Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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11/30/1999 | US5994760 Device having a low threshold voltage for protection against electrostatic discharges |
11/30/1999 | US5994754 Semiconductor device |
11/30/1999 | US5994753 Semiconductor device and method for fabricating the same |
11/30/1999 | US5994752 Field-effect-controllable semiconductor component with a plurality of temperature sensors |
11/30/1999 | US5994749 Semiconductor device having a gate electrode film containing nitrogen |
11/30/1999 | US5994747 MOSFETs with recessed self-aligned silicide gradual S/D junction |
11/30/1999 | US5994739 Integrated circuit device |
11/30/1999 | US5994738 Silicon oxide insulator (SOI) semiconductor having selectively linked body |
11/30/1999 | US5994736 Semiconductor device having buried gate electrode with silicide layer and manufacture method thereof |
11/30/1999 | US5994735 Semiconductor device having a vertical surround gate metal-oxide semiconductor field effect transistor, and manufacturing method thereof |
11/30/1999 | US5994734 Modified gate structure for non-volatile memory and its method of fabricating the same |
11/30/1999 | US5994733 Nonvolatile semiconductor memory device and method of fabricating the same |
11/30/1999 | US5994732 Nonvolatile semiconductor memory device |
11/30/1999 | US5994731 Semiconductor device and fabrication method thereof |
11/30/1999 | US5994728 Field effect transistor and method for producing the same |
11/30/1999 | US5994727 High performance gaas field effect transistor structure |
11/30/1999 | US5994725 MOSFET having Schottky gate and bipolar device |
11/30/1999 | US5994721 High aperture LCD with insulating color filters overlapping bus lines on active substrate |
11/30/1999 | US5994717 Thin-film transistor and method for fabricating same and liquid crystal display device |
11/30/1999 | US5994714 Quantum diffraction transistor |
11/30/1999 | US5994234 Multilayer film of polysilicon on semiconductor substrate |
11/30/1999 | US5994202 Threshold voltage tailoring of the corner of a MOSFET device |
11/30/1999 | US5994196 Methods of forming bipolar junction transistors using simultaneous base and emitter diffusion techniques |
11/30/1999 | US5994194 Controlling spacings between ohmic metal and emitters on integraterd circuit |
11/30/1999 | US5994192 Compensation of the channel region critical dimension, after polycide gate, lightly doped source and drain oxidation procedure |
11/30/1999 | US5994191 Elevated source/drain salicide CMOS technology |
11/30/1999 | US5994189 High withstand voltage semiconductor device and manufacturing method thereof |
11/30/1999 | US5994187 N-type junctions |
11/30/1999 | US5994185 Method of fabricating flash memory cell |
11/30/1999 | US5994184 Semiconductor memory device and method of manufacturing the same |
11/30/1999 | US5994179 Method of fabricating a MOSFET featuring an effective suppression of reverse short-channel effect |
11/30/1999 | US5994174 Method of fabrication of display pixels driven by silicon thin film transistors |
11/30/1999 | US5994171 Method of making lateral components in power semiconductor devices |
11/30/1999 | US5994170 Silicon segment programming method |
11/30/1999 | US5994158 Controlling gas flow |
11/30/1999 | US5994153 Fabrication process of a capacitor structure of semiconductor memory cell |
11/30/1999 | US5993893 Evaluation method for polycrystalline silicon film |
11/30/1999 | CA2130505C Thin-film absolute pressure sensors and methods of manufacturing the same |
11/25/1999 | WO1999060631A1 Nrom cell with improved programming, erasing and cycling |
11/25/1999 | WO1999060628A1 Power mos transistor with overtemperature protection circuit |
11/25/1999 | WO1999060165A1 Chemically assembled nano-scale devices |
11/25/1999 | WO1999046821A3 Semiconductor switch devices and their manufacture |
11/25/1999 | WO1999045594B1 Field effect semiconductor device having dipole barrier |
11/25/1999 | WO1998012749A3 Emitter-switched thyristor |
11/25/1999 | DE19922802A1 Vertical double diffused MOSFET |
11/25/1999 | DE19921110A1 Semiconductor device, especially highly integrated semiconductor chip, production process |
11/25/1999 | DE19910814A1 Planar low voltage power MOSFET for e.g. laptop computer |
11/25/1999 | DE19846212C1 Semiconductor element used as MOSFET or bipolar transistor |
11/25/1999 | DE19823170A1 Bipolar transistor with insulated gate electrode |
11/25/1999 | DE19821834A1 Power MOS transistor (PMT) with integral overheat protection |
11/24/1999 | EP0959563A2 Semiconductor device, drive method, and drive apparatus |
11/24/1999 | EP0959504A2 Solid state imager including TFTS with variably doped contact layer system for reducing leakage current and increasing mobility |
