Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/1999
10/26/1999US5973382 Capacitor on ultrathin semiconductor on insulator
10/26/1999US5973381 MOS capacitor and MOS capacitor fabrication method
10/26/1999US5973379 Ferroelectric semiconductor device
10/26/1999US5973378 Semiconductor device with insulated gate electrode configured for reducing electric field adjacent drain
10/26/1999US5973376 Architecture having diamond shaped or parallelogram shaped cells
10/26/1999US5973373 Read-only-memory cell arrangement using vertical MOS transistors and gate dielectrics of different thicknesses and method for its production
10/26/1999US5973370 Preventing boron penetration through thin gate oxide of P-channel devices in advanced CMOS technology
10/26/1999US5973367 Multiple gated MOSFET for use in DC-DC converter
10/26/1999US5973366 High voltage integrated circuit
10/26/1999US5973365 MOS transistor and lateral insulating method of a MOS transistor active region
10/26/1999US5973364 MIS semiconductor device having body-contact region
10/26/1999US5973363 CMOS circuitry with shortened P-channel length on ultrathin silicon on insulator
10/26/1999US5973362 Semiconductor device and method for fabricating the same
10/26/1999US5973361 DMOS transistors with diffusion merged body regions manufactured with reduced number of masks and enhanced ruggedness
10/26/1999US5973360 Field effect-controllable semiconductor component
10/26/1999US5973359 MOS type semiconductor device
10/26/1999US5973358 SOI device having a channel with variable thickness
10/26/1999US5973357 Non-volatile memory elements
10/26/1999US5973355 Nonvolatile semiconductor memory device and manufacturing method of the same
10/26/1999US5973354 Single polycylindrical flash memory cell having high coupling ratio
10/26/1999US5973353 Methods and arrangements for forming a tapered floating gate in non-volatile memory semiconductor devices
10/26/1999US5973351 Semiconductor device with high dielectric constant insulator material
10/26/1999US5973342 Semiconductor device having an iridium electrode
10/26/1999US5973341 Lateral thin-film silicon-on-insulator (SOI) JFET device
10/26/1999US5973338 Insulated gate type bipolar-transistor
10/26/1999US5973334 Magnetic device and magnetic sensor using the same
10/26/1999US5972804 Process for forming a semiconductor device
10/26/1999US5972801 Forming oxide layer on prepared silicon carbide layer; exposing to oxidizing gas to densify oxide layer and improve interface between oxide layer and underlying silicon carbide layer
10/26/1999US5972800 Method for fabricating a semiconductor device with multi-level structured insulator
10/26/1999US5972791 Vapor depositing titanium, aluminum, and nitrogen on silicon substate to form electrically conductive diffusion barrier layer of titanium aluminum nitride
10/26/1999US5972790 Depositing titanium onto semiconductor interconnet to form self-aligned titanium silicide structure by plasma-enhanced chemical vapor deposition
10/26/1999US5972785 Depositing metal film on diffusion layer surface and annealing to form metal silicide; removing unreacted metal film by etching; selectively depositing silicon layer on silicide layer; depositing metal film and annealing
10/26/1999US5972783 Method for fabricating a semiconductor device having a nitrogen diffusion layer
10/26/1999US5972774 Process for fabricating a semiconductor device having contact hole open to impurity region coplanar with buried isolating region
10/26/1999US5972768 Method of manufacturing semiconductor device having low contact resistance
10/26/1999US5972765 Providing semiconductor and gate oxide having high concentration of deuterium at interface of gate oxide with semiconductor; forming deuterium reservoir; forming diffusion barrier layer over reservoir layer
10/26/1999US5972763 Providing substrate having gate oxide layer and polysilicon layer; polysilicon layer and the gate oxide layer are patterned to form a gate electrode region; forming silicon nitride layer and oxide layer and etching
10/26/1999US5972762 Forming gate oxide on substrate; depositing polysilicon layer and then antireflective coating; etching antireflective coating; doping; depositing silicon nitride layer; forming side wall spacers; recessing; forming source/drain
10/26/1999US5972761 Method of making MOS transistors with a gate-side air-gap structure and an extension ultra-shallow S/D junction
10/26/1999US5972758 Pedestal isolated junction structure and method of manufacture
10/26/1999US5972754 Method for fabricating MOSFET having increased effective gate length
10/26/1999US5972753 Method of self-align cell edge implant to reduce leakage current and improve program speed in split-gate flash
10/26/1999US5972751 Forming silicon dioxide layers on substrate; selectively patterning silicon dioxide layer and additional layer to form stacked gate structure; selectively introducing nitrogen into portion of substrare and adjacent portion of silicon dioxide
10/26/1999US5972750 Nonvolatile semiconductor memory device and manufacturing method of the same
10/26/1999US5972744 Quantum effect device, method of manufacturing the same
10/26/1999US5972741 Method of manufacturing semiconductor device
10/26/1999US5972437 Exposing a surface of a semiconductor to a plasma containing oxygen in a reaction chamber at a first pressure in order to remove impurities; maintaining said reaction chamber at a second pressure lower than the first to discharge the
