Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/1999
11/16/1999US5985703 Forming polycrystalline thin film channel region between thin film channel and source regions; transistor gate dielectric positioned adjacent to thin film channel region
11/16/1999US5985702 Methods of forming conductive polysilicon lines and bottom gated thin film transistors, and conductive polysilicon lines and thin film transistors
11/16/1999US5985701 Process for fabricating liquid crystal electro-optical device comprising complementary thin film field effect transistors
11/16/1999US5985700 On which a silicon coating is directly formed, patterningsilicon coating to form base and continuing fabrication steps
11/16/1999US5985025 Semiconductor growth method
11/11/1999WO1999057813A1 Circuit with individual electron components and method for the operation thereof
11/11/1999WO1999057767A1 Bipolar mos power transistor
11/11/1999WO1999057761A1 Method for fabricating a lateral rf mos device with a non-diffusion source-backside connection
11/11/1999WO1999057750A2 Method of manufacturing a semiconductor device
11/11/1999WO1999057727A1 Eeprom
11/11/1999WO1999057345A1 Functional element for electric, electronic or optical device and method for manufacturing the same
11/11/1999WO1999045582A9 A method for generation of electrical conducting or semiconducting structures in three dimensions and methods for erasure of the same structures
11/11/1999DE19919962A1 Insulating trench isolation for MOS-transistors in the manufacture of DRAM
11/11/1999DE19821910C1 Stacked capacitor manufacturing method
11/11/1999DE19820439A1 Method of preventing the snap-down effect in a power rectifier with a high breakdown voltage
11/11/1999CA2270662A1 Field effect transistor, control method for controlling such a field effect transistor and a frequency mixer means including such a field effect transistor
11/10/1999EP0955679A2 Stack capacitor with improved plug conductivity
11/10/1999EP0955674A2 Fabrication of hybrid polycrystalline and amorphous silicon structures
11/10/1999EP0954880A1 Silicon-germanium hetero-bipolar transistor, and method for making its various epitactiv layers
11/10/1999CN2348492Y Electrostatic induction device
11/10/1999CN1234613A P-shape channelled metal-oxide semiconductor FET transistor structure
11/10/1999CN1234612A Substrate-triggering type electrostatic discharge protective semiconductor and method thereof
11/10/1999CN1046375C Gallium nitride-based III-V group compound semiconductor device and method of producing the same
11/09/1999US5982471 Liquid crystal display contact structure having conducting spacers and plural conducting films
11/09/1999US5982469 Method of manufacturing a liquid crystal device including a peripheral circuit area and a pixel area on the same substrate
11/09/1999US5982467 Method of manufacturing liquid crystal display including active panel
11/09/1999US5982462 Inverse stagger or planar type thin-film transistor device and liquid-crystal display apparatus having floating gate electrode which is capacitively coupled with one or more input electrodes
11/09/1999US5982461 Light valve device
11/09/1999US5982460 Electro-optical display
11/09/1999US5982348 Active matrix electro-optical device
11/09/1999US5982036 Multi-layered structure for ohmic electrode fabrication
11/09/1999US5982024 High concentration doped semiconductor
11/09/1999US5982023 Semiconductor device and field effect transistor
11/09/1999US5982022 Angled implant to improve high current operation of transistors
11/09/1999US5982020 Deuterated bipolar transistor and method of manufacture thereof
11/09/1999US5982019 Semiconductor device with a diffused resistor
11/09/1999US5982016 Monolithic component associating a high-voltage component and logic components
11/09/1999US5982015 High breakdown voltage semiconductor device
11/09/1999US5982008 Semiconductor device using a shallow trench isolation
11/09/1999US5982005 Semiconductor device using an SOI substrate
11/09/1999US5982004 Polysilicon devices and a method for fabrication thereof
11/09/1999US5982003 Silicon-on-insulator transistors having improved current characteristics and reduced electrostatic discharge susceptibility
11/09/1999US5982002 Light valve having a semiconductor film and a fabrication process thereof
11/09/1999US5981999 Power trench DMOS with large active cell density
11/09/1999US5981998 Single feature size MOS technology power device
11/09/1999US5981997 Horizontal field effect transistor and method of manufacturing the same
11/09/1999US5981996 Vertical trench misfet and method of manufacturing the same
11/09/1999US5981994 Method and semiconductor circuit for maintaining integrity of field threshold voltage requirements
11/09/1999US5981993 Flash memory device and method of fabricating the same
11/09/1999US5981990 Semiconductor memory device, method of manufacturing the same and method of using the same
11/09/1999US5981989 Semiconductor memory device having improved stacked capacitor cells
11/09/1999US5981986 Semiconductor device having a heterojunction
11/09/1999US5981985 Heterojunction bipolar transistor with buried selective sub-collector layer, and methods of manufacture
11/09/1999US5981984 Insulated gate thyristor
11/09/1999US5981983 High voltage semiconductor device
11/09/1999US5981982 Dual gated power electronic switching devices
11/09/1999US5981981 Semiconductor device including a bipolar structure
11/09/1999US5981980 Semiconductor laminating structure
11/09/1999US5981973 Thin film transistor structure having increased on-current
11/09/1999US5981972 Actived matrix substrate having a transistor with multi-layered ohmic contact
11/09/1999US5981970 Thin-film field-effect transistor with organic semiconductor requiring low operating voltages
11/09/1999US5981969 Multiple peak resonant tunneling diode
11/09/1999US5981404 Multilayer ONO structure
11/09/1999US5981403 Layered silicon nitride deposition process
11/09/1999US5981389 Sputter depositing chromium layers in presence of neon gas and the working gas pressure during sputtering is less than 1 pa.
