Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/1999
10/07/1999WO1999050905A1 Wafer-pair having deposited layer sealed chambers
10/07/1999WO1999050900A1 Reduced channel length lightly doped drain transistor using a sub-amorphous large tilt angle implant to provide enhanced lateral diffusion
10/07/1999WO1999050890A1 Method for making multilayer thin-film electronics
10/07/1999WO1999050889A2 Printed insulators for active and passive electronic devices
10/07/1999WO1999050862A1 Voltage boosting circuit including capacitor with reduced parasitic capacitance
10/07/1999WO1999028833A8 Method and system for improving a transistor model
10/07/1999DE19914857A1 Injecting charge carriers into EPROM cell floating gate
10/07/1999DE19900992A1 Semiconductor device especially an SOI MOSFET
10/07/1999DE19860829A1 Halbleiterbaustein und Verfahren zu dessen Herstellung Semiconductor device and process for its preparation
10/06/1999EP0948058A1 Floating gate memory with substrate band-to-band tunneling induced hot electron injection
10/06/1999EP0948057A1 Semiconductor device and process for manufacturing the same
10/06/1999EP0948054A2 Buried patterned conductor planes for semiconductor-on-insulator integrated circuit
10/06/1999EP0948050A1 Electronic semiconductor power device with polycrystalline silicon components
10/06/1999EP0948045A1 Method of fabrication of a memory device in BiCMOS technology
10/06/1999EP0948041A2 Insulated gate transistor, a method of manufacturing same, and semiconductor integrated circuit device
10/06/1999EP0948040A1 Method for manufacturing bipolar transistor capable of supressing deterioration of transistor characteristics
10/06/1999EP0948038A1 Method of fabricating an avalanche diode with controllable threshold
10/06/1999EP0948036A2 Method for forming semiconductor chips with a mesa structure by sawing
10/06/1999EP0947835A2 Micromechanical component having a moving dielectric element and a method of manufacture
10/06/1999EP0947039A2 Time-domain circuit modeller
10/06/1999EP0946991A1 Non-volatile storage cell
10/06/1999EP0946990A1 Mos device having a gate to body connection formed on a soi substrate
10/06/1999EP0946989A1 Ferroelectric based memory devices utilizing low curie point ferroelectrics and encapsulation
10/06/1999EP0946988A1 Memory redundancy circuit using single polysilicon floating gate transistors as redundancy elements
10/06/1999EP0946987A1 Mos transistor, and production of layers for that type of transistor
10/06/1999EP0946985A1 Memory cell arrangement and process for manufacturing the same
10/06/1999EP0946983A1 Lateral bipolar field effect mode hybrid transistor and method for the same
10/06/1999EP0946792A1 Micromechanical building component and production process
10/06/1999EP0946783A1 Semiconducting devices and method of making thereof
10/06/1999CN1231066A Semiconductor component with linear current-to-voltage characteristics
10/06/1999CN1231065A Method of transferring thin film device, thin film device, thin film integrated circuit device, active matrix substrate, liquid crystal display and electronic apparatus
10/06/1999CN1230791A Manufacture of film transistor switch device
10/06/1999CN1230790A Semiconductor device with conductor flug and fabrication method thereof
10/06/1999CN1230788A Buried patterned conductor planes for semiconductor-on-insulator integrated circuit
10/06/1999CN1230787A Flash memory unit with high coupling ratio and its manufacture
10/06/1999CN1230786A Hierarchic flash memory structure and its manufacture
10/06/1999CN1230780A Improved policide
10/06/1999CN1230779A Semiconductor device and method for fabricating thereof
10/06/1999CN1230776A Semiconductor component and its manufacturing method
10/06/1999CN1230771A Method for manufacturing bipolar transistor capable of supressing deterioration of transistor characteristics
10/06/1999CN1230769A Manufacturing method of semiconductor device
10/06/1999CN1230751A Semiconductor memory device
10/05/1999US5963838 Method of manufacturing a semiconductor device having wiring layers within the substrate
10/05/1999US5963837 Method of planarizing the semiconductor structure
10/05/1999US5963829 Method of forming silicide film
10/05/1999US5963826 Method of forming contact hole and multilayered lines structure
10/05/1999US5963824 Method of making a semiconductor device with adjustable threshold voltage