11/24/1999 | EP0959503A1 Field effect transistor, control method for controlling such a field affect transistor and a frequency mixer means including such a field effect transistor |
11/24/1999 | EP0959497A1 A method of forming an ultra-thin soi electrostatic discharge protection device |
11/24/1999 | EP0959151A2 Thin film forming apparatus |
11/24/1999 | EP0958613A2 Semiconductor component for high voltage |
11/24/1999 | EP0958612A2 Semiconductor component with linear current-to-voltage characteristics |
11/24/1999 | EP0958611A1 High density trenched dmos transistor |
11/24/1999 | EP0958610A1 A BIPOLAR SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR LAYERS OF SiC AND A METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE OF SiC |
11/24/1999 | EP0958609A2 A FIELD CONTROLLED SEMICONDUCTOR DEVICE OF SiC AND A METHOD FOR PRODUCTION THEREOF |
11/24/1999 | EP0958602A1 Method for producing a transistor with self-aligned contacts and field insulation |
11/24/1999 | EP0958601A1 A method for producing a channel region layer in a voltage controlled semiconductor device |
11/24/1999 | EP0958598A1 Oxidized oxygen-doped amorphous silicon ultrathin gate oxide structures |
11/24/1999 | EP0958596A1 Screening oxide for source and drain regions formed from solid dopant source |
11/24/1999 | EP0896734A4 All-metal, giant magnetoresistive, solid-state component |
11/24/1999 | CN1236485A Semiconductor integrated circuit device and its manufacture |
11/24/1999 | CN1236190A Gunn diode, non-radiation medium wave guide gunn oscillator and its producing method and mounting structure thereof |
11/24/1999 | CN1236189A Semiconductor device having bent gate electrode and process for production thereof |
11/24/1999 | CN1236186A Process for producing semiconductor integrated circuit device and semiconductor integrated circuit device |
11/24/1999 | CN1236183A Semiconductor element, and its driving method and driving device |
11/24/1999 | CN1046823C Method for manufacturing MOS transistor with low dosed drain and upside-down T shape grid and its structure |
11/23/1999 | US5991517 Flash EEprom system with cell by cell programming verification |
11/23/1999 | US5991205 Method of erasing data in nonvolatile semiconductor memory devices |
11/23/1999 | US5991204 Flash eeprom device employing polysilicon sidewall spacer as an erase gate |
11/23/1999 | US5991203 Circuit and method of erasing a nonvolatile semiconductor memory |
11/23/1999 | US5991182 Active rectifier having minimal energy losses |
11/23/1999 | US5990987 Transverse electrical field LCD with islands having a pattern the same as the combined pattern of gate electrodes, gate bus lines and counter electrodes |
11/23/1999 | US5990953 Solid state imaging device having overflow drain region provided in parallel to CCD shift register |
11/23/1999 | US5990555 Electronic circuit device with multi-layer wiring |
11/23/1999 | US5990549 Thermal bus bar design for an electronic cartridge |
11/23/1999 | US5990542 Semiconductor device |
11/23/1999 | US5990539 Transistor component having an integrated emitter resistor |
11/23/1999 | US5990538 High resistivity integrated circuit resistor |
11/23/1999 | US5990535 Power integrated circuit |
11/23/1999 | US5990534 Diode |
11/23/1999 | US5990533 Semiconductor device including a magnetoresistance effect element functioning as a current detector |
11/23/1999 | US5990532 Semiconductor arrangement with lightly doped regions under a gate structure |
11/23/1999 | US5990531 Methods of making high voltage GaN-AlN based semiconductor devices and semiconductor devices made |
11/23/1999 | US5990530 Raised semiconductor MOS transistor with improved transistor characteristics |
11/23/1999 | US5990522 Field effect transistor with improved source/drain diffusion regions having an extremely small capacitance |
11/23/1999 | US5990521 Semiconductor device and method of producing the same |
11/23/1999 | US5990520 Method for fabricating a high performance vertical bipolar NPN or PNP transistor having low base resistance in a standard CMOS process |
11/23/1999 | US5990518 MOS device |
11/23/1999 | US5990517 Semiconductor memory device containing nitrogen in a gate oxide film |
11/23/1999 | US5990516 MOSFET with a thin gate insulating film |
11/23/1999 | US5990515 Trenched gate non-volatile semiconductor device and method with corner doping and sidewall doping |
11/23/1999 | US5990514 Nonvolatile semiconductor memory having boosting lines self-aligned with word lines |
11/23/1999 | US5990513 Yield enhancement technique for integrated circuit processing to reduce effects of undesired dielectric moisture retention and subsequent hydrogen out-diffusion |
11/23/1999 | US5990512 Hole impact ionization mechanism of hot electron injection and four-terminal ρFET semiconductor structure for long-term learning |
11/23/1999 | US5990509 2F-square memory cell for gigabit memory applications |