Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/1999
10/19/1999US5969922 Failure indicator for a protection component
10/19/1999US5969782 Active matrix liquid crystal display having interdigitated pixel and first counter electrodes in the same plane and a second counter connected to the first counter electrode via a contact hole in a insulating layer
10/19/1999US5969591 Single-sided differential pressure sensor
10/19/1999US5969564 Insulated-gate field effect transistor and method for driving thereof
10/19/1999US5969423 Aluminum-containing films derived from using hydrogen and oxygen gas in sputter deposition
10/19/1999US5969419 Structure comprising platinum layer bound to a surface of a silicon oxide layer
10/19/1999US5969417 Chip package device mountable on a mother board in whichever of facedown and wire bonding manners
10/19/1999US5969407 MOSFET device with an amorphized source
10/19/1999US5969402 Slot filled with tungsten.
10/19/1999US5969400 High withstand voltage semiconductor device
10/19/1999US5969398 Method for producing a semiconductor device and a semiconductor device
10/19/1999US5969397 Low defect density composite dielectric
10/19/1999US5969396 Semiconductor device and method of fabricating the same
10/19/1999US5969394 Method and structure for high aspect gate and short channel length insulated gate field effect transistors
10/19/1999US5969393 Semiconductor device and method of manufacture of the same
10/19/1999US5969391 Complementary insulated-gate field-effect transistors having improved anti-latchup characteristic
10/19/1999US5969387 Lateral thin-film SOI devices with graded top oxide and graded drift region
10/19/1999US5969386 Aluminum gates including ion implanted composite layers
10/19/1999US5969385 Ultra-low power-delay product NNN/PPP logic devices
10/19/1999US5969384 Flash memory having separate data programming and erasing terminals
10/19/1999US5969383 Split-gate memory device and method for accessing the same
10/19/1999US5969382 EPROM in high density CMOS having added substrate diffusion
10/19/1999US5969378 Latch-up free power UMOS-bipolar transistor
10/19/1999US5969376 Organic thin film transistor having a phthalocyanine semiconductor layer
10/19/1999US5968150 Processor element having a plurality of CPUs for use in a multiple processor system
10/19/1999US5967795 SiC semiconductor device comprising a pn junction with a voltage absorbing edge
10/19/1999US5967794 Method for fabricating a field effect transistor having elevated source/drain regions
10/14/1999WO1999052152A1 Semiconductor device and power converter
10/14/1999WO1999052150A1 Guard structure for bipolar semiconductor device
10/14/1999WO1999052138A1 A bipolar transistor having low extrinsic base resistance
10/14/1999WO1999052131A1 Semiconductor contact fabrication method
10/14/1999WO1999052013A1 Tft array substrate for liquid crystal display and method of producing the same, and liquid crystal display and method of producing the same
10/14/1999WO1999027586A3 INxGa1-xP STOP-ETCH LAYER FOR SELECTIVE RECESS OF GALLIUM ARSENIDE-BASED EPTITAXIAL FIELD EFFECT TRANSISTORS AND PROCESS THEREFOR
10/14/1999WO1999021215A3 Methods of forming power semiconductor devices having merged split-well body regions therein and devices formed thereby
10/14/1999DE19916575A1 Semiconductor module with resistor in one circuit
10/14/1999DE19914697A1 Depletion MOS semiconducting component for MOS power IC
10/14/1999DE19910890A1 Split gate MOS transistor for high voltage operation requires no additional manufacturing steps when produced using a conventional double poly-manufacturing method
10/14/1999DE19857356A1 Heterojunction bipolar transistor especially a high output power HBT with a multi-finger structure used in high frequency and high power components
10/14/1999DE19853433A1 Semiconductor device e.g. a PMOS, NMOS or CMOS transistor, a MOS capacitor or a Bi-MOS device
10/13/1999EP0949684A2 Trench capacitor with epitaxial buried layer
10/13/1999EP0949683A1 Zener diodes assembly
10/13/1999EP0949682A2 Ferroelectric memory device with improved ferroelectric capacitor characteristics
10/13/1999EP0949669A2 Method of fabricating semiconductor device
10/13/1999EP0949667A1 Electrically programmable memory cell
10/13/1999EP0949666A1 Base emitter region of a submicron bipolar transistor
10/13/1999EP0949665A2 High speed and low parasitic capacitance bipolar transistor and method for fabricating it
10/13/1999EP0949494A2 Semiconductive pressure sensor
10/13/1999EP0948819A2 Multiple magnetic tunnel structures