10/21/1999WO1999053553A2 Semiconductor device having a rectifying junction and method of manufacturing same
10/21/1999WO1999053552A1 Product made of silicon carbide and a method for the production thereof
10/21/1999WO1999053551A1 Product made of silicon carbide and a method for the production thereof
10/21/1999WO1999053550A1 High-voltage edge termination for planar structures
10/21/1999WO1999053549A1 Universal semiconductor wafer for high-voltage semiconductor components
10/21/1999WO1999053541A1 Method for producing an soi (silicon on insulator) wafer for low-impedance high-voltage semiconductor components
10/21/1999WO1999038016A8 An arrangement for measuring angular velocity
10/21/1999DE19840824C1 Ferroelectric transistor especially for a non-volatile memory cell
10/20/1999EP0951075A1 Semiconductor device with a p-n junction and method for driving the same
10/20/1999EP0951074A2 Multi-emitter bipolar transistor
10/20/1999EP0951071A1 Semiconductor device
10/20/1999EP0951059A2 Method of fabricating ferroelectric integrated circuit using oxygen anneal to inhibit and repair hydrogen degradation
10/20/1999EP0951058A2 Method of fabricating ferroelectric integrated circuit using dry and wet etching
10/20/1999EP0951053A2 Field effect devices and capacitors with improved thin film dielectrics
10/20/1999EP0950265A1 Uniform ballast resistance for a thermally balanced radio frequency power transistor
10/20/1999EP0950173A1 Method for making a thin film resonant microbeam absolute pressure sensor
10/20/1999EP0950172A1 Method for producing a suspended element in a micro-machined structure
10/20/1999EP0950132A1 CaTiO 3? INTERFACIAL TEMPLATE STRUCTURE ON SUPERCONDUCTOR
10/20/1999EP0731972A4 A capacitorless dram device on silicon-on-insulator substrate
10/20/1999CN1232574A Process for producing barrier-free semiconductor storage assemblies
10/20/1999CN1232300A Semiconductor device and fabrication method
10/20/1999CN1232299A Semiconductor device
10/20/1999CN1232295A Nonvolatile semiconductor memory and method of manufacturing the nonvolatile semiconductor memory
10/20/1999CN1232294A Ferroelectric memory device with improved ferroelectric capacity characteristic
10/20/1999CN1045844C Method of fabricating thin-film transistor
10/19/1999US5970380 Methods of forming semiconductor switching devices having silicide regions therein
10/19/1999US5970371 Method of forming sharp beak of poly to improve erase speed in split-gate flash EEPROM
10/19/1999US5970369 Semiconductor device with polysilicon layer of good crystallinity and its manufacture method
10/19/1999US5970356 Method for fabricating a bipolar transistor
10/19/1999US5970355 Method for fabricating semiconductor device
10/19/1999US5970353 Reduced channel length lightly doped drain transistor using a sub-amorphous large tilt angle implant to provide enhanced lateral diffusion
10/19/1999US5970352 Field effect transistor having elevated source and drain regions and methods for manufacturing the same
10/19/1999US5970351 Production method for a MISFET, complementary MISFET
10/19/1999US5970350 Semiconductor device having a thin gate oxide and method of manufacture thereof
10/19/1999US5970349 Semiconductor device having one or more asymmetric background dopant regions and method of manufacture thereof
10/19/1999US5970347 High performance mosfet transistor fabrication technique
10/19/1999US5970344 Method of manufacturing semiconductor device having gate electrodes formed in trench structure before formation of source layers
10/19/1999US5970343 Fabrication of conductivity enhanced MOS-gated semiconductor devices
10/19/1999US5970342 Method of forming high capacitive-coupling ratio and high speed flash memories with a textured tunnel oxide
10/19/1999US5970341 Method for forming vertical channels in split-gate flash memory cell
10/19/1999US5970338 Method of producing an EEPROM semiconductor structure
10/19/1999US5970332 Method of manufacturing a semiconductor device with a BiCMOS circuit
10/19/1999US5970330 Method of making field effect transistor with higher mobility
10/19/1999US5970329 Method of forming power semiconductor devices having insulated gate electrodes
10/19/1999US5970328 Fabrication method of T-shaped gate electrode in semiconductor device
10/19/1999US5970327 Liquid crystal display device of an active matrix type, introducing a metallic element capable of accelerating the crystallization of the amorphous silicon film
10/19/1999US5970326 Thin film transistor films made with anodized film and reverse-anodized etching technique
10/19/1999US5970325 Thin-film switching device having chlorine-containing active region and methods of fabrication therefor
10/19/1999US5970324 Methods of making dual gated power electronic switching devices
10/19/1999US5970321 Method of fabricating a microelectronic package having polymer ESD protection
10/19/1999US5969990 Nonvolatile memory array with NAND string memory cell groups selectively connected to sub bit lines
10/19/1999US5969984 Level converting circuit for converting level of an input signal, internal potential generating circuit for generating internal potential, internal potential generating unit generating internal potential, highly reliable semiconductor device
10/19/1999US5969977 Electronic memory device having bit lines with block selector switches
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