Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/1999
11/30/1999US5994760 Device having a low threshold voltage for protection against electrostatic discharges
11/30/1999US5994754 Semiconductor device
11/30/1999US5994753 Semiconductor device and method for fabricating the same
11/30/1999US5994752 Field-effect-controllable semiconductor component with a plurality of temperature sensors
11/30/1999US5994749 Semiconductor device having a gate electrode film containing nitrogen
11/30/1999US5994747 MOSFETs with recessed self-aligned silicide gradual S/D junction
11/30/1999US5994739 Integrated circuit device
11/30/1999US5994738 Silicon oxide insulator (SOI) semiconductor having selectively linked body
11/30/1999US5994736 Semiconductor device having buried gate electrode with silicide layer and manufacture method thereof
11/30/1999US5994735 Semiconductor device having a vertical surround gate metal-oxide semiconductor field effect transistor, and manufacturing method thereof
11/30/1999US5994734 Modified gate structure for non-volatile memory and its method of fabricating the same
11/30/1999US5994733 Nonvolatile semiconductor memory device and method of fabricating the same
11/30/1999US5994732 Nonvolatile semiconductor memory device
11/30/1999US5994731 Semiconductor device and fabrication method thereof
11/30/1999US5994728 Field effect transistor and method for producing the same
11/30/1999US5994727 High performance gaas field effect transistor structure
11/30/1999US5994725 MOSFET having Schottky gate and bipolar device
11/30/1999US5994721 High aperture LCD with insulating color filters overlapping bus lines on active substrate
11/30/1999US5994717 Thin-film transistor and method for fabricating same and liquid crystal display device
11/30/1999US5994714 Quantum diffraction transistor
11/30/1999US5994234 Multilayer film of polysilicon on semiconductor substrate
11/30/1999US5994202 Threshold voltage tailoring of the corner of a MOSFET device
11/30/1999US5994196 Methods of forming bipolar junction transistors using simultaneous base and emitter diffusion techniques
11/30/1999US5994194 Controlling spacings between ohmic metal and emitters on integraterd circuit
11/30/1999US5994192 Compensation of the channel region critical dimension, after polycide gate, lightly doped source and drain oxidation procedure
11/30/1999US5994191 Elevated source/drain salicide CMOS technology
11/30/1999US5994189 High withstand voltage semiconductor device and manufacturing method thereof
11/30/1999US5994187 N-type junctions
11/30/1999US5994185 Method of fabricating flash memory cell
11/30/1999US5994184 Semiconductor memory device and method of manufacturing the same
11/30/1999US5994179 Method of fabricating a MOSFET featuring an effective suppression of reverse short-channel effect
11/30/1999US5994174 Method of fabrication of display pixels driven by silicon thin film transistors
11/30/1999US5994171 Method of making lateral components in power semiconductor devices
11/30/1999US5994170 Silicon segment programming method
11/30/1999US5994158 Controlling gas flow
11/30/1999US5994153 Fabrication process of a capacitor structure of semiconductor memory cell
11/30/1999US5993893 Evaluation method for polycrystalline silicon film
11/30/1999CA2130505C Thin-film absolute pressure sensors and methods of manufacturing the same
11/25/1999WO1999060631A1 Nrom cell with improved programming, erasing and cycling
11/25/1999WO1999060628A1 Power mos transistor with overtemperature protection circuit
11/25/1999WO1999060165A1 Chemically assembled nano-scale devices
11/25/1999WO1999046821A3 Semiconductor switch devices and their manufacture
11/25/1999WO1999045594B1 Field effect semiconductor device having dipole barrier
11/25/1999WO1998012749A3 Emitter-switched thyristor
11/25/1999DE19922802A1 Vertical double diffused MOSFET
11/25/1999DE19921110A1 Semiconductor device, especially highly integrated semiconductor chip, production process
11/25/1999DE19910814A1 Planar low voltage power MOSFET for e.g. laptop computer
11/25/1999DE19846212C1 Semiconductor element used as MOSFET or bipolar transistor
11/25/1999DE19823170A1 Bipolar transistor with insulated gate electrode
11/25/1999DE19821834A1 Power MOS transistor (PMT) with integral overheat protection
11/24/1999EP0959563A2 Semiconductor device, drive method, and drive apparatus
11/24/1999EP0959504A2 Solid state imager including TFTS with variably doped contact layer system for reducing leakage current and increasing mobility
