Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/1999
11/04/1999WO1999042799A9 Electrically insulated strain gage
11/04/1999WO1999040614A3 Method of manufacturing a semiconductor device with linearly doping profile
11/04/1999WO1997049125A3 Method of manufacturing an electronic device comprising thin-film transistors
11/04/1999EP0846336A3 Method of manufacturing an electronic device comprising thin film transistors
11/04/1999DE19919955A1 Semiconductor component with high voltage strength
11/04/1999DE19820223C1 Variable doping epitaxial layer manufacturing method
11/04/1999DE19819456A1 Micromechanical component manufacturing method, e.g. for micromechanical acceleration sensor manufacture
11/04/1999DE19818299A1 Niederohmiger Hochvolt-Feldeffekttransistor Low impedance high-voltage field-effect transistor
11/03/1999EP0954039A1 Gunn diode, NRD guide gunn oscillator and fabricating method
11/03/1999EP0954031A2 Ferroelectric integrated circuit having low sensitivity to hydrogen exposure and including a hydrogen barrier layer, and method for fabricating the same
11/03/1999EP0953420A2 Mold for non-photolithographic fabrication of microstructures
11/03/1999EP0953214A1 Semiconductor having large volume fraction of intermediate range order material
11/03/1999EP0953213A2 Patterns of electrically conducting polymers and their application as electrodes or electrical contacts
11/03/1999EP0953210A1 Flip-chip type connection with elastic contacts
11/03/1999EP0840942A4 GaAs SUBSTRATE WITH COMPOSITIONALLY GRADED AlGaAsSb BUFFER FOR FABRICATION OF HIGH-INDIUM FETS
11/03/1999EP0799495A4 Silicon-germanium-carbon compositions and processes thereof
11/03/1999EP0786786B1 Capacitor with a double electrical layer
11/03/1999EP0760020B1 Device having a switch comprising a chromium layer and method for depositing chromium layers by sputtering
11/03/1999CN1234137A Method for mfg. oxide dielectric device, and memory and semiconductor device using same
11/03/1999CN1233929A Display devices
11/03/1999CN1233857A Semiconductor device and mfg. method thereof
11/02/1999US5978276 Electrically erasable nonvolatile memory
11/02/1999US5978272 Nonvolatile memory structure for programmable logic devices
11/02/1999US5978264 Nonvolatile semiconductor memory device operable at high speed with low power supply voltage while suppressing increase of chip area
11/02/1999US5978258 MOS diode for use in a non-volatile memory cell background
11/02/1999US5978253 Methods of operating integrated circuit memory devices having nonvolatile single transistor unit cells therein
11/02/1999US5978250 Ferroelectric memory devices having reconfigurable bit lines and methods of operating same
11/02/1999US5978206 Stacked-fringe integrated circuit capacitors
11/02/1999US5978058 Thin film transistor liquid crystal display with a silicide layer formed inside a contact hole and fabricating process therefor
11/02/1999US5977818 Multi-input transistor circuit and multi-input transconductance circuit
11/02/1999US5977799 Decoding circuit for a storing circuit
11/02/1999US5977641 Semiconductor device and method for manufacturing the same
11/02/1999US5977631 Semiconductor device including a semiconductor package with electromagnetic coupling slots
11/02/1999US5977612 Semiconductor devices constructed from crystallites
11/02/1999US5977611 Power diode and hybrid diode, voltage limiter and freewheeling diode having the power diode
11/02/1999US5977606 Dielectric isolated high voltage semiconductor device
11/02/1999US5977605 SiC Semiconductor device comprising a pn Junction with a voltage absorbing edge
11/02/1999US5977602 Semiconductor device having an oxygen-rich punchthrough region extending through the length of the active region
11/02/1999US5977594 Protecting circuit for a semiconductor circuit
11/02/1999US5977593 Semiconductor device and method of manufacturing the same
11/02/1999US5977592 Semiconductor device having an improved structure and capable of greatly reducing its occupied area
11/02/1999US5977591 High-voltage-resistant MOS transistor, and corresponding manufacturing process
11/02/1999US5977590 Semiconductor device having insulation gate type field effect transistor of high breakdown voltage
11/02/1999US5977588 Radio frequency power MOSFET device having improved performance characteristics
11/02/1999US5977587 Semiconductor device and a method for wiring of a semiconductor device
11/02/1999US5977586 Non-volatile integrated low-doped drain device with partially overlapping gate regions
11/02/1999US5977584 Memory devices containing dual-string NOR memory arrays therein
11/02/1999US5977580 Memory device and fabrication method thereof
