with reduced optical absorption
09/10/1999WO1999034484A3 Microelectromechanically, tunable, confocal, vcsel and fabry-perot filter
09/10/1999CA2323747A1 Field effect semiconductor device having dipole barrier
09/09/1999DE19845315A1 Semiconductor device e.g. power semiconductor with trench MOS gate
09/09/1999DE19842441A1 Semiconductor device especially a chip size package for mounting on a printed circuit board
09/09/1999DE19839079A1 Semiconductor device insulating layer structure especially a gate insulation structure for a dual-gate MOSFET
09/08/1999EP0940856A1 Ferroelectric memory element and method of producing the same
09/08/1999EP0940855A2 III-V semiconductor heterojunction field effect transistor
09/08/1999EP0939974A2 Manufacture of a semiconductor device with a mos transistor having an ldd structure
09/08/1999EP0939973A1 Process for manufacturing micromechanical functional elements
09/08/1999EP0939888A1 Micromechanical sensor
09/08/1999EP0761017B1 Semiconductor device of the type sealed in glass having a silver-copper bonding layer between slugs and connection conductors
09/08/1999CN1227973A 半导体器件 Semiconductor devices
09/08/1999CN1227972A Non-volatile semiconductor memory device and data erase method of non-volatile semiconductor memory device
09/08/1999CN1227967A Semiconductor device and method for making the same
09/07/1999US5950103 Manufacture of dielectric oxide lamination structure and electronic circuit device
09/07/1999US5950098 Manufacturing method of a semiconductor device with a silicide layer
09/07/1999US5950091 Method of making a polysilicon gate conductor of an integrated circuit formed as a sidewall spacer on a sacrificial material
09/07/1999US5950090 Method for fabricating a metal-oxide semiconductor transistor
09/07/1999US5950088 Semiconductor memory device and method of manufacturing the same
09/07/1999US5950087 Method to make self-aligned source etching available in split-gate flash
09/07/1999US5950086 A semiconductor device
09/07/1999US5950085 Method of manufacturing electrically erasable semiconductor non-volatile memory device
09/07/1999US5950080 Semiconductor device and method of manufacturing the same
09/07/1999US5950077 Semiconductor device and manufacturing method thereof
09/07/1999US5950076 Methods of forming silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein
09/07/1999US5950075 Semiconductor device having recessed gate regions and method of manufacturing the same
09/07/1999US5950068 Method of fabricating semiconductor devices having a mesa structure for improved surface voltage breakdown characteristics
09/07/1999US5949714 Nonvolatile semiconductor memory device
09/07/1999US5949655 Mounting having an aperture cover with adhesive locking feature for flip chip optical integrated circuit device
09/07/1999US5949250 Two-terminal electrically-reprogrammable programmable logic element
09/07/1999US5949128 Bipolar transistor with MOS-controlled protection for reverse-biased emitter-base junction
09/07/1999US5949124 Edge termination structure
09/07/1999US5949122 Integrated circuit with a device having a predetermined reverse conduction threshold and a thermal compensation device with Vbe multipliers
09/07/1999US5949118 Etching method for silicon substrates and semiconductor sensor
09/07/1999US5949117 Semiconductor integrated circuit
09/07/1999US5949116 MOS device having a source/drain region conforming to a conductive material filled French structure in a substrate
09/07/1999US5949115 Semiconductor device including nickel formed on a crystalline silicon substrate
09/07/1999US5949111 Semiconductor device and fabrication process therefor
09/07/1999US5949107 Semiconductor device and method of fabricating same
09/07/1999US5949106 FET input/output pad layout
09/07/1999US5949105 Insulated-gate field-effect transistor structure and method
09/07/1999US5949104 Source connection structure for lateral RF MOS devices
09/07/1999US5949103 MOSFET with tunneling insulation and fabrication method thereof
09/07/1999US5949102 Semiconductor device having a gate electrode with only two crystal grains
09/07/1999US5949101 Semiconductor memory device comprising multi-level logic value of the threshold voltage
09/07/1999US5949099 Solid-state image sensing device and its driving method
09/07/1999US5949097 Semiconductor device, method for manufacturing same, communication system and electric circuit system
09/07/1999US5949096 Field effect transistor with stabilized threshold voltage
09/07/1999US5949095 Enhancement type MESFET
09/07/1999US5949091 Semiconductor device having polysilicon thin-film
