| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 09/30/1999 | WO1999049520A1 Vacuum field transistor |
| 09/30/1999 | WO1999049519A1 Circuit structure with mos-transistor and method for realising the same |
| 09/30/1999 | WO1999049510A1 Method for fabricating an electrically addressable silicon-on-sapphire light valve |
| 09/30/1999 | WO1999049506A1 Method and apparatus for manufacturing a micromechanical device |
| 09/30/1999 | WO1999049503A1 Ultra-high resolution liquid crystal display on silicon-on-sapphire |
| 09/30/1999 | WO1999049323A1 Microsensor with resonator structure |
| 09/30/1999 | WO1999048810A1 Method for construction of nanotube matrix material |
| 09/30/1999 | DE19854886A1 Designing semiconductor component containing MOS transistor on SOI substrate |
| 09/30/1999 | DE19816448C1 Universal-Halbleiterscheibe für Hochspannungs-Halbleiterbauelemente, ihr Herstellungsverfahren und ihre Verwendung Universal wafer for high voltage semiconductor devices, their method of preparation and their use |
| 09/30/1999 | DE19812945A1 Halbleiterbauelement und Verfahren zu dessen Herstellung Semiconductor device and process for its preparation |
| 09/30/1999 | DE19812773A1 Mikrosensor mit einer Resonatorstruktur Microsensor with a resonator structure |
| 09/29/1999 | EP0945905A2 FET channel structure |
| 09/29/1999 | EP0945904A1 Film-like composite structure and method of manufacture thereof |
| 09/29/1999 | EP0945902A1 MOS transistor for DRAM memory cell and method of making the same |
| 09/29/1999 | EP0945899A2 Semiconductor device comprising a semi-insulating region and its manufacturing method |
| 09/29/1999 | EP0945897A1 Organic gate sidewall spacers |
| 09/29/1999 | EP0945873A2 Semiconductor memory device |
| 09/29/1999 | EP0944923A1 Ultra-low power-delay product nnn/ppp logic devices |
| 09/29/1999 | EP0944919A1 Mis transistor with self-aligned metal grid and method for making it |
| 09/29/1999 | EP0944917A1 Os RECTIFYING SCHOTTKY AND OHMIC JUNCTION AND W/WC/TiC OHMIC CONTACTS ON SiC |
| 09/29/1999 | EP0944916A1 Very long and highly stable atomic wires, method for making these wires, application in nano-electronics |
| 09/29/1999 | EP0719456B1 Charge coupled device, and imaging device comprising such a charge coupled device |
| 09/29/1999 | EP0663698B1 Semiconductor device and its manufacture |
| 09/29/1999 | CN2341278Y Integrated phase shift controlling thyristor module with low controlling power consumption |
| 09/29/1999 | CN1230030A Insulated-gate type semiconductor device and manufacturing method thereof |
| 09/29/1999 | CN1230029A Vertical type metal insulator semiconductor field effect transistor and method of its production |
| 09/29/1999 | CN1230028A Non-volatile semiconductor memory featuring effective cell area reduction using contactless technology |
| 09/29/1999 | CN1230027A Semiconductor memory device |
| 09/29/1999 | CN1045350C Unlostable semiconductor memory device and method of correcting over inputing |
| 09/29/1999 | CN1045348C Method for forming thin tunneling windows in eeproms |
| 09/29/1999 | CN1045347C Method for producing semiconductor |
| 09/28/1999 | USRE36315 Semiconductor compound |
| 09/28/1999 | USRE36314 Insulated gate field effect semiconductor devices having a LDD region and an anodic oxide film of a gate electrode |
| 09/28/1999 | US5960323 Laser anneal method for a semiconductor device |
| 09/28/1999 | US5960303 Process of forming titanium silicide interconnects |
| 09/28/1999 | US5960302 Method of making a dielectric for an integrated circuit |
| 09/28/1999 | US5960291 Asymmetric channel transistor and method for making same |
| 09/28/1999 | US5960283 Nonvolatile semiconductor memory device and method of fabrication of the same |
| 09/28/1999 | US5960281 Methods of fabricating microelectronic electrode structures using hemispherical grained (HSG) silicon |
| 09/28/1999 | US5960277 Method of making a merged device with aligned trench FET and buried emitter patterns |
| 09/28/1999 | US5960275 Power MOSFET fabrication process to achieve enhanced ruggedness, cost savings, and product reliability |
| 09/28/1999 | US5960273 Method of manufacturing a semiconductor device including a bipolar transistor |
| 09/28/1999 | US5960272 Element-isolating construct of a semiconductor integrated circuit having an offset region between impurity doped regions, and process of manufacturing the construct |
| 09/28/1999 | US5960271 Short channel self-aligned VMOS field effect transistor |
| 09/28/1999 | US5960270 Method for forming an MOS transistor having a metallic gate electrode that is formed after the formation of self-aligned source and drain regions |
| 09/28/1999 | US5960269 Method for manufacturing a field effect transistor using an auxiliary layer deposited at a very flat incident angle |
| 09/28/1999 | US5960268 Semiconductor device and method of fabricating the same |
| 09/28/1999 | US5960266 Process for manufacturing a quantum memory element device |
| 09/28/1999 | US5960265 Method of making EEPROM having coplanar on-insulator FET and control gate |
| 09/28/1999 | US5960264 Method of manufacturing an insulated gate semiconductor device |
| 09/28/1999 | US5960256 Wafer layout of semiconductor device and manufacturing method thereof |