11/24/1999EP0959503A1 Field effect transistor, control method for controlling such a field affect transistor and a frequency mixer means including such a field effect transistor
11/24/1999EP0959497A1 A method of forming an ultra-thin soi electrostatic discharge protection device
11/24/1999EP0959151A2 Thin film forming apparatus
11/24/1999EP0958613A2 Semiconductor component for high voltage
11/24/1999EP0958612A2 Semiconductor component with linear current-to-voltage characteristics
11/24/1999EP0958611A1 High density trenched dmos transistor
11/24/1999EP0958610A1 A BIPOLAR SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR LAYERS OF SiC AND A METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE OF SiC
11/24/1999EP0958609A2 A FIELD CONTROLLED SEMICONDUCTOR DEVICE OF SiC AND A METHOD FOR PRODUCTION THEREOF
11/24/1999EP0958602A1 Method for producing a transistor with self-aligned contacts and field insulation
11/24/1999EP0958601A1 A method for producing a channel region layer in a voltage controlled semiconductor device
11/24/1999EP0958598A1 Oxidized oxygen-doped amorphous silicon ultrathin gate oxide structures
11/24/1999EP0958596A1 Screening oxide for source and drain regions formed from solid dopant source
11/24/1999EP0896734A4 All-metal, giant magnetoresistive, solid-state component
11/24/1999CN1236485A Semiconductor integrated circuit device and its manufacture
11/24/1999CN1236190A Gunn diode, non-radiation medium wave guide gunn oscillator and its producing method and mounting structure thereof
11/24/1999CN1236189A Semiconductor device having bent gate electrode and process for production thereof
11/24/1999CN1236186A Process for producing semiconductor integrated circuit device and semiconductor integrated circuit device
11/24/1999CN1236183A Semiconductor element, and its driving method and driving device
11/24/1999CN1046823C Method for manufacturing MOS transistor with low dosed drain and upside-down T shape grid and its structure
11/23/1999US5991517 Flash EEprom system with cell by cell programming verification
11/23/1999US5991205 Method of erasing data in nonvolatile semiconductor memory devices
11/23/1999US5991204 Flash eeprom device employing polysilicon sidewall spacer as an erase gate
11/23/1999US5991203 Circuit and method of erasing a nonvolatile semiconductor memory
11/23/1999US5991182 Active rectifier having minimal energy losses
11/23/1999US5990987 Transverse electrical field LCD with islands having a pattern the same as the combined pattern of gate electrodes, gate bus lines and counter electrodes
11/23/1999US5990953 Solid state imaging device having overflow drain region provided in parallel to CCD shift register
11/23/1999US5990555 Electronic circuit device with multi-layer wiring
11/23/1999US5990549 Thermal bus bar design for an electronic cartridge
11/23/1999US5990542 Semiconductor device
11/23/1999US5990539 Transistor component having an integrated emitter resistor
11/23/1999US5990538 High resistivity integrated circuit resistor
11/23/1999US5990535 Power integrated circuit
11/23/1999US5990534 Diode
11/23/1999US5990533 Semiconductor device including a magnetoresistance effect element functioning as a current detector
11/23/1999US5990532 Semiconductor arrangement with lightly doped regions under a gate structure
11/23/1999US5990531 Methods of making high voltage GaN-AlN based semiconductor devices and semiconductor devices made
11/23/1999US5990530 Raised semiconductor MOS transistor with improved transistor characteristics
11/23/1999US5990522 Field effect transistor with improved source/drain diffusion regions having an extremely small capacitance
11/23/1999US5990521 Semiconductor device and method of producing the same
11/23/1999US5990520 Method for fabricating a high performance vertical bipolar NPN or PNP transistor having low base resistance in a standard CMOS process
11/23/1999US5990518 MOS device
11/23/1999US5990517 Semiconductor memory device containing nitrogen in a gate oxide film
11/23/1999US5990516 MOSFET with a thin gate insulating film
11/23/1999US5990515 Trenched gate non-volatile semiconductor device and method with corner doping and sidewall doping
11/23/1999US5990514 Nonvolatile semiconductor memory having boosting lines self-aligned with word lines
11/23/1999US5990513 Yield enhancement technique for integrated circuit processing to reduce effects of undesired dielectric moisture retention and subsequent hydrogen out-diffusion
11/23/1999US5990512 Hole impact ionization mechanism of hot electron injection and four-terminal ρFET semiconductor structure for long-term learning
11/23/1999US5990509 2F-square memory cell for gigabit memory applications