Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/1999
11/23/1999US5990508 Ferroelectric memory
11/23/1999US5990504 Finger structured MOSFET
11/23/1999US5990503 Selectable resolution CCD sensor
11/23/1999US5990501 Multichip press-contact type semiconductor device
11/23/1999US5990492 Self-aligned thin-film transistor for a liquid crystal display having source and drain electrodes of different material
11/23/1999US5990491 Active matrix device utilizing light shielding means for thin film transistors
11/23/1999US5990489 Thin film semiconductor apparatus and production method thereof
11/23/1999US5989996 Method for manufacturing semiconductor device
11/23/1999US5989988 Semiconductor device and method of manufacturing the same
11/23/1999US5989968 Method of making bipolar transistor having reduced resistance
11/23/1999US5989967 Transistor with ultra short length defined partially by sidewall oxidation of a gate conductor overlying the channel length
11/23/1999US5989965 Nitride overhang structures for the silicidation of transistor electrodes with shallow junction
11/23/1999US5989963 Doping beneath the surface of substrate; forming retrograde channel profile by annealing in an inert gas to prevent an oxide capping layer from forming on surface; doping; heating in inert gas under vacuum; conventional dopants
11/23/1999US5989961 Fabrication method of a vertical channel transistor
11/23/1999US5989960 Semiconductor device and method for fabricating the same
11/23/1999US5989959 Silicon nitride and silicon oxide films are deposited in that order on a metal silicide film; in a single session of lithography, the gate electrode of a transistor constituting a peripheral circuit are formed; use in flash memory
11/23/1999US5989958 Flash memory with microcrystalline silicon carbide film floating gate
11/23/1999US5989955 Method of forming stacked and trench type DRAM capacitor
11/23/1999US5989951 Semiconductor device with contacts formed in self-alignment
11/23/1999US5989947 Method for the manufacture of quantum structures, in particular quantum dots and tunnel barriers as well as components with such quantum structures
11/23/1999US5989945 One thin film in the thin film monolithic structure is formed of a coating film (excluding a spin-on-glass comprising siloxane bonds) such as polysilazanes, obtained by applying the solution and annealing; cost efficiency
11/23/1999US5989938 Thin oxynitride layer which defines a recess in a patterned metal layer, spin-on-glass(sog) fills recess and surface of oxynitride layer, removing sog from surface; adding second oxynitride layer and nitride layer; crack resistance
11/23/1999US5989927 Producing the ferroelectric layer by spin coating an organic solvent solution containing bismuth source and titanium source in mole ratio 4 to 3, respectively and heat treating to dry and crystallize the bismuth titanate film
11/23/1999US5987989 Semiconductor physical quantity sensor
11/23/1999US5987988 Acceleration sensor and method for manufacturing thereof
11/23/1999US5987921 Method for making a semiconductor acceleration sensor
11/18/1999WO1999059209A1 Gate turn-off thyristor
11/18/1999WO1999059208A1 High-voltage semiconductor component, method for the production and use thereof
11/18/1999WO1999058985A1 Method for producing micromechanical components
11/18/1999WO1999050911A3 Electronic devices comprising thin-film transistors
11/18/1999DE19921863A1 Semiconductor sensor for measurement of dynamically varying accelerations
11/18/1999DE19853432A1 Halbleiteranordnung und Verfahren zum Herstellen derselben A semiconductor device and method of manufacturing the same
11/18/1999DE19840984A1 Semiconductor element for integrated circuits
11/18/1999DE19840032C1 Semiconductor device for compensation element
11/18/1999DE19821999A1 Silicon-On-Isolator semiconductor arrangement
11/18/1999DE19820956A1 Insulated gate bipolar transistor with lateral component for retaining electric field strength
11/18/1999DE19820734A1 Metal-semiconductor diode with outer metal layer
11/17/1999EP0957516A1 Method for manufacturing oxide dielectric device, and memory and semiconductor device usign the device
11/17/1999EP0956598A1 Hemt double hetero structure
11/17/1999EP0956597A1 Semiconductor diodes having low forward conduction voltage drop and low reverse current leakage
11/17/1999EP0956596A1 Vertical power mosfet having reduced sensitivity to variations in thickness of epitaxial layer
11/17/1999EP0956595A1 Platinum-free ferroelectric memory cell with intermetallic barrier layer and method of making same
11/17/1999EP0956594A1 High resistivity silicon carbide substrates for high power microwave devices
11/17/1999EP0956592A1 Highly-integrated semiconductor memory and process for preparation of the memory