10/05/1999US5963822 Method of forming selective epitaxial film
10/05/1999US5963813 Integrated circuitry and method of forming a field effect transistor
10/05/1999US5963811 Method of fabricating a MOS device with a localized punchthrough stopper
10/05/1999US5963810 Semiconductor device having nitrogen enhanced high permittivity gate insulating layer and fabrication thereof
10/05/1999US5963809 Process for forming a transistor
10/05/1999US5963808 Method of forming an asymmetric bird's beak cell for a flash EEPROM
10/05/1999US5963807 Silicon carbide field effect transistor with increased avalanche withstand capability
10/05/1999US5963806 Method of forming memory cell with built-in erasure feature
10/05/1999US5963800 CMOS integration process having vertical channel
10/05/1999US5963797 Method of manufacturing semiconductor devices
10/05/1999US5963791 Silicon carbide MOSFET having self-aligned gate structure and method of fabrication
10/05/1999US5963779 Integrated circuit using a back gate voltage for burn-in operations
10/05/1999US5963500 Semiconductor memory device
10/05/1999US5963480 Highly compact EPROM and flash EEPROM devices
10/05/1999US5963475 Advanced nonvolatile memories adaptable to dynamic random access memories and methods of operating therein
10/05/1999US5963471 Semiconductor device
10/05/1999US5963466 Ferroelectric memory having a common plate electrode
10/05/1999US5963465 Symmetric segmented memory array architecture
10/05/1999US5963358 Semiconductor device and method for its operation
10/05/1999US5963287 Display unit with flexible printed circuit board
10/05/1999US5963278 Electro-optical device and method for driving the same
10/05/1999US5962916 Thin-film transistor and manufacturing method thereof
10/05/1999US5962913 Bipolar transistor having a particular contact structure
10/05/1999US5962912 Power semiconductor component with monolithically integrated precision resistor and method for the manufacture thereof
10/05/1999US5962910 Metal-to-metal via-type antifuse
10/05/1999US5962905 Magnetoresistive element
10/05/1999US5962904 Gate electrode stack with diffusion barrier
10/05/1999US5962898 Semiconductor device
10/05/1999US5962897 Semiconductor device and method for forming the same
10/05/1999US5962896 Thin film transistor including oxidized film by oxidation of the surface of a channel area semiconductor
10/05/1999US5962895 SOI transistor having a self-aligned body contact
10/05/1999US5962894 Trench transistor with metal spacers
10/05/1999US5962893 Semiconductor device
10/05/1999US5962892 MISFET and complementary MISFET device having high performance source and drain diffusion layer
10/05/1999US5962891 Nonvolatile semiconductor memory device
10/05/1999US5962890 Non-volatile semiconductor memory
10/05/1999US5962889 Nonvolatile semiconductor memory with a floating gate that has a bottom surface that is smaller than the upper surface
10/05/1999US5962888 Well structure non-volatile memory device and method for fabricating the same
10/05/1999US5962884 Single transistor ferroelectric memory cell with asymmetrical ferroelectric polarization and method of making the same
10/05/1999US5962883 Article comprising an oxide layer on a GaAs-based semiconductor body
10/05/1999US5962882 Charge coupled devices including buried transmission gates
10/05/1999US5962880 Heterojunction bipolar transistor
10/05/1999US5962879 Super self-aligned bipolar transistor
10/05/1999US5962878 Surge protection device and method of fabricating the same
10/05/1999US5962877 Inverter apparatus having improved switching element
10/05/1999US5962872 Semiconductor device and method for fabricating the same
10/05/1999US5962871 Method for producing semiconductor device
10/05/1999US5962870 Insulated gate field effect semiconductor devices
10/05/1999US5962864 Gated resonant tunneling device and fabricating method thereof
10/05/1999US5962789 Semiconductor acceleration sensor using semiconductor microworking technology
10/05/1999US5962631 2, 7-aryl-9-substituted fluorenes and 9-substituted fluorene oligomers and polymers
10/05/1999US5961877 3.5-15.8 mole percent of hf; 0.2-9.7 mole percent of hno3; 34.8-82.6 mole percent of acetic acid; 12.3-46.5 mole percent of h2o; and wherein the molecular ratio of hno.sub.3 to hf is less than about 0.78.
09/1999
09/30/1999WO1999049711A1 Clustering adapter for spherical shaped devices
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