11/09/1999US5981383 Method of fabricating a salicide layer of a device electrode
11/09/1999US5981381 Method of manufacturing a semiconductor memory device
11/09/1999US5981380 Method of forming a local interconnect including selectively etched conductive layers and recess formation
11/09/1999US5981372 Method for manufacturing a semiconductor device
11/09/1999US5981368 Enhanced shallow junction design by polysilicon line width reduction using oxidation with integrated spacer formation
11/09/1999US5981367 Method for making an access transistor
11/09/1999US5981366 Forming a tunnel oxide layer used for writing information on a silicon substrate, forming polysilicon layer on oxide, forming tungsten silicide layer over polysilicon using tungsten fluoride and silane dichloride gas, patterning
11/09/1999US5981364 Method of forming a silicon gate to produce silicon devices with improved performance
11/09/1999US5981363 Method and apparatus for high performance transistor devices
11/09/1999US5981349 Method of forming semiconducting planar junction termination with high breakdown voltage and low parasitic capacitance
11/09/1999US5981348 Method for the manufacture of the extrinsic base of an NPN transistor in a high-frequency bipolar technology
11/09/1999US5981346 Process for forming physical gate length dependent implanted regions using dual polysilicon spacers
11/09/1999US5981345 Si/SiGe MOSFET and method for fabricating the same
11/09/1999US5981344 Trench field effect transistor with reduced punch-through susceptibility and low RDSon
11/09/1999US5981343 Single feature size mos technology power device
11/09/1999US5981342 Method of making a semiconductor component with compensation implantation
11/09/1999US5981339 Narrower erase distribution for flash memory by smaller poly grain size
11/09/1999US5981335 Method of making stacked gate memory cell structure
11/09/1999US5981319 The feature in the second level is made to be larger than the first formed feature, thereby producing a structure that is larger at the top than at the base, i. e. t-shaped structure
11/09/1999US5981318 Fully-dielectric-isolated FET technology
11/09/1999US5981317 Method of fabricating a thin film transistor
11/09/1999US5981315 Transfer molding
11/09/1999US5981148 Method for forming sidewall spacers using frequency doubling hybrid resist and device formed thereby
11/09/1999US5980763 Electronic device manufacture
11/09/1999US5980762 Method of micromachining a semiconductor
11/09/1999US5980265 Low resistance, stable ohmic contacts to silicon carbide, and method of making the same
11/09/1999CA2185532C Electrode structure and method for anodically-bonded capacitive sensors
11/04/1999WO1999056323A1 Semiconductor device and process for manufacturing the same
11/04/1999WO1999056322A1 Low impedance, high voltage field effect transistor
11/04/1999WO1999056321A1 Lateral high-voltage sidewall transistor
11/04/1999WO1999056320A1 Bidirectional silicon carbide power devices having voltage supporting regions therein for providing improved blocking voltage capability
11/04/1999WO1999056319A1 High voltage flange for semiconductor component
11/04/1999WO1999056314A1 Method of forming side dielectrically isolated semiconductor devices and mos semiconductor devices fabricated by this method
11/04/1999WO1999056311A1 Mos transistor with shield coplanar with gate electrode
11/04/1999WO1999044241A3 Semiconductor device comprising a mos transistor
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