| 09/28/1999 | US5959896 Multi-state flash memory cell and method for programming single electron differences |
| 09/28/1999 | US5959895 Nonvolatile semiconductor memory cell capable of saving overwritten cell and its saving method |
| 09/28/1999 | US5959888 Non-volatile semiconductor memory device and method of manufacturing non-volatile semiconductor memory device |
| 09/28/1999 | US5959887 Electrically erasable programmable nonvolatile semiconductor memory having dual operation function |
| 09/28/1999 | US5959879 Ferroelectric memory devices having well region word lines and methods of operating same |
| 09/28/1999 | US5959709 Display unit with flexible printed circuit board |
| 09/28/1999 | US5959357 Fet array for operation at different power levels |
| 09/28/1999 | US5959345 Edge termination for zener-clamped power device |
| 09/28/1999 | US5959344 High forward current gain bipolar transistor |
| 09/28/1999 | US5959342 Semiconductor device having a high voltage termination improvement |
| 09/28/1999 | US5959337 Air gap spacer formation for high performance MOSFETs |
| 09/28/1999 | US5959335 Device design for enhanced avalanche SOI CMOS |
| 09/28/1999 | US5959333 Reduction of dopant diffusion by the co-implantation of impurities into the transistor gate conductor |
| 09/28/1999 | US5959331 High density transistor component and its manufacturing method |
| 09/28/1999 | US5959330 Semiconductor device and method of manufacturing same |
| 09/28/1999 | US5959329 Insulating oxide film formed by high-temperature wet oxidation |
| 09/28/1999 | US5959328 Electrically programmable memory cell arrangement and method for its manufacture |
| 09/28/1999 | US5959322 Isolated SOI memory structure with vertically formed transistor and storage capacitor in a substrate |
| 09/28/1999 | US5959317 High frequency hetero junction type field effect transistor using multilayer electron feed layer |
| 09/28/1999 | US5959314 Polycrystalline silicon from the crystallization of microcrystalline silicon |
| 09/28/1999 | US5959313 Thin film semiconductor having a monocrystalline region containing carbon, nitrogen and oxygen and crystallization promotor metal component |
| 09/28/1999 | US5959312 Sensor with doped microcrystalline silicon channel leads with bubble formation protection means |
| 09/28/1999 | US5959208 Acceleration sensor |
| 09/28/1999 | US5958508 Dielectric with gradiant concentrtaion |
| 09/28/1999 | US5958505 Applying a silicide layer on a surface of a silicon-based substrate, applying a mask to the silicide layer, and locally oxidizing the silicide layer through the mask on a boundary surface thereof |
| 09/23/1999 | WO1999048153A1 Silicon carbide semiconductor switching device |
| 09/23/1999 | WO1999048102A1 An electrically-programmable read-only memory fabricated using a dynamic random access memory fabrication process and methods for programming same |
| 09/23/1999 | WO1999048078A1 Transistor circuit, display panel and electronic apparatus |
| 09/23/1999 | WO1999039170B1 Method of manufacturing a semiconductor component |
| 09/23/1999 | DE19909993A1 High speed, low power dissipation bipolar transistor with a self-aligned epitaxial base is produced |
| 09/23/1999 | DE19901386A1 Groove bus structure for field coupled power MOSFET |
| 09/23/1999 | DE19845294A1 Semiconductor device with silicon-on-insulator structure |
| 09/23/1999 | DE19812212A1 MOS-Transistor in einer Ein-Transistor-Speicherzelle mit einem lokal verdickten Gateoxid und Herstellverfahren MOS transistor in a one-transistor memory cell with a locally thickened gate oxide and manufacturing processes |
| 09/22/1999 | EP0944116A2 Fabrication method of cadmium selenide thin film transistors |
| 09/22/1999 | EP0944113A1 Protection structure for high-voltage integrated electronic devices |
| 09/22/1999 | EP0944090A2 Semiconductor memory device |
| 09/22/1999 | EP0943923A1 Semiconductor acceleration sensor and manufacturing method thereof |
| 09/22/1999 | EP0943158A2 Affinity based self-assembly systems and devices for photonic and electronic applications |
| 09/22/1999 | EP0943156A1 METHOD FOR PRODUCING A MATRIX FROM THIN-FILM TRANSISTORS, INCLUDING WITH a:Si-H AS SEMICONDUCTOR, INTENDED FOR LIQUID CRYSTAL DISPLAYS |
| 09/22/1999 | CN1229278A Semiconductor device and method for manufacturing same |
| 09/22/1999 | CN1229270A Semiconductor apparatus and method for manufacturing same |
| 09/21/1999 | USRE36311 Integrated high-voltage bipolar power transistor and low voltage MOS power transistor structure in the emitter switching configuration and relative manufacturing process |
| 09/21/1999 | US5956617 Method of manufacturing a semiconductor device employing salicide technology |
| 09/21/1999 | US5956614 Process for forming a metal-silicide gate for dynamic random access memory |
| 09/21/1999 | US5956611 Field emission displays with reduced light leakage |
| 09/21/1999 | US5956604 Ohmic contact to Gallium Arsenide using epitaxially deposited Cobalt Digermanide |
| 09/21/1999 | US5956603 Gas immersion laser annealing method suitable for use in the fabrication of reduced-dimension integrated circuits |
| 09/21/1999 | US5956593 Semiconductor device comprising an MOS capacitance |
| 09/21/1999 | US5956590 Process of forming a field effect transistor without spacer mask edge defects |