11/17/1999EP0956586A1 Method in the manufacturing of a semiconductor device
11/17/1999EP0956585A1 Method for formation of thin film transistors on plastic substrates
11/17/1999EP0956493A1 Pressure sensor component with tubing connection
11/17/1999EP0860028A4 Varactor with electrostatic barrier
11/17/1999EP0836653A4 Adhering metal to glass
11/17/1999CN2349673Y Stick chip type diode
11/17/1999CN1235380A Structure and manufacture of small power thysistor
11/17/1999CN1235379A Field effect transistors, control method for controlling such field effect transistor and frequency mixer means including such field effect transistor
11/17/1999CN1235377A Semiconductor memory device and method of manufacturing the same
11/17/1999CN1235368A Stack capacitors with improved plug conductivity
11/16/1999US5986939 Non-volatile semiconductor memory device
11/16/1999US5986933 Semiconductor memory device having variable number of selected cell pages and subcell arrays
11/16/1999US5986876 Double-layer capacitor
11/16/1999US5986723 Liquid crystal display with TFT channel at gate source crossing and capacitor dividing pixel
11/16/1999US5986464 Threshold logic circuit with low space requirement
11/16/1999US5986327 Bipolar type diode
11/16/1999US5986326 Semiconductor device with microwave bipolar transistor
11/16/1999US5986325 Microwave integrated circuit device
11/16/1999US5986324 Heterojunction bipolar transistor
11/16/1999US5986323 High-frequency bipolar transistor structure
11/16/1999US5986315 Guard wall to reduce delamination effects within a semiconductor die
11/16/1999US5986314 Depletion mode MOS capacitor with patterned Vt implants
11/16/1999US5986313 Semiconductor device comprising MISFETS and method of manufacturing the same
11/16/1999US5986312 Field effect semiconductor device having improved connections
11/16/1999US5986311 Semiconductor device having recrystallized source/drain regions
11/16/1999US5986308 MOS transistor with a protection diode
11/16/1999US5986306 Thin film transistor having a heat sink that exhibits a high degree of heat dissipation effect
11/16/1999US5986305 Semiconductor device with an inverse-T gate lightly-doped drain structure
11/16/1999US5986304 Punch-through prevention in trenched DMOS with poly-silicon layer covering trench corners
11/16/1999US5986303 Flash memory device and method for manufacturing the same
11/16/1999US5986302 Semiconductor memory device
11/16/1999US5986296 CCD type semiconductor device
11/16/1999US5986295 Charge coupled device
11/16/1999US5986291 Field effect devices
11/16/1999US5986290 Silicon controlled rectifier with reduced substrate current
11/16/1999US5986289 Surface breakdown bidirectional breakover protection component
11/16/1999US5986287 Semiconductor structure for a transistor
11/16/1999US5986286 Semiconductor device and a method of manufacturing the same
11/16/1999US5986285 Group III-V amorphous and microcrystalline optical semiconductor including hydrogen, and method of forming thereof
11/16/1999US5986284 Semiconductor device
11/16/1999US5985862 Treating undesired smooth muscle contractions and inflammatory diseases
11/16/1999US5985741 Controlling crystallization by using a metal containing crystallization promoter to at least one portion of semiconductor layer
11/16/1999US5985740 Crystallizing amorphous semiconductor film by first heat treatment and reducing catalyst existing in film by a second heat treatment within an oxidizing atmosphere containing a halogen
11/16/1999US5985733 Semiconductor device having a T-shaped field oxide layer and a method for fabricating the same
11/16/1999US5985727 Method for forming MOS devices with retrograde pocket regions and counter dopant regions buried in the substrate surface
11/16/1999US5985726 Damascene process for forming ultra-shallow source/drain extensions and pocket in ULSI MOSFET
11/16/1999US5985724 Method for forming asymmetrical p-channel transistor having nitrided oxide patterned to selectively form a sidewall spacer
11/16/1999US5985722 Method of fabricating electrostatic discharge device
11/16/1999US5985721 Single feature size MOS technology power device
11/16/1999US5985720 Method of making non-volatile semiconductor memory device with the floating gate having upper and lower impurity concentrations
11/16/1999US5985719 Method of forming a programmable non-volatile memory cell
11/16/1999US5985717 Method of fabricating a semiconductor device
11/16/1999US5985716 Method for manufacturing a semiconductor device
11/16/1999US5985712 Method of fabricating field effect transistor with an LDD structure
11/16/1999US5985708 Method of manufacturing vertical power device
11/16/1999US5985705 Low threshold voltage MOS transistor and method of manufacture
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