09/07/1999US5948161 Method of fabricating a semiconductor device and method of cleaning a crystalline semiconductor surface
09/07/1999US5947601 Thermometer based on CB tunnelling
09/02/1999WO1999044242A1 Method of detaching thin-film device, method of transferring thin-film device, thin-film device, active matrix substrate, and liquid crystal display
09/02/1999WO1999044241A2 Semiconductor device comprising a mos transistor
09/02/1999WO1999044240A1 Bipolar transistor with an insulated gate electrode
09/02/1999WO1999044238A1 Electrically programmable memory cell arrangement and method for producing the same
09/02/1999WO1999044229A1 A method for generating electrical conducting or semiconducting structures in two or three dimensions, a method for erasing the same structures and an electric field generator/modulator for use with the method for generating
09/02/1999WO1999044094A1 Active matrix substrate and liquid crystal display comprising the same
09/02/1999WO1999028953A3 LONG RANGE ORDERED AND EPITAXIAL OXIDES INCLUDING SiO2, ON Si, SixGe1-x, GaAs AND OTHER SEMICONDUCTORS, MATERIAL SYNTHESIS, AND APPLICATIONS THEREOF
09/02/1999WO1999027576A3 Method of manufacturing a semiconductor device comprising a field effect transistor
09/02/1999WO1999023703A9 High voltage resistant edge structure for semiconductor elements
09/02/1999DE19907201A1 Vertical metal insulator semiconductor field effect transistor (MISFET)
09/02/1999DE19906815A1 Manufacture of liquid crystal display with a reduced number of masking steps
09/02/1999DE19847641A1 Semiconductor device production process especially for producing a conductive structure e.g. a silicide electrode or connection for a MOS transistor
09/02/1999DE19808154A1 Bipolar transistor with insulated gate (IGBT)
09/01/1999EP0939446A1 Field effect controlled power semiconductor component
09/01/1999EP0939439A1 Method of forming fully depleted simox CMOS having electrostatic discharge protection
09/01/1999EP0938752A1 Asymmetrical transistor with lightly and heavily doped drain regions and ultra-heavily doped source region
09/01/1999EP0938751A1 Controllable semiconductor structure with improved switching properties
09/01/1999EP0871557B1 Method of producing metal quantum dots
09/01/1999EP0715771B1 SiC FIELD-EFFECT TRANSISTORS AND METHOD OF MANUFACTURING THEM
09/01/1999CN1227418A Field effect transistor and method of its manufacture
09/01/1999CN1227416A Semiconductor devices and manufacturing methods thereof
08/1999
08/31/1999US5946586 Method of manufacturing a glass-covered semiconductor device
08/31/1999US5946585 Hydrogen ion implantation in substrates and insulation
08/31/1999US5946582 Method of making an InP-based heterojunction bipolar transistor with reduced base-collector capacitance
08/31/1999US5946580 Method to form elevated source/drain with solid phase diffused source/drain extension for MOSFET
08/31/1999US5946578 Method of fabricating semiconductor device having source/drain layer raised from substrate surface
08/31/1999US5946575 Method for manufacturing low breakdown voltage MOS and high breakdown voltage MOS
08/31/1999US5946572 Method of manufacturing a semiconductor device having recessed gate structures
08/31/1999US5946563 Semiconductor device and method of manufacturing the same
08/31/1999US5946562 Polysilicon thin film transistors with laser-induced solid phase crystallized polysilicon channel
08/31/1999US5946561 Semiconductor device and method for forming the same
08/31/1999US5946560 Transistor and method of forming the same
08/31/1999US5946559 Method of forming a field effect transistor
08/31/1999US5946549 Method for manufacturing sensor using semiconductor
08/31/1999US5946548 Method for manufacturing a MISFET device where the conductive film has a thickness
08/31/1999US5946240 Nonvolatile semiconductor memory device and method of manufacturing the same
08/31/1999US5946230 Nonvolatile semiconductor memory device having the reliability of gate insulating film of memory cells enhanced and method for manufacturing the same
08/31/1999US5946229 Semiconductor device having device supplying voltage higher than power supply voltage
08/31/1999US5946224 Ferroelectric memory device, a method for read out stored data and a method for standing-by
08/31/1999US5946060 Liquid crystal display device and method for driving the same
08/31/1999US5946058 Transistor matrix device including features for minimizing the effect of parasitic capacitances
08/31/1999US5946034 Charge/voltage conversion device
08/31/1999US5945734 Wire-bond free input/output interface for GaAs ICs with means of determining known good die
08/31/1999US5945730 Semiconductor power device