10/13/1999EP0948818A1 High density trench dmos transistor with trench bottom implant
10/13/1999EP0948816A1 Self-aligned non-volatile storage cell
10/13/1999EP0948812A1 Surface connectable semiconductor bridge elements, devices and methods
10/13/1999EP0948808A1 Integrated circuits and methods for their fabrication
10/13/1999EP0901689A4 Charge dissipation field emission device
10/13/1999CN1231771A Semiconductor device with a protected barrier for a stack cell
10/13/1999CN1231770A Semiconductor component for high voltage
10/13/1999CN1231768A Process for producing barrier-free semiconductor storage assemblies
10/13/1999CN1231760A Process for the manufacture of a highly 'epsilon' dielectric or ferroelectric coating
10/13/1999CN1231533A Semiconductor device and making method and substrate for making same
10/13/1999CN1231517A Method for driving solid image sensor
10/13/1999CN1231513A Semiconductor device and design method and the recording medium and support system for said method
10/13/1999CN1231506A High-speed and low parasitic capacitance semiconductor device and making method thereof
10/13/1999CN1231503A Method for making semiconductor device and the semiconductor device
10/13/1999CN1231478A Non-volatile semiconductor memory device and overwriting remedial method thereof
10/12/1999US5966629 Method for fabricating an electrode structure
10/12/1999US5966625 Method for making a slant-surface silicon wafer having a reconstructed atomic-level stepped surface structure
10/12/1999US5966621 Semiconductor processing method of forming field isolation oxide relative to a semiconductor substrate
10/12/1999US5966609 Method of fabricating dome-shaped semiconductor device
10/12/1999US5966608 Method of forming high voltage device
10/12/1999US5966606 Method for manufacturing a MOSFET having a side-wall film formed through nitridation of the gate electrode
10/12/1999US5966604 Method of manufacturing MOS components having lightly doped drain structures
10/12/1999US5966602 Nonvolatile semiconductor memory and fabricating method thereof
10/12/1999US5966598 Semiconductor device having an improved trench isolation and method for forming the same
10/12/1999US5966597 Method of forming a semiconductor device
10/12/1999US5966596 Method of fabricating semiconductor devices by crystallizing amorphous silicon with nickel
10/12/1999US5966594 Semiconductor device and method for manufacturing the same
10/12/1999US5966518 Capacitor designing method of MOS transistor
10/12/1999US5966517 Semiconductor device using diode place-holders and method of manufacture thereof
10/12/1999US5966325 Semiconductor memory device with improved read speed
10/12/1999US5966193 LCD device having coupling capacitances and shielding films
10/12/1999US5966066 Micromechanical memory sensor
10/12/1999US5965931 Bipolar transistor having base region with coupled delta layers
10/12/1999US5965930 High frequency bipolar transistor and method of forming the same
10/12/1999US5965929 Bipolar Silicon transistor with arsenic and phosphorous ratio
10/12/1999US5965928 Semiconductor device with MOS capacitor and fabrication method thereof
10/12/1999US5965926 Circuit structure having at least one MOS transistor and method for its production
10/12/1999US5965925 Integrated circuit layout methods and layout structures
10/12/1999US5965923 Lateral bipolar transistor and apparatus using same
10/12/1999US5965919 Semiconductor device and a method of fabricating the same
10/12/1999US5965918 Semiconductor device including field effect transistor
10/12/1999US5965917 Structure and method of formation of body contacts in SOI MOSFETS to elimate floating body effects
10/12/1999US5965915 Laser processing method, method for forming a flash memory, insulated gate semiconductor device and method for forming the same
10/12/1999US5965914 Thin film transistor having a branched gate and channel
10/12/1999US5965913 Dense vertical programmable read only memory cell structures and processes for making them
10/12/1999US5965912 Variable capacitor and method for fabricating the same
10/12/1999US5965911 Mos transistor adopting titanium-carbon-nitride gate electrode and manufacturing method thereof
10/12/1999US5965909 Semiconductor device having high gate turn-on voltage
10/12/1999US5965905 Thin-film transistor and SRAM memory cell equipped therewith
10/12/1999US5965904 Semiconductor device comprising silicon semiconductor layer
10/12/1999US5965212 Method of producing metal quantum dots
10/07/1999WO1999050911A2 Electronic devices comprising thin-film transistors
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