11/02/1999US5977577 Ferroelectric based memory devices utilizing low curie point ferroelectrics and encapsulation
11/02/1999US5977572 Low offset voltage AlInAs/GaInAs heterostructure-confinement bipolar transistor
11/02/1999US5977570 Semiconductor device and manufacturing method thereof
11/02/1999US5977569 Bidirectional lateral insulated gate bipolar transistor having increased voltage blocking capability
11/02/1999US5977564 Semiconductor device
11/02/1999US5977561 Elevated source/drain MOSFET with solid phase diffused source/drain extension
11/02/1999US5977560 Thin film transistor constructions with polycrystalline silicon-germanium alloy doped with carbon in the channel region
11/02/1999US5977559 Thin-film transistor having a catalyst element in its active regions
11/02/1999US5976989 Thin film transistor fabrication method, active matrix substrate fabrication method, and liquid crystal display device
11/02/1999US5976962 Method of fabricating semiconductor device
11/02/1999US5976956 Method of controlling dopant concentrations using transient-enhanced diffusion prior to gate formation in a device
11/02/1999US5976946 Thin film formation method for ferroelectric materials
11/02/1999US5976942 Method of manufacturing a high-voltage semiconductor device
11/02/1999US5976940 Method of making plurality of bipolar transistors
11/02/1999US5976936 Multilyer laminate; forming trench; forming barrier electrode
11/02/1999US5976934 Method of manufacturing a nonvolatile semiconductor memory device with select gate bird's beaks
11/02/1999US5976932 Memory cell and method for producing the memory cell
11/02/1999US5976926 Static memory cell and method of manufacturing a static memory cell
11/02/1999US5976920 Single layer integrated metal process for high electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT)
11/02/1999US5976918 Method of forming insulating film with few hydrogen atom inclusions
11/02/1999US5976899 Reduced terminal testing system
11/02/1999US5976768 Masking, exposure, development
11/02/1999US5976641 Intermetallic target
11/02/1999US5976390 Micromachining method and micromachined structure
11/02/1999CA2171020C Ternary compound film and manufacturing method therefor
10/1999
10/28/1999WO1999054940A1 Composite semiconductor device
10/28/1999WO1999054939A1 VERTICAL BIPOLAR TRANSISTOR, IN PARTICULAR WITH SiGe BASE HETEROJUNCTION AND METHOD FOR MAKING SAME
10/28/1999WO1999054936A1 Polymer devices
10/28/1999WO1999054931A1 Elimination of poly cap for easy poly1 contact for nand floating gate memory
10/28/1999WO1999054925A1 Self-aligned contacts for semiconductor device
10/28/1999WO1999054923A1 A titanium nitride diffusion barrier for use in non-silicon technologies and metallization method
10/28/1999WO1999054919A2 Manufacture of field-effect semiconductor devices
10/28/1999WO1999054918A2 Manufacture of trench-gate semiconductor devices
10/28/1999WO1999054882A1 Semiconductor memory
10/28/1999WO1999040630A3 Semiconductor device with a bipolar transistor, and method of manufacturing such a device
10/28/1999WO1999039389A3 A transistor of sic
10/28/1999DE19858828A1 Kapazitiver Sensor Capacitive sensor
10/28/1999DE19847563A1 Capacitative sensor for pressure determination by deformation of a membrane causing a change in capacitance
10/28/1999DE19816449A1 Verfahren zum Herstellen eines SOI-Wafers für niederohmige Hochvolt-Halbleiterbauelemente A method for manufacturing an SOI wafer for low-high-voltage semiconductor devices
10/27/1999EP0952617A1 Gallium nitride-based III-V group compound semiconductor device and method of producing the same
10/27/1999EP0952611A2 Semiconductor device
10/27/1999EP0951740A1 Lateral dmos transistor for rf/mircrowave applications
10/27/1999EP0951739A1 High density electrical connectors
10/27/1999EP0951736A1 Bumps in grooves for elastic positioning
10/27/1999EP0951631A1 Spherical shaped semiconductor integrated circuit
10/27/1999EP0853820A4 Nonvolatile reprogrammable interconnect cell with fn tunneling and programming method thereof
10/27/1999EP0853815A4 Formation of source/drain from doped glass
10/27/1999CN1233075A Method of fabricating ferroelectric integrated circuit using dry and wet etching
10/27/1999CN1233074A Ferroelectric integrated circuit having low sensitivity to hydrogen exposure and method for fabricating same
10/26/1999US5973962 Method of programming non-volatile memory devices having a NAND type cell array
10/26/1999US5973408 Electrode structure for a semiconductor device
10/26/1999US5973384 Semiconductor device including a bipolar transistor
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